SI2314EDS Datasheet by Vishay Siliconix

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— VISHAYE V
Vishay Siliconix
Si2314EDS
Document Number: 71611
S09-0130-Rev. D, 02-Feb-09
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
ESD Protected: 3000 V
APPLICATIONS
LI-lon Battery Protection
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A)
20
0.033 at VGS = 4.5 V 4.9
0.040 at VGS = 2.5 V 4.4
0.051 at VGS = 1.8 V 3.9
Ordering Information: Si2314EDS-T1-E3 (Lead (Pb)-free)
Si2314EDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
*Marking Code
Si2314EDS (C4)*
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
G
S
N-Channel
3 kΩ
D
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ± 12
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
4.9 3.77
A
TA = 70 °C 3.9 3.0
Pulsed Drain CurrentbIDM 15
Avalanche Currentb
L = 0.1 mH IAS 15
Single Avalanche Energy EAS 11.25 mJ
Continuous Source Current (Diode Conduction)aIS1.0 A
Power DissipationaTA = 25 °C PD
1.25 0.75 W
TA = 70 °C 0.80 0.48
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat 5 s RthJA
75 100
°C/W
Steady State 120 166
Maximum Junction-to-Foot Steady State RthJF 40 50
— VISHAK V
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2
Document Number: 71611
S09-0130-Rev. D, 02-Feb-09
Vishay Siliconix
Si2314EDS
Notes:
a. Pulse test: PW 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit Min. Typ. Max.
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.45 0.95
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 1.5
µA
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V 1
VDS = 20 V, VGS = 0 V, TJ = 70 °C 75
On-State Drain CurrentaID(on) V
DS 10 V, VGS = 4.5 V 15 A
Drain-Source On-ResistanceaRDS(on)
VGS = 4.5 V, ID = 5.0 A 0.027 0.033
Ω
VGS = 2.5 V, ID = 4.5 A 0.033 0.040
VGS = 1.8 V, ID = 4.0 A 0.042 0.051
Forward Transconductanceagfs VDS = 15 V, ID = 5.0 A 40 S
Diode Forward Voltage VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = 10 V, VGS = 4.5 V, ID = 5.0 A
11.0 14.0
nCGate-Source Charge Qgs 1.5
Gate-Drain Charge Qgd 2.1
Switching
Tur n - O n D e l ay Time td(on)
VDD = 10 V, RL = 10 Ω
ID 1.0 A, VGEN = 4.5 V, Rg = 6 Ω
0.53 0.8
µs
Rise Time tr1.4 2.2
Turn-Off Delay Time td(off) 13.5 20
Fall Time tf5.9 9
Source-Drain Reverse Recovery Time trr IF = 1.0 A, dI/dt = 100 A/µs 13 25 ns
Gate-Current vs. Gate-Source Voltage
0
200
400
600
800
1000
1200
024681012
VGS - Gate-to-Source Voltage (V)
- Gate Current (mA)I
GSS
Gate Current vs. Gate-Source Voltage
0.0001
100
10 000
0.1
1
10
1000
VGS - Gate-to-Source Voltage (V)
- Gate Current (µA)IGSS
0.01
TJ = 150 °C
TJ = 25 °C
0.001
0.1 1 10 100
//
Document Number: 71611
S09-0130-Rev. D, 02-Feb-09
www.vishay.com
3
Vishay Siliconix
Si2314EDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
3
6
9
12
15
01234
VGS = 4.5 V thru 2.0 V
1.5 V
VDS
- Drain-to-Source Voltage (V)
- Drain Current (A)ID
1.0 V
0.5 V
RDS(on) - On-Resistance (Ω)
0.00
0.03
0.06
0.09
0.12
0.15
03691215
ID
- Drain Current (A)
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0
2
4
6
8
0 4 8 12 16 20
VDS = 10 V
ID = 5.0 A
- Gate-to-Source Voltage (V)
Qg
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
3
6
9
12
15
0.0 0.5 1.0 1.5 2.0
TC = 125 °C
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
0
300
600
900
1200
1500
0 4 8 12 16 20
VDS
- Drain-to-Source Voltage (V)
Coss
Ciss
C - Capacitance (pF)
Crss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
VGS = 4.5 V
ID = 5.0 A
TJ - Junction Temperature (°C)
RDS(on) - On-Resistance
(Normalized)
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Document Number: 71611
S09-0130-Rev. D, 02-Feb-09
Vishay Siliconix
Si2314EDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71611.
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
20
1
0.01
VSD
- Source-to-Drain Voltage (V)
IS - Source Current (A)
0.1
TJ = 150 °C
TJ = 25 °C
10
- 0.4
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
Variance (V)VGS(th)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.05
0.10
0.15
0.20
02468
ID = 5.0 A
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
0.01
01
10
12
4
6
100 6000.1
Time (s)
2
8
Power (W)
10
TA = 25 °C
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
— VISHAYm V
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
VISHAY ‘5 H u 0394 o 037 ‘ u ass
AN807
Vishay Siliconix
Document Number: 70739
26-Nov-03
www.vishay.com
1
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
ambient air. This pattern uses all the available area underneath the
body for this purpose.
FIGURE 1. Footprint With Copper Spreading
0.114
2.9
0.059
1.5
0.0394
1.0
0.037
0.95
0.150
3.8
0.081
2.05
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
— VISHAY.. mos (2 692) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} D, Rex men Number 72609 on 2er ca
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
Return to Index
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— VISHAY. V
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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