DMN26D0UDJ Datasheet by Diodes Incorporated

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muss Q meow es [.I SOT963 ‘L EmPFDTBII'ED
DMN26D0UDJ
Document number: DS31481 Rev. 9 - 2
1 of 5
www.diodes.com
December 2014
© Diodes Incorporated
DMN26D0UDJ
NEW PROD UCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(on)
20V
3.0 @ VGS= 4.5V
6.0 @ VGS= 1.8V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Features
Dual N-Channel MOSFET
Low On-Resistance:
3.0@ 4.5V
4.0@ 2.5V
6.0@1.8V
10@1.5V
Very Low Gate Threshold Voltage, 1.05V Max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package
ESD Protected Gate (HBM 300V)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT963
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN26D0UDJ-7
SOT963
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information (Note 5)
Note: 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
SOT963
Top View
Top View
Schematic and Transistor Diagram
ESD PROTECTED
S1
D1
D2
S2
G1
G2
M1 = Product Type Marking Code
S1
D1
D2
S2
G1
G2
M1
WES DMN26DOUDJ
DMN26D0UDJ
Document number: DS31481 Rev. 9 - 2
2 of 5
www.diodes.com
December 2014
© Diodes Incorporated
DMN26D0UDJ
NEW PROD UCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
10
V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
240
190
mA
Continuous Drain Current (Note 6) VGS = 1.8V
Steady
State
TA = +25°C
TA = +70°C
ID
180
140
mA
Pulsed Drain Current - TP = 10µs
IDM
805
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
300
mW
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
409
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
20
V
VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current @ TJ = +25°C
@TJ = +85°C (Note 8)
IDSS
500
1.7
nA
µA
VDS = 20V, VGS = 0V
VDS = 2.6V, VGS = 0V
Gate-Body Leakage
IGSS
1
100
μA
nA
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.45
0.8
1.05
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
1.8
3.0
VGS = 4.5V, ID = 100mA

2.5
4.0
VGS = 2.5V, ID = 50mA

3.4
6.0
VGS = 1.8V, ID = 20mA

4.7
10.0
VGS = 1.5V, ID = 10mA

9.5
VGS = 1.2V, ID = 1mA
Forward Transconductance
|Yfs|
180
240
mS
VDS =10V, ID = 0.1A
Source-Drain Diode Forward Voltage
VSD
0.5
0.8
1.0
V
VGS = 0V, IS = 10mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
14.1
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
2.9
pF
Reverse Transfer Capacitance
Crss
1.6
pF
SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 8)
Turn-On Delay Time
td(on)
3.8
ns
VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0Ω
Rise Time
tr
7.9
Turn-Off Delay Time
td(off)
13.4
Fall Time
tf

15.2

Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout; pad layout as shown on Diodes Inc. suggested
pad layout document AP02001, which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design, not subject to production testing.
E112 DMN26DOUDJ \\
DMN26D0UDJ
Document number: DS31481 Rev. 9 - 2
3 of 5
www.diodes.com
December 2014
© Diodes Incorporated
DMN26D0UDJ
NEW PROD UCT
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.5 1 1.5 2 2.5 3
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8V
GS
V = 2.5V
GS
V = 1.5V
GS
0
0.1
0.2
0.3
0.4
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
AT = 85°C
A
T = 125°C
A
T = 150°C
A
V = -10V
DS
0
1
2
3
4
5
6
7
8
9
10
110 100 1,000
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (mA)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 1.2V
GS
V = 1.5V
GS
V = 2.5V
GS
V = 1.8V
GS
0
1
2
3
4
0.01 0.1 1
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 2.5V
I = 150mA
GS
D
V = 4.5V
I = 500mA
GS
D
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
R , DRAIN-SOURCE
ON-RESISTANCE ( )
DSON
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = 4.5V
I = 500mA
GS
D
V = 2.5V
I = 150mA
GS
D
// // DMN26DOUDJ
DMN26D0UDJ
Document number: DS31481 Rev. 9 - 2
4 of 5
www.diodes.com
December 2014
© Diodes Incorporated
DMN26D0UDJ
NEW PROD UCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 1mA
D
I = 250µA
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I , SOURCE CURRENT (A)
S
T = 25°C
A
0
5
10
15
20
0 5 10 15 20
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C, CAPACITANCE (pF)
Ciss
Crss
Coss
f = 1MHz
0 2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
0.1
10
100
1,000
10,000
I , LEAKAGE CURRENT (nA)
DSS
1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
SOT963
Dim
Min
Max
Typ
A
0.40
0.50
0.45
A1
0
0.05
-
c
0.120
0.180
0.150
D
0.95
1.05
1.00
E
0.95
1.05
1.00
E1
0.75
0.85
0.80
L
0.05
0.15
0.10
b
0.10
0.20
0.15
e
0.35 Typ
e1
0.70 Typ
All Dimensions in mm
L
c
E
D
e1
e
E1
b (6 places)
A
A1
I++I++I T+ + +
DMN26D0UDJ
Document number: DS31481 Rev. 9 - 2
5 of 5
www.diodes.com
December 2014
© Diodes Incorporated
DMN26D0UDJ
NEW PROD UCT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
Dimensions
Value (in mm)
C
0.350
X
0.200
Y
0.200
Y1
1.100
Y1
Y (6X)
CC
X (6X)

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