GP1S196HCZxF Datasheet by Sharp Microelectronics

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GP1S196HCZ0F/GP1S196HCZSF
1
Sheet No.: D3-A01001FEN
Date Jun. 30. 2005
© SHARP Corporation
Notice The content of data sheet is subject to change without prior notice.
In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device.
GP1S196HCZ0F
GP1S196HCZSF
Gap : 1.1mm, Slit : 0.3mm
Phototransistor Output,
Compact Transmissive
Photointerrupter
Description
GP1S196HCZ0F is a compact-package, photo-tran-
sistor output, transmissive photointerrupter, with oppos-
ing emitter and detector in a molding that provides non-
contact sensing. The compact package series is a result
of unique technology combing transfer and injection
molding.
This device is half the size of the rest of the parts in
this family.
Features
1. Transmissive with phototransistor output
2. Highlights :
• Compact Size
• Low Profi le
• Narrow Gap
Through-hole :
GP1S196HCZ0F
• SMT : GP1S196HCZSF
3. Key Parameters :
• Gap Width : 1.1mm
• Slit Width (detector side): 0.3mm
• Package : 3.1×2×2.7mm
4. RoHS directive compliant
Agency approvals/Compliance
1. Compliant with RoHS directive
Applications
1. General purpose detection of object presence or mo-
tion.
2. Example : printer, lens control for camera
menmamn
2
Sheet No.: D3-A01001FEN
GP1S196HCZ0F/GP1S196HCZSF
Internal Connection Diagram
2(1.62)
40.15
(1.05)
2(0.3)
2(1.5)
2(1.75)
2(0.85)
2(0.2)
2.7
2.1
2(0.7)
a
2
a'
3.1
40.3
Identification
mark
(0.3)
Slit width
a-aʼ section
2
(2.15)
Same potential
as
Same potential as
1.3
1.1
(0.75)
Center of
light path
21.7±0.3
21.5±0.3
0.4
Gate position
4(R0.2)
(1.2)
1
1
2
43
3
Top view
Outline Dimensions (Unit : mm)
Product mass : approx. 0.022g
Plating material : SnCu (Cu : TYP. 2%)
• Unspecifi ed tolerance : ±0.1mm.
• Dimensions in parenthesis are shown for reference.
• The dimensions indicated by refer to those measured from the
lead base.
• The dimensions shown do not include those of burrs.
Burr's dimensions : 0.15mm MAX.
• The lead may be exposed at the painting out portion.
• There is agreer identifi cation mark on he light emitting side.
2(1.62)
(1.05)
2(0.3)
2(1.5)
2(1.75)
2(0.85)
2(0.2)
2.7
2.1
2(0.7)
a
2
a'
3.1
40.3
3.2±0.2
(2.15)
21.85
1.3
1.1
(0.75)
Center of
light path
(0.04)
0.4
Gate position
4(R0.2)
0.1
(1.2)
12
43
(0.3)
Slit width
Identification
mark
a-aʼ section
Same potential
as
Same potential as
1
3
Top view
Through-Hole [GP1S196HCZ0F]SMT Gullwing Lead-Form [GP1S196HCZ0F]
Product mass : approx. 0.02g
• Unspecifi ed tolerance : ±0.1mm.
• Dimensions in parenthesis are shown for reference.
• The dimensions indicated by refer to those measured lead
plating portion.
• The dimensions shown do not include those of burrs.
Burr's dimensions : 0.15mm MAX.
• The lead may be exposed at the painting out portion.
• There is agreer identifi cation mark on he light emitting side.
Top view
1
2 1
3 4
2
3
4
Anode
Collector
Emitter
Cathode
Country of origin
Japan
3
Sheet No.: D3-A01001FEN
GP1S196HCZ0F/GP1S196HCZSF
Absolute Maximum Ratings
Electro-optical Characteristics
(Ta=25˚C )
Parameter Symbol Rating Unit
Input
Forward current IF30 mA
Reverse voltage VR6V
Power dissipation P 75 mW
Output
Collector-emitter voltage
VCEO 35 V
Emitter-collector voltage
VECO 6V
Collector current
IC20 mA
Collector power dissipation PC75 mW
Total power dissipation Ptot 100 mW
Operating temperature Topr 25 to +85 ˚C
Storage temperature Tstg 40 to +100 ˚C
1Soldering temperature Tsol 260 ˚C
1 For 3s or less
(Ta=25˚C )
Parameter Symbol Condition MIN. TYP. MAX. Unit
Input Forward voltage VFIF=20mA 1.2 1.4 V
Reverse current IRVR=3V −−
10 μA
Output Collector dark current ICEO VCE=20V −−
100 nA
Transfer
charac-
teristics
Collector current ICVCE=5V, IF=5mA 100 400 μA
Collector-emitter saturation voltage VCE(sat) IF=10mA, IC=40μA−−
0.4 V
Response time Rise time trVCE=5V, IC=100μA, RL=1kΩ50 150 μs
Fall time tf50 150
0.3mm or more
Soldering area
(GP1S196HCZ0F)
Fig.5 Collector Current vs. Collector- emitter Voltage u 2 4 h x In 725 U 25 50 7s ('ullccmrrcmmm \nlmgc w, m A"“““"““'“"“"“"'° ““7 sham Nu Da-
4
Sheet No.: D3-A01001FEN
GP1S196HCZ0F/GP1S196HCZSF
Fig.5 Collector Current vs. Collector-
emitter Voltage
Fig.6 Relative Collector Current vs.
Ambient Temperature
Fig.3 Forward Current vs. Forward
Voltage
Fig.4 Collector Current vs. Forward
Current
25˚C
Ta=85˚C
65˚C
45˚C
25˚C
0˚C
0 0.5 1 1.5 2
10
100
1
Forward current IF (mA)
Forward voltage VF (V) Forward current IF (mA)
0
1
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0 2 4 6 8 10 12 14 16 18 20
Collector current IC (mA)
VCE=5V
Ta=25˚C
5mA
IF30mA
20mA
10mA
0
02468
2
1.6
1.2
0.8
0.4
10
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Ta25˚C
Relative collector current (%)
Ambient temperature Ta (C)
0
130
120
110
100
90
80
70
60
50
40
30
20
10
02525 50 75
IF=5mA
VCE=5V
IC=100% at Ta=25˚C
Fig.1 Forward Current vs. Ambient
Temperature
Fig.2 Power Dissipation vs.
Ambient Temperature
0
60
50
40
30
20
10
25 0 25 50 75 85 100
Forward current IF (mA)
Ambient temperature Ta (˚C)
0
60
40
80
100
120
25 10050 75 85025
20
Power dissipation P, Pc, Ptot (mW)
Ambient temperature Ta (˚C)
Ptot
P,Pc
75
15
U L 1 m m and h:\|\|unL'L' 11. use; Fig.11 Relative Collector Current vs. Sh Distance (1) IUD 90 M) 70 «0 m mncnt m 50 40 m :4 20 m I.=5mA 0 \'( ‘ 75v «1 Us I 15 «1 Us I 15 8mm mmmg dhmncc L (mun Shmd mmmg umnm L (mm) sham Nu Dfl-AO
5
Sheet No.: D3-A01001FEN
GP1S196HCZ0F/GP1S196HCZSF
Fig.7 Collector-emitter Saturation Votage vs.
Ambient Temperature
Fig.8 Collector Dark Current vs.
Ambient Temperature
Fig.9
Response Time vs. Load Resistance
Fig.10
Test Circuit for Response Time
Fig.11
Relative Collector Current vs. Shield
Distance (1)
Fig.12
Relative Collector Current vs. Shield
Distance (1)
Collector-emitter saturation voltage VCE (sat) (V)
Ambient temperature Ta (˚C)
IF=10mA
IC=40μA
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
25 7550250
0.04
0.1 110
1 000
10
1
100
100
Response time (μs)
ts
td
tf
tr
Load resistance RL (kΩ)
VCE=5V
IC=100μA
Ta=25˚C
1010
109
107
106
108
0 255075100
Collector dark current ICEO (A)
Ambient temperature Ta (˚C)
VCE20V
0L
Relative collector current (%)
10
0
20
30
40
50
60
90
100
70
80
0 0.5 1 1.5 2
Shield moving distance L (mm)
IF=5mA
VCE=5V
Relative collector current (%)
10
0
20
30
40
50
60
90
100
70
80
0 0.5 1 1.5 2
Shield moving distance L (mm)
IF=5mA
VCE=5V
0
L
10%
Input
Output
Input Output
90%
ts
td
VCC
RDRL
tf
tr
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Ti 1 4%,, \ ,i,i,T,77,i,i,i ,j,i,, 1 WW; \
6
Sheet No.: D3-A01001FEN
GP1S196HCZ0F/GP1S196HCZSF
Design Considerations
Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 1.4mm or more from the top of elements.
(Example)
This product is not designed against irradiation and incorporates non-coherent IRED.
Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
Recommended Foot Print (Only for GP1S196HCZSF)
1.4mm or more 1.4mm or more
1.3
0.7
3.7
1.65
0.6
7
Sheet No.: D3-A01001FEN
GP1S196HCZ0F/GP1S196HCZSF
Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category Material Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm) Response time (μs)
Phototransistor Silicon (Si) 930 700 to 1 200 20
• Photo emitter (qty. : 1)
Category Material Maximum light emitting
wavelength (nm) I/O Frequency (MHz)
Infrared emitting diode
(non-coherent) Gallium arsenide (GaAs) 950 0.3
Material
Case Lead frame Lead frame plating
Black polyphernylene
sulfi de resin (UL94 V-0) 42Alloy SnCu plating
8
Sheet No.: D3-A01001FEN
GP1S196HCZ0F/GP1S196HCZSF
Manufacturing Guidelines
Storage and management after open (Only for GP1S196HCZSF)
Storage condition
Storage temp.: 5 to 30˚C, Storage humidity : 70%RH or less at regular packaging.
Treatment after opening the moisture-proof package
After opening, you should mount the products while keeping them on the condition of 5 to 25˚C and 70%RH
or less in humidity within 4 days.
After opening the bag once even if the prolonged storage is necessary, you should mount the products within
two weeks.
And when you store the rest of products you should put into a DRY BOX. Otherwise after the rest of products
and silicagel are sealed up again, you should keep them under the condition of 5 to 30˚C and 70%RH or
less in humidity.
Baking before mounting
When the above-mentioned storage method could not be executed, please process the baking treatment
before mounting the products.
However the baking treatment is permitted within one time.
Recommended condition : 125˚C, 16 to 24 hours
Do not process the baking treatment with the product wrapped. When the baking treatment processing, you
should move the products to a metallic tray or fi x temporarily the products to substrate.
Soldering Method
Refl ow Soldering (Only for GP1S196HCZSF) :
Refl ow soldering should follow the temperature profi le shown below.
Soldering should not exceed the curve of temperature profi le and time.
Please solder within one time.
MAX
240˚C
MAX
160˚C
200˚C
25˚C
1 to 4˚C/s
MAX120s
MAX10s
MAX60s
MAX90s
1 to 4˚C/s
1 to 4˚C/s
9
Sheet No.: D3-A01001FEN
GP1S196HCZ0F/GP1S196HCZSF
Flow Soldering:
Soldering should be completed below 260˚C and within 3 s.
Please solder within one time.
Soldering area is 0.3mm or more away from the bottom of housing.
Please take care not to let any external force exert on lead pins.
Please don't do soldering with preheating, and please don't do soldering by refl ow.
Other notice
Please test the soldering method in actual condition and make sure the soldering works fine, since the
impact on the junction between the device and PCB varies depending on the cooling and soldering
conditions.
Cleaning instructions
Solvent cleaning :
Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less.
Ultrasonic cleaning :
Do not execute ultrasonic cleaning.
Recommended solvent materials :
Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.
Presence of ODC
This product shall not contain the following materials.
And they are not used in the production process for this product.
Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)
Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated
diphenyl ethers (PBDE).
10
Sheet No.: D3-A01001FEN
GP1S196HCZ0F/GP1S196HCZSF
Package specifi cation
Sleeve package
1. Through-hole (GP1S196HCZ0F)
Package materials
Sleeve : Polycarbonate
Stopper : Styrene-Elastomer
Package method
MAX. 200 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless
stoppers.
MAX. 50 sleeves in one case.
2. SMT Gullwing (GP1S196HCZSF)
Package materials
Sleeve : Polycarbonate
Stopper : Styrene-Elastomer
Aluminium laminated Bag : Nylon, Polyphernylene, Aluminium
Package method
MAX. 200 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless
stoppers.
MAX. 50 sleeves with silicagel are enclosed in aluminium laminated bag. After sealing up the bag, it encased
in one case.
11
Sheet No.: D3-A01001FEN
GP1S196HCZ0F/GP1S196HCZSF
Important Notices
· The circuit application examples in this publication
are provided to explain representative applications of
SHARP devices and are not intended to guarantee any
circuit design or license any intellectual property rights.
SHARP takes no responsibility for any problems related
to any intellectual property right of a third party resulting
from the use of SHARP's devices.
· Contact SHARP in order to obtain the latest device
specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the
specifi cations, characteristics, data, materials, structure,
and other contents described herein at any time
without notice in order to improve design or reliability.
Manufacturing locations are also subject to change
without notice.
· Observe the following points when using any devices
in this publication. SHARP takes no responsibility for
damage caused by improper use of the devices which
does not meet the conditions and absolute maximum
ratings to be used specifi ed in the relevant specifi cation
sheet nor meet the following conditions:
(i) The devices in this publication are designed for use
in general electronic equipment designs such as:
--- Personal computers
--- Offi ce automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii) Measures such as fail-safe function and redundant
design should be taken to ensure reliability and safety
when SHARP devices are used for or in connection
with equipment that requires higher reliability such as:
--- Transportation control and safety equipment (i.e.,
aircraft, trains, automobiles, etc.)
--- Traffi c signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii) SHARP devices shall not be used for or in
connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g.,
scuba).
· If the SHARP devices listed in this publication fall
within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Law of Japan, it
is necessary to obtain approval to export such SHARP
devices.
· This publication is the proprietary product of SHARP
and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be
reproduced or transmitted in any form or by any means,
electronic or mechanical, for any purpose, in whole or in
part, without the express written permission of SHARP.
Express written permission is also required before any
use of this publication may be made by a third party.
· Contact and consult with a SHARP representative
if there are any questions about the contents of this
publication.
[H135]

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