© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 200 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C - 30 A
IDM TC= 25°C, pulse width limited by TJM -144 A
IAR TC= 25°C - 48 A
EAS TC= 25°C 2.5 J
dV/dt IS IDM, VDD VDSS, TJ 150°C 10 V/ns
PDTC= 25°C 190 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
VISOL 50/60 Hz, RMS t = 1min 2500 V~
IISOL 1mA t = 1s 3000 V~
MdMounting force 20..120 / 4.5..27 N/lb.
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 200 V
VGS(th) VDS = VGS, ID = - 250μA - 2.5 - 4.5 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS - 25 μA
VGS = 0V TJ = 125°C - 200 μA
RDS(on) VGS = -10V, ID = - 24A, Note 1 93 mΩ
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR48P20P VDSS = - 200V
ID25 = - 30A
RDS(on)
93mΩΩ
ΩΩ
Ω
Preliminary Technical Information
G = Gate D = Drain
S = Source
Isolated Tab
ISOPLUS247 (IXTR)
E153432
DS99982(5/08)
Features
zSilicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
zAvalanche rated
zThe rugged PolarPTM process
zLow QG
zLow Drain-to-Tab capacitance
zLow package inductance
- easy to drive and to protect
Applications
zHigh side switching
zPush-pull amplifiers
zDC Choppers
zAutomatic test equipment
zLoad-Switch Application
zFuel Injection Systems
-I IXYS ha 5 7 [#‘fl-‘t J:h } fl h [17 7 71E , 7 7‘ LLE T 7 w E [NE 7 H E n m: w hm. dhdmhmu Hmm n my“, ,,‘ ‘7 m
IXTR48P20P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
ISOPLUS247 (IXTR) Outline
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = -10V, ID = - 24A, Note 1 19 32 S
Ciss 5400 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 1040 pF
Crss 170 pF
td(on) 30 ns
tr 46 ns
td(off) 67 ns
tf 27 ns
Qg(on) 103 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = - 24A 23 nC
Qgd 40 nC
RthJC 0.66 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
ISVGS = 0V - 48 A
ISM Repetitive, pulse width limited by TJM -192 A
VSD IF = - 24A, VGS = 0V, Note 1 - 3.3 V
trr 260 ns
QRM 4.2 μC
IRM - 32.2 A
IF = - 24A, -di/dt = -150A/μs
VR = -100V, VGS = 0V
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = - 24A
RG = 3Ω (External)
\u A Arrperes 75v 00 4o 720 730 740 750 760 ,70 750 VDS-ths E E 2 Rusmm A Nuvrnahzsd © 2008 \XVS CORPOHA‘HON‘ AH thls reserved
© 2008 IXYS CORPORATION, All rights reserved
IXTR48P20P
Fig. 1. Output Characteristics
@ 25ºC
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 5
V
- 6
V
- 7
V
Fig. 2. Extended Output Characteristics
@ 25ºC
-160
-140
-120
-100
-80
-60
-40
-20
0
-30-27-24-21-18-15-12-9-6-30
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8
V
- 6
V
- 7
V
- 5
V
Fig. 3. Output Characteristics
@ 125ºC
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-8.0-7.0-6.0-5.0-4.0-3.0-2.0-1.00.0
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 6
V
- 5
V
- 7
V
Fig. 4. R
DS(on)
Normalized to I
D
= - 24A vs.
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= - 48
A
I
D
= - 24
A
Fig. 5. R
DS(on)
Normalized to I
D
= - 24A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-160-140-120-100-80-60-40-200
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
-33
-30
-27
-24
-21
-18
-15
-12
-9
-6
-3
0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
I
D
- Amperes
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IXTR48P20P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 7. Input Admittance
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-7.5-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5
V
GS
- Volts
I
D
- Amperes
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
55
60
-90-80-70-60-50-40-30-20-100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
-160
-140
-120
-100
-80
-60
-40
-20
0
-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 102030405060708090100110
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= -100V
I
D
= - 24A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
---
100ms
-
-
-
:I IXYS
© 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_48P20P(B7) 5-13-08
IXTR48P20P
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W

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