BTS3118N Datasheet by Infineon Technologies

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Product Summary
Drain source voltage VDS 42 V
On-state resistance RDS
(
on
)
100 m
Nominal load current ID
(
Nom
)
2.17 A
Clamping energy E
A
S250 mJ
VPS05163
1
2
3
4
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
µC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown
Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Datasheet 1 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3118N
@neon V\ V\ V\ AS Rsz
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Drain source voltage V
DS
42 V
Drain source voltage for short circuit protection
T
j
= -40...150°C
V
DS(SC)
20
Continuous input current
-0.2V V
IN
10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
no limit
|I
IN
| 2
mA
Operating temperature T
j
-40 ...+150 °C
Storage temperature T
stg
-55 ... +150
Power dissipation
T
C
= 85 °C
P
tot
3.8 W
Unclamped single pulse inductive energy
1)
E
A
S
250 mJ
Load dump protection V
LoadDump2)
= V
A
+ V
S
V
IN
= 0 and 10 V, td = 400 ms, R
I
= 2 ,
R
L
= 6 , V
A
= 13.5 V
V
LD
50 V
Electrostatic discharge voltage
(Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
V
ESD
2 kV
Thermal resistance
junction - ambient:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
125
72
K/W
junction-soldering point: R
thJS
17 K/W
1 Not tested, specified by design.
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Datasheet 2 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3118N
@neon l|N(on)
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150, I
D
= 10 mA
V
DS(AZ)
42 - 55 V
Off-state drain current T
j
= -40 ... +150°C
V
DS
= 32 V, V
IN
= 0 V
I
DSS
- 1.5 10 µA
Input threshold voltage
I
D
= 0.6 mA, T
j
= 25 °C
I
D
= 0.6 mA, T
j
= 150 °C
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
On state input current I
IN
(
on
)
- 10 30 µA
On-state resistance
V
IN
= 5 V, I
D
= 2.17 A, T
j
= 25 °C
V
IN
= 5 V, I
D
= 2.17 A, T
j
= 150 °C
R
DS(on)
-
-
90
160
120
240
m
On-state resistance
V
IN
= 10 V, I
D
= 2.17 A, T
j
= 25 °C
V
IN
= 10 V, I
D
= 2.17 A, T
j
= 150 °C
R
DS(on)
-
-
70
130
100
200
Nominal load current
V
DS
= 0.5 V, T
j
< 150°C, V
IN
= 10 V, T
A
= 85 °C
I
D(Nom)
2.17 - -
A
Current limit (active if V
DS
>2.5 V)
1)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 200 µs
I
D(lim)
10 15 20
1Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condit
nd a short circuit occurs, these values might be exceeded for max. 50 µs.
Datasheet 3 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3118N
@neon Tn IlN(Prm)
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 4.7 , V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
- 40 100 µs
Turn-off time V
IN
to 10% I
D
:
R
L
= 4.7 , V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
- 70 100
Slew rate on 70 to 50% V
bb
:
R
L
= 4.7 , V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
- 0.4 1.5 V/µs
Slew rate off 50 to 70% V
bb
:
R
L
= 4.7 , V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
- 0.6 1.5
Protection Functions
1)
Thermal overload trip temperature T
j
t
150 175 - °C
Input current protection mode I
IN
(
Prot
)
60 120 300 µA
Input current protection mode
T
j
= 150 °C
I
IN(Prot)
- 100 300
Unclamped single pulse inductive energy
2)
I
D
= 2.17 A, T
j
= 25 °C, V
bb
= 12 V
E
AS
250 - - mJ
Inverse Diode
Inverse diode forward voltage
I
F
= 10.9 A, t
m
= 250 µs, V
IN
= 0 V,
t
P
= 300 µs
V
SD
- 1 - V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
Datasheet 4 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3118N
@neon
Block diagram
Inductive and overvoltage
output clamp
Terms
HITFET
IN D
VIN
IDVDS
1
IIN
S
Vbb
RL
2
3
HITFET
VZ
D
S
Short circuit behaviour
Input circuit (ESD protection)
IN
t
V
t
I
IN
t
I
D
t
T
j
Gate Drive
Source/
Ground
Input
Datasheet 5 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3118N
@neon
1 Maximum allowable power dissipation
Ptot = f(TS) resp.
Ptot = f(TA) @ RthJA=72 K/W
-75 -50 -25 0 25 50 75 100
°C
150
T
S
;T
A
0
1
2
3
4
5
6
7
8
W
10
P
tot
6cm2
max.
2 On-state resistance
RON = f(Tj); ID=2.17A; VIN=10V
-50 -25 0 25 50 75 100 125
°C
175
Tj
0
25
50
75
100
125
150
175
m
225
RDS(on)
typ.
max.
3 On-state resistance
RON = f(Tj); ID= 2.17A; VIN=5V
-50 -25 0 25 50 75 100 125
°C
175
T
j
0
25
50
75
100
125
150
175
200
m
250
R
DS(on)
typ.
max.
4 Typ. input threshold voltage
VIN(th) = f(Tj);ID = 0.3 mA; VDS = 12V
-50 -25 0 25 50 75 100
°C
150
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
2
V
GS(th)
Datasheet 6 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3118N
@neon
5 Typ. transfer characteristics
I
D
=f(V
IN
); V
DS
=12V; T
Jstart
=25°C
1 2 3 4 5 6 7 8
V
10
V
IN
0
2
4
6
8
10
12
A
16
I
D
6 Typ. short circuit current
I
D(lim)
= f(T
j
); V
DS
=12V
Parameter: V
IN
-50 -25 0 25 50 75 100 125
°C
175
T
j
10
12
14
16
18
20
A
24
I
D
5V
Vin=10
7 Typ. output characteristics
I
D
=f(V
DS
); T
Jstart
=25°C
Parameter: V
IN
0 1 2 3 4
V
6
VDS
0
2
4
6
8
10
12
14
16
A
20
I
D
3V
4V
5V
6V
7V
Vin=10V
8 Typ. off-state drain current
I
DSS
= f(T
j
)
-50 -25 0 25 50 75 100 125
°C
175
T
j
0
1
2
3
4
5
6
7
8
9
µA
11
I
DSS
typ.
max.
Datasheet 7 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3118N
@neon % //
9 Typ. overload current
ID(lim) = f(t),Vbb=12 V, no heatsink
Parameter: Tjstart
0 1 2 3 ms 5
t
0
5
10
15
A
25
I
D(lim)
-40°C
25°C
85°C
+150°C
10 Typ. transient thermal impedance
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
11 Determination of ID(lim)
ID(lim) = f(t); tm = 200µs
Parameter: TJstart
0 0.1 0.2 0.3 0.4
ms
0.6
t
0
5
10
15
A
25
I
D(lim)
-40°C
25°C
85°C
150°C
Datasheet 8 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3118N
@neon a<—> + a7 1 :l: _ 3 _ f/ / A i '\ 7 ,,,,,,, 7T7 ,,,,,,, 7 77 77 7 1 1 3 1 I 1 I \ \ E Q B
Datasheet 9 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3118N
Package Outlines
1 Package Outlines
GPS05560
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5 ±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7
±0.3
B0.25 M
±0.2
3.5
B
0...10˚
Figure 1 PG-SOT223-4 (Plastic Green Small Outline Transistor Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.Dimensions in mm
@neon
Datasheet 10 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3118N
Revision History
2 Revision History
Version Date Changes
Rev. 1.3 2008-04-14 Package information updated to SOT223-4
Rev. 1.2 2007-03-28 released automotive green version
Package parameter (humidity and climatic) removed in Maximum ratings
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added
Rev. 1.1 2004-02-02 released production version
Edition 2008-04-14
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.

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