IRL2505PbF Datasheet by Infineon Technologies

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International IGBR Rectitier Stora e Tern rature Ra
IRL2505PbF
HEXFET® Power MOSFET
lAdvanced Process Technology
lUltra Low On-Resistance
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 is universally preferred for all commercial-
Industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
VDSS = 55V
RDS(on) = 0.008
ID = 104A
S
D
G
lLogic-Level Gate Drive
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 104
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74 A
IDM Pulsed Drain Current 360
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy500 mJ
IAR Avalanche Current 54 A
EAR Repetitive Avalanche Energy20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and 55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Thermal Resistance
––– 62
RθJA Juction-to-Ambient
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
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8/3/04
PD -95622
lLead-Free
Internationcd IcaR Rectifier Gam-m-Source Forward Leakage Gama—Source Charge Tum-On De‘ay Time Risenme and center 0' we Comacl \npm Capackance Source-Drain Ratings and Characteristics Parameter Min. fl '\ Pulsed Source Currem Q9; a Reverse Recovery Charge — 650 970 nC
IRL2505PbF
2www.irf.com
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55   V VGS = 0V, ID = 250µA
V(BR)DSS/TJBreakdown Voltage Temp. Coefficient  0.035  V/°C Reference to 25°C, ID = 1mA
  0.008 VGS = 10V, ID = 54A
0.010 VGS = 5.0V, ID = 54A
  0.013 VGS = 4.0V, ID = 45A
VGS(th) Gate Threshold Voltage 1.0  2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 59   S VDS = 25V, ID = 54A
  25 VDS = 55V, VGS = 0V
  250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 nA VGS = 16V
Gate-to-Source Reverse Leakage   -100 VGS = -16V
QgTotal Gate Charge   130 ID = 54A
Qgs Gate-to-Source Charge 25 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge   67 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time 12 VDD = 28V
trRise Time 160 ID = 54A
td(off) Turn-Off Delay Time  43  RG = 1.3Ω, VGS = 5.0V
tfFall Time 84 RD = 0.50Ω, See Fig. 10
Between lead,
  and center of die contact
Ciss Input Capacitance 5000  VGS = 0V
Coss Output Capacitance  1100  pF VDS = 25V
Crss Reverse Transfer Capacitance  390  = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
RDS(on) Static Drain-to-Source On-Resistance
LSInternal Source Inductance 7.5
ns
IDSS Drain-to-Source Leakage Current µA
Parameter Min. Typ. Max. Units Conditions
I
SContinuous Source Current MOSFET symbol
(Body Diode)   showing the
ISM Pulsed Source Current integral reverse
(Body Diode)   p-n junction diode.
VSD Diode Forward Voltage   1.3 V TJ = 25°C, IS = 54A, VGS = 0V
trr Reverse Recovery Time  140 210 ns TJ = 25°C, IF = 54A
Qrr Reverse Recovery Charge  650 970 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
S
D
G
A
104
360
Pulse width 300µs; duty cycle 2%.
Notes:
ISD 54A, di/dt 230A/µs, VDD V(BR)DSS,
TJ 175°C
VDD = 25V, starting TJ = 25°C, L = 240µH
RG = 25, IAS = 54A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
IGSS
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IRL2505PbF
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Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
1
10
100
1000
2.5 3.5 4.5 5.5 6.5 7.5
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 25V
20µs PULSE WIDTH
DS
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
5V
90A
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IRL2505PbF
4www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
2000
4000
6000
8000
10000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
3
6
9
12
15
0 40 80 120 160 200
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 54A
V = 44V
V = 28V
D
DS
DS
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4 2.8
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
T = 25°C
T = 175°C
Single Pulse
C
J
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IRL2505PbF
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Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Pulse Width 1 µs
Duty Factor 0.1 %
VGS
RG
D.U.T.
5.0V
+
-
VDD
25 50 75 100 125 150 175
0
20
40
60
80
100
120
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 12b. Unclamped Inducflve Wa ntcrrwzlmma‘ IEZR Reflhe’
IRL2505PbF
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Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
V
DS
L
D.U.T.
V
DD
I
AS
t
p
0.01
R
G
+
-
tp
VDS
IAS
VDD
V(BR)DSS
5.0 V
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
QG
QGS QGD
VG
Charge
5.0 V
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
0
200
400
600
800
1000
1200
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
V = 25V
I
TOP 22A
38A
BOTTOM 54A
DD
D
Internationcd IEIR Recnfler n (4 PW
IRL2505PbF
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Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* V
GS = 5V for Logic Level Devices
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Internottonot IcaR Rectifier L? / \ International IGER Rectifier
IRL2505PbF
8www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market
Qualification Standards can be found on IR’s Web site.
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDE C OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD ASSIGNMENTS
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASSEMBLY LINE "C"
T HIS IS AN IRF 1010
LOT CODE 1789
AS S E MBLE D ON WW 19, 1997 PART NUMBER
AS S E MB L Y
LOT CODE
DATE CODE
YEAR 7 = 1997
LINE C
WEEK 19
LOGO
R E CT IF IE R
INT E RNAT IONAL
Note: "P" in assembly line
position indicates "Lead-Free"
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

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