Internatiom‘ 152R Recfifier So‘denn Tem rature lor 10 seconds R 0,.) max 1.535m§2@vGS = 10V G ate Drain Source 300 1.6mm 4er case
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07/03/09
IRLB3813PbF
HEXFET® Power MOSFET
Notes through are on page 9
GDS
Gate Drain Source
PD - 97407
TO-220AB
S
D
G
D
Applications
Benefits
lVery Low RDS(on) at 4.5V VGS
lUltra-Low Gate Impedance
lFully Characterized Avalanche Voltage
and Current
lLead-Free
lOptimized for UPS/Inverter Applications
lHigh Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
lPower Tools
V
DSS
R
DS(on)
max Qg (typ.)
30V 1.95m@V
GS
= 10V 57nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Maximum Power Dissipation
P
D
@T
C
= 100°C Maximum Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.64
R
θCS
Case-to-Sink, Flat Greased Surface 0.50 ––
R
θJA
Junction-to-Ambient ––– 62
V
°C
°C/W
W
A
1.6
120
10lb in (1.1N m)
-55 to + 175
300 (1.6mm from case)
230
Max.
260
1050
± 20
30
190
memnmmo‘ RReJ he Swrlch Charge (0 + Q at E smgle Pulse Averanche Energye) \ Avalanche Current (D Bod Drode Bod Drode G) n unctlon diode,
IRLB3813PbF
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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒVDSS
/
TJ Breakdown Voltage Temp. Coefficient ––– 11 ––– mV/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 1.60 1.95 m
––– 2.00 2.60
VGS(th) Gate Threshold Voltage 1.35 1.90 2.35 V
VGS(th)
/
TJGate Threshold Voltage Coefficient ––– -7.8 ––– mV/°C
IDSS Drain-to-Source Leakage Current –– ––– 1.0 µA
––– ––– 100
IGSS Gate-to-Source Forward Leakage ––– –– 100 nA
Gate-to-Source Reverse Leakage ––– –– -100
gfs Forward Transconductance 140 –– –– S
QgTotal Gate Charge –– 57 86
Qgs1 Pre-Vth Gate-to-Source Charge ––– 16 –––
Qgs2 Post-Vth Gate-to-Source Charge ––– 6.7 ––– nC
Qgd Gate-to-Drain Charge ––– 19 –––
Qgodr Gate Charge Overdrive –– 15 ––– See Fig. 16
Qsw Switch Char
g
e (Qgs2 + Qgd)–– 25.7 –––
Qoss Output Charge ––– 35 ––– nC
RGGate Resistance ––– 0.87 1.3
td(on) Turn-On Delay Time ––– 36 –––
trRise Time ––– 170 –– ns
td(off) Turn-Off Delay Time ––– 33 –––
tfFall Time –– 60 ––
Ciss Input Capacitance ––– 8420 ––
Coss Output Capacitance ––– 1620 –– pF
Crss Reverse Transfer Capacitance ––– 650 –––
Avalanche Characteristics
Parameter Units
EAS
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
mJ
IAR
A
va
l
anc
h
e
C
urrent A
Diode Characteristics
Parameter Min. T
y
p. Max. Units
ISContinuous Source Current ––– –– 260
(Body Diode) A
ISM Pulsed Source Current ––– –– 1050
(
Bod
y
Diode
)
VSD Diode Forward Voltage ––– –– 1.0 V
trr Reverse Recovery Time ––– 24 36 ns
Qrr Reverse Recovery Charge ––– 22 33 nC
ƒ = 1.0MHz
VGS = 4.5V, ID = 48A
VGS = 20V
VGS = -20V
VDS = VGS, ID = 15A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 12C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 60A
MOSFET symbol
VDS = 15V, ID = 48A
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ID = 48A
VDS = 15V
Conditions
See Fig. 14
VGS = 4.5V
TJ = 25°C, IF = 48A, VDD = 15V
di/dt = 244A/
µ
s
TJ = 25°C, IS = 48A, VGS = 0V
showing the
integral reverse
p-n junction diode.
Typ.
–––
–––
ID = 48A
VGS = 0V
VDS = 15V
RG = 1.8
Max.
520
48
mermmmo‘ IEER Rec’Her
IRLB3813PbF
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Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
60µs PULSE WIDTH
Tj = 25°C
3.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
3.0V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1234567
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 15V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 120A
VGS = 10V
mermmmo‘ RReJ he OPERATION \N THIS S
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 25 50 75 100 125 150
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
ID= 48A
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0 1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
mermmmo‘ IEER Rec’Her INGLE PULS‘ mes. 1. Duly Factor D : m2
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
50
100
150
200
250
300
ID, Drain Current (A)
Limited By Package
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS(th), Gate threshold Voltage (V)
ID = 150µA
ID = 1.0mA
ID = 1.0A
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.4985 0.004600
0.0022 8.246580
0.0001 6.149340
0.1392 0.000300
mermmmo‘ IEZR R617 her
IRLB3813PbF
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Fig 13c. Unclamped Inductive Waveforms
Fig 13b. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 13a. Maximum Avalanche Energy
vs. Drain Current
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 14b. Switching Time Waveforms
Fig 12. On-Resistance vs. Gate Voltage
Fig 14a. Switching Time Test Circuit
2 4 6 8 10
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
12
RDS(on), Drain-to -Source On Resistance (m)
ID = 60A
TJ = 25°C
TJ = 125°C
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 17A
27A
BOTTOM 48A
International ISIR Rectifier E T T ’flfl‘ . dv/dtcunimiied by RC RI: Apni . Dvwer Same tyne as D u 7 ,3 When . iSD cantmiied by Duty Faciar ‘ D‘ . D u T Dame Undev Test (-) 6’) “J vw i my made 1 . menm Dmn . inducmrcumm \ Warfare,“ Email: 5 5w. * vGS = 5v my Logic Levei Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit ior N»Channe| HEXFET® Power MOSFETS Cunenl Regulaim :7 7 is’afie’TfiE Es’D’U’T 7 7 T i i 1 } sum :3: i im/ 2“: i i 3MP ‘ L ,,,,,,,,,,,,, 4 + VDS D.U,T. . if K A VGS i— 3m [ AAA/(7W IG : ID Cuvvenl Samvimg fizsisiar: Fig 16a. Gaie Charge Tesi Circuit www.irf.com Qgsz as Fig 16b. Gaie Charge Wavef
IRLB3813PbF
www.irf.com 7
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 16a. Gate Charge Test Circuit
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Fig 16b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
ummE'JEJEJ “‘x 4‘, j International ISIRRechfler m , wwwm mm m m m u 17 mm m m m m Wm, 37 WM w W mm m U ‘7 WWW“ w; k mm a x fl A mm mm mm mm mm w mm Wm mm m m W {W mm mm SNEJL WLHMUEPS NCNKS w w W w W h m m m ma “9-, m5 035 5 ”a w us 055 on 022 5 n Hz mm m ssn . W m ms m 355 D7 U is ‘2 NE 450 53’ 7 m L 955 mm m an .,7 mm a 555 m m 35H - W." :2 , 075 , cm a e 256530 WDBSE m 9‘ neat r” :3sz m is. m m m ‘5 mm, L m m w H 356 lflfi M VSE J m .o m we we m m: TO-ZZOAB packages are not recommended for Surfac Note: For the most current drawing please refer lo IR website at: MEI/WWW 8
IRLB3813PbF
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TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
International ISIR Rectifier EXAMPLE THtS is AN iREioio LOT CODE i789 ASSEMBLED ON WW tel 2000 W THE ASSEMELV LtNE ‘C‘ Nola ‘P‘ in assembiy tine posmon indicalas ‘Lead , Flee‘ Notes: (D Repetitive rating‘ pulse Wialh limlled by max iuncllon temperatuve (2) Slanlng n : 25%;, L : 0.45ml-l, RG : 25ml n5: 45A. (3) Pulse mm s 4OUus, duty cycle s 2%. tNTERNATtONAL / PART NUMBER RECTtFtER \ LOGO \\ ' DATE CODE ASSEMBLV /’ VEAR 0 = 2000 LOT CODE WEEK i9 LtNE c 6) When mounted on 1" square PCB (FRVA or Grio Malerial). Fol vecommerlded footprint and soldering techniques refev lo applicalion note #ANVSQA. (D R“ is measured 5! TJ approximately 90°C (9 Calculated continuous current based on maximum atlowable junction lemperalule, Package limilalion current ls 120A. Data and spemlications subiect to change without notice. This product has been designed and an Quatlfication Standards International IEER Rectifier IR WORLD HEADQUARTERS: 233 Kansas St, El Segundo, Caiifornia 9 www.irf.com Visit us at wwwairf.com for sa
IRLB3813PbF
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Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.45mH, RG = 25,
IAS = 48A.
Pulse width 400µs; duty cycle 2%.
Notes:
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 120A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2009
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/