ESD9L Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2017
November, 2017 Rev. 7
1Publication Order Number:
ESD9L/D
ESD9L, SESD9L Series
ESD Protection Diode
UltraLow Capacitance
The ESD9L Series is designed to protect voltage sensitive components
that require ultralow capacitance from ESD and transient voltage
events. Excellent clamping capability, low capacitance, low leakage, and
fast response time, make these parts ideal for ESD protection on designs
where board space is at a premium. Because of its low capacitance, it is
suited for use in high frequency designs such as USB 2.0 high speed and
antenna line applications.
Specification Features:
Ultra Low Capacitance 0.5 pF
Low Clamping Voltage
Small Body Outline Dimensions:
0.039 x 0.024(1.00 mm x 0.60 mm)
Low Body Height: 0.016 (0.4 mm)
Standoff Voltage: 3.3 V, 5 V
Low Leakage
Response Time is Typically < 1.0 ns
IEC6100042 Level 4 ESD Protection
S and SZ Prefixes for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 6100042 (ESD) Contact
Air
±10
±15
kV
Total Power Dissipation on FR5 Board
(Note 1) @ TA = 25°C
°PD°150 mW
Storage Temperature Range Tstg 55 to +150 °C
Junction Temperature Range TJ55 to +150 °C
Lead Solder Temperature Maximum
(10 Second Duration)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
Device Package Shipping
ORDERING INFORMATION
SOD923
CASE 514AB
ESD9LxxxST5G SOD923
(PbFree)
8000/Tape & Reel
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 2 of this data sheet.
DEVICE MARKING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
X = Specific Device Code
M = Date Code
www.onsemi.com
X M
*Date Code orientation and/or position may
vary depending upon manufacturing location.
PIN 1. CATHODE
2. ANODE
12
12
1
2
SESD9LxxxST5G SOD923
(PbFree)
8000/Tape & Reel
SZESD9LxxxST5G SOD923
(PbFree)
8000/Tape & Reel
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ESD9L, SESD9L Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
IFForward Current
VFForward Voltage @ IF
Ppk Peak Power Dissipation
CMax. Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
UniDirectional
IPP
IF
V
I
IR
IT
VRWM
VCVBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types)
Device*
Device
Marking
VRWM
(V)
IR (mA)
@ VRWM
VBR (V) @ IT
(Note 2) ITC (pF)
VC (V)
@ IPP = 1 A VC
Max Max Min mA Typ Max Max
Per IEC6100042
(Note 4)
ESD9L3.3ST5G 6** 3.3 1.0 4.8 1.0 0.5 0.9 9.0 Figures 1 and 2
See Below
ESD9L5.0ST5G D 5.0 1.0 5.4 1.0 0.5 0.9 9.8 Figures 1 and 2
See Below
* Includes S and SZ-prefix devices where applicable.
**Rotated 180°.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. Surge current waveform per Figure 5.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC6100042
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC6100042
www.cnsemi.com
ESD9L, SESD9L Series
www.onsemi.com
3
IEC 6100042 Spec.
Level
Test Volt-
age (kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
Ipeak
90%
10%
IEC6100042 Waveform
100%
I @ 30 ns
I @ 60 ns
tP = 0.7 ns to 1 ns
Figure 3. IEC6100042 Spec
Figure 4. Diagram of ESD Test Setup
50 W
Cable
Device
Under
Test Oscilloscope
ESD Gun
50 W
The following is taken from Application Note
AND8308/D Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC6100042 waveform. Since the
IEC6100042 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
Figure 5. 8 X 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
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SOD923
CASE 514AB
ISSUE D
DATE 03 SEP 2020
SCALE 8:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
5. DIMENSION L WILL NOT EXCEED 0.30mm.
GENERIC
MARKING DIAGRAM*
X = Specific Device Code
M = Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
DIM MIN NOM MAX
MILLIMETERS
A0.34 0.37 0.40
b0.15 0.20 0.25
c0.07 0.12 0.17
D0.75 0.80 0.85
E0.55 0.60 0.65
0.95 1.00 1.05
L0.19 REF
HE
0.013 0.015 0.016
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.007 REF
MIN NOM MAX
INCHES
D
E
c
A
Y
X
21
X M
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
STYLE 1 STYLE 2
STYLE 1 STYLE 2
X M
DIMENSIONS: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
See Application Note AND8455/D for more mounting details
1.20
2X
0.25
2X
0.36
PACKAGE
OUTLINE
b2X
0.08 XY TOP VIEW
HE
SIDE VIEW
2X
BOTTOM VIEW
L2
L
2X
L2 0.05 0.10 0.15 0.002 0.004 0.006
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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SOD923, 1.0X0.6X0.37, MAX HEIGHT 0.40
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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1
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