IRFR/U1205PbF Datasheet by Infineon Technologies

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International IGER Rectifier Ultra Low On-Resistance Surface Mount (IRFR1205) Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated Description Fiftn Generation HEXFEI'sfrom International Rectifier utilize advanced processing techniquesto achieve the lowest possible on—resistance per silicon area This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFEl's are Well known for, provides the designer with an extremely efficient device for use in a wide variety or applications. The D-PAK is designed for surraoe mounting using vapor phase infrared or wave soldering techniques The straight lead Version (lRFU series) is for through- hole mounting applications Power dlsslpatlorl levels up to 1 5 watts are possible in typioai surrace mount applications Absolute Maximum Ratings H EXFET® Power MOS FET D VDss = 55v RDSwm = 0.0279 ID = 44A® R D-PAK TO-ZSZAA l-PAK TD-Zit AA Parameter Max. Units lD @ Tc = 25°C Continuous Drain Current v55 @10V 446) ID @ TC =100"C Continuous Drain Current V65 @ 10V 31® IBM Pulsed Drain Current 0(2) 160 PD @T0 = 25"C Power Dissipation 107 Linear Deraling Factor 0,71 W/“C V95 Gate-toSource Voltage 120 Egg Single Pulse Avalanche Energy®® 2i0 niJ IAR Avalanche Current®® 25 Em Repelilive Aimianctie Energy®® ‘li rnJ dvldt Peak Diode Recovery fluid! {3) 50 V/ns TJ Operating Junction and Terr; Eiorage Temperature Range -55 to + i75 Soldering Tempera|urei ror 10 seconds 300 ii 6mm lroin case i “C Thermal Resistance Parameter Max. Units Rex Junctim-tocase 1.4 l2BJA Juncliorl-to-Amtiienl (PCB mounl) « 50 Ron JuncllorlsloAleenl 110 "CNV
IRFR/U1205PbF
PD - 95600A
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12/9/04
Lead-Free
International Ion Rectifier Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions ViERDss Drain-toSource Breakdown Voltage 55 — v v65 : 0v. ID = 25mm avaansyan Breakdown Voltage Temp, Coemclent — 0,055 — V/“C Reference to 25°C. ID = 1mA Rosimi static Drain-toSource (Xi-Resistance i i u 027 10v. ID veslm Cate Threshold Voltage 2 o — 4 a v vDS _ i/GS lD _ gg Forward Transconduclance 17 — —— 5 25V lD — — 25 v93 = 55v. Veg = W “’55 mmwme Leakage current i i 250 “A Vo 44v. Voc = 0V. Tu = 150°C less CatetoSource Forward Leakage — — ice "A v65 : 20v CatetoSource Reverse Leakage — .100 -20v 0; Total Gate Charge — — e5 — 25A 095 Gatetosource Cii arge i 12 nC 44v 0gd eatetoDrain (“Miller") Charge — —— 27 10v, See Fig 5 and 13 @172 ta an Turn-0n Delay Time — 1.3 —— 25v ti Rise Time 7 69 i "S to 25A tuioiii Turnaoff Delay Time 7 47 77 Re 1711 t. Fall Time 60 Rn =1 1Q,See Fig 10 (m Between lead. a Lo internal Drain inductance i 4 5 i nH emm (“5an from package 0 "s New “we '"dumm i 75 i and center oldie colilactGl e Cg; input Capacitance — 1300 V55 = W Coss output Capacitance 7 410 pF 25v Ca; Reverse Transier Capacitance 7 150 *7 DMHz. see Fig. 5c) Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. units Conditions I: Continuous Source Current ,7 W 44rd MOSFET symbol a (Body Diode) A snowmg tne lSM Pulsed Source Cunent integral reverse a (Body Diode) mm '_ _' 16° p—n Juncllon diode. 3 Von Diode Forward Voltage —— 1 3 v Tu : 25“C. Is = 2A. Vos = 0v (9 c, Reverse Recovery Time as 95 ns TJ : 25°C, I; :25A on Reverse Recoverycnarge 150 24a nC di/dt = 1ooA/us (m to" Forward Tu m-On Time intrinsic tum-on time is negligible (turnva is dominated by L5+ LD) Mates: (D Repetitive rating: pulse width limited by max junction temperature (See fig 11; (D Van: 25V. R9 - 25o. IAS = 25A (see Figure 12) <3) lsd="" g="" 25a.="" di/dt="" g="" aztwus.="" vdd="" s="" vigwss.="" tu:="" 175“c="" starting="" tu="25°C." l="470w" g)="" pulse="" width="" ssoous:="" duty="" cycles="" 2%="" (52="" calculated="" continuous="" current="" based="" on="" maximum="" allowable="" juncllon="" temperature.="" package="" limitation="" current="20A" ©="" this="" is="" applied="" ior="" erak.="" ls="" o1="" dvpak="" is="" measured="" between="" lead="" and="" center="" of="" die="" contact="" (7)="" uses="" irfzmn="" data="" and="" test="" conditions="" “="" wrien="" mounted="" on="" 1"="" square="" pcb="" (fr-t="" or="" 6-10="" material)="" for="" recommended="" footprint="" and="" soldering="" lechnlques="" reier="" to="" application="" note="" “new="">
IRFR/U1205PbF
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Internationcd Ion Rectifier mun uw Innou Aw mu -Source Current {A} a _'e. mu: PULSE WIDYH ‘ T = 25'!) n ‘ { m mu VDS‘ Dram-Io-souree Voltage N) Fig 1. Typwca‘ Output Characteristics man 5 E 3 m o 3 3 1/: Vns= 25v ‘ 20 SPULSEWIDTH ‘ 5 a 7 a s w Ves , Gate-to-Source Voltage (v. Fig 3. Typica‘ Transfer Characteristics w Dem), DrameSnurce On Reswslance um uw "mm m «an 3 E o ‘3 a nu; puss mm 1 1 = 175°C av , m vD5 , Dram-(o-Sowce Voltage 4V) mu Fly 2. Typwca‘ Outpm Characteristics 25 2a (Normalized) n5 v nu ,nn 4n an a 7n 4n n : WV an mu an un en mu 14 Junction Temperalure(“C) Fig 4. Normahzed On-Reswslanoe Vs Temperature
IRFR/U1205PbF
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zsnu v‘ I- IMHI cg; o can, ca; SHORTED can mu 9 '0 3 3 law % man 0 6 sun n l W mu Vns , DrainrlurSource Voltage (V) 5. Typlcal Capacltance Vs Draln-to-Souroe Voltage wan E a me E 1 : 115% :3 § ; m E: _w ‘ VGS : "V as lfl l5 2n 25 In vSD ,Sonrce-lo-Dram Voltage (V) Fig 7. Typical SourcerDraIn Diode Forward Voltage ID,Drain erenl(A) Inlernolionol Ion Recllller VG s , Gale-ta-Snurce anlage w) FOR T551 cIRcuw SEE FlGURE 11 mm 2n an an in en la 05.Tola|GaleCharge(nCl Fig 5. Typical Gate Charge Vs Gale-(o-Source Voltage lllull OPERATION m THlS AREALlMlTED av Roslonl «an l m lnn Vns ‘ Dralnrlflrswrce Vollage (V) Fig 8. Maxlmum Safe Operatlng Area
IRFR/U1205PbF
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Internationcd Ion Rectifier RD LIMITED BY PACKAGE V05 > 1 V V V D U T - L ‘3 ’ Von E j j 5 UV 0 Puwsewmhilus g DulyFacmv 5m 95 E g a :5 25 so 75 mm 125 15m 115 TE. Case Temperature (”0) Fig 5. Maximum Drain Current vs |on ‘r (a ( Case Temperature “I I am r Fig 10b. swtcnmg Trme Wavefurms «a 9 t1, 1 a) .n e o a w a) D: e m . a smegma: ‘l g5 (new mForsE) «2 NM“: 1.DIlyflcborD= Min 2 mmfipwx zWE 415 o m a mom nmm um am (1, Rectangular Pu‘se Duration (sec) 01 Fig 11. Maximum Effective Transwent Thermal \mpedanoe‘ Junctwonetoecase
IRFR/U1205PbF
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lAse 7; Fig 12!). Unclamped Inductlve Waveforms 5.0 V Charge 4. Fig 13a. Basic Gate Charge Waveform EAS‘ Slngle Pu‘se Avalanche Enargy (mJ) Internationcd Ion Rectifier In op IVA 13A m ovum 25A mu V =25\I 25 5a 75 mu us mi 175 Smrllng TJ . Junnlan Temperature we) I] Fig12c. Maxwmum Avalanche Energy Vs Drain Current Current Ream: k; In Currant eamvhng ansmvs Fig 13b. Gate Charge Test Circuit
IRFR/U1205PbF
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Internationcd Ion Rectifier T (3) PW f \ T J J W 4 \/’*~{yw¢wi/i‘i‘
IRFR/U1205PbF
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Peak Diode Recovery dv/dt Test Circuit
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N Channel HEXFETS
Internationcd Ion Rectifier m m mumsmmun m mm Pm nu: ma Mr Hat m mm m m w mm [Wm] M mm mm» w is m mm m m H mm A mww Wm mom m WW w 7 ~>E - so mmmmmwmmmcw magnum WNW V” 1 mnmwmwmwnw ,3 m .‘ e0 WWW:mmmmmw Mamnmsnmwmixczin ,7 ‘ V nus-mnpsz Mtitnwiuswwsw:uwnwrmtwvfiww (mm: a M mm mm ) H u ‘0 wuwimrwsmlintcmwimrzszu H, H1” A) .. 4” 4L1” "m. A mm WNW: swam MW u. m m w m, . w n. m a). s [m mm .1 m m m K m. cm ml up 5 "WV- :1 rm rm m: m s 7 ' DRAM n m an on an s J’swvct [v n m m m m I ‘ WW j k ‘ n : m , . 7, U l w m . M H n, . mm mm W mm a m “mm L » , l m Hm u M, W h mm (BAH/HIV \ \ "Wm-x n mm: mun: D-Pak (TO—252AA) Part Marking Information MERNMIONAL - mm 1234 mm mmnommm m, wmsswmm mmmammmm ASSEMBLY I I .mymm- mm OR LOGO ASSEMBLY LDTCODE
IRFR/U1205PbF
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D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
12
IN THE ASSEMBLY LINE "A"
ASSEMBLED ON WW 16, 1999
EXAMPLE: WITH ASSEMBLY
THIS IS AN IRFR120
LOT CODE 1234
YEAR 9 = 199
9
DATE CODE
WEE K 16
PART NUMBER
LOGO
INTERNATIONAL
RECTIFIER
ASSEMBLY
LOT CODE
916A
IRFU120
34
YEAR 9 = 1999
DATE CODE
OR
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
Note: "P" in assembly line position
indicates "Lead-Free"
12 34
WEEK 16
A = ASSEMBLY SITE CODE
PART NUMBER
IRFU120
LINE A
LOGO
LOT CODE
AS S E MB L Y
INTERNATIONAL
RECTIFIER
Internationcd Ion Rectifier V Wmsonwc AND mammws PER ma v ‘5 w ma, 2 w NS m: SHDWV w muwzvms [\ACHES] 3 DwmmoN n a E on NOT \NCLUDE MOLD msu MOLD 'AAsu emu w mm] was mm: m 305 wsz uwmans AR: msmu AI ma umwusr 5mm: nF ma msnc sum mm“ m: Lamaun OPHON WWW ummsm bt‘ L2. :1 a m LEAD uwmsmn uucomnanu w L} a 5 A Dwmsm m :73 mm m gas: METAL ow. 7 a 0mm, cmmws m JEDEE L‘UVUNE mrzsua CON'ROLUNC wiwov wms [IWENS‘CNS swam, AAAAAAEAEAA Am MU AAA Aw AAA AAA Am A, m A m m AAA 2 WAN AA AA» m 3* mm a nu: nnzs ans ‘ ’ ”MW AA AAA. m AA AAA nnw AAAA N 5AA mes m A A m WA AA AAA Am HAS A A m , mos , A A m 0250 Am A A Aim “"‘T a , m , A y 7 . AAA mm ,c,’ a A ”A 95: Am m \ J A AAA AAA m 0090 L AA AAA N? Am m A AA A3 AA AAA mus mu 5 .A A A5 A A9 "A l—Pak (TO-251AA) Part Marking Information mm: ms Asm wuun wrm ASSEMBLY ‘fim’l‘g‘u - Amman; 9575 um Assmaumm mm 1999 M m ASSEMBLY UNE w ASSEMBLY Am can: mmmnu - mum Lose ASSENELV LOT (on: www.irf.com 9
IRFR/U1205PbF
www.irf.com 9
I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
AS S E MB L Y
EXAMPLE: WITH ASSEMBLY
THIS IS AN IRFU120
YEAR 9 = 199
9
DATE CODE
LINE A
WEEK 19
IN THE ASSEMBLY LINE "A"
ASSEMBLED ON WW 19, 1999
LOT CODE 5678
PART NUMBER
56
IRFU120
INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
919A
78
Note: "P" in assembly line
pos ition indicates "Lead-F ree"
OR
56 78
AS S E MB LY
LOT CODE
RECTIFIER
LOGO
INTERNATIONAL
IRFU120
PART NUMBER
WEEK 19
DATE CODE
YEAR 9 = 1999
A = ASSEMBLY SITE CODE
P = DES IGNAT E S LE AD-F REE
PRODUCT (OPTIONAL)
International IeR Rectifier
IRFR/U1205PbF
10 www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641
)
15.7 ( .619
)
TRR TRL
N
OTES :
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
http://www.irf.com/package/
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

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