FDMC007N08LCDC Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2017
December, 2017 − Rev. 2 1Publication Order Number:
FDMC007N08LCDC/D
FDMC007N08LCDC
N‐Channel Shielded Gate
POWERTRENCH) MOSFET
80 V, 64 A, 6.8 mW
General Description
This N-Channel MV MOSFET is produced using
ON Semiconductors advanced PowerTrench process that incorporates
Shielded Gate technology. This process has been optimized to
minimize on-state resistance and yet maintain superior switching
performance with best in class soft body diode.
Features
Shielded Gate MOSFET Technology
Max RDS(on) = 6.8 mW at VGS = 10 V, ID = 22 A
Max RDS(on) = 11.1 mW at VGS = 4.5 V, ID = 18 A
5 V Drive Capable
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
100% UIL Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Primary DC−DC MOSFET
Synchronous Rectifier in DC−DC and AC−DC
Motor Drive
Solar
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VDS Drain to Source Voltage 80 V
VGS Gate to Source Voltage ±20 V
IDDrain Current:
Continuous, TC = 25°C (Note 5)
Continuous, TC = 100°C (Note 5)
Continuous, TA = 25°C (Note 1a)
Pulsed (Note 4)
64
41
15
339
A
EAS Single Pulse Avalanche Energy
(Note 3) 150 mJ
PDPower Dissipation:
TC = 25°C
TA = 25°C (Note 1a) 57
3
W
TJ, TSTG Operating and Storage Junction
Temperature Range −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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Dual Coolt 33
(PQFN8)
CASE 483AY
See detailed ordering and shipping information on page 6 o
f
this data sheet.
ORDERING INFORMATION
S (1, 2, 3)
D (5, 6, 7, 8)
G (4)
N-CHANNEL MOSFET
MARKING DIAGRAM
&Z&3&K
7N08LDC
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
7N08LDC = Specific Device Code
VDS RDS(ON) MAX ID MAX
80 V 6.8 mW @ 10 V 22 A
11.1 mW @ 4.5 V
D
D
D
D
S
S
S
G
Pin 1
Top Bottom
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THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction to Case 2.2 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1a) 42
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 80 V
DBVDSS
/DTJ
Breakdown Voltage Temperature
Coefficient ID = 250 mA, referenced to 25°C67 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1mA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 130 mA1.0 1.5 2.5 V
DVGS(th)
/DTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 130 mA, referenced to 25°C−5.2 mV/°C
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 22 A 5.1 6.8 mW
VGS = 4.5 V, ID = 18 A 7.3 11.1
VGS = 10 V, ID = 22 A, TJ = 125°C 9.5 12.5
gFS Forward Transconductance VDS = 5 V, ID = 22 A 80 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 40 V, VGS = 0 V, f = 1 MHz 2195 3070 pF
Coss Output Capacitance 521 730 pF
Crss Reverse Transfer Capacitance 25 40 pF
RgGate Resistance 0.1 0.5 0.9 W
SWITCHING CHARACTERISTICS
td(on) Turn-On Delay Time VDD = 40 V, ID = 22 A, VGS = 10 V,
RGEN = 6 W
11 21 ns
trRise Time 3 10 ns
td(off) Turn-Off Delay Time 36 58 ns
tfFall Time 4 10 ns
QgTotal Gate Charge VGS = 0 V to 10 V, VDD = 40 V,
ID = 22 A 31 44 nC
VGS = 0 V to 4.5 V, VDD = 40 V,
ID = 22 A 15 21 nC
Qgs Gate to Source Charge VDD = 40 V, ID = 22 A 5 nC
Qgd Gate to Drain “Miller” Charge VDD = 40 V, ID = 22 A 4 nC
Qoss Output Charge VDD = 40 V, VGS = 0 V 29 nC
Qsync Total Gate Charge Sync VDS = 0 V, ID = 22 A 28 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 0.7 1.2 V
VGS = 0 V, IS = 22 A (Note 2) 0.8 1.3
trr Reverse Recovery Time IF = 11 A, di/dt = 300 A/ms 18 32 ns
Qrr Reverse Recovery Charge 24 38 nC
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Symbol UnitMaxTypMinTest ConditionParameter
DRAIN-SOURCE DIODE CHARACTERISTICS
trr Reverse Recovery Time IF = 11 A, di/dt = 1000 A/ms 15 26 ns
Qrr Reverse Recovery Charge 60 96 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction to Case (Top Source) 6.0 °C/W
RqJC Thermal Resistance, Junction to Case (Bottom Source) 2.2 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1a) 42 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1b) 105 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1c) 29 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1d) 40 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1e) 19 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1f) 23 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1g) 30 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1h) 79 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1i) 17 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1j) 26 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1k) 12 °C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1l) 16 °C/W
NOTES:
1. RqJA is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. RqJC is guaranteed by
design while RqCA is determined by the user’s board design.
42°C/W when mounted on
a 1 in2 pad of 2 oz copper. 105°C/W when mounted on
a minimum pad of 2 oz copper.
a) b)
G
DF
DS
SF
SS
G
DF
DS
SF
SS
c. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. EAS of 150 mJ is based on starting TJ = 25°C; L = 3 mH, IAS = 10 A, VDD = 80 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 32 A.
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro-mechanical application board design.
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
Figure 3. Normalized On-Resistance vs.
Junction Temperature Figure 4. On-Resistance vs. Gate to Source
Voltage
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
0
0
50
100
150
200
VGS = 3 V
VGS = 4.5 V
VGS = 10 V
VGS = 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
VGS = 8 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0 50 100 150 200
0
1
2
3
4
5
VGS = 10 V
VGS = 8 V
VGS = 3 V
VGS = 4.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 6 V
VGS = 3.5 V
−75
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 22 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
TJ, JUNCTION TEMPERATURE (5C)
−50 −25 0 25 50 75 100 125 150
1
0
40
80
120
160
200
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
TJ = −55oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS , GATE TO SOURCE VOLTAGE (V)
234567
0
0
20
40
60
80
100
TJ= 125 oC
ID= 22 A
TJ= 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(on),DRAIN TO
SOURCE ON−RESISTANCE(mW)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
24 6810
0.0
0.001
0.01
0.1
1
10
100
200
TJ = −55oC
TJ = 25 oC
TJ= 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.2 0.4 0.6 0.8 1.0 1.2
12345
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage
Figure 9. Unclamped Inductive
Switching Capability Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power
Dissipation
0
0
2
4
6
8
10
ID= 22 A
VDD = 50 V
VDD = 40 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 30 V
51015202530 0.1 1 10 80
1
10
100
1000
10000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
0.001
1
10
100
TJ= 125 oC
TJ= 25 oC
TJ= 100 oC
tAV , TIME IN AVALANCHE (ms)
IAS , AVALANCHE CURRENT (A)
0.01 0.1 1 10 100 25
0
14
28
42
56
70
VGS = 4.5 V
RqJC = 2.2oC/W
VGS = 10 V
ID,DRAIN CURRENT (A)
TC, CASE TEMPERATURE (5C)
50 75 100 125 150
0.1 1 10 100 500
0.01
0.1
1
10
100
500
CURVE BENT TO
MEASURED DATA
10 ms
100 ms/DC
10 ms
1 ms
100 ms
ID, DRAIN CURRENT (A)
VDS , DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r DS(on)
SINGLE PULSE
TJ = MAX RATED
RqJC = 2.2 oC/W
TC = 25 oC
10−5 10−4 10−3 10−2 10−1 1
10
100
1000
10000
100000 SINGLE PULSE
RqJC = 2.2 oC/W
TC = 25oC
P(PK),PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 13. Junction-to-Case Transient Thermal Response Curve
10−5 10−4 10−3 10−2 10−1 1
0.001
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE−DESCENDING ORDER
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
NOTES:
ZqJC(t) = r(t) x RqJC
RqJC = 2.2 oC/W
Duty Cycle, D = t1 / t2
Peak TJ = PDM x ZqJC(t) + TC
PDM
t1
t2
ORDERING INFORMATION
Device Marking Package Reel Size Tape Width Quantity
FDMC007N08LCDC 7N08LDC Dual Coolt 33 (PQFN8)
(Pb-Free / Halogen Free) 1312 mm 3000 Units
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
0N Semiwndudw" m -237 MIN- (0.51) 9 I3 I’ e I , ' I . 1 I56 l 2 Is MIN I m —— — + — —— 3:23 . .4 p | . 0 70 MIN PIN 1 1 I 4 4 INDICATOR __0.42 MIN SEE (8X) DETAILA LAND PA'I'I'ERN RECOMMENDATION 0 5g NOTES UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE JEDEC Moa240, ISSUEA, VAR. BA, DATED OCTOBER 2002. B) ALL DIMENSIONS ARE IN MILLIMETERS. PKG? C) DIMENSIONS DO NOT INCLUDE BURRS 2 05 OR MOLD FLASH. MOLD FLASH OR I 1-85 BURRS DOES NOT EXCEED 0 IoMM. I D) DIMENSIONING AND TOLERANCING PER J ASME Y14.5Ma2009. (“'34) (0.33) TYP (0.52 TYR) a ._ (2.27) C ’/ I-I . 0.80 . 0.70 I I _I_ 0.05 1 0.00 DETAILA SCALE 2x SEATING PLANE DOCUMENT NUMBER: 98AON1367AG EIEEImrIIc vevsmns are unmnlm Rnnaa \naysans are unanmIIe DESCRIPTION: PGFNB 3.3X3.3, 0.65P ON SemIcunduclm and are hademavks OI SemIchduclur Cnmvunenls ON SemIcunduchr vesewes Ina IIgM lo make changes mnam InnhEI nauaa In any pruduns naIaIn ON Semenduc‘nv makes m7 wananIy represenlalmn m guarantee regardmg Ina smIaInIIIy DI IL; manuals Inr any pamcuIav purpase nnv dues ON SEmIcunduclm assume any IIaInIIIy avIsIng DmnI Ina appIIca‘IDn m use aI any pIDduclnv cIrcuI| and spEcIIIcaIIy dIscIaIms any and aII IIahIII|y IncIudIng mnam IInnIaIIan specIaI cansequen‘IaI m IncIdenlaI damages ON SemImnduchr dues nn| aanyay any IIcense under ns paIanI IIng "Dr Ina ngms av n|hers lndushIes LLC dba ON SEmIchduchr Dr Ils suhsIdIarIes In Ina Onuau sxaxas andJnI mhev cmm‘nes
PQFN8 3.3X3.3, 0.65P
CASE 483AY
ISSUE O
DATE 30 SEP 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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