B(V)SS84L Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 1997
December, 2020 Rev. 13
1Publication Order Number:
BSS84LT1/D
MOSFET - Power,
Single P-Channel, SOT-23
-50 V, 10 W
BSS84L, BVSS84L,
SBSS84L
SOT23 Surface Mount Package Saves Board Space
BV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
DraintoSource Voltage VDSS 50 Vdc
GatetoSource Voltage Continuous VGS ±20 Vdc
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp 10 ms)
ID
IDM
130
520
mA
Total Power Dissipation @ TA = 25°C PD225 mW
Operating and Storage Temperature
Range
TJ, Tstg 55 to
150
°C
Thermal Resistance JunctiontoAmbient RqJA 556 °C/W
Thermal Resistance JunctiontoAmbient
(Note 1)
RqJA 377.2 °C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. RqJA is the sum of the junctiontocase and casetoambient thermal
resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. And the RqJA is determined by the user’s
board design. The maximum rating presented here is based on mounting the
part on JEDEC Standard 513/517.
3
1
2
PChannel
SOT23
CASE 318
STYLE 21
PD MG
G
MARKING DIAGRAM & PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
Device Package Shipping
ORDERING INFORMATION
BSS84LT1G,
BVSS84LT1G,
SBSS84LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BSS84LT7G SOT23
(PbFree)
3,500 / Tape & Reel
PD = Specific Device Code
M = Date Code
G= PbFree Package
(*Note: Microdot may be in either location)
50 V 10 W @ 10 V
V(BR)DSS RDS(ON) MAX
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www.cnsemi.com
BSS84L, BVSS84L, SBSS84L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS 50 Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.1
15
60
mAdc
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS ±10 nAdc
ON CHARACTERISTICS (Note 2)
GateSource Threaded Voltage (VDS = VGS, ID = 250 mA) VGS(th) 0.9 − −2.0 Vdc
Static DraintoSource OnResistance (VGS = 5.0 Vdc, ID = 100 mAdc) RDS(on) 4.7 10 W
Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) |yfs| 50 mS
DYNAMIC CHARACTERISTICS
Input Capacitance VDS = 5.0 Vdc Ciss 36 pF
Output Capacitance VDS = 5.0 Vdc Coss 17
Transfer Capacitance VDG = 5.0 Vdc Crss 6.5
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
VDD = 15 Vdc, ID = 2.5 Adc,
RL = 50 W
td(on) 3.6 ns
Rise Time tr9.7
TurnOff Delay Time td(off) 12
Fall Time tf1.7
Gate Charge VDD = 40 Vdc, ID = 0.5 A,
VGS = 10 V
QT2.2 nC
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current IS − −0.130 A
Pulsed Current ISM − −0.520
Forward Voltage (Note 3) VGS = 0 V, IS = 130 mA VSD − −2.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
Figure 1. Transfer Characteristics
1 1.5 2 2.5 3
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. OnRegion Characteristics
VDS = 10 V
150°C
25°C
-55°C
024 10
0
0.15
0.2
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
6
0.05
8
0.3
0.1
3.5
0.5
0.25
13 957
-3.25 V
-2.75 V
-2.25 V
-2.5 V
-3.0 V
VGS = -3.5 V
4
0.35
0.4
0.5
0.45 TJ = 25°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
5° vfisymv 30,5“
BSS84L, BVSS84L, SBSS84L
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3
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 3. OnResistance versus Drain Current
0 0.2 0.4 0.6
2
5
6
Figure 4. OnResistance versus Drain Current
-ID, DRAIN CURRENT (AMPS)
Figure 5. OnResistance Variation with Temperature
1
0.001
0.1
1
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Charge
-VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
25°C
VGS = -4.5 V
VGS = -10 V
ID = -0.52 A
-55 -5 45 95 145
TJ = 150°C
4
0.6
0.8
0 0.5 1.0 1.5
3
0.01
-55°C25°C
2.0
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.4 0.6
2
5
6
-ID, DRAIN CURRENT (AMPS)
VGS = -10 V
4
3
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
-6
-2
0
QT, TOTAL GATE CHARGE (pC)
-8
-4
500
VDS = -40 V
TJ = 25°C
1000
ID = -0.5 A
1500
0.1 0.3 0.5
150°C
-55°C
7
4.5
5.5
3.5
2.5
6.5
0.1 0.3 0.5
1.2
2
1.4
1.6
1.8
VGS = -4.5 V
ID = -0.13 A
2000
2.5 3.0
150°C
25°C
-55°C
8
9
7
-5
-1
-7
-3
ID, DRAIN CURRENT (AMPS)
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SOT23 (TO236)
CASE 31808
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= PbFree Package
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODEANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODEANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOT23 (TO236)
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