Silicon carbide CoolSiC™ Schottky diodes Datasheet by Infineon Technologies

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Infineon
Silicon carbide CoolSiC™ Schottky diodes
Selection guide
www.infineon.com/sic
Silicon Carbide
Improve efficiency and solution costs
Silicon carbide (SiC) devices belong to the so-called wide bandgap semiconductor group,
which offers a number of attractive characteristics for high voltage power semiconductors
when compared to commonly used silicon (Si). In particular, the much higher breakdown
field strength and thermal conductivity of silicon carbide allow developing devices which
by far outperform the corresponding silicon-based ones, and enable efficiency levels
unattainable otherwise. Infineon’s portfolio of SiC devices covers 600 V and 650 V to 1200 V
Schottky diodes as well as the revolutionary CoolSiC™ MOSFET.
Advantages of silicon carbide over silicon devices
The differences in material properties between silicon carbide and silicon limit the fabrication
of practical silicon unipolar diodes (Schottky diodes) to a range up to 100-150 V, with a
relatively high on-state resistance and leakage current. In SiC, Schottky diodes can reach a
much higher breakdown voltage. Infineon is the world’s first SiC discrete power supplier.
Infineon offers products up to 1200 V in discrete packages and up to 1700 V in modules.
Features
No reverse-recovery charge
Purely capacitive switching
High operating temperature
(Tj, max =175°C)
Benefits
System efficiency improvement
compared to Si-based diodes
Reduced cooling requirements
Enabling higher frequency/increased
power density
Higher system reliability due to lower
operating temperature
Reduced EMI
Advantages
Low turn-off losses
Reduction of CoolMOS™ SJ MOSFET or IGBT
turn-on loss
Switching losses independent from load
current, switching speed and temperature
Reverse-recovery charge of SiC Schottky
diodes versus Si-pin diodes
The majority of carrier characteristics imply
no reverse-recovery charge and the only
contribution to the switching losses comes
from the tiny displacement charge of capacitive
nature. In the same voltage range, silicon
devices have a bipolar component resulting in
much higher switching losses. The graph shows
the comparison between various 600 V devices.
Improved system efficiency (PFC in CCM mode
operation, full load, low line)
The fast switching characteristics of the SiC
diodes provide clear efficiency improvements at
system level. The performance gap between SiC
and high-end silicon devices increases with the
operating frequency.
Silicon carbide
10
8
6
4
2
0
-2
-4
-6
-8
-10
0.07 0.1 0.13 0.16 0.19 0.22
0.25
T=125°C, V
DC
= 400 V, I
F
=6 A, di/dt=200 A/µs
SiC Schottky diode
Si-pin double diode (2*300 V)
Ultrafast Si-pin diod
e
I [A]
Time [µs]
95.0
94.5
94.0
93.5
93.0
92.5
92.0
91.5
91.0
60 120 180 240
Switchting frequency [kHz]
Efficiency [%]
Infineon SiC 6 A Comp. 1 6 A Comp. 2 6
A
Silicon carbide
Silicon carbide portfolio
Applications
Server power
supply
Telecom power
supply
Solar
UPS
EV charging
Energy storage
PC power supply
Motor drives
Lighting
CAV
Industrial welding
Infineon is the world’s first SiC discrete power supplier. The long market presence and
experience enable Infineon to deliver highly reliable, industry-leading SiC performance.
With over 10 years pioneering experience in developing and manufacturing SiC diodes,
Infineon’s latest CoolSiC™ Schottky diode generation 6 family sets benchmark in
quality, efficiency and reliability.
w W {7
CoolSiC™ Schottky diodes 600 V G3
IF
[A]
TO-220 R2L DPAK R2L
3IDH03SG60C IDD03SG60C
4IDH04SG60C IDD04SG60C
5IDH05SG60C IDD05SG60C
6IDH06SG60C IDD06SG60C
8IDH08SG60C IDD08SG60C
9IDH09SG60C IDD09SG60C
10 IDH10SG60C IDD10SG60C
12 IDH12SG60C IDD12SG60C *
Silicon carbide portfolio
„B“ in product name refers to dual die
with the common-cathode configuration.
Silicon carbide portfolio
CoolSiC™ Schottky diodes 650 V G6
ACTIVE & PREFERRED
IF
[A]
TO-220 R2L Double DPAK
4IDH04G65C6 IDDD04G65C6
6IDH06G65C6 IDDD06G65C6
8IDH08G65C6 IDDD08G65C6
10 IDH10G65C6 IDDD10G65C6
12 IDH12G65C6 IDDD12G65C6 *
16 IDH16G65C6 IDDD16G65C6
20 IDH20G65C6 IDDD20G65C6
CoolSiC™ Schottky diodes 650 V G5
ACTIVE
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 D2PAK R2L ThinPAK 8x8
2
IDH02G65C5 IDK02G65C5 IDL02G65C5
3
IDH03G65C5 IDK03G65C5
4
IDH04G65C5 IDK04G65C5 IDL04G65C5
5
IDH05G65C5 IDK05G65C5
6
IDH06G65C5 IDK06G65C5 IDL06G65C5
8
IDH08G65C5 IDK08G65C5 IDL08G65C5
9
IDH09G65C5 IDK09G65C5
10
IDH10G65C5 IDW10G65C5 IDK10G65C5 IDL10G65C5
12
IDH12G65C5 IDW12G65C5 IDK12G65C5 IDL12G65C5
16
IDH16G65C5 IDW16G65C5
20
IDH20G65C5 IDW20G65C5B IDW20G65C5
24
IDW24G65C5B
30/32
IDW32G65C5B IDW30G65C5
40
IDW40G65C5B IDW40G65C5
CoolSiC™ Schottky diodes 1200 V G5
ACTIVE & PREFERRED
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 R2L DPAK R2L D2PAK R2L
2IDH02G120C5 IDM02G120C5 IDK02G120C5
5IDH05G120C5 IDM05G120C5 IDK05G120C5
8IDH08G120C5 IDM08G120C5 IDK08G120C5
10 IDH10G120C5 IDW10G120C5B IDWD10G120C5 IDM10G120C5 IDK10G120C5
15/16 IDH16G120C5 IDW15G120C5B IDWD15G120C5 IDK16G120C5
20 IDH20G120C5 IDW20G120C5B IDWD20G120C5 IDK20G120C5
30 IDW30G120C5B IDWD30G120C5
40 IDW40G120C5B IDWD40G120C5
ACTIVE
*For more information on the product, contact our product support
*For more information on the product, contact our product support
PIN
1
PIN
2
PIN
3
CASE
For more details on the product,
click on the part number.
=3 a med Vienna m z z 1 : C\_‘ 3
Common SiC diodes applications and topologies
*Battery voltage
Applications and topologies
Interleaved PFC Solar microinverter
OSCoolM
CoolMOS™
CoolSiC™ diode OptiMOS™
OptiMOS™OptiMOS™
OptiMOS™
CoolMOS™ CoolMOS™
CoolMOS™ CoolMOS™
25-55 VDC
230 VAC
OptiMOS™
OptiMOS™
CoolSiC™ diodeCoolSiC™ diode
CoolSiC™
diode
L1
L2
400 VDC
85-265 VAC
Solar string inverter
CoolMOS™
CoolMOS™
IGBT
IGBT
CoolSiC™ diode
CoolSiC™ diode
CoolSiC™ diode
CoolSiC™ diode
CoolSiC™ diode
CoolMOS™
CoolMOS™
CoolMOS™
150-450 VDC
230 VAC
CoolMOS™CoolMOS™
CoolMOS™ IGBT
IGBT
CoolMOS
CoolSiC™ diode
CoolSiC™ diode
CoolSiC™ diode
CoolMOS™
Classic PFC Bridgeless dual-boost PFC Inverter: anti-parallel/freewheeling diode
85-265 VAC 400 VDC 230 VAC
85-265 VAC
400 VDC
400 VDC
CoolMOS™ CoolMOS™
CoolMOS™ CoolMOS™
CoolSiC™ diode
CoolSiC™ diode
Three-phase modified Vienna PFC Three-phase B6 rectifier PFC Full-bridge LLC DC-DC converterStacked full-bridge LLC DC-DC converter
CoolSiC™ MOSFETs CoolSiC™ MOSFETs CoolSiC™ diode
400 VAC
200-750 VDC*
CoolSiC™ diode CoolSiC™ diode
CoolMOS™ /
TRENCHSTOP™ IGBTs CoolMOS™
400 VAC 200-750 VDC*
For further information please visit our website: www.infineon.com/sic
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2020 Infineon Technologies AG.
All Rights Reserved.
Document number: B152-I0562-V3-7600-EU-EC
Date: 06/2020
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