IRF7842PbF Datasheet by Infineon Technologies

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International ‘IflR Rectifier {O Hfikk tandard Pack Absolute Maximum Ratin s Conlinuous Drain Currenl, V @ 10V Putsed Drain Current cwer Sstpatlcn Power Dlssipaflcn Linear Deratin Faclor Thermal Resistance JunclionrlorDrain Lead (5) JunctionrlcrAmbient @G)
HEXFET® Power MOSFET
Notes through are on page 10
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
SO-8
Benefits
lVery Low RDS(on) at 4.5V VGS
lLow Gate Charge
lFully Characterized Avalanche Voltage
and Current
Applications
lSynchronous MOSFET for Notebook
Processor Power
lSecondary Synchronous Rectification
for Isolated DC-DC Converters
lSynchronous Fet for Non-Isolated
DC-DC Converters
lLead-Free
VDSS RDS(on) max Qg (typ.)
40V 5.0m @VGS = 10V 33nC
Absolute Maximum Ratings
Parameter Units
VDS Drain-to-Source Voltage V
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, V
GS
@ 10V
A
IDM
Pulsed Drain Current
PD @TA = 25°C
Power Dissipation
W
PD @TA = 70°C
Power Dissipation
Linear Derating Factor W/°C
TJ Operating Junction and °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJL
Junction-to-Drain Lead
––– 20 °C/W
RθJA
––– 50
-55 to + 150
2.5
0.02
1.6
Max.
18
14
140
± 20
40
IRF7842PbF
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Form Quantity
Tube/Bulk 95 IRF7842PbF
Tape and Reel 4000 IRF7842TRPbF
Package Type
Standard Pack
Orderable Part Number
IRF7842PbF SO-8
Base Part Number
IEBR Parameter . Max. Units camuons Avalanche Characteristics Parameter Typ. Max. Unlls AS rm 0 Diode Chavacledsum . Max. Units camuons A shnwmg me n unclmn mode, T or L or IF (3)
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IRF7842PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 4.0 5.0 mΩ
––– 4.7 5.9
V
GS(th)
Gate Threshold Voltage 1.35 ––– 2.25 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– - 5.6 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– –– 100 nA
Gate-to-Source Reverse Leakage ––– –– -100
gfs Forward Transconductance 81 ––– ––– S
Q
g
Total Gate Charge ––– 33 50
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 9.6 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 2.8 ––– nC
Q
gd
Gate-to-Drain Charge ––– 10 –––
Q
godr
Gate Charge Overdrive ––– 10.6 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 12.8 –––
Q
oss
Output Charge ––– 18 ––– nC
R
G
Gate Resistance ––– 1.3 2.6 Ω
t
d(on)
Turn-On Delay Time ––– 14 –––
t
r
Rise Time ––– 12 –––
t
d(off)
Turn-Off Delay Time ––– 21 ––– ns
t
f
Fall Time ––– 5.0 –––
C
iss
Input Capacitance ––– 4500 –––
C
oss
Output Capacitance ––– 680 ––– pF
C
rss
Reverse Transfer Capacitance ––– 310 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 3.1
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 140
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 99 150 ns
Q
rr
Reverse Recovery Charge ––– 11 17 nC
–––
I
D
= 14A
V
GS
= 0V
V
DS
= 20V
V
GS
= 4.5V, I
D
= 14A
V
GS
= 4.5V
Typ.
–––
V
DS
= V
GS
, I
D
= 250μA
Clamped Inductive Load
V
DS
= 20V, I
D
= 14A
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 32V, V
GS
= 0V
T
J
= 25°C, I
F
= 14A, V
DD
= 20V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 17A
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 4.5V
I
D
= 14A
V
DS
= 20V
Conditions
Max.
50
14
ƒ = 1.0MHz
IEBR s 60p: PUL
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IRF7842PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
60μs PULSE WIDTH
Tj = 25°C
2.5V
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
BOTTOM 2.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
60μs PULSE WIDTH
Tj = 150°C
2.5V
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
BOTTOM 2.5V
1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ID, Drain-to-Source Current (Α)
VDS = 25V
60μs PULSE WIDTH
TJ = 25°C
TJ = 150°C
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 18A
VGS = 10V
IEBR Dv'a PERATION \N THIS Tc : 25‘s 17 :150’0
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IRF7842PbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 20406080
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS= 30V
VDS= 20V
ID= 14A
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0 1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
IEBR INGLE PULSE FEW??? T w , \ mes. . Duly Factor D : m2
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IRF7842PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
25 50 75 100 125 150
TJ , Junction Temperature (°C)
0
2
4
6
8
10
12
14
16
18
ID , Drain Current (A)
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.4
0.8
1.2
1.6
2.0
2.4
VGS(th) Gate threshold Voltage (V)
ID = 250μA
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
100
Thermal Response ( Z thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W) τi (sec)
10.48 0.138167
26.83 1.8582
12.69 44.8
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
IEBR _
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
IRF7842PbF
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)
trtf
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
VDD
VDS
LD
D.U.T
+
-
Fig 13b. Unclamped Inductive Waveforms
Fig 13a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 12. On-Resistance Vs. Gate Voltage
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
0
4
8
12
16
RDS(on), Drain-to -Source On Resistance (mΩ)
TJ = 25°C
TJ = 125°C
ID = 18A
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
0
40
80
120
160
200
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 6.7A
7.5A
BOTTOM 14A
T T h ffi
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
IRF7842PbF
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 16. Gate Charge Test Circuit
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Fig 17. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
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IRF7842PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
1.27 B AS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MI N MAX
MILLIMETERSINCHES
MI N MAX
DIM
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 B AS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L INE CONF OR MS T O J E DE C OU T L INE MS -012AA.
NOT ES :
1. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994.
2. CONT R OLLING DIMENS ION: MILLIME T E R
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIME NS ION DOES NOT INCLUDE MOLD PR OT R US IONS.
6 DIME NS ION DOES NOT INCLUDE MOLD PR OT R US IONS.
MOLD PROT RU S IONS NOT TO EXCEE D 0.25 [.010].
7 DIME NS ION IS T HE LE NGT H OF LE AD FOR S OLDER ING T O
A S UBS T RAT E.
MOLD PROT RU S IONS NOT TO EXCEE D 0.15 [.006].
8X 1.78 [.070]
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECT IFIER
LOGO
F 7101
Y = LAS T DIGIT OF T HE YE AR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
IRF7842PbF
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IEBR Ouallflcallon lMormallon Comm (pa JEDECJVSTDVOZOD ) NSLt RoHS Con‘ptiant Yes International IEBR Rectitier
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
IRF7842PbF
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.5mH
RG = 25Ω, IAS = 14A.
Pulse width 400μs; duty cycle 2%.
When mounted on 1 inch square copper board
Rθ is measured at TJ approximately 90°C
MS L 1
(per JE DE C
J-S T D-020D
††
)
RoHS compliant
Yes
Qualification information
Qualification level
Cons umer
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level SO-8
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Revision History
Date Comment
Updated data sheet based on corporate template.
Added Qual level on page10.
Added ordering information on page1
Updated Max RG from "TBD" to "2.6Ohm" on page2.
7/8/2014

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