BC84xxPDW1 Series Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 12 1Publication Order Number:
BC846BPDW1T1/D
BC846BPDW1,
BC847BPDW1,
BC848CPDW1 Series
Dual General Purpose
Transistors
NPN/PNP Duals (Complementary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS − NPN
Rating Symbol Value Unit
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
VCEO 65
45
30
V
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VCBO 80
50
30
V
Emitter−Base Voltage VEBO 6.0 V
Collector Current − Continuous IC100 mAdc
Collector Current − Peak ICM 200 mAdc
MAXIMUM RATINGS − PNP
Rating Symbol Value Unit
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
VCEO −65
−45
−30
V
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VCBO −80
−50
−30
V
Emitter−Base Voltage VEBO −6.0 V
Collector Current − Continuous IC−100 mAdc
Collector Current − Peak ICM −200 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
Q1
(1)(2)
(3)
(4) (5) (6)
Q2
XX= Device Code
M = Date Code
G= Pb−Free Package
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device Package Shipping
ORDERING INFORMATION
BC847BPDW1T2G SOT−363
(Pb−Free) 3,000 /
Tape & Ree
l
SBC847BPDW1T1G SOT−363
(Pb−Free) 3,000 /
Tape & Ree
l
BF
BF
Mark
BC848CPDW1T1G SOT−363
(Pb−Free) 3,000 /
Tape & Ree
l
BL
BC846BPDW1T1G,
SBC846BPDW1T1G SOT−363
(Pb−Free) 3,000 /
Tape & Ree
l
BB
XX MG
G
1
6
(Note: Microdot may be in either location)
SBC846BPDW1T2G SOT−363
(Pb−Free) 3,000 /
Tape & Ree
l
BB
BC847BPDW1T1G SOT−363
(Pb−Free) 3,000 /
Tape & Ree
l
BF
SBC847BPDW1T3G SOT−363
(Pb−Free) 10,000 /
Tape & Ree
l
BF
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD380
250
3.0
mW
mW/°C
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 328 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CEO
65
45
30
V
CollectorEmitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846, SBC846 Series
BC847B, SBC847B Only
BC848 Series
V(BR)CES
80
50
30
V
CollectorBase Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CBO
80
50
30
V
EmitterBase Breakdown Voltage
(IE = 1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)EBO
6.0
6.0
6.0
V
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
15
5.0 nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC84B7
BC848C
hFE
200
420
150
270
290
520
475
800
CollectorEmitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA) All devices except SBC847BPDW1T1G
SBC847BPDW1T1G only
(IC = 100 mA, IB = 5.0 mA) All devices
(IC = 2 mA, IB = 0.5 mA) SBC847BPDW1T1G only
VCE(sat)
0.024
0.25
0.1
0.6
V
BaseEmitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
0.7
0.9
V
BaseEmitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on) 580
660
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 4.5 pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF 10 dB
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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3
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = −10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CEO
−65
−45
−30
V
CollectorEmitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CES
−80
−50
−30
V
CollectorBase Breakdown Voltage
(IC = −10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CBO
−80
−50
−30
V
EmitterBase Breakdown Voltage
(IE = −1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)EBO
−6.0
−6.0
−6.0
V
Collector Cutoff Current
(VCB = −30 V)
(VCB = −30 V, TA = 150°C)
ICBO
−15
−4.0 nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(IC = −2.0 mA, VCE = −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
hFE
200
420
150
270
290
520
475
800
CollectorEmitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA) All devices except SBC847BPDW1T1G
SBC847BPDW1T1G only
(IC = −100 mA, IB = −5.0 mA) All devices
(IC = −2 mA, IB = −0.5 mA) SBC847BPDW1T1G only
VCE(sat)
−0.024
−0.3
−0.1
−0.65
V
BaseEmitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
−0.7
−0.9
V
BaseEmitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on) −0.6
−0.75
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT100 MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz) Cob 4.5 pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF 10 dB
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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4
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
Figure 1. DC Current Gain vs. Collector
Current Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
500
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current Figure 4. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 5 V
150°C
−55°C
25°C
IC/IB = 20
150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
VCE = 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
Figure 5. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
-1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
0.5 5.0 20 50 100
-55°C to 125°C
qVB for VBE
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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5
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 8. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25°C
Cob
Cib
5) 0 \\\ \
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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TYPICAL PNP CHARACTERISTICS — BC846/SBC846
Figure 9. DC Current Gain vs. Collector
Current Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
500
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current Figure 12. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 5 V
150°C
−55°C
25°C
IC/IB = 20
150°C
55°C
25°C
0.4
0.9 IC/IB = 20
150°C
−55°C
25°C
VCE = 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
Figure 13. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 14. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
-1.0
-1.2
-1.6
-2.0
-0.02 -1.0 -10
0-20
-0.1
-0.4
-0.8
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
-0.2 -2.0 -10 -200
-1.0
TJ = 25°C
IC =
-10 mA
-0.05 -0.2 -0.5 -2.0 -5.0
-100 mA
-20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
-0.5 -5.0 -20 -50 -100
-55°C to 125°C
qVB for VBE
-50 mA -200 mA
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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TYPICAL PNP CHARACTERISTICS — BC846/SBC846
Figure 15. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 16. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
-0.1 -0.2 -1.0 -50
2.0 -2.0 -10 -100
100
200
500
50
20
20
10
6.0
4.0
-1.0 -10 -100
VCE = -5.0 V
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
-0.5 -5.0 -20
TJ = 25°C
Cob
Cib
8.0
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES
Figure 17. DC Current Gain vs. Collector
Current Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
500
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current Figure 20. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 5 V
150°C
−55°C
25°C
IC/IB = 20
150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
VCE = 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
1.0
Figure 21. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°C
TA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES
Figure 23. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 24. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
: 7200 mA ‘6: 40am
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES
Figure 25. DC Current Gain vs. Collector
Current Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
500
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.35
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current Figure 28. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 5 V
150°C
−55°C
25°C
IC/IB = 20 150°C
−55°C
25°C
0.4
0.9 IC/IB = 20
150°C
−55°C
25°C
VCE = 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
0.30
Figure 29. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 30. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
-1.2
-1.6
-2.0
-0.02 -1.0 -10
0-20
-0.1
-0.4
-0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
-0.2 -10 -100
-1.0
-55°C to +125°C
IC = -100 mA
IC = -20 mA
IC = -200 mAIC = -50 mAIC =
-10 mA
TA = 25°C
1.0
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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11
TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES
Figure 31. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 32. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
-0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
-0.5
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
TA = 25°C
Cob
Cib
-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
150
-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50
VCE = -10 V
TA = 25°C
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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TYPICAL NPN CHARACTERISTICS − BC848 SERIES
Figure 33. DC Current Gain vs. Collector
Current Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
1000
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current Figure 36. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 5 V
150°C
−55°C
25°C
IC/IB = 20
150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
VCE = 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
500
600
700
800
900
1.0
Figure 37. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 38. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°C
TA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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TYPICAL NPN CHARACTERISTICS − BC848 SERIES
Figure 39. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 40. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
: 7200 mA ‘6: 40am
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
www.onsemi.com
14
TYPICAL PNP CHARACTERISTICS − BC848 SERIES
Figure 41. DC Current Gain vs. Collector
Current Figure 42. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
1000
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 43. Base Emitter Saturation Voltage vs.
Collector Current Figure 44. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 5 V
150°C
−55°C
25°C
IC/IB = 20 150°C
55°C
25°C
0.4
0.9 IC/IB = 20
150°C
−55°C
25°C
VCE = 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
500
600
700
800
900
Figure 45. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 46. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
-1.2
-1.6
-2.0
-0.02 -1.0 -10
0-20
-0.1
-0.4
-0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
-0.2 -10 -100
-1.0
-55°C to +125°C
IC = -100 mA
IC = -20 mA
IC = -200 mAIC = -50 mAIC =
-10 mA
TA = 25°C
1.0
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
www.onsemi.com
15
TYPICAL PNP CHARACTERISTICS − BC848 SERIES
Figure 47. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 48. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
-0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
-0.5
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
TA = 25°C
Cob
Cib
-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
150
-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50
VCE = -10 V
TA = 25°C
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
www.onsemi.com
16
Figure 49. Thermal Response
Figure 50. Safe Operating Area − BC846
VCE, COLLECTOR-EMITTER VOLTAGE (V)
1000
1.0
IC, COLLECTOR CURRENT (mA)
3 ms
100
10
1.0
10 100
1 s
The safe operating area curves indicate IC−VCE lim-
its of the transistor that must be observed for reliable op-
eration. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 50 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk)
150°C. TJ(pk) may be calculated from the data in Figure
49. At high case or ambient temperatures, thermal limita-
tions will reduce the power that can be handled to values
less than the limitations imposed by the secondary break-
down.
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
1.00
RESISTANCE (NORMALIZED)
0.1
0.01
0.001
10 100 1.0k 10k 100k
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
ZqJA(t) = r(t) RqJA
RqJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
1.0M
0.02
0.01
10 ms
100 ms
1 ms
100 ms
10 ms
1 ms
BC846
Figure 51. Safe Operating Area − BC847
VCE, COLLECTOR-EMITTER VOLTAGE (V)
1000
1.0
IC, COLLECTOR CURRENT (mA)
3 ms
100
10
1.0
10 100
1 s
10 ms
100 ms
1 ms
100 ms
10 ms
1 ms
BC847
Figure 52. Safe Operating Area − BC848
VCE, COLLECTOR-EMITTER VOLTAGE (V)
1000
1.0
IC, COLLECTOR CURRENT (mA)
3 ms
100
10
1.0
10 100
1 s
10 ms
100 ms
1 ms
100 ms
10 ms
1 ms
BC848
E EH15“ TOP VIEW m l“ >s HE? R SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT‘ o 65 44 le PITCH DlMENSlONS MILUMEIERS “Fol adaillonal lnformallon on our Ph-Flee sllalegy and soldering aelails, please download me ON Semlconducmr Soldenng and Moumlng Techniques Releleriee Manualy SOLDERRM/D STYLES ON PAGE 2 0N Semiwndudw" TEs DlMENsloNlNe AND ToLEHANcle PER CONTROLUNG DlMENsloN MILUMEIE DlMENsloNs D AND Ei DO NoT lNCLU PROIRUSlONS. 0R GATE sums Mo SIGNS. 0R GATE EURRS SHALL NoT DlMENsloNs D AND Ei AT THE oDT THE PLASHC Dom AND DATuM H DATuMs A AND a ARE DETERMWED AT DA DlMENsloNs e AND c APPLV To THE ELAT LEAD BETWEEN a De AND in 15 FROM THE DlMENsloN c DOES NOT lNCLuDE DAMB ALLOWAELE DAMBAR PROTRUSlON sHA EXCESS or DlMENsloN c AT MAleuM TloN THE DAMEAR cANNoT BE locAT RADlUS 0: THE FOOT L E I: me Dec 025 name nuaa cum :2 ans nis D22 nun: anus Du D H30 am: am new ulna case 5 a so flflfl O iUUU xxx : Spelelc Device Code M : Dale Code" . : Ph-Free Package (Ncle. Micicaol may be in eimei localionl 'Daie Code orientallon and/or posmon may ualy depending upon manulaclunng localion “This mlclmalion is genelie Please ielel lo device aala sheel loi actual pan marking Pb- Fiee Indlcalol “a“ oi micioacl- “ " may cl may nol be plesem Some ploducls may nol lollow llie Generic Marking. ON Semlcunduclm and aie hademalks cl Semlcanduclur ecmpcnenls lndusllles. LLC dba oN Semiceneuclei ei ils suhsldlarles in lne Unlled Slales anelci cinei caunlnes ON Semlcunduclar vesewes me "am In make changes wllhmfl lunnei ncnce In any cicuucls neiein oN Semlwnduc‘m makes m7 wananly. represenlalmn ci guaianlee regardlng lne suilacilily cl ics manual: ici any paniculai purpase nci dues ON Semlcnnduclm assume any liacilily aiising culcl lne appllcshan m use cl any pmdudm ciicuil anu specilically dlsclalms any and all liacilily including Wilneul liniilalicn special censeauenlial m incieenlal damages oN Semlmnduclar dues nn| ccnuey any license under ils palenl iignls nei lne ngnls cl clneis
SC88/SC706/SOT363
CASE 419B02
ISSUE Y
DATE 11 DEC 2012
SCALE 2:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd M
123
A1
A
c
654
E
b
6X
XXXMG
G
XXX = Specific Device Code
M = Date Code*
G= PbFree Package
GENERIC
MARKING DIAGRAM*
1
6
STYLES ON PAGE 2
1
DIM MIN NOM MAX
MILLIMETERS
A−−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b0.15 0.20 0.25
C0.08 0.15 0.22
D1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e0.65 BSC
L0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc C
A2
6X
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42985B
DOCUMENT NUMBER:
DESCRIPTION:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
SC88/SC706/SOT363
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ON Semxcunduclm and are hademavks av Semxcanduclur Campunenls lnduslnes. uc dha ON Samanaucxar ar us suhsxdxanes m xna Umled sxaxas andJm mhev cmm‘nes ON Semxcunduclar vesewes me “gm to make changes wuhum mnna. mouse to any pruduns necem ON Semanduc‘m makes nu wanamy. represenlalmn m guarantee regardmg ma sumahmly at W; manual: can any pamcu‘av purpase nnv dues ON Semumnduclm assume any Mammy snsmg mm xna aapncauan m use M any pmduclnv mum and specmcsl‘y dwsc‘axms any and an Mammy mc‘udmg wxlham hmma‘mn spema‘ cansequemm m \nmdeula‘ damages ON Semxmnduclar dues nn| away any hcense under Ms pa|EM nghls Ivar xna ngms av n|hers
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 3:
CANCELLED
STYLE 2:
CANCELLED
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 8:
CANCELLED
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
SC88/SC706/SOT363
CASE 419B02
ISSUE Y
DATE 11 DEC 2012
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42985B
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
SC88/SC706/SOT363
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm 9 www nnserm cum
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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