IRF1010EZ (S,L) PbF Datasheet by Infineon Technologies

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tnternottonol IEER Rectitter 300 1 6mmlrom case 10lbf-tn LtN-m Thermal Resistance
07/06/10
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HEXFET® is a registered trademark of International Rectifier.
IRF1010EZPbF
IRF1010EZSPbF
IRF1010EZLPbF
HEXFET® Power MOSFET
S
D
G
VDSS = 60V
RDS(on) = 8.5m
ID = 75A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications. D2Pak
IRF1010EZSPbF
TO-220AB
IRF1010EZPbF
TO-262
IRF1010EZLPbF
Absolute Maximum Ratings
Parameter Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A
ID @ TC = 10C Continuous Drain Current, VGS @ 10V (See Fig. 9)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
EAS Single Pulse Avalanche Energy (Thermally Limited) mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value
IAR Avalanche Current A
EAR Repetitive Avalanche Energy mJ
TJ Operating Junction and °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.11 °C/W
RθCS Case-to-Sink, Flat, Greased Surface 0.50 –––
RθJA Junction-to-Ambient ––– 62
RθJA Junction-to-Ambient (PCB Mount, steady state) ––– 40
Max.
84
60
340
75
10 lbf•in (1.1Nm)
140
0.90
± 20
99
180
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
PD - 95483C
inie’nn'bnoi RRCCII‘ISI Parameter Min. Typ. Max. Units Conditions V DrainrioVSource Breakdown Voitage so i i V V s : o\/, In : 25mm AB AT Breakdown VoIIage Temp. Coemoien 7 0,053 7 WT: ReIerenoe 1o 25% ID : ImA R sraIIc Drainriosource OnrResistance i 6.8 5.5 n V s : 10v, Io : 51A e) GaIe Threshold VoIIage 2 0 i 4.0 V V05 s, In : IDDuA gIe Forward Transconoooiance 200 i i 5 VB; 5v, ID : 51A I DrainrioVSource Leakage CurrenI i i 20 11A VDS : 60v, VGs : 0v 7 i 250 Vns : 60v, Ves : 0v, T1 :125"C I GaiertoVSource Forward Leakage i i 200 nA GaiertoVSource Reverse Leakage i i 7200 Q ToIaI Gate Charge i 53 as M: Q Gaiertchcurce Charge i 19 28 Q GaiertoVDraIn (“Miler“) Charge i 21 32 e) 1 Tuern DeIay Time 7 19 7 ns VDD : 30v 1 Rise Time 7 90 i 1 TuerH DeIay Time 7 as i 1 Fan Trme i 54 i e) L Internal Dram Induciance i 4.5 i nH Between iead‘ L Internal Source inductance i 7.5 i g and cen1er o1 die conIaoI C InpuI Capamiance i 2810 i oF v 5 : o\/ C omom Capacitance 7 420 i C Reverse TransIer Capacitance 7 200 i C omom Capacitance 7 1440 i v S:ov, VHS :1 av, f : 1.0MHz C omom Capacitance 7 320 7 45V, 1‘ : 1.0MHz C 55 e11. Effective Output Capacitance i 510 7 Parameter Min Typ. Max. Units Conditions I Commuoos Source CorrenI i 7 a4 MOSFET symbol (7 (Bad Drode) / I Poised Source Current 7 i 340 Q (Bod Drode) G) pan IunciIon diode. ’ so i i 13 V T4 '5 Ves @ u i 41 62 ns 0 Reverse Recovery Charge i 54 81 n5 1: e) Forward Tuern TIme
IRF1010EZ/S/LPbF
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Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.077mH,
RG = 25, IAS = 51A, VGS =10V. Part not
recommended for use above this value.
ISD 51A, di/dt 260A/µs, VDD V(BR)DSS,
TJ 175°C.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
S
D
G
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V(BR)DSS Drain-to-Source Breakdown Volta
g
e60– V
∆ΒVDSS
/
TJ Breakdown Volta
g
e Temp. Coefficien
t
–– 0.058 –– V/°C
RDS(on) Static Drain-to-Source On-Resistanc
e
–– 6.8 8.5 m
VGS(th) Gate Threshold Volta
g
e 2.0 4.0 V
g
fs Forward Transconductance 200 –– S
IDSS Drain-to-Source Leaka
g
e Current –– 20
A
–– 250
IGSS Gate-to-Source Forward Leaka
g
e –– 200 nA
Gate-to-Source Reverse Leaka
g
e –– -200
QgTotal Gate Char
g
e ––– 58 86 nC
Qgs Gate-to-Source Char
g
e –– 19 28
Qgd Gate-to-Drain ("Miller") Char
g
e –– 21 32
td(on) Turn-On Dela
y
Time –– 19 ns
trRise Time 90
td(off) Turn-Off Dela
y
Time –– 38
tfFall Time –– 54
LDInternal Drain Inductance –– 4.5 –– nH Between lead,
6mm (0.25in.)
LSInternal Source Inductance 7.5 from packa
g
e
and center of die contact
Ciss Input Capacitance 2810 –– pF
Coss Output Capacitance –– 420 ––
Crss Reverse Transfer Capacitance 200
Coss Output Capacitance 1440 ––
Coss Output Capacitance –– 320 ––
Coss eff. Effective Output Capacitance –– 510 ––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
ISContinuous Source Current –– 84
(Body Diode) A
ISM Pulsed Source Current –– 340
(Body Diode)
VSD Diode Forward Voltage –– 1.3 V
trr Reverse Recovery Time –– 41 62 ns
Qrr Reverse Recover
y
Char
g
e –– 54 81 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, ID = 25A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 51A
VDS = VGS, ID = 10A
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 12C
RG = 7.95
ID = 51A
VDS = 25V, ID = 51A
VDD = 30V
ID = 51A
VGS = 20V
VGS = -20V
TJ = 25°C, IF = 51A, VDD = 30V
di/dt = 100A/
µ
s
TJ = 25°C, IS = 51A, VGS = 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 48V
VDS = 48V
VGS = 10V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 10V
IRF1010EZ/S/LPbF
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.01 0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
20µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
45678910
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
Tj = 25°C
4.5V
0 20 40 60 80 100 120 140
ID,Drain-to-Source Current (A)
0
10
20
30
40
50
60
70
80
90
100
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 25V
60µs PULSE WIDTH
\nte’nn'bjno‘ I RRmtfler VDS ‘ VDS ‘ / FERAT‘ON IN TH‘S Tc : 25‘s T1 : 175’s
IRF1010EZ/S/LPbF
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 102030405060
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 51A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
\nte’rm'k‘mo‘ nch‘wer INGLE PULSE 195» 1. Duly Factor D : m2
IRF1010EZ/S/LPbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 84A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.415 0.000246
0.410 0.000898
0.285 0.009546
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
ID, Drain Current (A)
Limited By Package
IRF1010EZ/S/LPbF
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QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 5.7A
9.1A
BOTTOM 51A
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th) Gate threshold Voltage (V)
ID = 250µA
\nte’rm'k‘mo‘ ,dfler assuming An :
IRF1010EZ/S/LPbF
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Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
25
50
75
100
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 51A
T T Ekfiflfi Internationd 19R Rectifier
IRF1010EZ/S/LPbF
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
Internationd 19R Rectifier m A r: Al ,, m . Wm ‘7 mam m mix-mm: A: m m: m m. 27 mm ms mm m mmmm :7 m [Imam mu m uwwmm m u .7 mam pmmnmmmw m Nix ‘ ‘ ‘ ‘ ‘ ‘ :7 cmwwm Mm mu é 31mm) with ms'rmmmax Mstnvmmsw mm u M wmsv um ar M msvc hm & mam m A, . a mu m w m mu 77 mm m mum mm mm mm W: ‘ n a, mnam [1 x M m A m m. imam ‘ wuswzmmwtmumfiut m p K I w W mm; mm m n m WWW . mm mm mi mm) rm m mun um um _ mumsms m m" Muwzvzws ms ‘_| um W w W ms A m on un ma u w mu an ass n m 154 m: H5 WM“ 1 m5 m we m N mm m‘ ms ma 5 m 4‘: WI) r21 m Den 5 ; W .124 w; d an an 5 \ n Sea 550 ‘ W 7 m m :55 V m IEII w v ”M , aw m u AA". u 27H m , PM u , am x ‘ . z «masc -‘ L '5“ km». m 2m m m 3 w m m am an m u m m. un M 1 w 154 Am ‘10 m l 33‘4“ n m m M m M EXAMPLE: THIS ISANIR LOT 000E 17 INIERNAIIONAL ASSENBLED RECUHER \ WWI A \NIHE ASSE LOGO MM: ‘7 83 Note: "P” m msemuy hnsp ASSENELV / I mdcdes "Lem , Fv my CODE Fur an Aunumunm Qulirmi mum. at nm purl plum see Fur the um: cumm dmwing please mfer u. [R website 1.: www.|rf.com
IRF1010EZ/S/LPbF
www.irf.com 9
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
INTERNATIONAL PART NUMBER
RECT IF IER
LOT CODE
ASSEMBLY
LOGO
YEAR 0 = 2000
DAT E CODE
WEEK 19
LINE C
LOT CODE 1789
EXAMPLE: THIS IS AN IRF1010
Note: "P" in assembly line position
i ndi cates "L ead - F ree"
IN T HE AS S EMBLY LINE "C"
AS S E MBLED ON WW 19, 2000
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010ez.pdf
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
Internationd 19R Recnher ‘1 D‘MENS‘DNS W —‘ 5 8 FIFE ‘ 2 WLLWEYEPS \NCHES T A 1 0 MW MAX Mm MAX 5 L 7 “‘7 3:1 A 4D5 «a: ‘50 m: ’ ‘ A" U DO I] 254 God 010 a 1 a m m m \ (A b‘ 3 M 089 02’] C55 5 7 u 1‘4 ‘ 7a m m min” m h: 1 A ‘ 71 m can 5 c 033 374 m5 029 m m U58 ms 023 5 fl § 72 ‘ ‘4 ‘ 55 ms (:55 .., V g“ ) a is g b: m m 5 §fii um um: D‘ 6 BB 7 275 A E {LVJ » , 955 mm 35m 420 w m a 522 7 m . ”6'37 7 2 5A age no age 7 my ass :7: 52: V” W , ma 2 75 m m H 7 m 7 one . L; 7 ma 7 C70 u‘A L5 0 25 use mo use LA A 75 ‘ 5 25 ‘85 208 out (m [)0 / m m m WWW w mm. m m WW. 2 A7 W m WK W5, AWN q k I I» w mm m W W w W m 33.11.5351“ if: 3§5y¥i§h?‘15“§fyfi N “M“ " “‘ “W“ gum“, no camaw rwvm pawn wow» I: u m k a W 6 mm A . a w K “mm n W mi N 2 1: gym“, 7 WWW MW W a aunwz CUWMMS m (nu mm mm DZPak (TO—263AB) Part Marking Information mm: His ‘5 m IRFsscs WWH [OT CCDE WA INTERNN‘CWM PART NUMBER AssEMaLEDmmM/uzzmo ngmngn Fm mumsmwum-u LOGO \mOm m 2/ DATEOGDE / vg/areoi 20m “ _ Assgmaw J , Not: v m mm Me Wm LO, 003E wgmz mama!” "Lead 7 Fvee" UNE L (J? Wm Numam mmmcm mimgn \ Rm 090 mpcm‘,, 9mm m 2, p7 DEsImATEs mum: Assn/E” / u PRODJCHOPHONM) m a lg m: m wEEKuz A: ASSENELVSIIE 0mg Fur 1m Antumolhe Qunl ed ve .iun 0mm pm please see For Ihe mm mmm drawing please refer n. III “him MI 10 www.irf.com
IRF1010EZ/S/LPbF
10 www.irf.com
D2Pak (TO-263AB) Part Marking Information
DAT E CODE
YEAR 0 = 2000
WE E K 0 2
A = AS S E MB L Y S IT E CODE
RECTIFIER
INTERNATIONAL PART NUMBER
P = DE S IGNAT E S L E AD - F R E E
PRODUCT (OPTIONAL)
F530S
IN THE ASSEMBLY LINE "L"
ASSEMBLED ON WW 02, 2000
THIS IS AN IRF530S WITH
LOT CODE 8024 INTERNAT IONAL
LOGO
RECTIFIER
LOT CODE
ASSEMBLY YEAR 0 = 2000
PART NUMBER
DAT E CODE
LINE L
WE E K 02
OR
F530S
LOGO
ASSEMBLY
LOT CODE
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010ez.pdf
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
Internationd 19R Rectifier é 4i“ 1:- W ‘ WWW mp WW; m m My 2 mm m W m WW5 W5; AWN n k I w w mm mm W W W m w mm m, . my, m H mm Wm ‘7 WW Am“ m mm mm W WWW E. n m a u AWW m W fl w w W M W a WWW Wm mm mm mm N um um WE T a g , b ca w 020 was 5 u an 955 Isa 1m 3 "33W“ * A u m , m , A ”M" L ms m as: XEIEWR LNJ TO-262 Part Marking Information Em» mus/WWW Loy 00m 17m mm mm ASSEMBLEDONMANW. WW ‘NTERNNICNM mm W m wngssmmmm LOGO \ mm 7 /W 89 mm WWW Nma 'Vm memwmunmu ASSENELV mmcales Lendr Fvee’ [CTOCDE My“? mm 0? \NTERNAT‘ONM PART NUMBER Rm“ mm, LOGO \mmg- W Ba mm / V P7 DES‘GVATES LEADFREE Assn/m , mm PRODucrnynoNu) For an Aulumu w Qulifiu‘l \enhm (.1 mm; mm pleas: see Fur um um: mmm dmwing please mfer 1.. m we www.irf.com
IRF1010EZ/S/LPbF
www.irf.com 11
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
LOGO
RECTIFIER
INTERNATIONAL
LOT CODE
ASSEMBLY
LOGO
RECTIFIER
INTERNATIONAL
DAT E CODE
WE E K 19
YEAR 7 = 1997
PART NUMBER
A = ASSEMBLY SITE CODE
OR
PRODUCT (OPTIONAL)
P = DES IGNATES LEAD-FREE
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
AS S E MB L Y
PART NUMBER
DAT E CODE
WE E K 19
LINE C
LOT CODE
YEAR 7 = 1997
AS S EMB L E D ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010ez.pdf
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
01 a Internationd 19R Rectifier International I€2R Rectifier
IRF1010EZ/S/LPbF
12 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
TO-220AB package is not recommended for Surface Mount Application.
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

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