:I IXYS IXFH/IXFM IXFH/IXFM/
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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 200 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 42N20 42 A
50N20 50 A
58N20 58 A
IDM TC= 25°C, pulse width limited by TJM 42N20 168 A
50N20 200 A
58N20 232 A
IAR TC= 25°C 42N20 42 A
50N20 50 A
58N20 58 A
EAR TC= 25°C30mJ
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ £ 150°C, RG = 2 W
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 mA 200 V
VGS(th) VDS = VGS, ID = 4 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 200 mA
VGS = 0 V TJ = 125°C1mA
VDSS ID25 RDS(on)
200 V 42 A 60mW
200 V 50 A 45mW
200 V 58 A 40mW
trr £ 200 ns
TO-247 AD (IXFH)
TO-204 AE (IXFM)
DG
Features
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power surface mountable package
High power density
G = Gate, D = Drain,
S = Source, TAB = Drain
(TAB)
S
TO-268 (D3) Case Style
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
G
S
IXYS reserves the right to change limits, test conditions, and dimensions. 91522H (2/98)
(TAB)
.
Obsolete:
IXFM42N20
IXFM50N20
Package
unavailable
IXYS Pu‘se tesl, ts 300 M m z: N‘ “C unless _ nE.J w: 1 -‘ u mu] -
2 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
RDS(on) VGS = 10 V, ID = 0.5 ID25 42N20 0.060 W
50N20 0.045 W
58N20 0.040 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
gfs VDS = 10 V; ID = 0.5 ID25, pulse test 20 32 S
Ciss 4400 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 800 pF
Crss 285 pF
td(on) 18 25 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 15 20 ns
td(off) RG= 1 W (External) 72 90 ns
tf16 25 ns
Qg(on) 190 220 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 35 50 nC
Qgd 95 110 nC
RthJC 0.42 K/W
RthCK (TO-247 and TO-204 Case styles) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 42N20 42 A
50N20 50 A
58N20 58 A
ISM Repetitive; 42N20 168 A
pulse width limited by TJM 50N20 200 A
58N20 232 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr TJ = 25°C 200 ns
TJ = 125°C 300 ns
QRM TJ = 25°C 1.5 mC
TJ = 125°C 2.6 mC
IRM TJ = 25°C19 A
TJ = 125°C23 A
IF = 25A,
-di/dt = 100 A/ms,
VR = 100 V
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-204 AE (IXFM) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 38.61 39.12 1.520 1.540
B - 22.22 - 0.875
C 6.40 11.40 0.252 0.449
D 1.45 1.60 0.057 0.063
E 1.52 3.43 0.060 0.135
F 30.15 BSC 1.187 BSC
G 10.67 11.17 0.420 0.440
H 5.21 5.71 0.205 0.225
J 16.64 17.14 0.655 0.675
K 11.18 12.19 0.440 0.480
Q 3.84 4.19 0.151 0.165
R 25.16 26.66 0.991 1.050
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Min. Recommended Footprint
TO-268AA (D3 PAK)
IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20
IXFH/IXFM50N20 IXFT58N20
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
.
:I IXYS
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© 2000 IXYS All rights reserved
IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20
IXFH/IXFM50N20 IXFT58N20
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 VGS(th) BVDSS
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
10
20
30
40
50
60
70
80
58N20
42N20
50N20
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Normalized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0 25 50 75 100 125 150 175
R
DS(on)
- Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
VGS - Volts
012345678910
I
D
- Amperes
0
10
20
30
40
50
60
70
80
90
100
VDS - Volts
012345678910
I
D
- Amperes
0
10
20
30
40
50
60
70
80
90
100
6V
5V
TJ = 25°C
VGS = 15V
VGS = 10V
ID = 25A
VGS = 10V
9V
8V
7V
TJ = 25°C
.
:I IXYS
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© 2000 IXYS All rights reserved
IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20
IXFH/IXFM50N20 IXFT58N20
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
to Drain Voltage
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
VDS - Volts
110100
I
D
- Amperes
1
10
100
Gate Charge - nCoulombs
0 25 50 75 100 125 150 175 200
V
GE
- Volts
0
2
4
6
8
10
12
14
VSD - Volts
0.4 0.6 0.8 1.0 1.2 1.4
I
D
- Amperes
0
10
20
30
40
50
VDS - Volts
0 5 10 15 20 25
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
Single Pulse
D=0.1
D=0.5
Crss
Coss
Ciss
200
Limited by RDS(on)
10µs
100ms
100µs
10ms
1ms
VDS = 100V
ID = 50A
IG = 10mA
TJ = 125°C
TJ = 25°C
D=0.01
D=0.02
D=0.05
D=0.2
f = 1MHz
VDS = 25V
.
IXYS A Lillelluse Technumgy
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.