DRDzzzzW Datasheet by Diodes Incorporated

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ms ® DRD (xxxx) W "’1 I" 7 SOT-363 H H H Dim Min Max T A 0.10 0.30 — B 1.15 1.35 Mechan al Data ‘ 1 c 2 00 2 20 - Case, $011363 Ll U Ll , D 0.65 Nominal . Case Malenal. Molded Plasllc, "Green" Molding F 0 30 0 40 Compound UL Flammaolllly classmcallon Rallng 94V70 +7 44 ' ' - Mmsmre Sensmvlty. Level1 perJrSTDrOZOD H LEO 2-20 - Terminal Connecnons. See Diagram J 7 0.10 . Terminals, Fifllsh . Malle Tln annealed over Alloy 42 K 0 00 1 00 leamrame. Solderaole per MlLrsTDrzoz, Methcd 20a ' ' . Marking lnlormallon, See Page a '- 0-25 0-40 . Ordering lnlormallon. See Page a M 0.10 0.25 . Welgm. 0003 grams lapproxmale) at All Dimensions in mm PIN 1111110111) R2(NOM) H H H H H I] H H H H H H DnDNalew 1K 10K DRDPBWBW 1K 10K 1 1% 1 < 1="" 1="" drdnbzgw="" 220="" 4.7k="" drdpbzsw="" 220="" 4.7k="" ‘="" '="" '="" ‘="" lilili="" hui]="" udli="" lidli="" characteristic="" symbol="" value="" um1="" power="" dlsslpanon="" male="" 3)="" pd="" 200="" mw="" thermal="" reslslance.="" juncllon="" 1o="" amblem="" air="" (note="" 3)="" r11="" m="" 625="" qc/w="" operallng="" and="" slorage="" temperature="" range="" n,="" tm="" .55="" 1o="" +150="" so="" characlerislio="" symbol="" value="" unil="" colieclorrfiase="" vollage="" vcbo="" 45="" v="" colieclorremmervohage="" vceo="" 13="" v="" eminerrbase="" vollage="" veeo="" 5="" v="" colleclor="" current="" (male="" 3)="" i0="" 1000="" ma="" characlerislio="" symbol="" value="" unil="" colieclorrfiase="" vollage="" vcbo="" 30="" v="" collectorremmer="" vollage="" vceo="" 30="" v="" eminerrbase="" vollage="" veeo="" 4.0="" v="" collemor="" current="" ,="" conlmuous="" (nole="" 31="" i0="" 500="" ma="">
DRD (xxxx) W
COMPLEX ARRAY FOR RELAY DRIVERS
Features
Epitaxial Planar Die Construction
One Transistor and One Switching Diode in One Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 8
Ordering Information: See Page 8
Weight: 0.008 grams (approximate)
P/N R1 (NOM) R2 (NOM)
DRDNB16W
DRDPB16W
DRDNB26W
DRDPB26W
1K
1K
220
220
10K
10K
4.7K
4.7K
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α 0°
All Dimensions in mm
A
M
JL
D
B C
H
K
F
R1
R2 R1
R2
DRDN010W/
DRDN005W DRDP006W DRDNB16W/
DRDNB26W DRDPB16W/
DRDPB26W
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 3) PD200 mW
Thermal Resistance, Junction to Ambient Air (Note 3) RθJA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Maximum Ratings, DRDN010W NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCEO 18 V
Emitter-Base Voltage VEBO 5 V
Collector Current (Note 3) IC1000 mA
Maximum Ratings, DRDN005W NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 4.0 V
Collector Current – Continuous (Note 3) IC500 mA
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on page 9 or our website at http://www.diodes.com/datasheets/ap02001.pdf.
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Characteristic Symbol Value Unit ColleCIOrrBase Voltage VCBO 760 V CollecIOrVEmltIer Voltage VCEO 760 V EmitterrBase Voltage VEEO 75 0 V Collector Current (Note 3) IC 7600 mA Characteristic Supply Voltage Input Voltage Output Current Characteristic Supply Voltage Input Voltage Output Current Characteristic Supply Voltage Input Voltage Output Current Characlerislic Supply Voltage Input Voltage Output Current Characteristic Symbol Value Unit Nonrfiepellllve Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Vnnu Working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage Va RMs Reverse Voltage VRIRMSI 53 V Forward Continuous Current mate a) tw 500 mA Average Rectrtred Output Current lNgte at lo 250 mA NonrRepellllve Peak Forward Surge Current @|:1,0lls ‘ 4,0 A @ t : 105 “M 2.0
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Maximum Ratings, DRDP006W PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current (Note 3) IC-600 mA
Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage VCC 50 V
Input Voltage VIN -5 to +10 V
Output Current IC600 mA
Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage VCC 50 V
Input Voltage VIN -5 to +5 V
Output Current IC600 mA
Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage VCC -50 V
Input Voltage VIN +5 to -10 V
Output Current IC600 mA
Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage VCC -50 V
Input Voltage VIN +5 to -5 V
Output Current IC-600 mA
Maximum Ratings, Switching Diode @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current (Note 3) IFM 500 mA
Average Rectified Output Current (Note 3) IO250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s IFSM 4.0
2.0 A
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Electrical Characteristics, DRDN010W NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
DC Current Gain hFE 150 800 IC = 100mA, VCE = 1V
Collector-Emitter Saturation Voltage VCE(SAT) 0.5 V IC = 300mA, IB = 30mA
Collector-Base Breakdown Voltage V(BR)CBO 45 V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 18 V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 100μA, IC = 0
Collector Cutoff Current ICBO 1 μA VCB = 40V, IE = 0
Emitter Cutoff Current IEBO 1 μA VEB = 4V, IC = 0
Current Gain-Bandwidth Product fT100 MHz VCE = 10V, IC = 50mA, f = 100MHz
Capacitance Cobo 8 pF VCB = 10V, IE = 0, f = 1MHz
Electrical Characteristics, DRDN005W NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Collector-Base Breakdown Voltage V(BR)CBO 80 V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 80 V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 4.0 V IE = 100μA, IC = 0
Collector Cutoff Current ICBO 100 nA VCB = 60V, IE = 0
VCB = 80V, IE = 0
Collector Cutoff Current ICES 100 nA VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
DC Current Gain hFE 100 IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) 0.25 V IC = 100mA, IB = 10mA
Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC = 100mA, VCE = 1.0V
Current Gain-Bandwidth Product fT100 MHz VCE = 2.0V, IC = 10mA,
f = 100MHz
Electrical Characteristics, DRDP006W PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
DC Current Gain hFE 100 300 IC = -150mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT) -0.4 V IC = -150mA, IB = -15mA
Collector-Base Breakdown Voltage V(BR)CBO -60 V IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -10μA, IC = 0
Collector Cutoff Current ICBO -10 nA
VCB = -50V, IE = 0
Current Gain-Bandwidth Product fT200 MHz VCE = -20V, IC = -50mA, f = 100MHz
Capacitance Cobo 8 pF VCB = -10V, IE = 0, f = 1MHz
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Vl(off) 0.3 V VCC = 5V, IO = 100μA
Input Voltage Vl(on) 2.0 V VO = 0.3V, IO = 20mA
Output Voltage VO(on) 0.3V V IO/Il = 50mA/2.5mA
Input Current Il 7.2 mA VI = 5V
Output Current IO(off) 0.5 μA VCC = 50V, VI = 0V
DC Current Gain Gl56 VO = 5V, IO = 50mA
Gain-Bandwidth Product fT 200 MHz VCE = 10V, IE = 5mA, f = 100MHz
Characteristic Symbol Min Typ Max Unit Test Condition View 0 5 7 7 V VCC 7 5V, i0 7 iOOpA in t Volta e p” g Vimm 7 7 3.0 V Vo 7 0 3V lo 7 mm Output Voltage VOW, 7 7 0.3V V mm 7 50mAJ2.5mA input Current ll 7 7 25 mA Vi 7 5V Output Current i0mm 7 7 0,5 M VCC 7 50V, V. 7 0V DC Current Gain Gt 47 7 7 7 V - 5th - 50mA Galanandwldlh Product tT 7 200 7 MHZ VCE 710V‘ l 7 am, t 7 iooMl-tz Characteristic Symbol Min Typ Max Unit Test Condition Vim”, 70.3 7 7 V VCC 7 75V lo 7 7100M in t Volta e p“ g Vimm 7 7 72.0 V V 0 3V, lO 7 720mA Output Voltage VOW, 7 7 70.3V V lo/li VSOmA/VZ 5mA input Current ll 7 7 77.2 mA Vi 7 76V Output Current Iotoiti 7 7 '0-5 “A Vcc 7 750Vt Vi = 0V DC Current Gain Gt 56 7 7 7 V0 6V lo 7 750m Galanandwldlh Product tT 7 200 7 MHZ ch 7 710V, lE 7 75m l7 100MHz Characteristic Symbol Min Typ Max Unit Test Condition VM, 70.5 7 7 V Vcc 7 75V lo 7 7100M in t Volta e p” g Vimm 7 7 73.0 V Vo 0,3V, lo 7 720mA Output Voltage VOW, 7 7 70.3V V mm 7 VSOmA/VZ 5mA input Current ll 7 7 725 mA Vi 7 76V Output Current loioitl 7 7 '0‘5 MA Vcc '50Vt Vi = 0V DC Current Gain Gt 47 7 7 7 V0 6V lo 7 750m Galanandwldlh Product tT 7 200 7 MHZ VCE 7 710V, lE 7 75m l7 100MHz Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 4i Vtonrn 75 7 7 iuuA 0 62 0.72 .OmA 7 u 355 (MA Forward Voltage VF 7 “0 V 00m 7 1.25 50m 2.5 pA Va 7 75V so pit Va 7 75V‘ Ti =150’C Reverse Current lNote 4i in 7 30 HA Va 5 25% n = ‘ 50,0 25 nA Total CapaCilanCe cT 7 4.0 pF Reverse Recovery Time t,, 7 4.0 ns 0" X In, W : mm
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Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Vl(off) 0.5 V VCC = 5V, IO = 100μA
Input Voltage Vl(on) 3.0 V VO = 0.3V, IO = 20mA
Output Voltage VO(on) 0.3V V IO/Il = 50mA/2.5mA
Input Current Il 28 mA VI = 5V
Output Current IO(off) 0.5 μA VCC = 50V, VI = 0V
DC Current Gain Gl47 VO = 5V, IO = 50mA
Gain-Bandwidth Product fT 200 MHz VCE = 10V, IE = 5mA, f = 100MHz
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Vl(off) -0.3 V VCC = -5V, IO = -100μA
Input Voltage Vl(on) -2.0 V VO = -0.3V, IO = -20mA
Output Voltage VO(on) -0.3V V IO/Il = -50mA/-2.5mA
Input Current Il -7.2 mA VI = -5V
Output Current IO(off) -0.5 μA VCC = -50V, VI = 0V
DC Current Gain Gl56 VO = -5V, IO = -50mA
Gain-Bandwidth Product fT 200 MHz VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Vl(off) -0.5 V VCC = -5V, IO = -100μA
Input Voltage Vl(on) -3.0 V VO = -0.3V, IO = -20mA
Output Voltage VO(on) -0.3V V IO/Il = -50mA/-2.5mA
Input Current Il -28 mA VI = -5V
Output Current IO(off) -0.5 μA VCC = -50V, VI = 0V
DC Current Gain Gl47 VO = -5V, IO = -50mA
Gain-Bandwidth Product fT 200 MHz VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, Switching Diode @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 4) V(BR)R 75 IR = 10μA
Forward Voltage VF
0.62
0.72
0.855
1.0
1.25
V
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
Reverse Current (Note 4) IR
2.5
50
30
25
μA
μA
μA
nA
VR = 75V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
Total Capacitance CT 4.0 pF VR = 0, f = 1.0MHz
Reverse Recovery Time trr 4.0 ns IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes: 4. Short duration pulse test used to minimize self-heating effect.
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Device Characteristics
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0
50
100
40 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve (Total Device)
A
150
200
250
080 120 160
R = 625°C/W
θ
JA
1
1,000
100
0.0001 0.001 0.01 1 100.1
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (A)
Fig. 2, Typical DC Current Gain
vs. Collector Current (DRDN010W)
C
V = 1.0V
CE
1
100
10
0.1 110 100
C
,
O
U
T
P
U
T
C
A
P
A
C
I
T
AN
C
E (p
F
)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 3, Typical Output Capacitance vs.
Collector-Base Voltage (DRDN010W)
CB
f = 1MHz
1
10
1,000
100
0.0001 0.001 0.01 0.1 110
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (mV)
CE (SAT)
I , COLLECTOR CURRENT (A)
Fig. 4, Typical Collector Saturation Voltage vs.
Collector Current (DRDN010W)
C
I , COLLECTOR-BASE CURRENT (nA)
CBO
T , AMBIENT TEMPERATURE (ºC)
Fig. 5, Typical Collector-Cutoff Current
vs. Ambient Temperature (DRDN005W)
A
10
0.01
0.1
1
25 50 75 100 125
0.001 0.01
I BASE CURRENT (mA)
Fig. 6, Typical Collector Saturation Region
B,
(DRDN005W)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 110 100
V,
C
O
LLE
C
T
O
R
EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
oEmEBoa IfiioonoEEnEanz av 0<50>mt «55 oo. 0<50> O IMP: Em‘ mmktém‘mOFUm 00 mm KOPU 00
110
100 1,000
V,
C
O
LLE
C
T
O
R
-E
M
I
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 7, Typical Collector-Emitter Saturation Voltage
vs. Collector Current (DRDN005W)
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0.050
0
0.100
0.150
0.200
0.250
0.300
0.350
0.400
0.450
0.500
I
I
C
B
= 10
1
10
1,000
10,000
100
110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 8, Typical DC Current Gain vs.
Collector Current (DRDN005W)
C
T = -50°C
A
T = 25°C
A
T = 150°C
A
V = 5V
CE
0.1
0.2
0.1 110
V , BASE-EMI
100
T
T
E
R
O
N V
O
L
T
A
G
E (V)
BE(ON)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V = 5V
CE
I , COLLECTOR CURRENT (mA)
Fig. 9, Typical Base-Emitter On Voltage
vs. Collector Current (DRDN005W)
C
T = -50°C
A
T = 25°C
A
T = 150°C
A
1
10
1,000
100
110
f,
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig. 10, Typical Gain Bandwidth Product vs.
Collector Current (DRDN005W)
C
0
0.1
0.2
0.3
0.6
0.5
0.4
110
100 1,000
I , COLLECTOR CURRENT (mA)
Fig.11, Typical Collector-Emitter Saturation Voltage vs.
Collector Current (DRDP006W)
C
V, C
O
LLECT
O
R
-EMITTE
R
SATURATION VOLTAGE (V)
CE(SAT)
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
I , BASE CURRENT (mA)
Fig. 12, Typical Collector Saturation Region (DRDP006W)
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
0.001 0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 1 10 100
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
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1
10
1,000
100
110100
h, D
1,000
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 13, Typical DC Current Gain vs.
Collector Current (DRDP006W)
C
V = 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 110 100
V , BASE-E
M
I
T
T
E
R
O
N
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 14, Typical Base-Emitter On Voltage
vs. Collector Current (DRDP006W)
C
V = 5V
CE
T = -50°C
A
1
10
1,000
100
110
100
f,
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig. 15, Typical Gain Bandwidth Product vs.
Collector Current (DRDP006W)
C
V = 5V
CE
1.0
5.0
20
10
30
-0.1 -10
-1.0 -30
C
,
C
A
P
A
C
I
T
A
N
C
E (
p
F
)
V , REVERSE VOLTAGE (V)
Fig. 16, Typical Capacitance (DRDP006W)
R
C
ibo
f = 1MHz
10
100
1,000
1
0.1 01.61.20.4 0.8
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 17, Typical Forward Characteristics (Switching Diode)
F
T = -40ºC
A
0.1
1
10
100
1,000
10,000
020 40 60 80 100
V , REVERSE VOLTAGE (V)
Fig. 18, Typical Reverse Characteristics (Switching Diode)
R
I, INS
T
AN
T
ANE
O
U
S
R
EVE
R
SE
C
U
R
R
EN
T
(nA)
R
T = 125ºC
A
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0
0.5
1
2.5
2
1.5
3
0102030 40
C
,
T
O
T
AL
C
A
P
A
C
I
T
A
N
C
E (pF)
T
V , REVERSE VOLTAGE (V)
Fig. 19, Typical Capacitance vs. Reverse Voltage
(Switching Diode)
R
f = 1MHz
Ordering Information (Note 5)
Device Packaging Shipping
DRDN010W-7 SOT-363 3000/Tape & Reel
DRDP006W-7 SOT-363 3000/Tape & Reel
DRDNB16W-7 SOT-363 3000/Tape & Reel
DRDNB26W-7 SOT-363 3000/Tape & Reel
DRDPB16W-7 SOT-363 3000/Tape & Reel
DRDPB26W-7 SOT-363 3000/Tape & Reel
DRDN005W-7 SOT-363 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
RDxx = Product Type Marking Code:
RD01 = DRDN010W
RD02 = DRDP006W
RD03 = DRDNB16W
RD04 = DRDNB26W
RD05 = DRDPB16W
RD06 = DRDPB26W
RD07 = DRDN005W
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
RDxx
YM
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012
Code S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DS30573 Rev. 10 - 2
8 of 9
www.diodes.com DRD (xxxx) W
© Diodes Incorporated
sauegw 21m01m eeeeeee k+% M
Sample Applications
Relay
DRDP006W
R1
R2
RL
Relay
DRDNB16W
1k
Ω
10k
Ω
RL
Relay
DRDN010W/
DRDN005W
R1
R2 RL
DS30573 Rev. 10 - 2
9 of 9
www.diodes.com DRD (xxxx) W
© Diodes Incorporated
Application Example: DRDN010W/DRDN005W current
sink configuration, bias resistors not included Application Example: DRDP006W current source
configuration, bias resistors not included Application Example: DRDNB16W current
sink configuration with built-in bias resistors
Relay
DRDNB26W
220
Ω
4.7k
Ω
RL
Relay
DRDPB26W
220
Ω
4.7k
Ω
RL
Relay
DRDPB16W
1k
Ω
10k
Ω
RL
Application Example: DRDNB26W current sink
configuration with built-in bias resistors (low R1) Application Example: DRDPB16W current source
configuration with built-in bias resistors Application Example: DRDPB26W current source
configuration with built-in bias resistors (low R1)
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
X
Z
Y
C
EE
G
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C 1.9
E 0.65

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