MCP1702 Datasheet by Microchip Technology

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2010 Microchip Technology Inc. DS22008E-page 1
MCP1702
Features:
2.0 µA Quiescent Current (typical)
Input Operating Voltage Range: 2.7V to 13.2V
250 mA Output Current for Output Voltages 2.5V
200 mA Output Current for Output Voltages < 2.5V
Low Dropout (LDO) Voltage
- 625 mV typical @ 250 mA (VOUT = 2.8V)
0.4% Typical Output Voltage Tolerance
Standard Output Voltage Options:
- 1.2V, 1.5V, 1.8V, 2.5V, 2.8V,
3.0V, 3.3V, 4.0V, 5.0V
Output Voltage Range 1.2V to 5.5V in 0.1V
Increments (50 mV increments available upon
request)
Stable with 1.0 µF to 22 µF Output Capacitor
Short-Circuit Protection
Overtemperature Protection
Applications:
Battery-powered Devices
Battery-powered Alarm Circuits
Smoke Detectors
•CO
2 Detectors
Pagers and Cellular Phones
Smart Battery Packs
Low Quiescent Current Voltage Reference
•PDAs
•Digital Cameras
Microcontroller Power
Solar-Powered Instruments
Consumer Products
Battery Powered Data Loggers
Related Literature:
AN765, “Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2002
AN766, “Pin-Compatible CMOS Upgrades to
Bipolar LDOs”, DS00766,
Microchip Technology Inc., 2002
AN792, “A Method to Determine How Much
Power a SOT-23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
Description:
The MCP1702 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 250 mA of
current while consuming only 2.0 µA of quiescent
current (typical). The input operating range is specified
from 2.7V to 13.2V, making it an ideal choice for two to
six primary cell battery-powered applications, 9V
alkaline and one or two cell Li-Ion-powered
applications.
The MCP1702 is capable of delivering 250 mA with
only 625 mV (typical) of input to output voltage
differential (VOUT = 2.8V). The output voltage tolerance
of the MCP1702 is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C. Line regulation is ±0.1%
typical at +25°C.
Output voltages available for the MCP1702 range from
1.2V to 5.0V. The LDO output is stable when using only
1 µF of output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and
overtemperature shutdown provide a robust solution
for any application.
Package options include the SOT-23A, SOT-89-3, and
TO-92.
Package Types
1
3
2
VIN
GND VOUT
MCP1702
123
VIN
GND VOUT
MCP1702
3-Pin SOT-23A 3-Pin SOT-89
VIN
3-Pin TO-92
12
VOUT
VIN
GND
Bottom
View
3
250 mA Low Quiescent Current LDO Regulator
\\\\\\\\\\\\\\\\\\\\\ \\\\\\\\\\\\\\\\\\\\
MCP1702
DS22008E-page 2 2010 Microchip Technology Inc.
Functional Block Diagrams
Typical Application Circuits
+
-
MCP1702
VIN VOUT
GND
+VIN
Error Amplifier
Voltage
Reference
Overcurrent
Overtemperature
MCP1702
VIN
CIN
F Ceramic
COUT
F Ceramic
VOUT
VIN
3.3V
IOUT
50 mA
GND
VOUT
9V
Battery
+
2010 Microchip Technology Inc. DS22008E-page 3
MCP1702
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD...............................................................................+14.5V
All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V)
Peak Output Current...................................................500 mA
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature................................... 150°C
ESD protection on all pins (HBM;MM) 4kV; 400V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ of -40°C to +125°C. (Note 7)
Parameters Sym Min Typ Max Units Conditions
Input / Output Characteristics
Input Operating Voltage VIN 2.7 13.2 VNote 1
Input Quiescent Current Iq—2.0 5µA IL = 0 mA
Maximum Output Current IOUT_mA 250 mA For VR 2.5V
50 100 mA For VR < 2.5V, VIN 2.7V
100 130 mA For VR < 2.5V, VIN 2.95V
150 200 mA For VR < 2.5V, VIN 3.2V
200 250 mA For VR < 2.5V, VIN 3.45V
Output Short Circuit Current IOUT_SC 400 mA VIN = VIN(MIN) (Note 1), VOUT = GND,
Current (average current) measured
10 ms after short is applied.
Output Voltage Regulation VOUT VR-3.0% VR±0.4% VR+3.0% VNote 2
VR-2.0% VR±0.4% VR+2.0% V
VR-1.0% VR±0.4% VR+1.0% V 1% Custom
VOUT Temperature
Coefficient
TCVOUT —50ppm/°CNote 3
Line Regulation VOUT/
(VOUTXVIN)
-0.3 ±0.1 +0.3 %/V (VOUT(MAX) + VDROPOUT(MAX))
VIN 13.2V, (Note 1)
Load Regulation VOUT/VOUT -2.5 ±1.0 +2.5 %I
L = 1.0 mA to 250 mA for VR 2.5V
IL = 1.0 mA to 200 mA for VR 2.5V,
VIN = 3.45V (Note 4)
Note 1: The minimum VIN must meet two conditions: VIN2.7V and VIN VOUT(MAX) + VDROPOUT(MAX).
2: VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V. The
input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or VIN = 2.7V (whichever is greater); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
MCP1702
DS22008E-page 4 2010 Microchip Technology Inc.
Dropout Voltage
(Note 1, Note 5)
VDROPOUT 330 650 mV IL = 250 mA, VR = 5.0V
525 725 mV IL = 250 mA, 3.3V VR < 5.0V
625 975 mV IL = 250 mA, 2.8V VR < 3.3V
750 1100 mV IL = 250 mA, 2.5V VR < 2.8V
——mVV
R < 2.5V, See Maximum Output
Current Parameter
Output Delay Time TDELAY 1000 µs VIN = 0V to 6V, VOUT = 90% VR
RL = 50 resistive
Output Noise eN—8µV/(Hz)
1/2 IL = 50 mA, f = 1 kHz, COUT = 1 µF
Power Supply Ripple
Rejection Ratio
PSRR 44 dB f = 100 Hz, COUT = 1 µF, IL = 50 mA,
VINAC = 100 mV pk-pk, CIN = 0 µF,
VR=1.2V
Thermal Shutdown
Protection
TSD — 150 °C
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ of -40°C to +125°C. (Note 7)
Parameters Sym Min Typ Max Units Conditions
Note 1: The minimum VIN must meet two conditions: VIN2.7V and VIN VOUT(MAX) + VDROPOUT(MAX).
2: VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V. The
input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or VIN = 2.7V (whichever is greater); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
2010 Microchip Technology Inc. DS22008E-page 5
MCP1702
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature Range TJ-40 +125 °C Steady State
Maximum Junction Temperature TJ +150 °C Transient
Storage Temperature Range TA-65 +150 °C
Thermal Package Resistance (Note 2)
Thermal Resistance, 3L-SOT-23A JA 336 °C/W EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
JC —110—°C/W
Thermal Resistance, 3L-SOT-89 JA 153.3 °C/W EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
JC 100 — °C/W
Thermal Resistance, 3L-TO-92 JA — 131.9 — °C/W
JC 66.3 — °C/W
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
2: Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging
information.
MCP1702
DS22008E-page 6 2010 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated: VR = 2.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX).
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
FIGURE 2-1: Quiescent Current vs. Input
Voltage.
FIGURE 2-2: Quiescent Current vs.Input
Voltage.
FIGURE 2-3: Quiescent Current vs.Input
Voltage.
FIGURE 2-4: Ground Current vs. Load
Current.
FIGURE 2-5: Ground Current vs. Load
Current.
FIGURE 2-6: Quiescent Current vs.
Junction Temperature.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.00
1.00
2.00
3.00
4.00
5.00
2 4 6 8 10 12 14
Input Voltage (V)
Quiescent Current (µA)
VOUT = 1.2V
+25°C
+130°C
-45°C
0°C
+90°C
0.00
1.00
2.00
3.00
4.00
5.00
35791113
Input Voltage (V)
Quiescent Current (µA)
VOUT = 2.8V
+25°C
+130°C
-45°C
0°C
+90°C
1.00
2.00
3.00
4.00
5.00
67891011121314
Input Voltage (V)
Quiescent Current (µA)
VOUT = 5.0V
+25°C
+130°C
-45°C
0°C
+90°C
0.00
20.00
40.00
60.00
80.00
100.00
120.00
0 40 80 120 160 200
Load Current (mA)
GND Current (µA)
Temperature = +25°C
VOUT = 1.2V
VIN = 2.7V
0.00
20.00
40.00
60.00
80.00
100.00
120.00
0 50 100 150 200 250
Load Current (mA)
GND Current (µA)
Temperature = +25°C
VOUT = 5.0V
VIN = 6.0V
VOUT = 2.8V
VIN = 3.8V
0.00
0.50
1.00
1.50
2.00
2.50
3.00
-45 -20 5 30 55 80 105 130
Junction Temperature (°C)
Quiescent Current (µA)
IOUT
= 0 mA
VOUT = 5.0V
VIN = 6.0V
VOUT = 1.2V
VIN = 2.7V
VOUT = 2.8V
VIN = 3.8V
2010 Microchip Technology Inc. DS22008E-page 7
MCP1702
Note: Unless otherwise indicated: VR = 2.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX).
FIGURE 2-7: Output Voltage vs. Input
Voltage.
FIGURE 2-8: Output Voltage vs. Input
Voltage.
FIGURE 2-9: Output Voltage vs. Input
Voltage.
FIGURE 2-10: Output Voltage vs. Load
Current.
FIGURE 2-11: Output Voltage vs. Load
Current.
FIGURE 2-12: Output Voltage vs. Load
Current.
1.18
1.19
1.20
1.21
1.22
1.23
1.24
2 4 6 8 10 12 14
Input Voltage (V)
Output Voltage (V)
VOUT = 1.2V
ILOAD = 0.1 mA
+25°C
+130°C
-45°C
0°C
+90°C
2.77
2.78
2.79
2.80
2.81
2.82
2.83
2.84
2.85
34567891011121314
Input Voltage (V)
Output Voltage (V)
VOUT = 2.8V
ILOAD = 0.1 mA
+25°C
+130°C
-45°C
0°C
+90°C
4.96
4.98
5.00
5.02
5.04
5.06
67891011121314
Input Voltage (V)
Output Voltage (V)
VOUT = 5.0V
ILOAD = 0.1 mA
+25°C
+130°C
-45°C
0°C
+90°C
1.18
1.19
1.20
1.21
1.22
1.23
0 20406080100
Load Current (mA)
Output Voltage (V)
VOUT = 1.2V
+25°C
+130°C
-45°C
0°C
+90°C
2.77
2.78
2.79
2.80
2.81
2.82
2.83
0 50 100 150 200 250
Load Current (mA)
Output Voltage (V)
VOUT = 2.8V
+25°C
+130°C
-45°C
0°C
+90°C
4.96
4.97
4.98
4.99
5.00
5.01
5.02
5.03
5.04
0 50 100 150 200 250
Load Current (mA)
Output Voltage (V)
VOUT = 5.0V
+25°C
+130°C
-45°C
0°C
+90°C
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MCP1702
DS22008E-page 8 2010 Microchip Technology Inc.
Note: Unless otherwise indicated: VR = 2.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX).
FIGURE 2-13: Dropout Voltage vs. Load
Current.
FIGURE 2-14: Dropout Voltage vs. Load
Current.
FIGURE 2-15: Dropout Voltage vs. Load
Current.
FIGURE 2-16: Dynamic Line Response.
FIGURE 2-17: Dynamic Line Response.
FIGURE 2-18: Short Circuit Current vs.
Input Voltage.
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
100 120 140 160 180 200
Load Current (mA)
Dropout Voltage (V)
VOUT = 1.8V
+25°C
+130°C
-45°C
0°C
+90°C
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
0 25 50 75 100 125 150 175 200 225 250
Load Current (mA)
Dropout Voltage (V)
VOUT = 2.8V
+25°C
+130°C
+0°C
-45°C
+90°C
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0 25 50 75 100 125 150 175 200 225 250
Load Current (mA)
Dropout Voltage (V)
VOUT = 5.0V
+25°C
+130°C
+0°C
-45°C
+90°C
0.00
100.00
200.00
300.00
400.00
500.00
600.00
4 6 8 10 12 14
Input Voltage (V)
Short Circuit Current (mA)
VOUT = 2.8V
ROUT < 0.1
mv
2010 Microchip Technology Inc. DS22008E-page 9
MCP1702
Note: Unless otherwise indicated: VR = 2.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX).
FIGURE 2-19: Load Regulation vs.
Temperature.
FIGURE 2-20: Load Regulation vs.
Temperature.
FIGURE 2-21: Load Regulation vs.
Temperature.
FIGURE 2-22: Line Regulation vs.
Temperature.
FIGURE 2-23: Line Regulation vs.
Temperature.
FIGURE 2-24: Line Regulation vs.
Temperature.
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
0.20
-45 -20 5 30 55 80 105 130
Temperature (°C)
Load Regulation (%)
VOUT = 1.2V
ILOAD = 0.1 mA to 200 mA
VIN = 4V
VIN = 13.2V
VIN = 6V
VIN = 12VVIN = 10V
-0.60
-0.50
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
0.30
0.40
-45 -20 5 30 55 80 105 130
Temperature (°C)
Load Regulation (%)
VOUT = 2.8V
ILOAD
= 1 mA to 250 mA
VIN = 3.8V VIN = 13.2V
VIN = 10V
VIN = 6V
-0.10
0.00
0.10
0.20
0.30
0.40
-45 -20 5 30 55 80 105 130
Temperature (°C)
Load Regulation (%)
VOUT = 5.0V
ILOAD
= 1 mA to 250 mA
VIN = 6V
VIN = 13.2V
VIN = 8V
VIN = 10V
0.00
0.04
0.08
0.12
0.16
0.20
-45 -20 5 30 55 80 105 130
Temperature (°C)
Line Regulation (%/V)
VOUT = 1.2V
VIN
= 2.7V to 13.2V
1 mA
100 mA
0 mA
0.00
0.04
0.08
0.12
0.16
0.20
-45 -20 5 30 55 80 105 130
Temperature (°C)
Line Regulation (%/V)
VOUT = 2.8V
VIN = 3.8V to 13.2V
200 mA
100 mA
0 mA
250 mA
0.06
0.08
0.10
0.12
0.14
0.16
-45 -20 5 30 55 80 105 130
Temperature (°C)
Line Regulation (%/V)
VOUT = 5.0V
VIN = 6.0V to 13.2V
200 mA
100 mA
0 mA 250 mA
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MCP1702
DS22008E-page 10 2010 Microchip Technology Inc.
Note: Unless otherwise indicated: VR = 2.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX).
FIGURE 2-25: Power Supply Ripple
Rejection vs. Frequency.
FIGURE 2-26: Power Supply Ripple
Rejection vs. Frequency.
FIGURE 2-27: Output Noise vs. Frequency.
FIGURE 2-28: Power Up Timing.
FIGURE 2-29: Dynamic Load Response.
FIGURE 2-30: Dynamic Load Response.
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000
Frequency (kHz)
PSRR (dB)
VR=1.2V
COUT=1.0 μF ceramic X7R
VIN=2.7V
CIN=0 μF
IOUT=1.0 mA
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000
Frequency (kHz)
PSRR (dB)
VR=5.0V
COUT=1.0 μF ceramic X7R
VIN=6.0V
CIN=0 μF
IOUT=1.0 mA
0.001
0.01
0.1
1
10
100
0.01 0.1 1 10 100 1000
Frequency (kHz)
Noise (μV/Hz)
VR=5.0V, VIN=6.0V IOUT=50 mA
VR=2,8V, VIN=3.8V
VR=1.2V, VIN=2.7V
2010 Microchip Technology Inc. DS22008E-page 11
MCP1702
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Ground Terminal (GND)
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
Only the LDO bias current (2.0 µA typical) flows out of
this pin; there is no high current. The LDO output
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the
load.
3.2 Regulated Output Voltage (VOUT)
Connect VOUT to the positive side of the load and the
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO VOUT pin as is practical.
The current flowing out of this pin is equal to the DC
load current.
3.3 Unregulated Input Voltage Pin
(VIN)
Connect VIN to the input unregulated source voltage.
Like all LDO linear regulators, low source impedance is
necessary for the stable operation of the LDO. The
amount of capacitance required to ensure low source
impedance will depend on the proximity of the input
source capacitors or battery type. For most
applications, 1 µF of capacitance will ensure stable
operation of the LDO circuit. For applications that have
load currents below 100 mA, the input capacitance
requirement can be lowered. The type of capacitor
used can be ceramic, tantalum or aluminum
electrolytic. The low ESR characteristics of the ceramic
will yield better noise and PSRR performance at
high-frequency.
Pin No.
SOT-23A
Pin No.
SOT-89
Pin No.
TO-92 Symbol Function
1 1 1 GND Ground Terminal
233V
OUT Regulated Voltage Output
32, Tab2 V
IN Unregulated Supply Voltage
NC No connection
MCP1702
DS22008E-page 12 2010 Microchip Technology Inc.
4.0 DETAILED DESCRIPTION
4.1 Output Regulation
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal band gap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to Figure 4-1).
4.2 Overcurrent
The MCP1702 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short-circuit or excessive output
current, the MCP1702 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.
4.3 Overtemperature
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature will rise
above the typical shutdown threshold of 150°C. At that
point, the LDO will shut down and begin to cool to the
typical turn-on junction temperature of 130°C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
FIGURE 4-1: Block Diagram.
+
-
MCP1702
VIN VOUT
GND
+VIN
Error Amplifier
Voltage
Reference
Overcurrent
Overtemperature
2010 Microchip Technology Inc. DS22008E-page 13
MCP1702
5.0 FUNCTIONAL DESCRIPTION
The MCP1702 CMOS LDO linear regulator is intended
for applications that need the lowest current
consumption while maintaining output voltage
regulation. The operating continuous load range of the
MCP1702 is from 0 mA to 250 mA (VR 2.5V). The
input operating voltage range is from 2.7V to 13.2V,
making it capable of operating from two or more
alkaline cells or single and multiple Li-Ion cell batteries.
5.1 Input
The input of the MCP1702 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
capacitor needed depends heavily on the input source
type (battery, power supply) and the output current
range of the application. For most applications (up to
100 mA), a 1 µF ceramic capacitor will be sufficient to
ensure circuit stability. Larger values can be used to
improve circuit AC performance.
5.2 Output
The maximum rated continuous output current for the
MCP1702 is 250 mA (VR 2.5V). For applications
where VR < 2.5V, the maximum output current is
200 mA.
A minimum output capacitance of 1.0 µF is required for
small signal stability in applications that have up to
250 mA output current capability. The capacitor type
can be ceramic, tantalum or aluminum electrolytic. The
esr range on the output capacitor can range from 0 to
2.0.
The output capacitor range for ceramic capacitors is
1 µF to 22 µF. Higher output capacitance values may
be used for tantalum and electrolytic capacitors. Higher
output capacitor values pull the pole of the LDO
transfer function inward that results in higher phase
shifts which in turn cause a lower crossover frequency.
The circuit designer should verify the stability by
applying line step and load step testing to their system
when using capacitance values greater than 22 µF.
5.3 Output Rise Time
When powering up the internal reference output, the
typical output rise time of 500 µs is controlled to
prevent overshoot of the output voltage. There is also a
start-up delay time that ranges from 300 µs to 800 µs
based on loading. The start-up time is separate from
and precedes the Output Rise Time. The total output
delay is the Start-up Delay plus the Output Rise time.
% H
MCP1702
DS22008E-page 14 2010 Microchip Technology Inc.
6.0 APPLICATION CIRCUITS AND
ISSUES
6.1 Typical Application
The MCP1702 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage makes it ideal for many battery-powered
applications.
FIGURE 6-1: Typical Application Circuit.
6.1.1 APPLICATION INPUT CONDITIONS
6.2 Power Calculations
6.2.1 POWER DISSIPATION
The internal power dissipation of the MCP1702 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(2.0 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The maximum continuous operating junction
temperature specified for the MCP1702 is +125°C. To
estimate the internal junction temperature of the
MCP1702, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (RJA). The thermal resistance from junction to
ambient for the SOT-23A pin package is estimated at
336°C/W.
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
EQUATION 6-5:
Package Type = SOT-23A
Input Voltage Range = 2.8V to 3.2V
VIN maximum = 3.2V
VOUT typical = 1.8V
IOUT = 150 mA maximum
MCP1702
GND
VOUT
VIN CIN
1 µF Ceramic
COUT
F Ceramic
VOUT
VIN
(2.8V to 3.2V)
1.8V
IOUT
150 mA
PLDO VIN MAX
VOUT MIN
IOUT MAX
=
Where:
PLDO = LDO Pass device internal
power dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
TJMAX
PTOTAL RJA
TAMAX
+=
Where:
TJ(MAX) = Maximum continuous junction
temperature
PTOTAL = Total device power dissipation
RJA Thermal resistance from
junction to ambient
TAMAX = Maximum ambient temperature
PDMAX
TJMAX
TAMAX

RJA
---------------------------------------------------=
Where:
PD(MAX) = Maximum device power
dissipation
TJ(MAX) = Maximum continuous junction
temperature
TA(MAX) Maximum ambient temperature
RJA = Thermal resistance from
junction to ambient
TJRISE
PDMAX
RJA
=
Where:
TJ(RISE) = Rise in device junction
temperature over the ambient
temperature
PTOTAL = Maximum device power
dissipation
RJA Thermal resistance from
junction to ambient
TJTJRISE
TA
+=
Where:
TJ= Junction Temperature
TJ(RISE) = Rise in device junction
temperature over the ambient
temperature
TAAmbient temperature
5
2010 Microchip Technology Inc. DS22008E-page 15
MCP1702
6.3 Voltage Regulator
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
6.3.1 POWER DISSIPATION EXAMPLE
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (RJA) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an
Application”, (DS00792), for more information
regarding this subject.
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
Maximum Package Power Dissipation at +40°C
Ambient Temperature Assuming Minimal Copper
Usage.
6.4 Voltage Reference
The MCP1702 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1702 LDO. The low-cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1702 as a voltage
reference.
FIGURE 6-2: Using the MCP1702 as a
Voltage Reference.
Package
Package Type = SOT-23A
Input Voltage
VIN = 2.8V to 3.2V
LDO Output Voltages and Currents
VOUT =1.8V
IOUT =150mA
Maximum Ambient Temperature
TA(MAX) =+40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PLDO(MAX) =(V
IN(MAX) - VOUT(MIN)) x
IOUT(MAX)
PLDO = (3.2V - (0.97 x 1.8V)) x 150 mA
PLDO = 218.1 milli-Watts
TJ(RISE) =P
TOTAL x RqJA
TJRISE = 218.1 milli-Watts x 336.0°C/Watt
TJRISE = 73.3°C
TJ=T
JRISE + TA(MAX)
TJ=113.3°C
SOT-23 (336.0°C/Watt = RJA)
PD(MAX) = (+125°C - 40°C) / 336°C/W
PD(MAX) = 253 milli-Watts
SOT-89 (153.3°C/Watt = RJA)
PD(MAX) = (+125°C - 40°C) / 153.3°C/W
PD(MAX) = 0.554 Watts
TO92 (131.9°C/Watt = RJA)
PD(MAX) = (+125°C - 40°C) / 131.9°C/W
PD(MAX) = 644 milli-Watts
PIC®
MCP1702
GND
VIN
CIN
F COUT
F
Bridge Sensor
VOUT VREF
ADO
AD1
Ratio Metric Reference
2 µA Bias Microcontroller
MCP1702
DS22008E-page 16 2010 Microchip Technology Inc.
6.5 Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1702. The internal
current limit of the MCP1702 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1702. The typical current limit for the
MCP1702 is 500 mA (TA +25°C).
TC‘
2010 Microchip Technology Inc. DS22008E-page 17
MCP1702
7.0 PACKAGING INFORMATION
7.1 Package Marking Information
3-Pin SOT-23A
XXNN
Standard
Extended Temp
Symbol Voltage * Symbol Voltage *
HA 1.2 HF 3.0
HB 1.5 HG 3.3
HC 1.8 HH 4.0
HD 2.5 HJ 5.0
HE 2.8
Custom
GA 4.5 GC 2.1
GB 2.2 GD 4.1
* Custom output voltages available upon request.
Contact your local Microchip sales office for more information.
Example:
HANN
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
Standard
Extended Temp
Symbol Voltage * Symbol Voltage *
HA 1.2 HF 3.0
HB 1.5 HG 3.3
HC 1.8 HK 3.6
HD 2.5 HH 4.0
HE 2.8 HJ 5.0
Custom
LA2.1H94.2
LB 3.2
* Custom output voltages available upon request.
Contact your local Microchip sales office for more information.
3-Lead SOT-89
XXXYYWW
NNN
Example:
HA1014
256
3-Lead TO-92
XXXXXX
XXXXXX
XXXXXX
YWWNNN
Example:
1702
1202E
TO^^
014256
3
e
MCP1702
DS22008E-page 18 2010 Microchip Technology Inc.
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3-Lead Plastic Small Outline Transistor (CB) [SOT-23A] X I 7 7 I y 2 C G | | | —— E <— stlk="" screen="" recommended="" land="" pattern="" unlls="" mtllimeters="" dtmenston="" ltmtts="" mtn="" \="" nom="" |="" max="" contact="" phch="" e="" u="" 95="" 550="" contact="" pad="" spaclng="" c="" 2="" 70="" contact="" pad="" wtdtn="" (x3)="" x="" o="" 60="" contact="" pad="" length="" (x3)="" v="" 1="" 00="" dtstance="" between="" pads="" g="" 1="" 70="" overalt="" wow="" 2="" 3="" 7o="" notes="" i="" dtmensionmg="" and="" ioleranctng="" per="" asme="" ym="" 5m="" esc.="" bastc="" dtmension="" theoretical‘y="" exact="" vatue="" shown="" wt|houl="" ioleranoes.="" mtcrocnip="" tecnnotogy="" drawing="" no="" (30472130a="">
2010 Microchip Technology Inc. DS22008E-page 19
MCP1702
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
MCP1702
DS22008E-page 20 2010 Microchip Technology Inc.
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3-Lead Plastic Small Outline Transistor Header (MB) [SOT-89] K v2 \J 45" ‘ 5le TYP SCREEN W I J X2 L X1 X1 if E +« E A RECOMMENDED LAND PATTERN Unils MILLIMETERS Dimensmn leils MlN l NOM l MAX Camael Pilch E 1.50 asc Comael Pads l a a Widlh x1 0.43 Canlact Pad 2 WW x2 0.56 Heal Slug Pad wlom x3 1 20 Cunlact Pads ’l & 3 Lenglh Y1 l 40 Cunlact 2 Fad Lenglh Y2 4 25 - K 2 60 2 55 Notes 1. Dlmenslonlrlg and toleranclng per ASME Y14.5M BSC: 83le Dlmension. Thearetically exacl value snown without tolerances. Mlcmchlp Technology Drawing No GOA-2029A
2010 Microchip Technology Inc. DS22008E-page 21
MCP1702
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
MCP1702
DS22008E-page 22 2010 Microchip Technology Inc.
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2010 Microchip Technology Inc. DS22008E-page 23
MCP1702
APPENDIX A: REVISION HISTORY
Revision E (November 2010)
The following is the list of modifications:
1. Updated the Thermal Resistance Typical value
for the SOT-89 package in the Junction
Temperature Estimate section.
Revision D (June 2009)
The following is the list of modifications:
1. DC Characteristics table: Updated the VOUT
Temperature Coefficient’s maximum value.
2. Section 7.0 “Packaging Information”:
Updated package outline drawings.
Revision C (November 2008)
The following is the list of modifications:
1. DC Characteristics table: Added row to Output
Voltage Regulation for 1% custom part.
2. Temperature Specifications table: Numerous
changes to table.
3. Added Note 2 to Temperature Specifications
table.
4. Section 5.0 “Functional Description”,
Section 5.2 “Output”: Added second
paragraph.
5. Section 7.0 “Packaging Information”: Added
1% custom part information to this section. Also,
updated package outline drawings.
6. Product Identification System: Added 1%
custom part information to this page.
Revision B (May 2007)
The following is the list of modifications:
1. All Pages: Corrected minor errors in document.
2. Page 4: Added junction-to-case information to
Temperature Specifications table.
3. Page 16: Updated Package Outline Drawings in
Section 7.0 “Packaging Information”.
4. Page 21: Updated Revision History.
5. Page 23: Corrected examples in Product
Identification System.
Revision A (September 2006)
Original Release of this Document.
PART No. v x- 44x 44x
MCP1702
DS22008E-page 24 2010 Microchip Technology Inc.
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV = ISO/TS “5949:2002 =
2010 Microchip Technology Inc. DS22008E-page 25
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2010, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-60932-690-6
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
6‘ MICRDCHIP AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE
DS22008E-page 26 2010 Microchip Technology Inc.
AMERICAS
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Fax: 86-21-5407-5066
China - Shenyang
Tel: 86-24-2334-2829
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Tel: 86-755-8203-2660
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Worldwide Sales and Service
08/04/10

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