BFP460 Datasheet by Infineon Technologies

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(ifineon fl“ ROHS Quahfiad
2010-05-17
BFP460
1
1
2
3
4
NPN Silicon RF Transistor
General purpose low noise amplifier
for low voltage, low current applications
High ESD robustness, typical 1500V (HBM)
Low minimum noise figure 1.1 dB at 1.8 GHz
High linearity: output compression point
OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz
Easy to use standard package with visible leads
Pb-free (RoHS compliant) package
Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP460 ABs 1 = E 2 = C 3 = E 4=B - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0 °C
T
A
0 °C
VCEO
4.5
4.2
V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 1.5
Collector current IC70 mA
Base current IB7
Total power dissipation1)
TS 92°C
Ptot 230 mW
Junction temperature TJ150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature TSt
g
-65 ... 150
1TS is measured on the collector lead at the soldering point to the pcb
(ifineon / sz V\
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BFP460
2
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 250 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5.8 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
VCE = 2 V, VBE = 0
VCE = 5 V, VBE = 0 , TA = 85°C
Verified by random sampling
ICES
-
-
-
-
1
2
1000
30
40
nA
Collector-base cutoff current
VCB = 2 V, IE = 0
VCB = 5 V, IE = 0
ICBO
-
-
1
-
30
30
Emitter-base cutoff current
VEB = 0,5 V, IC = 0
IEBO - 1 500
DC current gain
VCE = 3 V, IC = 20 mA , pulse measured
hFE 90 120 160 -
1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance
(ifineon Electrical Characteristics at TA = 25°C, unless otherwise 5 ecified Values
2010-05-17
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 3 V, f = 1 GHz
fT16 22 - GHz
Collector-base capacitance
VCB = 3 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.32 0.45 pF
Collector emitter capacitance
VCE = 3 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.28 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.55 -
Minimum noise figure
VCE = 2V, IC = 3 mA , ZS = ZSopt, f = 100 MHz
VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 1.8 GHz
VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 3 GHz
NFmin
-
-
-
0.7
1.1
1.2
-
-
-
dB
(Infineon Electrical Characteristics at TA = 25°C, unless otherwise s ecified Values AC Characteristics (verified by random sampling
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Maximum power Gain1)
IC = 3 mA, VCE = 1.5 V, ZS = ZSopt,ZL = ZLopt,
f = 100 MHz
IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,
f = 1,8 GHz
f = 3 GHz
Gmax
-
-
-
26.5
17.5
12.5
-
-
-
dB
Transducer gain
IC = 3 mA, VCE = 1.5 V, ZS = ZL = 50,
f = 100 MHz
IC = 20 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 1.8 GHz
f = 3 GHz
|S21e|2
-
-
-
20
15
10.5
-
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 20 mA, f = 100 MHz
VCE = 3 V, IC = 20 mA, f = 1.8 GHz
IP3
-
-
23.5
27.5
-
-
dBm
1dB compression point at output
VCE = 3V, IC = 20mA , ZS=ZL = 50, f= 100 MHz
VCE = 3V, IC = 20mA, ZS=ZL = 50, f = 1.8 GHz
VCE = 3V, IC = 35mA, ZS=ZL = 50, f = 1.8 GHz
P-1dB
-
-
-
9.5
11.5
13
-
-
-
1Gma = |S21 / S12| (k-(k²-1)1/2), Gms = S21 / S12
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
(ifineon /
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BFP460
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Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 A150
0
20
40
60
80
100
120
140
160
180
200
220
V
260
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 2 4 6 8 10 V14
VCB
0
0.1
0.2
0.3
0.4
0.5
pF
0.7
CCB
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50)
VCE = parameter, f = 1800MHz
0 10 20 30 40 mA 55
IC
5
7
9
11
13
15
17
19
21
23
25
27
29
dBm
33
IP3
1V
2V
3V
4V
Transition frequency fT= ƒ(IC)
f = 1 GHz
VCE = parameter
0 10 20 30 40 mA 60
IC
4
6
8
10
12
14
16
18
20
GHz
24
fT
3-4V
2V
1V
(ifineon / 3 2.5 2 % E I 5 T .. 1 0.5 mm iififl'fiz 0 \ 0 1 I) 20 3|) 4|) 5|) SI) 70 _ urn/«1
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Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 3 V, IC = 20 mA
01234GHz 6
f
0
5
10
15
20
25
30
35
40
dB
50
G
Gms
Gma
|S21|²
Power gain Gma, Gms = ƒ (IC)
VCE = 3V
f = parameter in GHz
0 10 20 30 40 mA 60
IC
4
6
8
10
12
14
16
18
20
dB
24
G
0.9
1.8
2.4
3
4
5
6
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
0.5 1 1.5 2 2.5 3 3.5 V4.5
VCE
4
6
8
10
12
14
16
18
20
dB
24
G
0.9
1.8
2.4
3
4
5
6
Noise figure F = ƒ(IC)
VCE = 2 V, f = parameter
ZS = ZSopt
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Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50)
VCE = parameter, f = 100MHz
0 10 20 30 40 50 60 mA 80
IC
0
4
8
12
16
20
24
dBm
32
IP3
1.5V
2V
2.5V
3V
4V
Noise figure F = ƒ(f)
VCE = 2V, ZS = ZSopt , IC = parameter
Source impedance for min.
noise figure vs. frequency
VCE = 2V, IC = parameter
(ifleon www‘infineon‘com/rf‘models
2010-05-17
BFP460
8
SPICE Parameter
For the SPICE model as well as for the S-parameters (including noise parameters)
please refer to our internet website www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design.
You find the BFP460 SPICE model in the internet in MWO- and ADS- format which
you can import into these circuit simulation tools very quickly and conveniently.
The simulation data have been generated and verified using typical devices.
The BFP460 SPICE model reflects the typical DC- and RF-performance with
high accuracy.
(imeon ,gfi LiJ 0 %
2010-05-17
BFP460
9
Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
2
±0.2
±0.1
0.9
12
34
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1
M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
(ifineon
2010-05-17
BFP460
10
Datasheet Revision History: 17 May 2010
This datasheet replaces the revision from 14 August 2008.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revision: 14 August 2008
Page Subject (changes since last revision)
1 Maximum ratings for collector current ICmax, base current IBmax and total
power dissipation Ptot increased
2 Typical values for leakage currents included, maximum leakage current values
reduced
3 Noise description at 100 MHz added
4 Gain and linearity description at 100 MHz added
5 - 7 Curves for IP3 and noise at 100 MHz added
(ifleon
2010-05-17
BFP460
11
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ( <www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.

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