BYT79X-600P Datasheet by WeEn Semiconductors

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#2 mm mm‘um Table 1. Quick reference data §=O.5 :Ths 71 “C Fig. 1 Fig. 2 Fig. 3 TiUnfl) Fig. 4 Fig. 6 Fig. 6 VR = 30
BYT79X-600P
Ultrafast recovery diode
19 October 2017 Product data sheet
1. General description
Ultrafast power diode in a SOD113 (TO-220F) plastic package.
2. Features and benefits
Low on-state loss
Ultra low leakage
Low switching loss
Fast switching
Soft recovery characteristic
High thermal cycling performance
Low thermal resistance
3. Applications
Home appliance power supply
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRreverse voltage DC - - 600 V
IF(AV) average forward
current
δ = 0.5 ; Th 71 °C; square-wave;
Fig. 1; Fig. 2; Fig. 3
- - 15 A
IFRM repetitive peak forward
current
δ = 0.5 ; tp = 25 µs; Th ≤ 71 °C;
square-wave
- - 30 A
tp = 10 ms; Tj(init) = 25 °C; sinusoidal
waveform; Fig. 4
- - 150 AIFSM non-repetitive peak
forward current
tp = 8.3 ms; Tj(init) = 25 °C; sinusoidal
waveform
- - 165 A
Static characteristics
IF = 15 A; Tj = 25 °C; Fig. 6 - 1.1 1.38 VVFforward voltage
IF = 15 A; Tj = 125 °C; Fig. 6 - 0.96 1.25 V
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7
- 50 60 ns
BYT79X-600P Table 2. Plnnlng lnformatlon Table 3. Orderlng lnformatlon Table 4. Markan codes —
WeEn Semiconductors BYT79X-600P
Ultrafast recovery diode
BYT79X-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 19 October 2017 2 / 10
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
mb n.c. mounting base; isolated
21
mb
TO-220F (SOD113)
A
001aaa020
K
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BYT79X-600P TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
SOD113
7. Marking
Table 4. Marking codes
Type number Marking code
BYT79X-600P BYT79X-600P
BYT79X-600P Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). 6:0.5.ThS Fig1 Fig 2 Fig 3 Timmy Fig A
WeEn Semiconductors BYT79X-600P
Ultrafast recovery diode
BYT79X-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 19 October 2017 3 / 10
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse
voltage
- 600 V
VRWM crest working reverse
voltage
- 600 V
VRreverse voltage DC - 600 V
IF(AV) average forward current δ = 0.5 ; Th 71 °C; square-wave; Fig. 1;
Fig. 2; Fig. 3
- 15 A
IFRM repetitive peak forward
current
δ = 0.5 ; tp = 25 µs; Th ≤ 71 °C; square-
wave
- 30 A
tp = 10 ms; Tj(init) = 25 °C; sinusoidal
waveform; Fig. 4
- 150 AIFSM non-repetitive peak
forward current
tp = 8.3 ms; Tj(init) = 25 °C; sinusoidal
waveform
- 165 A
Tstg storage temperature -65 175 °C
Tjjunction temperature - 175 °C
0
4
8 12 16 20 24
0
5
10
15
20
25
30
IF(AV) (A)
Ptot
0.1
aaa029-001
IF(AV) = IF(RMS) × √δ
Vo = 1.055 V; Rs = 0.013 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
0
2.5
5 7.5 10 12.5 15
0
5
10
15
20
25
IF(AV) (A)
P
tot
(W)
a = 1.57
1.9
2.2
2.8
4.0
aaa029-002
a = form factor = I F(RMS) / IF(AV)
Vo = 1.055 V; Rs = 0.013 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
BYT79X-600P
WeEn Semiconductors BYT79X-600P
Ultrafast recovery diode
BYT79X-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 19 October 2017 4 / 10
-50
0 50 100 150 200
0
5
10
15
20
Th (°C)
IF(AV)
(A)
71°C
aaa029-003
Fig. 3. Forward current as a function of heatsink
temperature; maximum values
10
-5
10-4 10-3 10-2
10
10
2
10
3
tp (s)
I
FSM
(A)
aaa029-004
tp
Tj(init) = 25 °C max
IF
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values
BYT79X-600P Table 6. Thermal characteristics 535029005 Table 7. Isolation characteristics
WeEn Semiconductors BYT79X-600P
Ultrafast recovery diode
BYT79X-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 19 October 2017 5 / 10
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-h) thermal resistance
from junction to
heatsink
with heatsink compound; Fig. 5 - - 4.8 K/W
Rth(j-a) thermal resistance
from junction to
ambient free air
in free air - 55 - K/W
aaa029-005
10-1
10-2
1
10
Zth(j-h)
(K/W)
10-3
tp (s)
10-5 1 1010-1
10-2
10-4 10-3
tp
P
t
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse width
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from
all pins to external heatsink; sinusoidal
waveform; clean and dust free
- - 2500 V
Cisol isolation capacitance from cathode to external heatsink - 10 - pF
BYT79X-600P Table 8. Characteristics vR=3o
WeEn Semiconductors BYT79X-600P
Ultrafast recovery diode
BYT79X-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 19 October 2017 6 / 10
11. Characteristics
Table 8. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IF = 15 A; Tj = 25 °C; Fig. 6 - 1.1 1.38 VVFforward voltage
IF = 15 A; Tj = 125 °C; Fig. 6 - 0.96 1.25 V
VR = 600 V; Tj = 25 °C - 1 10 µAIRreverse current
VR = 600 V; Tj = 125 °C - 80 200 µA
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7
- 50 60 ns
IRM peak reverse recovery
current
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 100 °C
- 3 - A
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7
- 60 - nCQrrecovered charge
IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C; Fig. 7
- 60 110 nC
0 0.5 1 1.5 2
0
5
10
15
20
25
30
VF (V)
IF
(A)
aaa029-006
(1) (2) (3)
Vo = 1.055 V; Rs = 0.013 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 6. Forward current as a function of forward voltage
003aac562
trr
time
100 %
25 %
IFdlF
dt
IRIRM
Qr
Fig. 7. Reverse recovery definitions; ramp recovery
BYT79X-600P E© m
WeEn Semiconductors BYT79X-600P
Ultrafast recovery diode
BYT79X-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 19 October 2017 7 / 10
12. Package outline
References
Outline
version
European
projection Issue date
IEC
JEDEC JEITA
SOD113
2-lead TO-220F
sod113_po
07-06-08
15-08-28
Unit
mm
max
nom
min
4.6
2.9
1.1
0.7
15.8 10.3
19.0
3.2 2.6
A
Dimensions (mm are the original dimensions)
Notes
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
3. Dot lines area designs may vary.
4. Eject pin mark is for reference only.
Plastic single- ended package; isolated heatsink mounted;
1 mounting hole; 2- lead TO- 220 full pack
SOD113
A1
b
0.9
b1
c D
E
2.55 0.4 0.8
T(4) w z(2)
e
5.08
HE
max j(3) k(3) L L1(1) L2
max m
6.5
0.5
P Q
2.6
1.7 13.50.4 2.8
4.0
2.5
0.9
0.4
15.2
9.7 3.0 2.3
0.7
6.3
2.7 14.40.6 3.3
q
w
0 5 10 mm
scale
A
A1
c
Q
k(3)
j(3)
m
z(2)
e
1
2
b
E
P
b1
q
D
T(4)
HE
L
L1(1)
L2
Fig. 8. Package outline TO-220F (SOD113)
hem sIgn. ata sheaf Is axplalnsd In same 5 omevIeeIs) assumed In ml; 5 comma": was published all he Imam pmud status lmnr hmgflMwwmaen-eemmom BYT79X-600P
WeEn Semiconductors BYT79X-600P
Ultrafast recovery diode
BYT79X-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 19 October 2017 8 / 10
13. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
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give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability for
the consequences of use of such information. WeEn Semiconductors takes
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Notwithstanding any damages that customer might incur for any reason
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Right to make changes — WeEn Semiconductors reserves the right to
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limitation specifications and product descriptions, at any time and without
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equipment or applications and therefore such inclusion and/or use is at the
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
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customer’s applications and products planned, as well as for the planned
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
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Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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In the event that customer uses the product for design-in and use in
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design and use of the product for automotive applications beyond WeEn
Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
BYT79X-600P
WeEn Semiconductors BYT79X-600P
Ultrafast recovery diode
BYT79X-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 19 October 2017 9 / 10
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
BYT79X-600P
WeEn Semiconductors BYT79X-600P
Ultrafast recovery diode
BYT79X-600P All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 19 October 2017 10 / 10
14. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Isolation characteristics.............................................5
11. Characteristics............................................................6
12. Package outline.......................................................... 7
13. Legal information....................................................... 8
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 19 October 2017

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