SI1050X Datasheet by Vishay Siliconix

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Vishay Siliconix
Si1050X
Document Number: 73896
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
1
N-Channel 8 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
100 % Rg Teste d
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch for Portable Devices
PRODUCT SUMMARY
VDS (V) RDS(on) ()I
D (A) Qg (Typ.)
8
0.086 at VGS = 4.5 V 1.34a
7.1
0.093 at VGS = 2.5 V 1.29
0.102 at VGS = 1.8 V 1.23
0.120 at VGS = 1.5 V 0.7
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 8V
Gate-Source Voltage VGS ± 5
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID1.34b, c
A
TA = 70 °C 1.07b, c
Pulsed Drain Current IDM 6
Continuous Source-Drain Diode Current TA = 25 °C IS0.2b, c
Maximum Power Dissipationa
TA = 25 °C PD0.236b, c
W
TA = 70 °C 0.151b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t 5 s RthJA
440 530 °C/W
Steady State 540 650
Ordering Information: Si1050X-T1-GE3 (Lead (Pb)-free and Halogen-free)
SC-89 (6-LEADS)
6
4
1
2
3
5
Top View
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M a rking Code
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P a rt # Code
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Document Number: 73896
S10-2544-Rev. D, 08-Nov-10
Vishay Siliconix
Si1050X
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 8V
VDS Temperature Coefficient VDS/TJID = 250 µA 18.2 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ- 2.55
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.35 0.9 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 8 V, VGS = 0 V 1µA
VDS = 8 V, VGS = 0 V, TJ = 85 °C 10
On-State Drain CurrentaID(on) VDS = 5 V, VGS = 4.5 V 6 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 4.5 V, ID = 1.34 A 0.071 0.086
VGS = 2.5 V, ID = 1.29 A 0.078 0.093
VGS = 1.8 V, ID = 1.23 A 0.085 0.102
VGS = 1.5 V, ID = 0.76 A 0.092 0.120
Forward Transconductance gfs VDS = 4 V, ID = 1.34 A 4.12 S
Dynamicb
Input Capacitance Ciss
VDS = 4 V, VGS = 0 V, f = 1 MHz
585
pFOutput Capacitance Coss 190
Reverse Transfer Capacitance Crss 130
Total Gate Charge Qg VDS = 4 V, VGS = 5 V, ID = 1.34 A 7.7 11.6
nC
VDS = 4 V, VGS = 4.5 V, ID = 1.34 A
7.1 10.7
Gate-Source Charge Qgs 1.14
Gate-Drain Charge Qgd 1.69
Gate Resistance Rgf = 1 MHz 3.5 4.6
Tur n-O n De l ay Tim e td(on)
VDD = 4 V, RL = 3.6
ID 1.1 A, VGEN = 4.5 V, Rg = 1
6.8 10.2
ns
Rise Time tr35 53
Turn-Off DelayTime td(off) 25 37.5
Fall Time tf69
Drain-Source Body Diode Characteristics
Pulse Diode Forward CurrentaISM 6A
Body Diode Voltage VSD IS = 1.0 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr
IF = 1.0 A, dI/dt = 100 A/µs
18.5 28 nC
Body Diode Reverse Recovery Charge Qrr 3.7 5.7
nsReverse Recovery Fall Time ta6.7
Reverse Recovery Rise Time tb11.8
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Document Number: 73896
S10-2544-Rev. D, 08-Nov-10
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Vishay Siliconix
Si1050X
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Qg - Gate Charge
0
1
2
3
4
5
6
0.0 0.6 1.2 1.82.4
VDS - Drain-to-Source Voltage (V)
)A( tnerruC niarD -I D
V = 5 V thru 2 V
V = 1.5 V
V = 1.0 V
GS
GS
GS
0.03
0.06
0.09
0.12
0.15
0123456
V
GS
= 4.5 V
ID - Drain Current (A)
V
GS
= 1.5 V
R)no(SD (Ω) ecnatsis
e
R-nO
-
V
GS
= 1.8 V
VGS = 2.5 V
0
1
2
3
4
5
0246810
I
D
= 1.34 A
)V( e
g
atl
o
V ecruoS-ot-etaG
-
Q
g
- Total Gate Charge (nC)
VSG
V
GS
= 6.4 V
V
DS
= 4 V
Transfer Characteristics curves vs. Temp.
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.4 0.81.2 1.6 2.0
TC = 125 °C
T
C
= - 55 °C
VGS - Gate-to-Source Voltage (V)
)A( tnerruC niarD -I D
TC = 25 °C
Crss
0
200
400
600
800
1000
012345678
Coss
Ciss
VDS - Drain-to-Source Voltage (V)
)Fp( ecnati
c
a
pa
C
-
C
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
R) n o ( S D ce n a t s i s
e
R - n O -
)dezilam
r
oN(
V
GS
= 2.5 V, I
D
= 1.30 A
V
GS
= 1.5 V, I
D
= 0.76 A
V
GS
= 4.5 V, I
D
= 1.34 A
VGS = 1.8 V, ID = 1.23 A
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Document Number: 73896
S10-2544-Rev. D, 08-Nov-10
Vishay Siliconix
Si1050X
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.001
0.01
1
VSD
)A( tnerruC ecruoS -I S
- Source-to-Drain Voltage (V)
1.0
0.8 0.6
0.4
0.2 0.0
0.1
10
T = 150 °C
J T = 25 °C
J
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
TJ - Temperature (°C)
V)
ht
(
SG Variance (V)
RDS(on) vs VGS vs Temperature
Single Pulse Power
0.00
0.04
0.08
0.12
0.16
012345
VGS - Gate-to-Source Voltage (V)
R)no(SD (Ω) ecnatsiseR-nO -
T
A = 25 °C
T
A = 125 °C
I
D = 1.34 A
0
3.0
5.0
1.0
2.0
) W
(
r e w o
P
Time (s)
4.0
1000
100
10 1
0.1
0.01 0.001
Safe Operating Area, Junction-to-Ambient
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Document Number: 73896
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
5
Vishay Siliconix
Si1050X
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73896.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3 10
-2 1 10 1000
10
-1
10
-4 100
0.1
0.01
0.001
0.0001
Square Wave Pulse Duration (s)
e v
i t c
e
f f
E
d e
z i
l
a
m
r
o
N t
n e
i s
n a
r T
e c
n
a
d
e
p m
I
l
a m
r
e
h
T
1
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 540 °C/W
3. T
JM - TA = PDMZthJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
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Package Information
www.vishay.com Vishay Siliconix
Revision: 11-Aug-14 1Document Number: 71612
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SC-89 6-Leads (SOT-563F)
Notes
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
6
4
32
4
32
5
4
Caaa
C
M
ddd A–B D
2x
e
B6x b
Caaa
2x
D
E/2
E
Cbbb
2x
123
654
E1
E1/2
A
D
e1
L1
L
A
B
C
A1
A1
SECTION B-B
DETAIL “A”
SEE DETAIL “A”
DIM. MILLIMETERS
MIN. NOM. MAX.
A 0.56 0.58 0.60
A1 0 0.02 0.10
b 0.15 0.22 0.30
c 0.10 0.14 0.18
D 1.50 1.60 1.70
E 1.50 1.60 1.70
E1 1.15 1.20 1.25
e 0.45 0.50 0.55
e1 0.95 1.00 1.05
L 0.25 0.35 0.50
L1 0.10 0.20 0.30
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
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Application Note 826
Vishay Siliconix
Document Number: 72605 www.vishay.com
Revision: 21-Jan-08 21
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
(1.300)
0.069
(1.753)
0.019
(0.478)
0.031
(0.798)
0.012
(0.300)
0.051
(0.201)
0.020
(0.500)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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