FDMC007N08LC Datasheet by ON Semiconductor

View All Related Products | Download PDF Datasheet
I=AIRCHILDW ON Semiconductor®
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FAIRCHILDH Pin I
November 2016
©2016 Fairchild Semiconductor Corporation
FDMC007N08LC Rev.1.0
www.fairchildsemi.com
1
FDMC007N08LC N-Channel Shielded Gate PowerTrench® MOSFET
FDMC007N08LC
N-Channel Shielded Gate PowerTrench® MOSFET
80 V, 66 A, 7.0 m
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 7.0 m at VGS = 10 V, ID = 21 A
Max rDS(on) = 10.4 m at VGS = 4.5 V, ID = 17 A
5V Drive Capable
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MV MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized to minimise on-state resistance and yet maintain
superior switching performance with best in class soft body
diode.
Applications
Primary DC-DC MOSFET
Synchronous Rectifier in DC-DC and AC-DC
Motor Drive
Solar
BottomTop
Pin 1
Pin 1
G
D
S
S
S
D
DD
S
S
S
G
D
D
D
D
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 80 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous TC = 25 °C (Note 5) 66
A
-Continuous TC = 100 °C (Note 5) 42
-Continuous TA = 25 °C (Note 1a) 14
-Pulsed (Note 4) 330
EAS Single Pulse Avalanche Energy (Note 3) 150 mJ
PD
Power Dissipation TC = 25 °C 57 W
Power Dissipation TA = 25 °C (Note 1a) 2.4
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RJC Thermal Resistance, Junction to Case 2.2 °C/W
RJA Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC007N08L FDMC007N08LC Power 33 13 ’’ 12 mm 3000 units
www.fairchildsemi.com
2
©2016 Fairchild Semiconductor Corporation
FDMC007N08LC Rev.1.0
FDMC007N08LC N-Channel Shielded Gate PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V 80 V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient ID = 250 A, referenced to 25 °C 45 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 A
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V 100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 120 A 1.0 1.5 2.5 V
VGS(th)
TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 120 A, referenced to 25 °C -5.4 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = 10 V, ID = 21 A 5.7 7.0
mVGS = 4.5 V, ID = 17 A 8.3 10.4
VGS = 10 V, ID = 21 A, TJ = 125 °C 9.9 12.2
gFS Forward Transconductance VDS = 5 V, ID = 21 A 80 S
Ciss Input Capacitance VDS = 40 V, VGS = 0 V,
f = 1 MHz
2100 2940 pF
Coss Output Capacitance 506 710 pF
Crss Reverse Transfer Capacitance 18 30 pF
RgGate Resistance 0.1 0.4 0.8
td(on) Turn-On Delay Time
VDD = 40 V, ID = 21 A,
VGS = 10 V, RGEN = 6
10 20 ns
trRise Time 2.4 10 ns
td(off) Turn-Off Delay Time 24 39 ns
tfFall Time 2.1 10 ns
QgTotal Gate Charge VGS = 0 V to 10 V
VDD = 40 V,
ID = 21 A
29 41 nC
QgTotal Gate Charge VGS = 0 V to 4.5 V 14 19 nC
Qgs Gate to Source Charge 5 nC
Qgd Gate to Drain “Miller” Charge 3 nC
Qoss Output Charge VDD = 40 V, VGS = 0 V 30 nC
Qsync Total Gate Charge Sync. VDS = 0 V, ID = 21 A 27 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.1 0.7 1.2 V
VGS = 0 V, IS = 21 A (Note 2) 0.1 0.8 1.3
trr Reverse Recovery Time IF = 10 A, di/dt = 300 A/s20 32 ns
Qrr Reverse Recovery Charge 27 43 nC
trr Reverse Recovery Time IF = 10 A, di/dt = 1000 A/s14 22 ns
Qrr Reverse Recovery Charge 62 99 nC
Notes:
1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3. EAS of 150 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 10 A, VDD = 80 V, VGS = 10 V, 100% test at L = 0.1 mH, IAS = 33 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
53 °C/W when mounted
on a 1 in2 pad of 2 oz
copper
125 °C/W when mounted
on a minimum pad of 2 oz
copper
G
DF
DS
SF
SS
G
DF
DS
SF
SS
a. b.
NDRMALIZED PULSE DURATION = Br: PULSE DURAncN _ an / / / V PULSE DURATION = an Vs: PULsE DURAYION = 8n
www.fairchildsemi.com
3
©2016 Fairchild Semiconductor Corporation
FDMC007N08LC Rev.1.0
FDMC007N08LC N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
Figure 1.
012345
0
30
60
90
120
150
VGS = 4.5 V
VGS = 10 V
VGS = 6 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
VGS = 3 V
VGS = 8 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0 30 60 90 120 150
0
1
2
3
4
5
VGS = 10 V
VGS = 3 V
VGS = 6 V
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 8 V
VGS = 4.5 V
N o r m a l i z e d O n - R e s i s t a n c e
vs. Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 21 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs. Junction Temperature
Figure 4.
23456
0
10
20
30
40
50
TJ = 125 oC
ID = 21 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (m)
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
O n- Re si st an ce vs . G at e t o
Source Voltage
Figure 5. Transfer Characteristics
123456
0
30
60
90
120
150
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.00.20.40.60.81.01.2
0.001
0.01
0.1
1
10
100
150
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou rc e t o D r a i n D io de
Forward Voltage vs. Source Current
www.fairchildsemi.com
4
©2016 Fairchild Semiconductor Corporation
FDMC007N08LC Rev.1.0
FDMC007N08LC N-Channel Shielded Gate PowerTrench® MOSFET
Figure 7.
0 6 12 18 24 30
0
2
4
6
8
10
ID = 21 A
VDD = 50 V
VDD = 40 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 30 V
Gate Charge Characteristics Figure 8.
0.1 1 10 80
1
10
100
1000
10000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
C a p a c i t a n c e v s . D r a i n
to Source Voltage
F i g u r e 9 . U n c l a m p e d I n d u c t i v e
Switching Capability
0.001 0.01 0.1 1 10 100
1
10
100
TJ = 125 oC
TJ = 25 oC
TJ = 100 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
Figure 10.
25 50 75 100 125 150
0
14
28
42
56
70
VGS = 4.5 V
RJC = 2.2 oC/W
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 11. F o r w a r d Bias Safe
Operating Area
0.1 1 10 100 500
0.1
1
10
100
500
CURVE BENT TO
MEASURED DATA
10 s
100 ms/DC
10 ms
1 ms
100 s
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RJC = 2.2 oC/W
TC = 25 oC
Figure 12.
10-5 10-4 10-3 10-2 10-1 1
10
100
1000
10000
SINGLE PULSE
RJC = 2.2 oC/W
TC = 25 oC
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted.
www.fairchildsemi.com
5
©2016 Fairchild Semiconductor Corporation
FDMC007N08LC Rev.1.0
FDMC007N08LC N-Channel Shielded Gate PowerTrench® MOSFET
Figure 13.
10-5 10-4 10-3 10-2 10-1 1
0.001
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE-DESCENDING ORDER
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
NOTES:
ZJC(t) = r(t) x RJC
RJC = 2.2 oC/W
Duty Cycle, D = t1 / t2
Peak TJ = PDM x ZJC(t) + TC
PDM
t1
t2
Junction-to-Case Transient Thermal Response Curve
Typical Characteristics TJ = 25 °C unless otherwise noted.
\
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. BA,
DATED OCTOBER 2002.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-1994.
E) DRAWING FILE NAME: PQFN08HREV1
8
1
5
4
41
85
LAND PATTERN
RECOMMENDATION
14
85
PKG
C
L
PKG
L
C
PKG L
C
L
C
SYM
PKG
C
L
A
B
SCALE: 2X
SEE
DETAIL A
3.40
3.20
3.40
3.20
1.95
0.65
0.37
0.27 (8X)
0.50
0.30
2.05
1.85
0.10 C A B
(0.34)
(2.27)(0.52 TYP)
0.25
0.15
0.80
0.70
0.10 C
0.08 C0.05
0.00 C
SEATING
PLANE
2.37 MIN
(0.45)
(0.40)
(0.65)
2.15 MIN
0.70 MIN
0.42 MIN
(8X)
1.95
0.65
PIN 1
INDICATOR
(0.33) TYP
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www mm cumrsuerguwaxem Mavkmg gm
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC

Products related to this Datasheet

MOSFET N-CHANNEL 80V 66A 8PQFN