NCP167 Datasheet by ON Semiconductor

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LDO Regu tor 0N Semlconductor® www.0nseml.com m a. T‘ , K 37 A \ L, / \ u / \ o_ °l l Flgure1.1'yplcal Appllcaflon Schematlcs e Semmuummampmm Mame; uc‘ 2m | September, 2015 — Rev. 3
© Semiconductor Components Industries, LLC, 2016
September, 2019 Rev. 3
1Publication Order Number:
NCP167/D
NCP167
LDO Regulator - Ultra-Low
Noise, High PSRR, RF and
Analog Circuits
700 mA
The NCP167 is a linear regulator capable of supplying 700 mA
output current. Designed to meet the requirements of RF and analog
circuits, the NCP167 device provides low noise, high PSRR, low
quiescent current, and very good load/line transients. The device is
designed to work with a 1 mF input and a 1 mF output ceramic capacitor.
It is available in two thickness ultrasmall 0.35P, 0.65 mm x 0.65 mm
Chip Scale Package (CSP) and XDFN4 0.65P, 1 mm x 1 mm.
Features
Operating Input Voltage Range: 1.9 V to 5.5 V
Available in Fixed Voltage Option: 1.8 V to 5.2 V
±2% Accuracy Over Load/Temperature
Ultra Low Quiescent Current Typ. 12 mA
Standby Current: Typ. 0.1 mA
Very Low Dropout: 210 mV at 700 mA
Ultra High PSRR: Typ. 85 dB at 20 mA, f = 1 kHz
Ultra Low Noise: 8.5 mVRMS
Stable with a 1 mF Small Case Size Ceramic Capacitors
Available in WLCSP4 0.65 mm x 0.65 mm x 0.33 mm
XDFN4 1 mm x 1 mm x 0.4 mm
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Batterypowered Equipment
Wireless LAN Devices
Smartphones, Tablets
Cameras, DVRs, STB and Camcorders
IN
EN
GND
OUT
OFF
ON
Figure 1. Typical Application Schematics
VOUT
COUT
1 mF
Ceramic
VIN
NCP167
CIN
1 mF
Ceramic
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this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
A1 A2
B1 B2
IN OUT
EN GND
(Top View)
(Top View)
MARKING
DIAGRAMS
X or XX = Specific Device Code
M = Date Code
XDFN4
CASE 711AJ
WLCSP4
CASE 567JZ
A1
1XX M
1
X M
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2
Figure 2. Simplified Schematic Block Diagram
IN
THERMAL
SHUTDOWN
MOSFET
DRIVER WITH
CURRENT LIMIT
INTEGRATED
SOFTSTART
BANDGAP
REFERENCE
ENABLE
LOGIC
EN
OUT
GND
EN
* ACTIVE DISCHARGE
Version A only
PIN FUNCTION DESCRIPTION
Pin No.
CSP4
Pin No.
XDFN4
Pin
Name Description
A1 4 IN Input voltage supply pin
A2 1 OUT Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor.
B1 3 EN Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1.2 V enables the LDO.
B2 2 GND Common ground connection
EPAD EPAD Expose pad should be tied to ground plane for better power dissipation
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage (Note 1) VIN 0.3 V to 6V
Output Voltage VOUT 0.3 to VIN + 0.3, max. 6 V V
Chip Enable Input VCE 0.3 to VIN + 0.3, max. 6 V V
Output Short Circuit Duration tSC unlimited s
Maximum Junction Temperature TJ150 °C
Storage Temperature TSTG 55 to 150 °C
ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V
ESD Capability, Machine Model (Note 2) ESDMM 200 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22A114
ESD Machine Model tested per EIA/JESD22A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Characteristics, WLCSP4 (Note 3)
Thermal Resistance, JunctiontoAir
RqJA
108
°C/W
Thermal Characteristics, XDFN4 (Note 3)
Thermal Resistance, JunctiontoAir 198
3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD517
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3
ELECTRICAL CHARACTERISTICS 40°C TJ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise
noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4).
Parameter Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage VIN 1.9 5.5 V
Output Voltage Accuracy (Note 5) VIN = VOUT(NOM) + 1 V to 5.5 V
0 mA IOUT 700 mA VOUT 2 +2 %
Line Regulation VOUT(NOM) + 1 V VIN 5.5 V LineReg 0.02 %/V
Load Regulation IOUT = 1 mA to
700 mA
WLCSP4
LoadReg
0.001
%/mA
XDFN4 0.002
Dropout Voltage (Note 6) IOUT = 700 mA VOUT(NOM) = 1.8 V
VDO
315 450
mV
VOUT(NOM) = 3.3 V 190 290
Output Current Limit VOUT = 90% VOUT(NOM) ICL 800 1000
mA
Short Circuit Current VOUT = 0 V ISC 1050
Quiescent Current IOUT = 0 mA IQ9.7 18 mA
Shutdown Current VEN 0.4 V, VIN = 4.8 V IDIS 0.01 1 mA
EN Pin Threshold Voltage EN Input Voltage “H” VENH 1.2
V
EN Input Voltage “L” VENL 0.4
EN Pull Down Current VEN = 4.8 V IEN 0.2 0.5 mA
TurnOn Time COUT = 1 mF, From assertion of VEN to
VOUT = 95% VOUT(NOM) 120 ms
Power Supply Rejection Ratio VOUT(NOM) = 3.3 V,
IOUT = 20 mA
f = 100 Hz
f = 1 kHz
f = 10 kHz
f = 100 kHz
PSRR
83
85
80
63
dB
Output Voltage Noise f = 10 Hz to 100 kHz IOUT = 20 mA VN8.5 mVRMS
Thermal Shutdown Threshold Temperature rising TSDH 160 °C
Temperature falling TSDL 140 °C
Active output discharge resistance VEN < 0.4 V, Version A only RDIS 280 W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Respect SOA.
6. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM).
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TYPICAL CHARACTERISTICS
Figure 3. Output Voltage vs. Temperature
VOUT = 2.85 V
Figure 4. Quiescent Current vs. Input Voltage
TJ, JUNCTION TEMPERATURE (°C) VIN, INPUT VOLTAGE (V)
1208060402002040
2.80
2.81
2.83
2.90
5.04.03.53.02.01.00.50
0
2
4
8
10
12
14
16
Figure 5. Ground Current vs. Output Current Figure 6. Dropout Voltage vs. Output Current
VOUT = 1.8 V
IOUT
, OUTPUT CURRENT (mA) IOUT
, OUTPUT CURRENT (A)
10001001010.10.010.001
0
200
400
600
1000
1200
1600
1800
0.70.60.50.40.30.20.10
0
0.05
0.10
0.20
0.30
0.35
0.40
0.50
Figure 7. Dropout Voltage vs. Output Current
VOUT = 2.85 V
Figure 8. Dropout Voltage vs. Output Current
VOUT = 3.3 V
IOUT
, OUTPUT CURRENT (A) IOUT
, OUTPUT CURRENT (A)
0.70.60.50.40.30.20.10
0
0.03
0.06
0.09
0.15
0.21
0.27
0.30
0.70.60.50.40.30.20.10
0
0.03
0.06
0.09
0.18
0.21
0.27
0.30
VOUT
, OUTPUT VOLTAGE (V)
IQ, QUIESCENT CURRENT (mA)
IGND, GROUND CURRENT (mA)
VDROP
, DROPOUT VOLTAGE (V)
VDROP
, DROPOUT VOLTAGE (V)
VDROP
, DROPOUT VOLTAGE (V)
IOUT = 10 mA
VIN = 3.85 V
VOUT = 2.85 V
CIN = 1 mF
COUT = 1 mF
100
2.82
2.84
2.86
2.85
2.87
2.89
2.88
VOUT = 2.85 V
CIN = 1 mF
COUT = 1 mF
1.5 2.5 4.5 5.5
6
TJ = 125°C
TJ = 25°C
TJ = 40°C
TJ = 125°C
TJ = 25°C
TJ = 40°C
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
TJ = 125°C
TJ = 25°C
TJ = 40°C
VOUT = 2.85 V
CIN = 1 mF
COUT = 1 mF
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
TJ = 125°C
TJ = 25°C
TJ = 40°C
TJ = 125°C
TJ = 25°C
TJ = 40°C
VIN = 3.85 V
VOUT = 2.85 V
CIN = 1 mF
COUT = 1 mF
800
1400
0.8
0.15
0.25
0.45
0.8
0.12
0.18
0.24
0.8
0.12
0.15
0.24
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TYPICAL CHARACTERISTICS
Figure 9. Current Limit vs. Temperature Figure 10. Short Circuit Current vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
1008060402002040
550
600
700
750
850
900
1000
1050
12010080402002040
550
600
700
750
850
900
1000
1050
Figure 11. Short Circuit Current vs. Input
Voltage
Figure 12. Disable Current vs. Temperature
VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
5.04.03.02.01.51.00.50
0
100
300
400
500
700
800
1000
12010060402002040
0
0.05
0.10
0.20
0.30
0.35
0.40
0.50
Figure 13. Current to Enable Pin vs.
Temperature
Figure 14. Enable Voltage Threshold vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
1008060402002040
0
40
120
160
240
280
320
400
1008060402002040
300
350
400
500
600
650
700
800
ICL, CURRENT LIMIT (mA)
ISC, SHORT CIRCUIT CURRENT (mA)
ISC, SHORT CIRCUIT CURRENT (mA)
IDIS, DISABLE CURRENT (mA)
IEN, ENABLE CURRENT (nA)
VEN, VOLTAGE ON ENABLE PIN (V)
120
650
800
950
VIN = 3.85 V
VOUT = 2.85 V
CIN = 1 mF
COUT = 1 mF
VIN = 3.85 V
VOUT = 2.85 V
CIN = 1 mF
COUT = 1 mF
60
650
800
950
CIN = 1 mF
COUT = 1 mF
TJ = 125°C
TJ = 25°C
TJ = 40°C
2.5 3.5 4.5 5.5
200
600
900
80
CIN = 1 mF
COUT = 1 mF
0.15
0.25
0.45
VIN = 5.5 V
VIN = 3.85 V
VEN = 5.5 V
OFF > ON
ON > OFF
VIN = 5.5 V
VOUT = 2.85 V
IOUT = 1 mA
CIN = 1 mF
COUT = 1 mF
120
80
200
360
120
VIN = 5.5 V
VOUT = 2.85 V
IOUT = 10 mA
CIN = 1 mF
COUT = 1 mF
450
550
750
WEZ>5 mw_OZ m0<50> thFDO fine/35 mw_OZ m0<50> P3950
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TYPICAL CHARACTERISTICS
Figure 15. Power Supply Rejection Ratio vs.
Current, VDROP = 0.5 V, COUT = 1 mF
Figure 16. Power Supply Rejection Ratio vs.
Current, VDROP = 0.3 V, COUT = 1 mF
FREQUENCY (kHz) FREQUENCY (kHz)
10M1M100K10K1K100
0
10
30
40
50
60
80
100
Figure 17. Power Supply Rejection Ratio vs.
Input Voltage, IOUT = 100 mA, COUT = 1 mF
Figure 18. Power Supply Rejection Ratio vs.
Input Voltage, IOUT = 20 mA, COUT = 1 mF
FREQUENCY (kHz) FREQUENCY (kHz)
Figure 19. Output Voltage Noise Spectral Density
for VOUT = 3.3 V, IOUT = 20 mA, COUT = 1 mF
Figure 20. Output Voltage Noise Spectral Density
for VOUT = 3.3 V, IOUT = 250 mA, COUT = 1 mF
FREQUENCY (kHz) FREQUENCY (kHz)
1M100K10K1K10010
10
100
1K
10K
100K
1M100K10K1K10010
10
100
1K
10K
100K
RR, RIPPLE REJECTION (dB)
RR, RIPPLE REJECTION (dB)
RR, RIPPLE REJECTION (dB)
RR, RIPPLE REJECTION (dB)
OUTPUT VOLTAGE NOISE (nV/Hz)
OUTPUT VOLTAGE NOISE (nV/Hz)
VIN = 3.8 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
MLCC, X7R, 0805
20
70
90
10M1M100K10K1K100
0
10
30
40
50
60
80
100
20
70
90
VOUT = 3.3 V
IOUT = 100 mA
CIN = 1 mF
COUT = 1 mF
MLCC, X7R, 0805
10M1M100K10K1K100
0
10
30
40
50
60
80
100
20
70
90
10M1M100K10K1K100
0
10
30
40
50
60
80
100
20
70
90
VOUT = 3.3 V
IOUT = 20 mA
CIN = 1 mF
COUT = 1 mF
MLCC, X7R, 0805
VIN = 3.6 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
MLCC, X7R, 0805
VIN = 3.6 V
VOUT = 3.3 V
IOUT = 20 mA
CIN = 1 mF
COUT = 1 mF
MLCC, X7R, 0805
VIN = 3.8 V
VOUT = 3.3 V
IOUT = 250 mA
CIN = 1 mF
COUT = 1 mF
MLCC, X7R, 0805
100 mA
1 mA
20 mA
100 mA
1 mA
20 mA
4.3 V
3.8 V
3.6 V
4.3 V
3.8 V
3.6 V
CAPACITV CHANGE [M] Packagesize —503 —401 —201
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APPLICATIONS INFORMATION
General
The NCP167 is an ultralow noise 700 mA low dropout
regulator designed to meet the requirements of RF
applications and high performance analog circuits. The
NCP167 device provides very high PSRR and excellent
dynamic response. In connection with low quiescent current
this device is well suitable for battery powered application
such as cell phones, tablets and other. The NCP167 is fully
protected in case of current overload, output short circuit and
overheating.
Input Capacitor Selection (CIN)
Input capacitor connected as close as possible is necessary
for ensure device stability. The X7R or X5R capacitor
should be used for reliable performance over temperature
range. The value of the input capacitor should be 1 mF or
greater to ensure the best dynamic performance. This
capacitor will provide a low impedance path for unwanted
AC signals or noise modulated onto constant input voltage.
There is no requirement for the ESR of the input capacitor
but it is recommended to use ceramic capacitors for their low
ESR and ESL. A good input capacitor will limit the
influence of input trace inductance and source resistance
during sudden load current changes.
Output Decoupling (COUT)
The NCP167 requires an output capacitor connected as
close as possible to the output pin of the regulator. The
recommended capacitor value is 1 mF and X7R or X5R
dielectric due to its low capacitance variations over the
specified temperature range. The NCP167 is designed to
remain stable with minimum effective capacitance of 0.7 mF
to account for changes with temperature, DC bias and
package size. Especially for small package size capacitors
such as 0201 the effective capacitance drops rapidly with the
applied DC bias. Please refer Figure 21.
Figure 21. Capacity vs DC Bias Voltage
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 1.7 W. Larger
output capacitors and lower ESR could improve the load
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
Enable Operation
The NCP167 uses the EN pin to enable/disable its device
and to deactivate/activate the active discharge function. If
the EN pin voltage is <0.4 V the device is guaranteed to be
disabled. The pass transistor is turnedoff so that there is
virtually no current flow between the IN and OUT. The
active discharge transistor is active so that the output voltage
VOUT is pulled to GND through a 280 W resistor. In the
disable state the device consumes as low as typ. 10 nA from
the VIN. If the EN pin voltage >1.2 V the device is
guaranteed to be enabled. The NCP167 regulates the output
voltage and the active discharge transistor is turnedoff. The
EN pin has internal pulldown current source with typ. value
of 200 nA which assures that the device is turnedoff when
the EN pin is not connected. In the case where the EN
function isn’t required the EN should be tied directly to IN.
Output Current Limit
Output Current is internally limited within the IC to a
typical 1000 mA. The NCP167 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 1050 mA (typ.). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (TSD = 160°C typical), Thermal Shutdown event
is detected and the device is disabled. The IC will remain in
this state until the die temperature decreases below the
Thermal Shutdown Reset threshold (TSDU = 140°C typical).
Once the IC temperature falls below the 140°C the LDO is
enabled again. The thermal shutdown feature provides the
protection from a catastrophic device failure due to
accidental overheating. This protection is not intended to be
used as a substitute for proper heat sinking.
Reverse Current
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that VOUT > VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
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Power Supply Rejection Ratio
The NCP167 features very high Power Supply Rejection
ratio. If desired the PSRR at higher frequencies in the range
100 kHz – 10 MHz can be tuned by the selection of COUT
capacitor and proper PCB layout.
TurnOn Time
The turnon time is defined as the time period from EN
assertion to the point in which VOUT will reach 98% of its
nominal value. This time is dependent on various
application conditions such as VOUT(NOM), COUT, TA.
Power Dissipation
As power dissipated in the NCP167 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part. The maximum power dissipation the
NCP167 can handle is given by:
PD(MAX) +ƪ125oC*TAƫ
qJA
(eq. 1)
The power dissipated by the NCP167 for given application
conditions can be calculated from the following equations:
PD[VIN @IGND )IOUTǒVIN *VOUTǓ(eq. 2)
Figure 22. qJA and PD (MAX) vs. Copper Area (CSP4)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
80
90
100
110
120
130
140
150
160
0 100 200 300 400 500 600 700
PCB COPPER AREA (mm2)
qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)
PD(MAX), MAXIMUM POWER DISSIPATION (W)
qJA, 2 oz Cu
qJA, 1 oz Cu
PD(MAX), TA = 25°C, 1 oz Cu
PD(MAX), TA = 25°C, 2 oz Cu
'n DIMAX)‘ TA
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Figure 23. qJA and PD (MAX) vs. Copper Area (XDFN4)
0.3
0.4
0.5
0.6
0.8
0.7
0.9
1.0
150
160
170
180
190
200
210
220
0 100 200 300 400 500 600 700
PCB COPPER AREA (mm2)
qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)
PD(MAX), MAXIMUM POWER DISSIPATION (W)
qJA, 2 oz Cu
qJA, 1 oz Cu
PD(MAX), TA = 25°C, 1 oz Cu
PD(MAX), TA = 25°C, 2 oz Cu
PCB Layout Recommendations
To obtain good transient performance and good regulation
characteristics place CIN and COUT capacitors close to the
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 or 0201 capacitors with
appropriate capacity. Larger copper area connected to the
pins will also improve the device thermal resistance. The
actual power dissipation can be calculated from the equation
above (Equation 2). Expose pad can be tied to the GND pin
for improvement power dissipation and lower device
temperature.
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ORDERING INFORMATION (XDFN4)
Device Nominal Output Voltage Description Marking Package Shipping
NCP167AMX180TBG 1.8 V
700 mA, Active
Discharge
CH
XDFN4
(PbFree)
3000 / Tape
& Reel
NCP167AMX280TBG 2.8 V CP
NCP167AMX285TBG 2.85 V CK
NCP167AMX300TBG 3.0 V CQ
NCP167AMX330TBG 3.3 V CR
NCP167AMX350TBG 3.5 V CL
NCP167BMX330TBG 3.3 V 700 mA, Non-Active
Discharge AR
ORDERING INFORMATION (WLCSP4)
Device
Nominal
Output
Voltage Description Marking* Rotation Package Shipping
NCP167AFCT180T2G 1.8 V
700 mA, Active Discharge
H 0°
WLCSP4
(Pb-Free)
5000 / Tape
& Reel
NCP167AFCT285T2G 2.85 V K 0°
NCP167AFCT295T2G 2.95 V P 0°
NCP167AFCT330T2G 3.3 V R 0°
NCP167AFCT350T2G 3.5 V L 0°
NCP167AFCTC350T2G 3.5 V 700 mA, Active Discharge,
Backside Coating
L 0°
NCP167BFCT330T2G 3.3 V 700 mA, NonActive
Discharge
R 180°
*Marking letter with overbar.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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WLCSP4, 0.64x0.64
CASE 567JZ
ISSUE A
DATE 03 AUG 2016
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO SPHERICAL
CROWNS OF SOLDER BALLS.
DIM
A
MIN NOM
−−−
MILLIMETERS
A1
D
E
b0.195 0.210
e0.35 BSC
−−−
E
D
AB
PIN A1
REFERENCE
e
A0.03 BC
0.05 C
4X b
12
B
A
0.05 C
A
A1
A2
C
0.04 0.06
SCALE 4:1
TOP VIEW
SIDE VIEW
BOTTOM VIEW
NOTE 3
e
A2 0.23 REF
PITCH 0.20
4X
DIMENSIONS: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.35
0.35
RECOMMENDED
A1 PACKAGE
OUTLINE
PITCH
MAX
0.610 0.640
0.610 0.640
0.225
0.33
0.08
0.670
0.670
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON85781F
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
WLCSP4, 0.64X0.64
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
0N Semiwndudw" m BOTTOM VIEW RECOMMENDED MOUNTING FOOTPRI PACKAGE r oumNEfi, LOX 39 aa: ; D‘MENS‘ONS 024T 'For addmional information on our Pb— Free de‘awls, please down‘oad Ihe ON Semwco Mounting Techmques Relerence Manna ON Samaanuuamn and are hademavks av Semxcanduclur Campunenls lnduslnes. uc dba ON Samanauaxar ar us suhsxdxanes m xna Umled sxaxas andJm mhev commas ON Semxcunduclar vesewes ma “gm to make changes wuhum mnna. name to any pruduns necem ON Sarnmnuaaw makes nu wanamy. represenlalmn m guarantee regardmg ma smaamw at W; manuals can any pamcu‘av purpase nnv dues ON Samanuaamn assume any Mammy ansmg mac xna aapncauan m use M any pmduclnv mum and saaamcany dwsc‘axms any and an Mammy mc‘udmg minam nnmauan spema‘ cansequenha‘ m \nmdeula‘ damages ON Sannmnauaxar dues nn| aanyay any hcense under Ms yam nghls Ivar xna ngms av n|hers
XDFN4 1.0x1.0, 0.65P
CASE 711AJ
ISSUE A
DATE 13 NOV 2015
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.20 mm FROM THE TERMINAL TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
B
E
D
D2
BOTTOM VIEW
b
e
4X
NOTE 3
2X 0.05 C
PIN ONE
REFERENCE
TOP VIEW
2X 0.05 C
A
A1
(A3)
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
L
4X
12
1
DIM MIN MAX
MILLIMETERS
A0.33 0.43
A1 0.00 0.05
A3 0.10 REF
b0.15 0.25
D1.00 BSC
D2 0.43 0.53
E1.00 BSC
e0.65 BSC
L0.20 0.30
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
MOUNTING FOOTPRINT*
1.20
0.26
0.24 4X
DIMENSIONS: MILLIMETERS
0.39
RECOMMENDED
GENERIC
MARKING DIAGRAM*
XX = Specific Device Code
M = Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
XX M
1
PACKAGE
OUTLINE
NOTE 4
e/2
D2
45 5
A
M
0.05 BC
43
0.65
PITCH
DETAIL A
4X
b2 0.02 0.12
L2 0.07 0.17
4X
0.52
2X
0.11
4X
L24X
DETAIL A
b24X
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON67179E
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
XDFN4, 1.0X1.0, 0.65P
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm 9 www nnserm cum
www.onsemi.com
1
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