IRLZ24NSPbF, IRLZ24NLPbF Datasheet by Infineon Technologies

View All Related Products | Download PDF Datasheet
International IGBR Rectitier D@TC D@TC Tsm ch Junction-to-Case 33 Mounted,s(eady—sla19)"
IRLZ24NSPbF
IRLZ24NLPbF
HEXFET® Power MOSFET
PD - 95584
lAdvanced Process Technology
lSurface Mount (IRLZ24NS)
lLow-profile through-hole (IRLZ24NL)
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lLead-Free
Parameter Typ. Max. Units
RθJC Junction-to-Case 3.3
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** 40
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V18
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V13 A
IDM Pulsed Drain Current  72
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 68 mJ
IAR Avalanche Current11 A
EAR Repetitive Avalanche Energy4.5 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ24NL) is available for low-
profile applications.
Description
VDSS = 55V
RDS(on) = 0.06
ID = 18A
2
D Pak
TO-262
S
D
G
07/20/04
lLogic-Level Gate Drive
www.irf.com 1
Gale-lo-Source Forward Leakage eaten—Source Charge Tum-On Delay Trme Rrse Time Input Capacrnance Pulsed Source Currem Reverse Recovery Charge 130 200 no Internationcd IcaR Rectifier and center 0! are sumac!
IRLZ24NS/LPbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55   V VGS = 0V, ID = 250µA
V(BR)DSS/TJBreakdown Voltage Temp. Coefficient  0.061  V/°C Reference to 25°C, ID = 1mA
  0.060 VGS = 10V, ID = 11A
0.075 VGS = 5.0V, ID = 11A
  0.105 VGS = 4.0V, ID = 9.0A
VGS(th) Gate Threshold Voltage 1.0  2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 8.3   S VDS = 25V, ID = 11A
  25 VDS = 55V, VGS = 0V
  250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 nA VGS = 16V
Gate-to-Source Reverse Leakage   -100 VGS = -16V
QgTotal Gate Charge   15 ID = 11A
Qgs Gate-to-Source Charge 3.7 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge   8.5 VGS = 5.0V, See Fig. 6 and 13 
td(on) Turn-On Delay Time 7.1 VDD = 28V
trRise Time 74 ID = 11A
td(off) Turn-Off Delay Time  20  RG = 12Ω, VGS = 5.0V
tfFall Time 29 RD = 2.4Ω, See Fig. 10 
Between lead,
  and center of die contact
Ciss Input Capacitance 480 VGS = 0V
Coss Output Capacitance  130  pF VDS = 25V
Crss Reverse Transfer Capacitance  61   = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
RDS(on) Static Drain-to-Source On-Resistance
LSInternal Source Inductance 7.5
ns
IDSS Drain-to-Source Leakage Current µA
Parameter Min. Typ. Max. Units Conditions
I
SContinuous Source Current MOSFET symbol
(Body Diode)   showing the
ISM Pulsed Source Current integral reverse
(Body Diode)   p-n junction diode.
VSD Diode Forward Voltage   1.3 V TJ = 25°C, IS = 11A, VGS = 0V
trr Reverse Recovery Time  60 90 ns TJ = 25°C, IF = 11A
Qrr Reverse Recovery Charge  130 200 nC di/dt = 100A/µs 
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
S
D
G
A
18
72
Pulse width 300µs; duty cycle 2%.
Notes:
Uses IRLZ24N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD 11A, di/dt 290A/µs, VDD V(BR)DSS,
TJ 175°C
VDD = 25V, starting TJ = 25°C, L = 790µH
RG = 25, IAS = 11A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
movna'kmo‘ IEER Recflhe'
IRLZ24NS/LPbF
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
0.1
1
10
100
0.1 1 10 10
0
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
0.1
1
10
100
0.1 1 10 10
0
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 17C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
10
100
2345678910
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 15V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 18A
D
ntcrrwzlmma‘ IEZR Reflhe’
IRLZ24NS/LPbF
4www.irf.com
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
200
400
600
800
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
3
6
9
12
15
048121620
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
I = 11A
DS
DS
D
1
10
100
0.4 0.8 1.2 1.6 2.
0
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 17C
Single Pulse
C
J
movna'kmo‘ IEER Recflhe'
IRLZ24NS/LPbF
www.irf.com 5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
5.0V
+
-
VDD
0
4
8
12
16
20
25 50 75 100 125 150 17
5
C
I , Drain Current (Amps)
D
T , Case Temperature (°C)
A
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
Thermal Response (Z )
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
12
J
DM thJC
C
Fig 12b. Unclamped Inductive Wa ntcrrwzlmma‘ IEZR Reflhe’ L44444441
IRLZ24NS/LPbF
6www.irf.com
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
tp
V
DS
I
AS
VDD
V
(BR)DSS
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
QG
QGS QGD
V
G
Charge
10 V
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
0
20
40
60
80
100
120
140
25 50 75 100 125 150 17
5
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
V = 25V
I
TOP 4.5A
7.8A
BOTTOM 11A
DD
D
V
DS
L
D.U.T.
V
D
D
I
AS
t
p
0.01
R
G
+
-
5.0 V
Internationcd IEIR Recnfler n (4 PW
IRLZ24NS/LPbF
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* V
GS = 5V for Logic Level Devices
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Internationcd IcaR Rectifier s v wmsmNs N v o 5 muwzrtws mugs [ Mm L m m w W 3 A A at. o a: me ‘ya M o 27 ans w w m ua‘ : an am 035 A c m '153 m .m a a m u 7. u 5 m o «a ‘ u ‘ .n 3.5 055 m 5 :3 2 c a g 65 mm m m x n s 22 2.5 . 25‘ as: «an as: L n m ‘sfis 575 E25 n a ‘ as L755 M Q . 27 ‘ 7a osn am u uzs 55: mn air m <7 79="" m="" m="" m="" 35::="" a="" a="" n="" u="" u="" an="" i:="" .7="" 1="" as="" m="" n="" i="" a="" w=""><50 ‘01="" a="" '="" ‘="" 1w:="" "="" j="" m="" w="" m="" 2="" hummus="" w:="" w="" m="" wmuum="" [mm="" fl="" ,="" mm.="" a="" .="" :="" new="" mm="" m="" rusu="" m="" 'usu="" 5m="" w="" zxcmy="" w="" 1005‘}="" bree“="" 521::="" l?‘i:1‘"3““f="" $35131?="" w"="" "="" m="" w”="" rt="" marking="" informatio="" wam;="" ms="" ‘5="" m="" wsm="" wwh="" lortnuzmu="" assemeleddnwwanm="" m="" mussmau="" m:="" ‘l'="" m-="" mm="" mm="" v="" masmb‘y‘me="" %="" 24="" pusmunmdlums="" mama="" a="" u="" e="" %="" \/="" nwanza="" \="" an="" 2;="" we="" \/="">
IRLZ24NS/LPbF
8www.irf.com
D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in assembly line
pos ition indicates "Lead-F ree"
F530S
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
F530S
A = AS S EMB LY S IT E CODE
WEEK 02
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
RECTIFIER
INTERNATIONAL
LOGO
LOT CODE
ASSEMBLY YEAR 0 = 2000
DATE CODE
PART NUMBER
Internationcd IEIR Recnfler v D‘MIZNS‘UNS N M a a wwwm mm v o a L w m m MAX 5 A one on: ‘65 ‘90 M 201 ”2 050 Us [a am 099 020 019 m m use 023 015 . n: m “n (us 055 033 053 m5 L725 . a m 1m ms 055 c; on: us; an 02‘: n w 955 335 m. 3 m 533 2m 2 965 ms: 330 A20 3 c 2 so sac mu esc m M L v34s u 09 an 555 u 35-: 37v me As L2 ms :55 ,x A n mm m ‘7 EMF 1 , am i, 5:35? 2 , mummy: k MW 3 , [MHYER 1 “mm m 3mm w “mm: [mm 3 nutww a x n )n m mm m msx wanna M 5m (mm: mum TO-262 Part Marking Information EXAMPLE ms IS AN mumzL LOT cons 1m mu N UMBER :55:an om w 19‘ 1997 ”WWW“ chnrusx M mm m ms ASSEMELV um I ma \ V m we k, Mme ‘F‘Wnassemhlyhne n sq 9"“ “WE mm wmzates ‘Lead-Free' ASSEMELV / VEAR 7 = 1997 LDT (on: WEEK ‘9 m c pm N mm mmmam RECWIER mm ”’50 \mva ‘7 sq we cos: p nssueums mums ASSEMELV pRooucnopnomu mum: mm 7 z 1291 WEEK 19 A z ASSEMELV srrE (DDE www.irf.com
IRLZ24NS/LPbF
www.irf.com 9
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
AS S E MB L Y
LOT CODE
RECTIFIER
INTERNATIONAL
ASSEMBLED ON WW 19, 1997
Note: "P" in assembly line
pos ition indicates "L ead-F ree"
IN THE ASSEMBLY LINE "C" LOGO
THIS IS AN IRL3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
WEEK 19
YEAR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
PRODUCT (OPTIONAL)
P = DE S IGNAT E S LE AD-F REE
A = AS S EMB L Y S IT E CODE
WEEK 19
YEAR 7 = 1997
DATE CODE
OR
no Internationcd I01! Rectifier International IeR Rectifier
IRLZ24NS/LPbF
10 www.irf.com
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
F
EED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
F
EED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957
)
23.90 (.941
)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362
)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04

Products related to this Datasheet

MOSFET N-CH 55V 18A D2PAK
MOSFET N-CH 55V 18A D2PAK
MOSFET N-CH 55V 18A TO-262
MOSFET N-CH 55V 18A D2PAK
MOSFET N-CH 55V 18A D2PAK