PSMN2R0-30YL Datasheet by Nexperia USA Inc.

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Fxgure1 e Figure 3 Figure 2 9 Figure 14 Figure 15 nexpefla
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
Class-D amplifiers
DC-to-DC converters
Motor control
Server power supplies
1.4 Quick reference data
PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
Rev. 4 — 10 March 2011 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source
voltage Tj25 °C; Tj175°C --30V
IDdrain current Tmb =2C; V
GS =10V;
see Figure 1; see Figure 3
[1] --100A
Ptot total power
dissipation Tmb = 25 °C; see Figure 2 --97W
Tjjunction
temperature -55 - 175 °C
Static characteristics
RDSon drain-source
on-state
resistance
VGS =10V; I
D=15A;
Tj=2C -1.552m
Dynamic characteristics
QGD gate-drain charge VGS =4.5V; I
D=10A;
VDS =12V; see Figure 14;
see Figure 15
-7.5-nC
9 Figure 14 a mm: a v 1m7 Al mm mm
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 2 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
[1] Continuous current is limited by package.
2. Pinning information
3. Ordering information
QG(tot) total gate charge VGS =4.5V; I
D=10A;
VDS =12V; see Figure 14 -30-nC
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; T
j(init) =2C;
ID=100A; V
sup 30 V;
RGS =50; unclamped
--151mJ
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1Ssource
SOT669 (LFPAK)
2Ssource
3Ssource
4 G gate
mb D mounting base; connected to
drain
mb
1234
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
PSMN2R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Figure 1 7 e Figure 1 7 Figure 3 Figure 3 e Figure 2 V 210 V' 1 Ca ed at 100A due [0 acka e. P Gs ,(l pp p 2; PAN): wr x100% rmizS‘Ci am.“ av mu m um; mm
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 3 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
4. Limiting values
[1] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj25 °C; Tj175 °C - 30 V
VDSM peak drain-source voltage tp25 ns; f 500 kHz;
EDS(AL) 280 nJ; pulsed -35V
VDGR drain-gate voltage Tj25 °C; Tj175 °C; RGS =20k-30V
VGS gate-source voltage -20 20 V
IDdrain current VGS =10V; T
mb = 100 °C; see Figure 1 [1] - 100 A
VGS =10V; T
mb =2C; see Figure 1;
see Figure 3
[1] - 100 A
IDM peak drain current pulsed; tp10 µs; Tmb =2C;
see Figure 3 - 667 A
Ptot total power dissipation Tmb =2C; see Figure 2 -97W
Tstg storage temperature -55 175 °C
Tjjunction temperature -55 175 °C
Source-drain diode
ISsource current Tmb =2C [1] - 100 A
ISM peak source current pulsed; tp10 µs; Tmb = 25 °C - 667 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy VGS =10V; T
j(init) =2C; I
D= 100 A;
Vsup 30 V; RGS =50; unclamped - 151 mJ
Fig 1. Continuous drain current as a function of
mounting base temperature Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac471
0
20
40
60
80
100
120
0 50 100 150 200
Tmb (°C)
ID
(A) (1)
Tmb (°C)
0 20015050 100
03aa16
40
80
120
Pder
(%)
0
Tm, : 25 “C;IDMis single pulse (1) Capped at 100A due to package. Figure 4 :N-xplnaBV zuw mum 15mg
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 4 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
5. Thermal characteristics
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aac529
1
10
10
2
10
3
10
-1
1 10 10
2
V
DS
(V)
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
100 μs
10 μs
100 ms
10 ms
1 ms
(1)
DC
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from
junction to mounting base see Figure 4 - 0.4 1.28 K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aac481
single shot
0.2
0.1
0.05
0.02
10
-3
10
-2
10
-1
1
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ = 0.5
tp
T
P
t
tp
T
δ =
Figure 11 see Figure 12 Figure 12 Figure 12 Figure 13 Figure 14 Figure 15 Figure 14 Figure 14 Figure 15 Figure 14 Figure 15 Figure 16 "awn—Alnmggm
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 5 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage ID=25A; V
GS =0V; T
j=25°C 30--V
ID=25A; V
GS =0V; T
j= -55 °C 27 - - V
VGS(th) gate-source threshold
voltage ID=1mA; V
DS =V
GS; Tj=2C;
see Figure 11; see Figure 12 1.3 1.7 2.15 V
ID=1mA; V
DS =V
GS; Tj= 150 °C;
see Figure 12 0.65 - - V
ID=1mA; V
DS =V
GS; Tj=-5C;
see Figure 12 --2.45V
IDSS drain leakage current VDS =30V; V
GS =0V; T
j=25°C --1µA
VDS =30V; V
GS =0V; T
j= 150 °C - - 100 µA
IGSS gate leakage current VGS =16V; V
DS =0V; T
j= 25 °C - - 100 nA
VGS =-16V; V
DS =0V; T
j= 25 °C - - 100 nA
RDSon drain-source on-state
resistance VGS =4.5V; I
D=15A; T
j= 25 °C - 2.13 2.63 m
VGS =10V; I
D=15A; T
j= 150 °C;
see Figure 13 --3.3m
VGS =10V; I
D=15A; T
j= 25 °C - 1.55 2 m
RGgate resistance f = 1 MHz - 0.75 1.5
Dynamic characteristics
QG(tot) total gate charge ID=10A; V
DS =12V; V
GS =10V;
see Figure 14; see Figure 15 -64-nC
ID=0A; V
DS =0V; V
GS =10V - 59 - nC
ID=10A; V
DS =12V; V
GS =4.5V;
see Figure 14 -30-nC
QGS gate-source charge ID=10A; V
DS =12V; V
GS =4.5V;
see Figure 14; see Figure 15 -9.8-nC
QGS(th) pre-threshold
gate-source charge -6.6-nC
QGS(th-pl) post-threshold
gate-source charge -3.2-nC
QGD gate-drain charge - 7.5 - nC
VGS(pl) gate-source plateau
voltage VDS =12V; see Figure 14;
see Figure 15 -2.34-V
Ciss input capacitance VDS =12V; V
GS = 0 V; f = 1 MHz;
Tj=2C; see Figure 16 - 3980 - pF
Coss output capacitance - 857 - pF
Crss reverse transfer
capacitance - 347 - pF
td(on) turn-on delay time VDS =12V; R
L=0.5; VGS =4.5V;
RG(ext) =4.7
-39-ns
trrise time - 65 - ns
td(off) turn-off delay time - 63 - ns
tffall time - 28 - ns
Figure 17 \ \ VD5:10V I,:25=c;r,,:300px I, : 25“C;t,,:300ux T; = 25°C;VDs : 15V am.“ av mu m um; Wm
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 6 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
Source-drain diode
VSD source-drain voltage IS=25A; V
GS =0V; T
j=2C;
see Figure 17 - 0.78 1.2 V
trr reverse recovery time IS=20A; dI
S/dt = -100 A/µs; VGS =0V;
VDS =20V -43-ns
Qrrecovered charge - 49 - nC
Table 6. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values Fig 8. Forward transconductance as a function of
drain current; typical values
003aac470
0
20
40
60
80
0123
V
GS
(V)
I
D
(A)
T
j
= 150 °C
25 °C
003aac474
0
50
100
150
0246810
V
DS
(V)
I
D
(A)
2.2
2.4
2.6
2.8
V
GS
(V) = 3
4
10
003aac475
1
2
3
4
5
6
7
0 50 100 150
I
D
(A)
R
DSon
(mΩ)
V
GS
(V) = 3 V
4
10
003aac477
40
60
80
100
120
140
160
020406080
I
D
(A)
g
fs
(S)
VHS = our = lMHz T, = 25°C;ID = 15A I, : 25°C;VDS : 5v / / /// /// \ \ ID = 1111A;VD5 = V55 “mp.“ av mu an MS 15mg
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 7 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
Fig 9. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 11. Sub-threshold drain current as a function of
gate-source voltage Fig 12. Gate-source threshold voltage as a function of
junction temperature
003aac480
0
2000
4000
6000
8000
0246810
V
GS
(V)
C
(pF) C
iss
C
rss
003aac476
1.5
2
2.5
3
3.5
4
246810
V
GS
(V)
R
DSon
(mΩ)
003aab271
10-6
10-5
10-4
10-3
10-2
10-1
0123
VGS (V)
ID
(A)
maxtypmin
003aac337
0
1
2
3
-60 0 60 120 180
Tj (°C)
VGS(th)
(V)
max
typ
min
RDSOVI ‘1 = R— DSm‘KZS'C) T, : 25°C;ID :10A V55 :0V;f: 1MHZ “mp.“ av mu an MS 15mg
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 8 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03aa27
0
0.5
1
1.5
2
60 0 60 120 180
Tj (°C)
a
003aaa5
08
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
003aac473
0
2
4
6
8
10
020406080
Q
G
(nC)
V
GS
(V)
V
DS
= 19 (V)
V
DS
= 12 (V)
003aac478
0
1000
2000
3000
4000
5000
10
-1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
v55=ov am.“ av mu m um; vumfl
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 9 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
003aac469
0
20
40
60
80
100
0.0 0.2 0.4 0.6 0.8 1.0
V
SD
(V)
I
S
(A)
T
j
= 150 °C
25 °C
moummg base \ I o 25 5mm sca‘e DIMENSIONS (mm are (he angmal dimensmns) 1 UNIT A A1 A2 A; n :22 b: h. c :2 DmDI"EmE‘m g H L L1 L2 w y max 120 015 no 050 AM 22 09 025 030 Am 50 53 62 035 ‘5 ‘3 M 101000 095 025 035 362 20 07 am 024 350 42° 43 5‘ ‘27 55 040 as on 025 0‘ REFERENCES OUTLINE EUROPEAN VER5'0" IEc JEDEC JEITA PROJECTION '55“ DATE soTesa M07235 E» @ 09670594 2 Fig 18. Package outline SOT669 (LFPAK) pswmmm Mmmvmifiuupmvmlnmlmsdnzumen"xsumac"u‘lgi‘d‘xdmmev: :Nupmav 2m: N‘ughls 15mg Producl data sheel Rev. 4 — 10 March 2011 ID
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 10 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
7. Package outline
Fig 18. Package outline SOT669 (LFPAK)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT669 MO-235 04-10-13
06-03-16
0 2.5 5 mm
scale
e
E1
b
c2
A2
A2bcA e
UNIT
DIMENSIONS (mm are the original dimensions)
mm 1.10
0.95
A3
A1
0.15
0.00
1.20
1.01
0.50
0.35
b2
4.41
3.62
b3
2.2
2.0
b4
0.9
0.7
0.25
0.19
c2
0.30
0.24
4.10
3.80
6.2
5.8
H
1.3
0.8
L2
0.85
0.40
L
1.3
0.8
L1
8°
0°
wy
D(1)
5.0
4.8
E(1)
3.3
3.1
E1(1)
D1(1)
max
0.25 4.20 1.27 0.25 0.1
1234
mounting
base
D1
c
P
lastic single-ended surface-mounted package (LFPAK); 4 leads SOT66
9
E
b2
b3
b4
HD
L2
L1
A
A
wM
C
C
X
1/2 e
yC
θ
θ
(A )
3
L
A
A1
detail X
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
alum av 1m7 "mum“...
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 11 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PSMN2R0-30YL v.4 20110310 Product data sheet - PSMN2R0-30YL_3
Modifications: Various changes to content.
PSMN2R0-30YL_3 20090105 Product data sheet - PSMN2R0-30YL_2
//www m arm a mwln- a v Inn A. mm; mm
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 12 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
mtg /www.nex9eria salesaddresses©nexgeria alum av 1m7 "mum“...
© Nexperia B.V. 2017. All rights reserved
PSMN2R0-30YL All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 10 March 2011 13 of 14
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Nexperia PSMN2R0-30YL
N-channel 30 V 2 m logic level MOSFET in LFPAK
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10 Contact information. . . . . . . . . . . . . . . . . . . . . .13
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
10 March 2011

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