SI4116DY Datasheet by Vishay Siliconix

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VISHAY. RoHS comm“ macs" www I5hay.com/doc?99912 FREE OJ N-Channel MOSFET pmosmcnsuggomiwshaymm www.v\shay,com/doc?91000
Si4116DY
www.vishay.com Vishay Siliconix
S-83046-Rev. C, 22-Dec-08 1Document Number: 69837
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 25 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
100 % Rg and UIS tested
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Synchronous buck
- Low side
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 95 °C/W
PRODUCT SUMMARY
VDS (V) 25
RDS(on) max. () at VGS = 10 V 0.0086
RDS(on) max. () at VGS = 4.5 V 0.0095
RDS(on) max. () at VGS = 2.5 V 0.0115
Qg typ. (nC) 17.5
ID (A) a18
Configuration Single
Top View
SO-8 Single
1
S
2
S
3
S
1
2
S
3
S
4
G
D
7
D
6
D
5
D
8
Available
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package SO-8
Lead (Pb)-free Si4116DY-T1-E3
Lead (Pb)-free and halogen-free Si4116DY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 25 V
Gate-source voltage VGS ± 12
Continuous drain current (TJ = 150 °C)
TC = 25 °C
ID
18
A
TC = 70 °C 14.3
TA = 25 °C 12.7 b, c
TA = 70 °C 10.1 b, c
Pulsed drain current IDM 50
Continuous source-drain diode current TC = 25 °C IS
4.5
TA = 25 °C 2.2 b, c
Single pulse avalanche current L = 0.1 mH IAS 20
Avalanche energy EAS 20 mJ
Maximum power dissipation
TC = 25 °C
PD
5
W
TC = 70 °C 3.2
TA = 25 °C 2.5 b, c
TA = 70 °C 1.6 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d t 10 s RthJA 43 50 °C/W
Maximum junction-to-foot (drain) Steady state RthJF 19 25
VISHAY. pmosmcnsuggonuiwshaysam www.v\shay,com/doc?91000
Si4116DY
www.vishay.com Vishay Siliconix
S-83046-Rev. C, 22-Dec-08 2Document Number: 69837
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 25 - - V
VDS temperature coefficient VDS/TJID = 250 μA -30-
mV/°C
VGS(th) temperature coefficient VGS(th)/TJ--4-
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 0.6 - 1.4 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 12 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = 25 V, VGS = 0 V - - 1 μA
VDS = 25 V, VGS = 0 V, TJ = 55 °C - - 10
On-state drain current a ID(on) V
DS 5 V, VGS = 10 V 30 - - A
Drain-source on-state resistance aRDS(on)
VGS = 10 V, ID = 10 A - 0.0071 0.0086
VGS = 4.5 V, ID = 7 A - 0.0078 0.0095
VGS = 2.5 V, ID = 5 A - 0.0090 0.0115
Forward transconductance a gfs VDS = 15 V, ID = 10 A - 68 - S
Dynamic b
Input capacitance Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
- 1925 -
pFOutput capacitance Coss - 305 -
Reverse transfer capacitance Crss - 135 -
Total gate charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A - 37 56
nC
VDS = 15 V, VGS = 4.5 V, ID = 10 A
-17.527
Gate-source charge Qgs -3.7-
Gate-drain charge Qgd -3.3-
Gate resistance Rgf = 1 MHz - 1.6 3
Turn-on delay time td(on)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
-1325
ns
Rise time tr -1120
Turn-off delay time td(off) -5090
Fall time tf-1530
Turn-on delay time td(on)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
-714
Rise time tr -1020
Turn-off delay time td(off) -3155
Fall time tf-918
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISTC = 25 °C - - 4.5 A
Pulse diode forward current aISM --50
Body diode voltage VSD IS = 3 A - 0.69 1.1 V
Body diode reverse recovery time trr
IF = 5 A, di/dt = 100 A/μs,
TJ = 25 °C
-2645ns
Body diode reverse recovery charge Qrr -1630nC
Reverse recovery fall time ta-13-ns
Reverse recovery rise time tb-13-
— VISHAY. V \ \ gmos:echsuggon@wshay.com www.v\shay.com/doc?91000
Si4116DY
www.vishay.com Vishay Siliconix
S-83046-Rev. C, 22-Dec-08 3Document Number: 69837
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 thru 3 V
V
GS
=2V
0.0070
0.0073
0.0076
0.0079
0.0082
0.0085
0 1020304050
- On-Resistance (Ω)RDS(on)
ID- Drain Current (A)
VGS =10V
VGS =4.5V
0
2
4
6
8
10
0 8 16 24 32 40
ID=10A
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
VDS =20V
VDS =10V
VDS =15V
Crss
0
500
1000
1500
2000
2500
0 5 10 15 20 25
Coss
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
(Normalized)
- On-Resistance
RDS(on)
ID=10A
VGS =10V
VGS =4.5V
VISHAY. pmosmcnsuggomiwshaymm www.v\shay,com/doc?91000
Si4116DY
www.vishay.com Vishay Siliconix
S-83046-Rev. C, 22-Dec-08 4Document Number: 69837
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
- Source Current (A)I S
1
0.01
0.001
0.1
10
100
TJ=25 °C
TJ= 150 °C
- 0.6
- 0.4
- 0.2
0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
Variance (V)VGS(th)
TJ- Temperature (°C)
ID=5mA
0
0.01
0.02
0.03
0.04
0.05
0246810
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
TA= 25 °C
TA= 125 °C
0
24
48
72
96
120
101100.00.01
Time (s)
Power (W)
0.1
VDS - Drain-to-Source Voltage (V)
*V
GS > minimum VGS at which RDS(on) is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)ID
0.1
TA= 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
Limited by RDS(on)*
1ms
— VISHAY. V sa pmosmcnsuggonviwshaymm www.v\shay.com/doc?91000
Si4116DY
www.vishay.com Vishay Siliconix
S-83046-Rev. C, 22-Dec-08 5Document Number: 69837
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating a
Power, Junction-to-Foot Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
0
4
8
12
16
20
0 25 50 75 100 125 150
TC- Case Temperature (°C)
ID- Drain Current (A)
0.0
1.2
2.4
3.6
4.8
6.0
0 25 50 75 100 125 150
TC- Case Temperature (°C)
Power (W)
0
0.32
0.64
0.96
1.28
1.60
0 25 50 75 100 125 150
TA- Ambient Temperature (°C)
Power (W)
VISHAY. www.mshay cum/ggg’b‘9837 pmosmcnsuggomiwshamam www.v\shay,com/doc?91000
Si4116DY
www.vishay.com Vishay Siliconix
S-83046-Rev. C, 22-Dec-08 6Document Number: 69837
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69837.
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
0.05
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01 Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 95 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
0.02
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05
— VISHAYm V HRH |-——-|
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 50-8 0172 (A 359} n 246 (a 248) Recommended Mwmmum Pads Dwmensmns m Inches/(mm) VISHAY» Docmem Number 72606 Re w 2‘ rJaurOB
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
Return to Index
Return to Index
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Revision: 01-Jan-2019 1Document Number: 91000
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