(ifineon/ RoHS / «E Halogen
Id\Q IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
"%&$!"#3 Power-Transistor
Features
P6? ABH>3 A53 C9693 1C9? >4A9E5B1>443 43 ,& ),
P G3 5<<5>C71C53 81A75GR9H"[Z#@A? 4D3 C ( &
P.5AH<? F? >A5B9BC1>3 5R9H"[Z#
P' 3 81>>5<>? A=1<<5E5<
P E1<1>3 85A1C54
P* D1<9695413 3 ? A49>7C? $  )#6? AC1A75C1@@<93 1C9? >B
P)2 6A55@<1C9>7+ ? " ,3 ? =@<91>C
P" 1<? 75>6A5513 3 ? A49>7C? #        
Maximum ratings, 1CTV   S D><5BB? C85AF9B5B@53 96954
Parameter Symbol Conditions Unit
? >C9>D? DB4A19>3 DAA5>C I9T8  S *# 1( 6
T8    S 1(
)D<B544A19>3 DAA5>C
+# I9$\`X^Q T8  S +.(
E1<1>3 855>5A7HB9>7<5@D<B5 E6H I9    R=H  ").- Y@
!1C5B? DA3 5E? <C175 V=H p*( J
)? F5A49BB9@1C9? > P_[_ T8   S )00 K
( @5A1C9>71>4BC? A175C5=@5A1CDA5 TVT^_S      S
# 3 <9=1C93 3 1C57? AH #' #          
*# DAA5>C9B<9=9C542 H2 ? >4F9A5F9C81>R_T@8   % / C853 89@9B12 <5C? 3 1AAH   
+#, 5569
S
DA5
,# 5E93 5? >  ==G  ==G  ==5@? GH) +  F9C8 3 =
*? >5<1H5A  V =C893 ;3 ? @@5A1A516? A4A19>
3 ? >>53 C9? >) 9BE5AC93 1<9>BC9<<19A
Value
)#$ , - 1>4$  ,  
V9H .( J
R ,? >=1G, &   +&/ Y"
I91( 6
Product Summary
Type #)    '   '  ! #) #   '   '  ! #) )   '   '  !
Package E=%ID*.+%+ E=%ID*.*%+ E=%ID**(%+
Marking (+/C(.C (,(C(.C (,(C(.C
@A5E9? DB5>79>55A9>7
B1=@<53 ? 45B
?EE(,cC(.C
?E?(,cC(.C
?E7(,cC(.C
+ 5E   @175        
./ Infineon
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
-85A=1<A5B9BC1>3 5:D>3 C9? >3 1B5 R_T@8 % % (&0 A'K
-85A=1<A5B9BC1>3 5 R_T@6 =9>9=1<6? ? C@A9>C  
:D>3 C9? >1=2 95>C  3 =U 3 ? ? <9>71A51,# % % ,(
Electrical characteristics, 1CTV   S D><5BB? C85AF9B5B@53 96954
Static characteristics
A19>B? DA3 52 A51;4? F>E? <C175 V"7G#9HH V=H  .I9  = .( % % J
!1C5C8A5B8? <4E? <C175 V=H"_T# V9H4V=HI9   V *+,
05A? 71C5E? <C1754A19>3 DAA5>C I9HH
V9H  . V=H  .
TV   S % (&) ) r6
V9H  . V=H  .
TV    S % )( )((
!1C5B? DA3 5<51;1753 DAA5>C I=HH V=H   . V9H  . % ) )(( Z6
A19>B? DA3 5? >BC1C5A5B9BC1>3 5 R9H"[Z# V=H   . I9    % +&+ , Y"
V=H   . I9    
"HB9# % +&( +&/
!1C5A5B9BC1>3 5 R=% )&+ % "
I]MZ^O[ZP`O_MZOQ gR^
fV9Hf5*fI9fR9H"[Z#YMc
I9   .) )*) % H
Values
+ 5E   @175        
./ Infineon
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
#>@DC3 1@13 9C1>3 5 CU^^ % 0((( ))((( \<
( DC@DC3 1@13 9C1>3 5 C[^^ % )/(( *+((
+ 5E5AB5CA1>B65A3 1@13 9C1>3 5 C]^^ % -0 0/
-DA>? >45<1HC9=5 tP"[Z# % +( % Z^
+ 9B5C9=5 t]% /( %
-DA>? 6645<1HC9=5 tP"[RR# % ,( %
1<<C9=5 tR% - %
!1C5 81A
S
5 81A13 C5A9BC93 B
-#
!1C5C? B? DA3 53 81A75 QS^ % ,* % Z8
!1C5C? 4A19>3 81A75 QSP % 1 %
,F9C3 89>73 81A75 Q^b % */ %
!1C53 81A75C? C1< QS% 10 %
!1C5@<1C51DE? <C175 V\XM_QM` % -&+ % J
( DC@DC3 81A75 Q[^^ V99   .V=H  . % /1 % Z8
Reverse Diode
9? 453 ? >C9>? DB6? AF1A43 DAA5>C IH% % 1( 6
9? 45@D<B53 DAA5>C IH$\`X^Q % % +.(
9? 456? AF1A4E? <C175 VH9
V=H  . I<    
TV   S % (&1/ )&* J
+ 5E5AB5A53 ? E5AHC9=5 t]] % )*- % Z^
+ 5E5AB5A53 ? E5AH3 81A75 Q]] % ))( % Z8
-#, 55697DA5  6? A71C53 81A75@1A1=5C5A4569>9C9? >
VG   .#<   
Pi<'Pt     V B
T8  S
Values
V=H  . V9H   . 
f  & " I
V99   . V=H   .
I9   R=   "
V99   . I9    
V=H  C?   .
+ 5E   @175        
@neon
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
1 Power dissipation 2 Drain current
P_[_4R"T8#I94R"T8V=H"  .
3 Safe operating area 4 Max. transient thermal impedance
I94R"V9HT8  S D4( Z_T@84R"t\#
@1A1=5C5At\@1A1=5C5AD4t\'T
 V B
  V B
   V B
 =B
  =B
98
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID[A]
<9=9C542 H? >BC1C5
]Q^U^_MZOQ
B9>7<5@D<B5
(&()
(&(*
(&(-
(&)
(&*
(&-
100
10-1
10-2
10-3
10-4
10-5
100
10-1
10-2
tp[s]
ZthJC [K/W]
0
40
80
120
160
200
0 50 100 150 200
TC[°C]
Ptot [W]
0
20
40
60
80
100
0 50 100 150 200
TC[°C]
ID[A]
+ 5E   @175        
0/. Inflneon HHx \
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I94R"V9HTV  S R9H"[Z#4R"I9TV  S
@1A1=5C5AV=H @1A1=5C5AV=H
7 Typ. transfer characteristics 8 Typ. forward transconductance
I94R"V=HJV9Hf5*fI9fR9H"[Z#YMc gR^4R"I9TV   S
@1A1=5C5ATV
  .
 .   .
 .
  .
 .
 .
  .
0
3
6
9
12
15
0 50 100 150
ID[A]
RDS(on) [m ]
  S
   S
0
80
160
240
320
0 2 4 6
VGS [V]
ID[A]
0
40
80
120
160
200
0 50 100 150
ID[A]
gfs [S]
  .
 .
  .
 .
  .
 .
 .
  .
0
80
160
240
320
012345
VDS [V]
ID[A]
+ 5E   @175        
\ \\
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R9H"[Z#4R"TVI9    V=H   . V=H"_T#4R"TVV=H4V9H
@1A1=5C5AI9
11 Typ. capacitances 12 Forward characteristics of reverse diode
C4R"V9HV=H  .f  & " I I<4R"VH9#
@1A1=5C5ATV
)(J
10!
0
1
2
3
4
5
6
7
8
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [m ]
  V
   V
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
8U^^
8[^^
8]^^
104
103
102
101
0 20 40 60
VDS [V]
C[pF]
  S
   S
  S   
   S   
103
102
101
100
0 0.5 1 1.5 2
VSD [V]
IF[A]
+ 5E   @175        
0/. Inflneon
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
13 Avalanche characteristics 14 Typ. gate charge
I6H4R"t6JR=H  "V=H4R"QSM_QI9   @D<B54
@1A1=5C5ATV"^_M]_# @1A1=5C5AV99
15 Drain-source breakdown voltage 16 Gate charge waveforms
V7G"9HH#4R"TVI9  =
  .
  .
  .
0
2
4
6
8
10
12
0 20 40 60 80 100
Qgate [nC]
VGS [V]
50
55
60
65
70
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS) [V]
V
=H
Q
gate
V
S ^"_T#
Q
S"_T#
Q
S ^
Q
S P
Q
^b
Q
g
  S
   S
   S
1
10
100
1 10 100 1000
tAV [µs]
IAS [A]
+ 5E   @175        
@eon L A w 1: E El [ m "mums“ mans: Mm MAX MIN MAX uocuusm no. A m ‘57 0.159 n «so zaaumam u 1 l7 1 m o 046 n 055 A: 2.15 2 72 one 0 m7 ml: 0 b 0.55 am mm n 034 m 035 1 4n 0 am n ass 2 5 a: 095 1 15 o 031 u 045 a: n as 1 15 o m n ms “ 2-5 c 0.33 an 0.01:: n 024 ' 5...... o «4 a1 15 as 0.583 a m m 5.51 g 45 ems u :72 Ewan," Pmscm" m me 1: 1n man we E 9.70 m as 0.332 n 408 54 650 ma 0 m; n 3:» fl © . 2 w a m \1 u 5 on a mu " 3 3 ISSHE an: m 590 5 9o 0 232 n 272 new,” |. moo um 0.512 0551 LI ~ A.» - a 1:9 WWW IP am us 0.142 n ms 05 a 2 so am a an n 1 m
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
PG-TO220-3
+ 5E   @175        
@neon L2 D1 E! h1 L1 HILLIIETERS MW 4 no ‘ 0 ma 0 535 o 330 mm a son a 7m 5 500 MAX b 572 1 H.004 1 we a non 1.400 n. REFEEENCE JEDEC r0252 a 25 u 75 5mm EUREPEAN PRDJECTIDN 6-@ ISSUE DATE c5425 anus FILE “12524
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
PG-TO262-3 (I²-Pak)
+ 5E   @175        
FOOTPRINT F2 W MILL‘METERS "IDES MIN MAX MIN mx A : so 4.51 mes n 150 Al mm 025 now n ma n 0.55 was ones a 033 DOCIIMENY no. n u 95 1 15 0037 a 045 zxanuunaau c u as ass a me o 02$ «:2 1.17 1H: am a ass SCALE “ D 3.51 9.45 0335 n 312 u no 7.90 am a 311 E e m 10 31 om a too a 5 5 21 5.59 min 0255 u 335 e .54 0.1 m 7 5mm .1 as 5.209 N 1 2 EUROPEAN ansnm n 1461 15 as 0575 u 625 L 2 29 a on u use a we L1 a m 1 ea 0 m n as: L2 1 an 1 n mm a me n as us. 15 25 0332 u w s: a no a so 0356 a an m“ nu: r3 ; so 4 7a a m 0 ms 10mm, r4 IO 7n 1mm um n ozs is 3.35 :1 as 0144 u 152 “WW-l" u «.25 145 0049 u my “1
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
PG-TO263 (D²-Pak)
+ 5E   @175         
/ Inflneon Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of condflions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, lntineon Technologies hereby disclaims any and all warranties and liabilities of any kind. including without limitation. warranties of non- infringement of intellectual property rights 0' any third party. Information For further information on technology. delivery terms and conditions and prices. please contact the nearest lnfineon Technologies Office (www.infinecn.com). Warnings Due to technical requiremenB. components may contain dangerous substances. For information on the types in question. please Contact the nearest lnfineon Technologies Office. The lnlineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of lnfineon Technologies. if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
+ 5E   @175         