IRF9393PbF Datasheet by Infineon Technologies

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Infernotionol I912 Rectifier UUULJ Indusxry-Standard SOS Package Mu m -Vendor Compaiibi‘ 'rty RoHS Compliam Comaininq no Lead no Bromide and no Halogen Environmema‘ Iy Friend her Absolute Maximum Ratin s
www.irf.com 1
11/3/10
IRF9393PbF
HEXFET® Power MOSFET
Notes through are on page 2
PD - 97522A
Features and Benefits
Applications
Adaptor Input Switch for Notebook PC
Features Resulting Benefits
SO-8
27
18
3
4
6
5
G
S
S
S
D
D
D
D
Absolute Maximum Ratin
g
s
Parameter Units
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TA = 70°C Power Dissipation
Linear Derating Factor W/°C
TJ Operating Junction and
TSTG Storage Temperature Range
-55 to + 150
2.5
0.02
1.6
Max.
-9.2
-7.3
-75
± 25
-30 V
A
W
°C
Note
Form Quantity
IRF9393PbF SO8 Tube/Bulk 95
IRF9393TRPbF SO8 Tape and Reel 4000
Orderable part number Package Type Standard Pack
V
DS
-30 V
V
GS max
±25 V
R
DS(on) max
(@V
GS
= -10V)
19.4 mΩ
I
D
(@T
A
= 25°C)
-9.2 A
25V VGS max Direct Drive at High VGS
Industry-Standard SO8 Package Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
internationoi 122R Rectifier AB /A Avalanche Characteristics Diode Characteristics Q" Thermal Resistance Rs (3 Re (a
IRF9393PbF
2www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 3.5mH, RG = 25Ω, IAS = -7.5A.
Pulse width 400μs; duty cycle 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
G
D
S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– VC
R
DS(on)
––– 13.3 –––
––– 15.6 19.4
––– 25.6 32.5
V
GS(th)
Gate Threshold Voltage -1.3 -1.8 -2.4 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -5.7 –– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– -1.0
––– ––– -150
I
GSS
Gate-to-Source Forward Leakage ––– ––– -10
Gate-to-Source Reverse Leakage ––– ––– 10
gfs Forward Transconductance 13 –– ––– S
Q
g
Total Gate Charge ––– 14 –– nC V
DS
= -15V, V
GS
= -4.5V, I
D
= - 7.5A
Q
g
Total Gate Charge ––– 25 38
Q
gs
Gate-to-Source Charge –– 3.5 –––
Q
gd
Gate-to-Drain Charge ––– 6.4 ––
R
G
Gate Resistance ––– 15 –– Ω
t
d(on)
Turn-On Delay Time ––– 16 –––
t
r
Rise Time ––– 44 –––
t
d(off)
Turn-Off Delay Time ––– 55 –––
t
f
Fall Time –– 49 ––
C
iss
Input Capacitance ––– 1110 ––
C
oss
Output Capacitance ––– 230 –––
C
rss
Reverse Transfer Capacitance ––– 160 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 24 36 ns
Q
rr
Reverse Recovery Charge ––– 15 23 nC
Thermal Resistance
Parameter Units
R
θJL
Junction-to-Drain Lead
R
θJA
Junction-to-Ambient
mΩ
Conditions
See Figs. 20a &20b
Max.
100
-7.5
ƒ = 1.0MHz
V
GS
= 0V
V
DS
= -25V
V
DS
= -24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -20V, I
D
= -9.2A
V
DS
= V
GS
, I
D
= -25μA
V
GS
= -10V, I
D
= -9.2A
V
GS
= -4.5V, I
D
= -7.5A
μA
T
J
= 25°C, I
F
= -2.5A, V
DD
= -24V
di/dt = 100A/μs
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
I
D
= -7.5A
R
G
= 6.8Ω
V
DS
= -10V, I
D
= -7.5A
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
DD
= -15V, V
GS
= -4.5V
I
D
= -1.0A
V
DS
= -15V
V
GS
= -25V
V
GS
= 25V
V
GS
= -10V
ns
pF
–––
Typ.
–––
Static Drain-to-Source On-Resistance
A
––– ––
––– ––
-2.5
-75
μA
nC
°C/W
Max.
20
50
Typ.
–––
–––
\ntemohono‘ IE2RReCMfler
IRF9393PbF
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Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 110 100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
VGS
TOP -10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
BOTTOM -2.5V
60μs PULSE WIDTH
Tj = 150°C
-2.5V
1.0 2.0 3.0 4.0 5.0
-VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
VDS = -15V
60μs PULSE WIDTH
TJ = 25°C
TJ = 150°C
0.1 110 100
-VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
VGS
TOP -10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
BOTTOM -2.5V
60μs PULSE WIDTH
Tj = 25°C
-2.5V
0 8 16 24 32
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
-VGS, Gate-to-Source Voltage (V)
VDS= -24V
VDS= -15V
VDS= -6.0V
ID= -7.5A
110 100
-VDS, Drain-to-Source Voltage (V)
100
1000
10000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -9.2A
VGS = -10V
\memofiono‘ 122R Rechfier FEHA‘HON IN TH‘S A TA T1 : 15m: Notes. 1. Duly Factor D :11/«2 INGLE PULSE
IRF9393PbF
4www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
-VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
-ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
25 50 75 100 125 150
TA , Ambient Temperature (°C)
0
2
4
6
8
10
-ID, Drain Current (A)
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
-VGS(th), Gate threshold Voltage (V)
ID = -25μA
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
Thermal Response ( Z
thJA ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TA = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
DC
\ntemohono‘ IE2RReCMfler \ ”A // l / p w :{éu{ T T
IRF9393PbF
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Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current
Fig 16. Typical Power vs. Time
* Reverse Polarity of D.U.T for P-Channel
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
di/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
RGVDD
D.U.T *
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
10
20
30
40
50
60
RDS(on), Drain-to -Source On Resistance (m
Ω)
TJ = 125°C
TJ = 25°C
ID = -9.4A
010 20 30 40 50 60 70
-ID, Drain Current (A)
10
20
30
40
50
60
70
80
RDS(on), Drain-to -Source On Resistance (
mΩ)
VGS = -10V
VGS = -4.5V
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
60
120
180
240
300
360
420
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP -2.1A
-3.0A
BOTTOM -7.5A
1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Time (sec)
0
200
400
600
800
1000
Single Pulse Power (W)
\nfemofiono‘ 122R Rechfier 4.4 Hm; I <><—>~++u‘ v ngdr qu QgsZ 0g Fig 18a. Ga1e Charge Tes1Circun Fig 1311 Gene Charge Wave1orm Fig 19a. Unclamped |nduc1ive Tesx Circui1 Fig 19b- Undamped Inducvve Waveiorms T? E Fig 20a. Swixching Txme Tes1Circun Fig 2°11 Swi1ching Time Wave
IRF9393PbF
6www.irf.com
Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Fig 20b. Switching Time Waveforms
Fig 20a. Switching Time Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
1K
VCC
DUT
0
L
S
20K
S
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
15V
-20V
-VGS
VDS
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
tp
V
(
BR
)
DSS
I
AS
V
DS
90%
10%
V
GS
td(on) trtd(off) tf
TNemohono‘ IE2RReCMfler N MLLWETE RS [TNCHES] DECOUTUNE NSVOTZAA @ MENSION DOES NOT TNCLUDE MOLD PROTRUSTONS. D PROTRUSIONS NOT TO EXCEED D.T5 [ 006] [QT MENSION DOES NOT TNCLUDE MOLD PROTRUSTONS. D PROTRUSIONS NOT TO EXCEED 0.25 [010) MENSTON IS THE LENGTH OF LEADFO? SQDERINGTO UBSTRATE 80-8 Part Marking Information XANPLE‘ THIS IS ANIRF7101
IRF9393PbF
www.irf.com 7
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
SO-8 Package Outline(Mosfet & Fetky)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MIL L I ME T E R SINCHES
MIN MAX
DIM
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050] 8X 1.78
[
.070
]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
NOT E S :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROL L ING DIMENS ION: MIL LIMET E R
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A S UBS T RAT E.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
P = DISGNATES LEAD - FREE
EXAMPLE: T HIS IS AN IRF7101 (MOS F ET )
F7101
XXXX
INTERNATIONAL
LOGO
RECTIFIER
PART NUMBER
LOT CODE
PRODUCT (OPTIONAL)
DAT E CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
A = AS S E MB L Y S I T E CODE
tntemottonot 122R Rectttier International IézR Rectifier
IRF9393PbF
8www.irf.com
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/2010
Data and specifications subject to change without notice.
330.00
(12.992)
MAX.
14.4 0 ( .566 )
12.4 0 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
MSL1
(per JEDEC J-STD-020D
†††
)
RoHS Compliant
Qualification Information
Qualification level Consumer
††
(per JEDEC JESD47F
†††
guidelines)
Yes
Moisture Sensitivity Level SO-8

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