NCV8405A,B Datasheet by ON Semiconductor

View All Related Products | Download PDF Datasheet
0N Semiconductor® www.0nsemi.com
© Semiconductor Components Industries, LLC, 2016
June, 2019 Rev. 8
1Publication Order Number:
NCV8405/D
NCV8405A, NCV8405B
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8405A/B is a three terminal protected LowSide Smart
Discrete device. The protection features include overcurrent,
overtemperature, ESD and integrated DraintoGate clamping for
overvoltage protection. This device is suitable for harsh automotive
environments.
Features
ShortCircuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
www.onsemi.com
*Max current limit value is dependent on input
condition.
SOT223
CASE 318E
STYLE 3
MARKING
DIAGRAM
V(BR)DSS
(Clamped) RDS(ON) TYP ID MAX
42 V 90 mW @ 10 V 6.0 A*
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = 8405A or 8405B
G or G= PbFree Package
1
(Note: Microdot may be in either location)
1
AYW
xxxxx G
G
23
4
GATE
DRAIN
SOURCE
DRAIN
23
4
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
Overvoltage
Protection
ESD Protection
12
3
4
DPAK
CASE 369C
YWW
xxxxxG
NCV8405A, NCV8405B
www.onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
DraintoSource Voltage Internally Clamped VDSS 42 V
DraintoGate Voltage Internally Clamped (RG = 1.0 MW)VDGR 42 V
GatetoSource Voltage VGS "14 V
Continuous Drain Current IDInternally Limited
Power Dissipation SOT223 Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C
Power Dissipation DPAK Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C
PD1.0
1.7
11.4
2.0
2.5
40
W
Thermal Resistance SOT223 Version
JunctiontoAmbient Steady State (Note 1)
JunctiontoAmbient Steady State (Note 2)
JunctiontoSoldering Point Steady State
Thermal Resistance DPAK Version
JunctiontoAmbient Steady State (Note 1)
JunctiontoAmbient Steady State (Note 2)
JunctiontoSoldering Point Steady State
RqJA
RqJA
RqJS
RqJA
RqJA
RqJS
130
72
11
60
50
3.0
°C/W
Single Pulse DraintoSource Avalanche Energy
(VDD = 40 V, VG = 5.0 V, IPK = 2.8 A, L = 80 mH, RG(ext) = 25 W, TJ = 25°C)
EAS 275 mJ
Load Dump Voltage VLD = VA + VS (VGS = 0 and 10 V, RI = 2.0 W, RL = 6.0 W, td = 400 ms) VLD 53 V
Operating Junction Temperature TJ40 to 150 °C
Storage Temperature Tstg 55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surfacemounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 thick).
2. Surfacemounted onto 2 sq. FR4 board (1 sq., 1 oz. Cu, 0.06 thick).
DRAIN
SOURCE
GATE VDS
VGS
ID
IG
+
+
Figure 1. Voltage and Current Convention
www.cnsemi.com
NCV8405A, NCV8405B
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Test Condition Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Note 3)
VGS = 0 V, ID = 10 mA, TJ = 25°CV(BR)DSS 42 46 51 V
VGS = 0 V, ID = 10 mA, TJ = 150°C
(Note 5)
42 45 51
Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 25°CIDSS 0.5 2.0 mA
VGS = 0 V, VDS = 32 V, TJ = 150°C
(Note 5)
2.0 10
Gate Input Current VDS = 0 V, VGS = 5.0 V IGSSF 50 100 mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS = VDS, ID = 150 mAVGS(th) 1.0 1.6 2.0 V
Gate Threshold Temperature Coefficient VGS(th)/TJ4.0 mV/°C
Static DraintoSource OnResistance VGS = 10 V, ID = 1.4 A, TJ = 25°CRDS(on) 90 100 mW
VGS = 10 V, ID = 1.4 A, TJ = 150°C
(Note 5)
165 190
VGS = 5.0 V, ID = 1.4 A, TJ = 25°C105 120
VGS = 5.0 V, ID = 1.4 A, TJ = 150°C
(Note 5)
185 210
VGS = 5.0 V, ID = 0.5 A, TJ = 25°C105 120
VGS = 5.0 V, ID = 0.5 A, TJ = 150°C
(Note 5)
185 210
SourceDrain Forward On Voltage VGS = 0 V, IS = 7.0 A VSD 1.05 V
SWITCHING CHARACTERISTICS (Note 5)
TurnON Time (10% VIN to 90% ID)VGS = 10 V, VDD = 12 V
ID = 2.5 A, RL = 4.7 W
tON 20 ms
TurnOFF Time (90% VIN to 10% ID) tOFF 110
SlewRate ON (70% VDS to 50% VDS)VGS = 10 V, VDD = 12 V,
RL = 4.7 W
dVDS/dtON 1.0 V/ms
SlewRate OFF (50% VDS to 70% VDS) dVDS/dtOFF 0.4
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25°CILIM 6.0 9.0 11 A
VDS = 10 V, VGS = 5.0 V, TJ = 150°C
(Note 5)
3.0 5.0 8.0
VDS = 10 V, VGS = 10 V, TJ = 25°C7.0 10.5 13
VDS = 10 V, VGS = 10 V, TJ = 150°C
(Note 5)
4.0 7.5 10
Temperature Limit (Turnoff) VGS = 5.0 V (Note 5) TLIM(off) 150 180 200 °C
Thermal Hysteresis VGS = 5.0 V DTLIM(on) 15
Temperature Limit (Turnoff) VGS = 10 V (Note 5) TLIM(off) 150 165 185
Thermal Hysteresis VGS = 10 V DTLIM(on) 15
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current VGS = 5 V ID = 1.0 A IGON 50 mA
VGS = 10 V ID = 1.0 A 400
Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL 0.05 mA
VGS = 10 V, VDS = 10 V 0.4
Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V IGTL 0.22 mA
VGS = 10 V, VDS = 10 V 1.0
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
ElectroStatic Discharge Capability Human Body Model (HBM) ESD 4000 V
Machine Model (MM) 400
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
TJs‘an : 25‘0 Us.“ : 150 -40:C M 00°C H
NCV8405A, NCV8405B
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES
8 V
1
10
10 100
Figure 2. Single Pulse Maximum Switchoff
Current vs. Load Inductance
L (mH)
IL(max) (A)
TJstart = 25°C
TJstart = 150°C
10
100
1000
10 10
0
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
L (mH)
Emax (mJ)
TJstart = 25°C
TJstart = 150°C
1
10
100
110
Figure 4. Single Pulse Maximum Inductive
Switchoff Current vs. Time in Clamp
TIME IN CLAMP (ms)
IL(max) (A)
TJstart = 25°C
TJstart = 150°C
10
100
1000
110
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
TIME IN CLAMP (ms)
Emax (mJ)
TJstart = 25°C
TJstart = 150°C
Figure 6. Output Characteristics
VDS = 10 V
25°C
100°C
150°C
40°C
ID (A)
VGS (V)
Figure 7. Transfer Characteristics
VDS (V)
ID (A)
VGS = 2.5 V
3 V
4 V
5 V
6 V
10 V
TA = 25°C
0
2
4
6
8
10
12
14
012345
7 V
9 V
0
2
4
6
8
10
12
12345
0°C‘ VGs 150‘0‘ Ves: 10v 100°C,V :sv 100°C,V55:10V 100°C‘ID:1_4 _ _ _ ___ _ _ _ _ 25°C‘sz:5v I 0°C,I :0,5A _ 25_°cv _0V 40‘C»\0:14 -40§C| :05A 3 4 5 s 7 a 9 1 V55:5V /// // 150°C / \ // \ / \ 0°C 25%:
NCV8405A, NCV8405B
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
Figure 8. RDS(on) vs. GateSource Voltage
VGS (V)
RDS(on) (mW)
150°C, ID = 0.5 A
150°C, ID = 1.4 A
100°C, ID = 0.5 A
100°C, ID = 1.4 A
25°C, ID = 0.5 A
25°C, ID = 1.4 A
40°C, ID = 0.5 A
40°C, ID = 1.4 A
Figure 9. RDS(on) vs. Drain Current
ID (A)
RDS(on) (mW)
VGS = 5 V
VGS = 10 V
ID = 1.4 A
Figure 10. Normalized RDS(on) vs. Temperature
T (°C)
RDS(on) (VGS = 5 V, TJ = 25°C)(NORMALIZED)
25°C
100°C
150°C
40°C
Figure 11. Current Limit vs. GateSource
Voltage
VGS (V)
ILIM (A)
VDS = 10 V
Figure 12. Current Limit vs. Junction
Temperature
TJ (°C)
ILIM (A)
VDS = 10 V
VGS = 5 V
VGS = 10 V
Figure 13. DraintoSource Leakage Current
VDS (V)
IDSS (mA)
VGS = 0 V
25°C
100°C
150°C
40°C
50
100
150
200
250
300
345678910
50
70
90
110
130
150
170
190
210
40°C, VGS = 5 V
40°C, VGS = 10 V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
25°C, VGS = 5 V
25°C, VGS = 10 V
100°C, VGS = 5 V
100°C, VGS = 10 V
150°C, VGS = 10 V
150°C, VGS = 10 V
0.5
0.75
1.0
1.25
1.5
1.75
2.0
40 20 0 20 40 60 80 100 120 140
3
5
7
9
11
13
15
567891
0
4
6
8
10
12
14
40 20 0 20 40 60 80 100 120 140 160
0.001
0.01
0.1
1
10
10 15 20 25 30 35 40
7 : /// \\ /;00/ 25%: /// \ ///100°C ‘//// \ : / / 150°C S/d((un
NCV8405A, NCV8405B
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES
DRAINSOURCE VOLTAGE SLOPE (V/ms)
0.6
0.7
0.8
0.9
1
1.1
1.2
40 20 0 20 40 60 80 100 120 140
Figure 14. Normalized Threshold Voltage vs.
Temperature
T (°C)
NORMALIZED VGS(th) (V)
ID = 150 mA
VGS = VDS
Figure 15. BodyDiode Forward
Characteristics
IS (A)
VSD (V)
25°C
100°C
150°C
40°C
VGS = 0 V
td(off)
td(on)
tf
tr
Figure 16. Resistive Load Switching Time vs.
GateSource Voltage
VGS (V)
TIME (ms)
ID = 2.5 A
VDD = 12 V
RG = 0 W
Figure 17. Resistive Load Switching
DrainSource Voltage Slope vs. GateSource
Voltage
VGS (V)
DRAINSOURCE VOLTAGE SLOPE (V/ms)
ID = 2.5 A
VDD = 12 V
RG = 0 W
dVDS/dt(on)
dVDS/dt(off)
TIME (ms)
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
RG (W)
tf, (VGS = 10 V)
tf, (VGS = 5 V)
td(off), (VGS = 10 V)
tr, (VGS = 5 V)
td(off), (VGS = 5 V)
tr, (VGS = 10 V) td(on), (VGS = 5 V)
td(on), (VGS = 10 V)
ID = 2.5 A
VDD = 12 V
dVDS/dt(off), VGS = 5 V
dVDS/dt(on), VGS = 10 V
dVDS/dt(on), VGS = 5 V
dVDS/dt(off), VGS = 10 V
Figure 19. DrainSource Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
RG (W)
ID = 2.5 A
VDD = 12 V
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1234567891
0
0
50
100
150
200
345678910
0.000
0.500
1.000
1.500
345678910
0
25
50
75
100
125
0 200 400 600 800 1000 1200 1400 1600 1800 2000
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0 500 1000 1500 20
0
NCV8405A, NCV8405B
www.onsemi.com
7
TYPICAL PERFORMANCE CURVES
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
PULSE WIDTH (sec)
RqJA 1” SQ 1 Oz COPPER
Figure 20. Transient Thermal Resistance
0
20
40
60
80
100
120
140
0 100 200 300 400 500 600 700
COPPER HEAT SPREADER AREA (mm2)
qJA (°C/W)
Figure 21. qJA vs. Copper
qJA Curve with PCB cu thk 1.0 oz
qJA Curve with PCB cu thk 2.0 oz
TA 25°C
RL VIN Figure 22. Resistive Load Switching Test Circuit VIN IDS Figure 23. Resistive Load Switching Waveforms www.cnsemi.com a
NCV8405A, NCV8405B
www.onsemi.com
8
TEST CIRCUITS AND WAVEFORMS
DUT
G
D
S
RL
VDD
IDS
VIN
Figure 22. Resistive Load Switching Test Circuit
RG
+
Figure 23. Resistive Load Switching Waveforms
tON
VIN
IDS
tOFF
10%
10%
90%
90%
G DUT VDD E —o IDS Figure 24. Inductive Load Switching Tesl Circuit www.cnsemi.com s
NCV8405A, NCV8405B
www.onsemi.com
9
TEST CIRCUITS AND WAVEFORMS
VDD
IDS
VIN
L
VDS
tp
Figure 24. Inductive Load Switching Test Circuit
DUT
G
D
S
RG +
0 V
5 V
Tav
VIN
IDS
VDS
Tp
VDS(on)
Ipk
0
VDD
V(BR)DSS
Figure 25. Inductive Load Switching Waveforms
www onsem' com
NCV8405A, NCV8405B
www.onsemi.com
10
ORDERING INFORMATION
Device Package Shipping
NCV8405ASTT1G SOT223
(PbFree)
1000 / Tape & Reel
NCV8405ASTT3G SOT223
(PbFree)
4000 / Tape & Reel
NCV8405ADTRKG DPAK
(PbFree)
2500 / Tape & Reel
NCV8405BDTRKG DPAK
(PbFree)
2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
0N Semiwndudw" DPAK (SINGLE GAUGE) CASE 3690 u ISSUE F DATE 21 JUL 2015 NOTES I DIMENSIoNINe AND IOLERANCING PER ASME w 5M my 2 CONIROLUNG DIMENSION INCHES A a THERMAL FAD CONTOUR OPTIONAL WITHIH DIE MENSIONS D3. L3 and 2 c2 4 DIMENSIONS D AND E DO NOT INCLUDE mom i FLASH. PROTRUSIONS 0R BURRS MOLD FLASH. PROTRUSIONS 0R GATE EURRS SHALL NOT EXCEED D we INCHES FER SIDE Z 5 DIMENSIONS D AND E ARE DEIERMINED AT ME OUTERMOST EXTREMES or THE PLASTIC DoDv j 5 DATIIMS A AND a ARE DETERMINED AT DAIDM FLANEH DE'IAIL A H , 7 OPTIONAL MOLD FEAIURE \ \ 4 IHcHEs MILLIMEYERS c J DIM MIN MAX MIN MAX A was mm 215 2:5 AI neon Imus DDD III: II a D25 n Ins D 53 n 59 .a mega was 072 H4 llanusmom® ‘ I man I126 457 545 I a new W24 0A5 m :2 new W24 0A5 m I D 0235 u245 597 a22 , E nzsn nzss 5:5 37: GA“ I f I f e nuaasc 229m L2 m SEATING H 03m Iu4m 9w Imn { "ME W 'I” L was Innm Ha I I73 , LI DmHEE 2eanEE L2 nnzaasc 051 asc T A1 L: Haas nusu nae I27 LA um In] 2 was :93 GENERIC MARKING DIAGRAM‘ STVLEI SIVLE 2 STvLE 3 SWLE 4 SIVLE 5 PIN] BASE PINI GATE PIN] ANDDE FINI CATHODE PINI GATE (fl 2 COLLECTOR 2 DRAIN 2 CATHODE 2 ANODE 2 ANODE a EMITTER 3 SOURCE a ANDDE 3 GATE 3 CATHODE E: 4 COLLECTOR 4 DRAIN 4 cATHoDE 4 AHoDE 4 AHoDE XXXXXXG AYWW ALYWW I: xxx STvLE a SWLE 7 STVLE a STVLE e SWLE m xxxxxe PIN] MTI FIHI GATE pm we mm ANDDE FIHI CATHODE U E: z 2 MT2 2 COLLECTOR 2 cAIHoDE 2 CAIHODE 2 ANODE a GATE 3 EMITTER a ANODE a RESISIORADJUST 3 CATHODE 4 MT2 4 COLLECTOR 4 cAIHoDE 4 CAIHODE 4 ANODE Ic Dlscrele SOLDERING FOOTPRINT“ xxxxxx : name Code : Assemny LocaIIon 6.20 A a no .7 4. i L : Wafer Lot 1: 244 II He v a Y 2.53 E 93' " 01,12 ww : Work Week I e : Ph-Free Package *rms InIonnaIIon Is genenc. PIaasa IeIaI 5.60 M, £1 H La devIce daIa sheeI for actual pan $ 0.063 0.243 marking SCALE 3 I (fl) “For addmonal Inlormamn on our Pb-Free sITategy and soldenng deIaIISI pIaase download Ihe ON Semlconduclol Soldering and Mourmng Techmques HeIeranoe Manual, SDLDERRM/D. ON SemIcunduclm and are llademavks aI SemIchduclur Cnmpunenls InausIIIes. LLC dba ON Semlcanduclar Dr Ils suhsIdlarIeS In Ine DnIIea SIaIes andJal aIneI aaunInes ON SemIcunduclar Iesewes me "am Ia make changes wIlhmA IunneI nanae Ia any praduns nequn oH Semenducmv makes m7 wananIy. represenlalmn av guarantee regardmg Ine auIIaInIIIy aI IVS manual: Ian any pamauIaI purpase nay dues ON SEmIcnnduclm assume any IIaInIIIy vasIng auIaI Ine sppiIcs‘IarI a! use In any pmdudm Clrcull ana spEcIlIcsHy uIsaIaIms any and an IIaaIIIIy InaIuaIng wIlhDuI IInuIaIIan speaIaI aanaeauenIIaI a! IneIaenIaI damages ON SemImnduchr dues na| aanuey any hcense under me paIenI ngnIa Ivar Ine
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
DATE 21 JUL 2015
SCALE 1:1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
12
3
4
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. RESISTOR ADJUST
4. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. ANODE
b
D
E
b3
L3
L4
b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
XXXXXX = Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
G = PbFree Package
AYWW
XXX
XXXXXG
XXXXXXG
ALYWW
DiscreteIC
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer
to device data sheet for actual part
marking.
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
e
BOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON10527D
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
DPAK (SINGLE GAUGE)
© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm 9 www nnserm cum
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 8002829855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative

Products related to this Datasheet

IC PWR DRIVER N-CHAN 1:1 SOT223
IC PWR DRIVER N-CHAN 1:1 SOT223
IC PWR DRIVER N-CHAN 1:1 SOT223
IC PWR DRIVER N-CHAN 1:1 SOT223
IC PWR DRIVER N-CHAN 1:1 SOT223
IC PWR DRIVER N-CHANNEL 1:1 DPAK
IC PWR DRIVER N-CHANNEL 1:1 DPAK
IC PWR DRIVER N-CHANNEL 1:1 DPAK
IC PWR DRIVER N-CHAN 1:1 SOT223
IC PWR DRIVER N-CHAN 1:1 SOT223
IC PWR DRIVER N-CHAN 1:1 SOT223
IC PWR DRIVER N-CHAN 1:1 SOT223
IC PWR DRIVER N-CHAN 1:1 SOT223
IC DRIVER LOW SIDE DPAK-3