CD214A-B3xR Series Datasheet by Bourns Inc.

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Features
n RoHS compliant*
n Low profile
n Low power loss, high efficiency
n UL 94V-0 classification
Applications
n Switch Mode Power Supplies
n Portable equipment batteries
n High frequency rectification
n DC/DC Converters
n Telecommunications
CD214A-B3xR Series Schottky Barrier Rectifier Chip Diode
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
General Information
Portable communications, computing and video equipment manufacturers are challenging the
semiconductor industry to develop increasingly smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip
package compatible with DO-214AC (SMA) size format. The Schottky Rectifier Diodes offer a
forward current of 3 A with a choice of repetitive peak reverse voltage of 20 V up to 60 V.
Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter Symbol CD214A- Unit
B320R B320LR B340R B340LR B360R
Maximum Repetitive Peak Reverse Voltage VRRM 20 20 40 40 60 V
Maximum Average Forward Current IF(AV) 3A
Maximum Peak Forward Surge Current
(8.3 ms Single Half Sine-Wave) IFSM 80 A
Operating Junction Temperature Range TOPR -55 to +125 °C
Storage Temperature Range TSTG -55 to +150 °C
*RoHS COMPLIANT
LEAD FREE
*RoHS COMPLIANT
VERSIONS
AVAILABLE
LEAD FREE
VERSIONS ARE
RoHS COMPLIANT*
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter Symbol Condition or Model Min. Typ. Max. Unit
Maximum Instantaneous Forward Voltage
(NOTE 1) VF
IF = 1 A
CD214A-B320R
CD214A-B340R 0.37
V
CD214A-B360R 0.42
CD214A-B320LR
CD214A-B340LR 0.3
IF = 3 A
CD214A-B320R
CD214A-B340R 0.46 0.5
CD214A-B360R 0.58 0.7
CD214A-B320LR
CD214A-B340LR 0.39 0.42
DC Reverse Current IR
VR =
VRRM
CD214A-B320R
CD214A-B340R
CD214A-B360R
0.02 0.2
mA
CD214A-B320LR
CD214A-B340LR 0.55 1
Typical Junction Capacitance CJ
VR =
4 V,
f = 1.0
MHz
CD214A-B320R
CD214A-B340R 160
pFCD214A-B360R 135
CD214A-B320LR
CD214A-B340LR 120
NOTE: (1) Pulse width 300 microsecond, 1 % duty cycle. Continued on next page.
BOURNS'
3312 - 2 mm SMD Trimming Potentiometer
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214A-B3xR Series Schottky Barrier Rectifier Chip Diode
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter Symbol Condition or Model Min. Typ. Max. Unit
Typical Thermal Resistance
(NOTE 2)
Junction to
Ambient RθJA
CD214A-B320R
CD214A-B340R
CD214A-B360R
86
°C/W
CD214A-B320LR
CD214A-B340LR 55
Junction to
Lead RθJL
CD214A-B320R
CD214A-B340R
CD214A-B360R
24
CD214A-B320LR
CD214A-B340LR 17
NOTE: (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas.
BOURNS‘” — cnzm — cnzm
CD214A-B3xR Series Schottky Barrier Rectifier Chip Diode
Performance Graphs
Forward Current Derating Curve Maximum Peak Forward Surge Current
3.0
1.0
2.0
0
0255075 100 125 150
Average Forward Rectified Current (Amps)
Lead Temperature (°C)
RESISTIVE OR
INDUCTIVE LOAD
PCB MOUNTED ON
5.0 x 5.0 MM (0.2 x 0.2 IN.)
COPPER PAD AREAS
80
10
20
30
40
50
60
70
0
010 100
Peak Forward Surge Current (Amps)
Number of Cycles @ 60 Hz
8.3 ms
Single Half
Sine-Wave
(JEDEC Method)
0.01
0.10
1
10
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (Volts)
CD214A-B320R, -B340R
CD214A-B360R
CD214A-B320LR, -B340LR 0.01
0.1
1
10
100
0.001
02040 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
TJ = 100 °C
TJ = 100 °C
TJ = 80 °C
CD214A-B320R, -B340R
CD214A-B360R
CD214A-B320LR, -B340LR
TJ = 25 °C
TJ = 25 °C
1000
100
10
0.1 1.0 10 100
Junction Capacitance (pF)
Reverse Voltage (Volts)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
CD214A-B3 SERIES
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in
different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Typical Instantaneous Forward Characteristics Typical Reverse Characteristics
Typical Junction Capacitance
3.0
1.0
2.0
0
02550 75 100 125 150
Average Forward Rectified Current (Amps)
Lead Temperature (°C)
RESISTIVE OR
INDUCTIVE LOAD
PCB MOUNTED ON
5.0 x 5.0 MM (0.2 x 0.2 IN.)
COPPER PAD AREAS
80
10
20
30
40
50
60
70
0
010 100
Peak Forward Surge Current (Amps)
Number of Cycles @ 60 Hz
8.3 ms
Single Half
Sine-Wave
(JEDEC Method)
0.01
0.10
1
10
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (Volts)
CD214A-B320R, -B340R
CD214A-B360R
CD214A-B320LR, -B340LR
0.01
0.1
1
10
100
0.001
02040 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
TJ = 100 °C
TJ = 100 °C
TJ = 80 °C
CD214A-B320R, -B340R
CD214A-B360R
CD214A-B320LR, -B340LR
TJ = 25 °C
TJ = 25 °C
1000
100
10
0.1 1.0 10 100
Junction Capacitance (pF)
Reverse Voltage (Volts)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
CD214A-B3 SERIES
3.0
1.0
2.0
0
02550 75 100 125 150
Average Forward Rectified Current (Amps)
Lead Temperature (°C)
RESISTIVE OR
INDUCTIVE LOAD
PCB MOUNTED ON
5.0 x 5.0 MM (0.2 x 0.2 IN.)
COPPER PAD AREAS
80
10
20
30
40
50
60
70
0
010 100
Peak Forward Surge Current (Amps)
Number of Cycles @ 60 Hz
8.3 ms
Single Half
Sine-Wave
(JEDEC Method)
0.01
0.10
1
10
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (Volts)
CD214A-B320R, -B340R
CD214A-B360R
CD214A-B320LR, -B340LR 0.01
0.1
1
10
100
0.001
02040 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
TJ = 100 °C
TJ = 100 °C
TJ = 80 °C
CD214A-B320R, -B340R
CD214A-B360R
CD214A-B320LR, -B340LR
TJ = 25 °C
TJ = 25 °C
1000
100
10
0.1 1.0 10 100
Junction Capacitance (pF)
Reverse Voltage (Volts)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
CD214A-B3 SERIES
3.0
1.0
2.0
0
02550 75 100 125 150
Average Forward Rectified Current (Amps)
Lead Temperature (°C)
RESISTIVE OR
INDUCTIVE LOAD
PCB MOUNTED ON
5.0 x 5.0 MM (0.2 x 0.2 IN.)
COPPER PAD AREAS
80
10
20
30
40
50
60
70
0
010 100
Peak Forward Surge Current (Amps)
Number of Cycles @ 60 Hz
8.3 ms
Single Half
Sine-Wave
(JEDEC Method)
0.01
0.10
1
10
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (Volts)
CD214A-B320R, -B340R
CD214A-B360R
CD214A-B320LR, -B340LR
0.01
0.1
1
10
100
0.001
02040 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
TJ = 100 °C
TJ = 100 °C
TJ = 80 °C
CD214A-B320R, -B340R
CD214A-B360R
CD214A-B320LR, -B340LR
TJ = 25 °C
TJ = 25 °C
1000
100
10
0.1 1.0 10 100
Junction Capacitance (pF)
Reverse Voltage (Volts)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
CD214A-B3 SERIES
3.0
1.0
2.0
0
02550 75 100 125 150
Average Forward Rectified Current (Amps)
Lead Temperature (°C)
RESISTIVE OR
INDUCTIVE LOAD
PCB MOUNTED ON
5.0 x 5.0 MM (0.2 x 0.2 IN.)
COPPER PAD AREAS
80
10
20
30
40
50
60
70
0
010 100
Peak Forward Surge Current (Amps)
Number of Cycles @ 60 Hz
8.3 ms
Single Half
Sine-Wave
(JEDEC Method)
0.01
0.10
1
10
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (Volts)
CD214A-B320R, -B340R
CD214A-B360R
CD214A-B320LR, -B340LR 0.01
0.1
1
10
100
0.001
02040 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
TJ = 100 °C
TJ = 100 °C
TJ = 80 °C
CD214A-B320R, -B340R
CD214A-B360R
CD214A-B320LR, -B340LR
TJ = 25 °C
TJ = 25 °C
1000
100
10
0.1 1.0 10 100
Junction Capacitance (pF)
Reverse Voltage (Volts)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
CD214A-B3 SERIES
BOURNS H%\ ,, 2 so (0 102’ I 47 [0.053) I 27 w [0.050) (0177:0004) 514 220:010 (0 202’ (0 007 t 0 004) 0 50 7 (0 020) 0 95 t 0 20 (0 037 t 0 00a) 0 as +0 207-010 (0 033 +0 0037-0 004) CD4 B30L ¥% F /
F
I
H
BC
DIA. G
A
D D
E
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214A-B3xR Series Schottky Barrier Rectifier Chip Diode
Product Dimensions Recommended Pad Layout
DIMENSIONS: MM
(INCHES)
Dimension CD214A-B3 Series
A4.5 ± 0.10
(0.177 ± 0.004)
B2.20 ± 0.10
(0.087 ± 0.004)
C (Dia.) 0.50
(0.020)
D0.95 ± 0.20
(0.037 ± 0.008)
E0.96 +0.20/-0.10
(0.038 +0.008/-0.004)
DIMENSIONS: MM
(INCHES)
Typical Part Marking
Dimension CD214A-B3 Series
F2.60
(0.102) MAX.
G1.47
(0.058) MIN.
H1.27
(0.050) MIN.
I5.14
(0.202) REF.
DEVICE CODE:
302 = CD214A-B320R
302L = CD214A-B320LR
304 = CD214A-B340R
304L = CD214A-B340LR
306 = CD214A-B360R
302
YWW
DATE CODE:
Y = LAST
DIGIT OF
YEAR
WW = WEEK
NUMBER
How to Order
CD 214A - B 3 20 L R
Common Code
CD = Chip Diode
Package
214A = SMA/DO-214AC Compatible
Model
B = Schottky Barrier Series
Maximum Average Forward Rectified Current
3 = 3 A
Maximum Repetitive Peak Reverse Voltage
20 = 20 V
40 = 40 V
60 = 60 V
Forward Voltage Suffix
L = Low Forward Voltage
Environmental Specifications
Moisture Sensitivity Level ................................................................1
ESD Classification (HBM)............................................................. 3B
BOURNS 245:010 (0096:0004) 475:010 (0187:0004) 151:010 (0059:0004) 150:010 (0059:0004) 178:20 (7 008 t 0 079] 500 (I 959) 130:050 (0 1312:0020) 175:010 (0069:0004) 550:005 (0217:0002) 400:010 (0157:0004) 400:010 (0157:0004) 200:010 (0079:0004) 040 (0016) 1200:030 (o 472:0012) 18 7 10 736) 41% F94 BOURNS '
3312 - 2 mm SMD Trimming Potentiometer
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in
different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214A-B3xR Series Schottky Barrier Rectifier Chip Diode
Packaging Information
.......
.......
....... ..............
....... ..............
P A
F
ET
120 °
D2
DD
1
W1
C
Index Hole
P
0
P
1
W
B
30 pitches
Direction of Feed
30 pitches
End
Trailer Device Leader
Start
d
The product is dispensed in tape and reel format (see diagram below).
DIMENSIONS: MM
(INCHES)
Item Symbol CD214A-B3 Series
Carrier Width A 2.45 ± 0.10
(0.096 ± 0.004)
Carrier Length B4.75 ± 0.10
(0.187 ± 0.004)
Carrier Depth C 1.51 ± 0.10
(0.059 ± 0.004)
Sprocket Hole d1.50 ± 0.10
(0.059 ± 0.004)
Reel Outside Diameter D 178 ± 2.0
(7.008 ± 0.079)
Reel Inner Diameter D1 50.0
(1.969) MIN.
Feed Hole Diameter D2 13.0 ± 0.50
(0.512 ± 0.020)
Sprocket Hole Position E 1.75 ± 0.10
(0.069 ± 0.004)
Punch Hole Position F 5.50 ± 0.05
(0.217 ± 0.002)
Punch Hole Pitch P 4.00 ± 0.10
(0.157 ± 0.004)
Sprocket Hole Pitch P0 4.00 ± 0.10
(0.157 ± 0.004)
Embossment Center P1 2.00 ± 0.10
(0.079 ± 0.004)
Overall Tape Thickness T 0.40
(0.016) MAX.
Tape Width W 12.00 ± 0.30
(0.472 ± 0.012)
Reel Width W118.7
(0.736) MAX.
Quantity per Reel -- 3,000
01/18
Asia-Pacific:
Tel: +886-2 2562-4117
Email: asiacus@bourns.com
Europe:
Tel: +36 88 520 390
Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500
Email: americus@bourns.com
www.bourns.com

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