MAC15M, N Datasheet by Littelfuse Inc.

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© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 3 1Publication Order Number:
MAC15M/D
MAC15M, MAC15N
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave AC control applications
where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 Volts
On-State Current Rating of 15 Amperes RMS at 80°C
Uniform Gate Trigger Currents in Three Modes
High Immunity to dv/dt − 250 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO−220 Package
High Commutating di/dt − 9.0 A/ms minimum at 125°C
Operational in Three Quadrants, Q1, Q2, and Q3
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(−40 to 125°C, Sine Wave, 50 to 60 Hz,
Gate Open) MAC15M
MAC15N
VDRM,
VRRM 600
800
V
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT(RMS) 15 A
Peak Non-repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125°C)
ITSM 150 A
Circuit Fusing Consideration (t = 8.3 ms) I2t 93 A2s
Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C) PGM 20 W
Average Gate Power
(t = 8.3 ms, TC = 80°C) PG(AV) 0.5 W
Operating Junction Temperature Range TJ40 to +125 °C
Storage Temperature Range Tstg 40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
15 AMPERES RMS
600 thru 800 VOLTS
TO−220
CASE 221A
STYLE 4
1
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MAC15xG
AYWW
MARKING
DIAGRAM
x = M or N
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
23
Device Package Shipping
ORDERING INFORMATION
MAC15MG TO−220
(Pb−Free)
50 Units / Rail
MAC15NG TO−220
(Pb−Free)
50 Units / Rail
MT1
G
MT2
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4Main Terminal 2
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case
Thermal ResistanceJunction−to−Ambient RqJC
RqJA
2.0
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = 125°C
IDRM,
IRRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ±21 A Peak)
VTM 1.2 1.6
V
Gate Trigger Current (Continuous DC) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT 5.0
5.0
5.0
13
16
18
35
35
35
mA
Hold Current
(VD = 12 Vdc, Gate Open, Initiating Current = ±150 mA)
IH 20 40
mA
Latching Current (VD = 24 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
33
36
33
50
80
50
mA
Gate Trigger Voltage (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT 0.5
0.5
0.5
0.75
0.72
0.82
1.5
1.5
1.5
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current; See Figure 10.
(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/ms, CL = 10 mF
Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) LL = 40 mH
(di/dt)c9.0 − A/ms
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt 250 − V/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
MAC15M, MAC15N
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3
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 − VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(−) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(−) MT2
REF
MT1
(−) IGT
GATE
(−) MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT + IGT
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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4
IT(RMS), RMS ON‐STATE CURRENT (AMP)
125
120
115
110
105
100
95
90
85
80 1614121086420
TC, CASE TEMPERATURE ( C)°
IT(RMS), ON‐STATE CURRENT (AMP)
1614121086420
20
18
16
14
12
10
8
6
4
2
PAV, AVERAGE POWER (WATTS)
0
DC
α = 30 and 60°
α = 90°
α = 120°α = 180°
DC 180°
120°
90°
60°
α = 30°
VT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
100
0
IT, INSTANTANEOUS ON‐STATE CURRENT (AMP)
0.5 1 1.5 2 2.5 3 3.5 4
10
1
0.1
MAXIMUM @ TJ = 125°C
TYPICAL AT
TJ = 25°C
MAXIMUM @ TJ = 25°C
t, TIME (ms)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1
0.1
0.01 1·10
4
10001001010.1
TJ, JUNCTION TEMPERATURE (°C)
-40
IH, HOLD CURRENT (mA)
40
5-10 20 50 80 110 125
MT2 POSITIVE
MT2 NEGATIVE
Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
Figure 5. Hold Current Variation
:3 3H
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5
TJ, JUNCTION TEMPERATURE (°C)TJ, JUNCTION TEMPERATURE (°C)
IGT, GATE TRIGGER CURRENT (mA)
VGT, GATE TRIGGER VOLTAGE (VOLT)
-40 -10 20 50 80 110 125
100
1
Q3
Q1
Q2
OFF‐STATE VOLTAGE = 12 V
RL = 140 W
1
0.5
-40 -10 +20 50 80 110 125
Q1
Q2
Q3
OFF‐STATE VOLTAGE = 12 V
RL = 140 W
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
5000
4K
3K
2K
1K
010000100010010
dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
(V/ s)μ
VD = 800 Vpk
TJ = 125°C
ITM
tw
VDRM
(di/dt)c = 6f ITM
1000
f = 1
2 tw
TJ = 125°C100°C75°C
10 100
100
10
1
(dv/dt) , CRITICAL RATE OF RISE OF (V/ s)μ
cCOMMUTATING VOLTAGE
20 30 40 50 60 70 80 90
Figure 6. Typical Holding Current versus Junction
Temperature Figure 7. Gate Trigger Voltage versus Junction
Temperature
Figure 8. Critical Rate of Rise of Off−State Voltage
(Exponential) Figure 9. Critical Rate of Rise of
Commutating Voltage
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
LL1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE TRIGGER
NON‐POLAR
CL
51 W
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
3 mMENsmN z DEFWES A zons WHERE ALL BODY AND LEAD mnsauumngs ARE ALLOWED mcnzs mmumns mm mu m MW MAX A u m n szn u w 1575 a u m n as gas Ins: c a mm a mu m u: n a Ms n ma n54 n95 r u w: n m 351 on! a u was a ms u; 255 N a nu n m m o w J a an u an me nm A usnn use: mu 1027 |. a Ms a new H5 ‘52 u u an n m m 5:: a a mm a un 15A in! a u m a un 1m m s a Ms E n55 us my 1 a 235 n 255 597 507 u a nun n nan mm m v mus , H5 1 , mu 2m owns «he fights tn a num
MAC15M, MAC15N
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6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
P
UBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MAC15M/D
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