IPx320N20N3 G Datasheet by Infineon Technologies

View All Related Products | Download PDF Datasheet
T IP I n I n 60 n OptiMOSWS Power-Transistor Frodu Features VDs 200 - N-channel, normal level I? 32 DS(un).max - Excellent gate charge x RDSM) product (FOM) l 34 o - Very low tan-resistance Hwy.) - 175 ”C operating temperature RoHS - Pb-lree lead platlng; RoHS compliant ‘/ - Qualified according to JEDEC” for target applicatlon - Halogen-free according to IE061249-2-2‘l «E Halogen-Free - Ideal for high-frequency switchlng and synchronous rectification Type IPB320N20N3 G IPP320N20N3 G IP|320 dram pm 2 gate 1 leam pm i a Package PG-T0263-3 PG-T0220-3 PG-TO SOLII’CB Marking 320N20N 320N20N pm 3 Maximum ratings, at T‘:25 “C, unless othen/vise specilled Parameter Symbol Conditions Value Unit Continuous draln current In Tc:25 6C 34 A TC:100 ”C 22 Pulsed draln currenizl ID pulse T625 °C 136 Avalanche energy, slngle pulse Eas ID:34 A, FIGS:25 (l 190 ml Reverse dlode dv/dl‘ dv/dt 10 kV/us Gate source voltage VGS :20 v Power disslpation P‘m T525 “C 136 w Operating and storage temperature T‘. T5,,g -55 175 “C IEC cllmatlc category: DIN IEC 68-1 55/175/56 ”.l-smzo and £5022 1’ See figure 3
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C 34 A
TC=100 °C 22
Pulsed drain current2) ID,pulse TC=25 °C 136
Avalanche energy, single pulse EAS ID=34 A, RGS=25 Ω190 mJ
Reverse diode dv/dtdv/dt10 kV/µs
Gate source voltage VGS ±20 V
Power dissipation Ptot TC=25 °C 136 W
Operating and storage temperature Tj, Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
2) See figure 3
Value
1)J-STD20 and JESD22
VDS 200 V
RDS(on),max 32 mΩ
ID34 A
Product Summary
Type IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G
Package PG-TO263-3 PG-TO220-3 PG-TO262-3
Marking 320N20N 320N20N 320N20N
Rev. 2.3 page 1 2011-05-20
./_ Inflneon
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.1 K/W
RthJA minimal footprint - - 62
6 cm2 cooling area3) --40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 200 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=90 µA 234
Zero gate voltage drain current IDSS
VDS=160 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=160 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=34 A -2832
mΩ
Gate resistance RG- 2.5 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=34 A 27 54 - S
Values
Thermal resistance, junction -
ambient
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3 page 2 2011-05-20
./_ Inflneon
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 1770 2350 pF
Output capacitance Coss - 135 180
Reverse transfer capacitance Crss -4-
Turn-on delay time td(on) -11-ns
Rise time tr-9-
Turn-off delay time td(off) -21-
Fall time tf-4-
Gate Char
g
e Characteristics4)
Gate to source charge Qgs -8-nC
Gate to drain charge Qgd -3-
Switching charge Qsw -5-
Gate charge total Qg-2229
Gate plateau voltage Vplateau - 4.4 - V
Output charge Qoss VDD=100 V, VGS=0 V -5472nC
Reverse Diode
Diode continous forward current IS- - 34 A
Diode pulse current IS,pulse - - 136
Diode forward voltage VSD
VGS=0 V, IF=34 A,
Tj=25 °C - 0.9 1.2 V
Reverse recovery time trr - 110 - ns
Reverse recovery charge Qrr - 500 - nC
4) See figure 16 for gate charge parameter definition
VR=100 V, IF=17 A,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=100 V,
VGS=10 V, ID=17 A,
RG=1.6 Ω
VDD=100 V, ID=17 A,
VGS=0 to 10 V
Rev. 2.3 page 3 2011-05-20
@neon
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
100
10-1
10-2
tp [s]
ZthJC [K/W]
0
20
40
60
80
100
120
140
160
0 50 100 150 200
TC [°C]
Ptot [W]
0
10
20
30
40
0 50 100 150 200
TC [°C]
ID [A]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
103
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID [A]
Rev. 2.3 page 4 2011-05-20
\\
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V
5 V
7 V
10 V
0
10
20
30
40
50
60
0 10203040506070
ID [A]
RDS(on) [mΩ]
25 °C
175 °C
0
10
20
30
40
50
02468
VGS [V]
ID [A]
0
10
20
30
40
50
60
70
80
0255075
ID [A]
gfs [S]
4.5 V
5 V
7 V
10 V
0
10
20
30
40
50
60
012345
VDS [V]
ID [A]
Rev. 2.3 page 5 2011-05-20
\ fl F
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=34 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98%
0
20
40
60
80
100
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
90 µA
900 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
101
102
103
104
0 40 80 120 160
VDS [V]
C [pF]
25 °C
175 °C
25°C, 98%
175°C, 98%
103
102
101
100
0 0.5 1 1.5 2
VSD [V]
IF [A]
Rev. 2.3 page 6 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=17 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
40 V
100 V
160 V
0
2
4
6
8
10
0 5 10 15 20 25
Qgate [nC]
VGS [V]
180
190
200
210
220
230
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
1
10
100
1 10 100 1000
tAV [µs]
IAS [A]
Rev. 2.3 page 7 2011-05-20
/' Inflneon a v mu MILLMEYERS memes Mm MAX MIN MAX DOCUMENY no. A 4.30 «57 0.159 men 18900008318 AI 1 n 1 m Elma 0.055 A2 2.15 2 72 was mm SCALE 0 a n.65 0.35 0.026 mm m a as 1 «1 mm moss I12 u 95 1 15 0.037 mm m n as 1 m maze H.045 : n as o 50 mm 1102A n u 31 15 as n 553 a 523 m 351 915 was 0372 m 1719 131a 0430 asn s s m 10.35 0.352 was a a 5a a m u 255 u an e 2 54 on no :1 5 on 0.20:: " 3 3 IssuE on: m s an a so 0.232 mm 23.0.4007 L non uou D512 0551 L1 . Am , may REVIS'GN .p 3.50 3.39 mm: msa "5 a 2 sn 3 on u m2 0 1 1a
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
PG-TO220-3: Outline
Rev. 2.3 page 8 2011-05-20
" Inflneon FOOTPRINT L m" MILLIMEIERS mans: MIN MAX MIN MAX A 1 m 4 57 u 1 so mm A1 a on 0.25 a 000 mm) b 0.55 0 35 n 025 mm nacquNr NO. b2 0 as 1 1s a 037 0045 msmoozam c o 3: o 55 u on 0026 1.17 140 a 013 0055 so»: fl 8151 9 15 a ass 0372 7 1n 7 no a 2w 9 311 9 an m :11 n 3315 0405 n 5 55. m u 255 one 1 § 2 54 0.100 5.98 0.2qu 7 5"“ Z 2 EUROPEAN vacuum" 14 51 1 m u 575 u625 2,2» am new ans 0 7n 1 sq n 015 u on: 1.00 1 vs u ass a 070 \6 n5 16.25 a 632 o 640 9-5" 590 n w; w" IssuE on: 1 5n 4 m u 177 0155 30.08.30“, 1070, men um (my lap : g q u. n 152 “mm" 1 25 as u 019 a 057 0‘
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
PG-TO263-3: Outline
Rev. 2.3 page 9 2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
PG-TO262-3: Outline
Rev. 2.3 page 10 2011-05-20
.f. Inflneon www mnneon.com
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.3 page 11 2011-05-20

Products related to this Datasheet

MOSFET N-CH 200V 34A TO263-3
MOSFET N-CH 200V 34A TO263-3
MOSFET N-CH 200V 34A TO220-3
MOSFET N-CH 200V 34A TO263-3
MOSFET N-CH 200V 34A TO262-3