TSM6963SD Datasheet by Taiwan Semiconductor Corporation

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5— ® RoHS COMPLIANCE Features Agglication Ordering Information Block Diagram D1 D2 G‘s—i 62H 51 S2
TSM6963SD
20V Dual P-Channel MOSFET
Document Number:
DS_P0000129 1
Version: D15
TSSOP
-
8
Features
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
Load Switch
PA Switch
Ordering Information
Part No. Package
Packing
TSM6963SDCA RVG TSSOP-8 3Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
-20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current, V
GS
@4.5V. I
D
-4.5 A
Pulsed Drain Current, V
GS
@4.5V I
DM
-16 A
Continuous Source Current (Diode Conduction)
a,b
I
S
-1.0 A
Maximum Power Dissipation Ta = 25°C P
D
1.14 W
Ta = 70°C 0.73
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Foot (Drain) Thermal Resistance RӨ
JF
75 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
90 °C/W
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Block Diagram
Dual P-Channel MOSFET
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(m) I
D
(A)
-20
30 @ V
GS
= -4.5V -4.5
42 @ V
GS
= -2.5V -3
68 @ V
GS
= -1.8V -2
Pin
Definition
:
1. Drain 1 8. Drain 2
2. Source 1 7. Source 2
3. Source 1 6. Source 2
4. Gate 1 5. Gate 2
5— ® RoHS COMPLIANCE VDD ton (on Rn (mom—o t. m‘o«.—. VIN > 90% D VouT Outpul‘ VOUT 10%, VGEN 7 INVERYED Re DUT H G s Inpul.VIN10~ Swi‘ching Test Circuit Switchin Waveforms
TSM6963SD
20V Dual P-Channel MOSFET
Document Number:
DS_P0000129 2
Version: D15
Electrical Specifications
(Ta =25°C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250uA BV
DSS
-20 -- -- V
Gate Threshold Voltage V
DS
=V
GS
, I
D
=-250uA V
GS(TH)
-0.5 -0.7 -1.0 V
Zero Gate Voltage Drain Current V
DS
=-16V, V
GS
=0V I
DSS
-- -- -1 uA
Gate Body Leakage V
GS
=±12V, V
DS
=0V I
GSS
-- -- ±100 nA
On-State Drain Current V
DS
=-5V, V
GS
=-4.5V I
D(ON)
-25 -- -- A
Drain-Source On-State Resistance
V
GS
=-4.5V, I
D
=-4.5A
R
DS(ON)
-- 23 30
m V
GS
=-2.5V, I
D
=-3A -- 30 42
V
GS
=-1.8V, I
D
=-2A -- 45 68
Forward Transconductance V
DS
=-5V, I
D
=-4.5A g
fs
-- 16 -- S
Diode Forward Voltage I
S
=-0.5A, V
GS
=0V V
SD
-- - 0.8 -1.3 V
Dynamic
b
Total Gate Charge V
DS
=-10V, I
D
=-4.5A,
V
GS
=-4.5V
Q
g
-- 14 20
nC
Gate-Source Charge Q
gs
-- 2.1 10
Gate-Drain Charge Q
gd
-- 4.7 --
Input Capacitance V
DS
=-10V, V
GS
=0V,
f =1.0MHz
C
iss
-- 1500 --
pF
Output Capacitance C
oss
-- 220 --
Reverse Transfer Capacitance C
rss
-- 160 --
Switching
b,C
Turn-On Delay Time V
DD
=-10V, R
L
=10,
I
D
=-1A, V
GEN
=-4.5V,
R
G
=6
t
d(on)
-- 6 11
nS
Turn-On Rise Time t
r
-- 13 23
Turn-Off Delay Time t
d(off)
-- 86 145
Turn-Off Fall Time t
f
-- 42 70
Notes:
a. pulse test: PW 300µS, duty cycle 2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
5— ® RoHS COMPLIANCE 15 20 l VG< =-3mru="" 1uv="" -2v="" a="" to="" ‘="55°C" a="" 12="" i="" 3="" 16="" 25.16="" i:="" e="" i:="" ‘—="" i="" w="" ._="" e="" 9="" 5="" 12="" 125°c="" 0="" e="" .e="" e="" 9="" 3="" d="" g="" msv="" .="" l="" 2="" 2="" 3="" 4="" 0="" 0="" 0="" 1="" 2="" 3="" 4="" 5="" 0="" 0.5="" 1="" u="" 1="" 5="" 2="" u="" vns="" -="" drain-to-source="" voltage="" (v)="" v55="" 7="" galeitoisource="" voltage="" (v)="" a="" 100="" e="" 5="" c="" a="" v="" ’10v="" 5="" 30="" ._'e="" 4="" —="" is:="" 7a="" i="" \‘d="" 0="" g="" ves="1" av=""> m OJ 3 72 6° / g E / :3 l 40 Gs = 2 5v 0 2 x: 4- o a" /——/ ‘E 20 V65 =4.5v 5 1 E l, n: 0 § 0 0 4 8 12 16 20 D 4 B 12 15 ID . Drain Currem (A) Qg - Total Gate Charge (nC) 1.6 20 g 1-5 2 T1 :15mc g 17‘ :10 E3 1.3 5 m n) t '55 = $11 1‘2 0 “F E ‘1’ 5 .5 1.1 g 2 1 .gv 1.0 8 a 0.9 _;, 1: Bi 0.8 0.5 0.1 -50 -25 0 25 50 75 100 125 150 0 0.2 04 0.5 0.5 1.0 1.2 1.4 Tj - Junction Temperature (“0) Vsn - Source-to-Drain Voltage (V)
TSM6963SD
20V Dual P-Channel MOSFET
Document Number:
DS_P0000129 3
Version: D15
Electrical Characteristics Curve
(Ta = 25°C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
5— ® RoHS COMPLIANCE 0.10 0'3 S 0.5 m 0.08 9 I 250 A (.7 v D : I1 g 19:4 5A 0) 0.4 / 1; 0.05 E / 'a V m / g \ E 0.2 . > E 0.04 I C? \ g 0.0 E z .% 0.02 § / n -D.2 0c 0 -D.4 0 2 4 E 8 1D -50 -25 O 25 50 75 100 125 150 V65 - Gate-lO-SOUFOE Voltage (V) T] - Junction Temperature (”(3) 200‘ 160 g 120 E o 80 ”L 1 4D \ TA = 25°C - mm I Ill 0 IIHII | | || 102 10’l 1 10 100 500 Tiime (sec) 2 1 g Dulycyc18105 E 9 5 0 .IE“ 0.1 5 “—1 I “a _o 1 Duty Cycle,D % 2 Per um Base : WA : ems/w 3 m . rn: PUMAm 0 D1 Slngle Pubs 4 Surface Moumed 1 U4 1 0'3 1 0'2 1D" 1 10 100 EDD Square Wave Pulse Duration (sec)
TSM6963SD
20V Dual P-Channel MOSFET
Document Number:
DS_P0000129 4
Version: D15
Electrical Characteristics Curve
(Ta = 25°C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
5— ® RoHS COMPLIANCE TSSOP—8 Mechanical Drawing O TSC 6963SD YML flflflfi‘ HUGH n n n ~< n="" n="" n="" n="" n="" n="" n="" n="" n="">
TSM6963SD
20V Dual P-Channel MOSFET
Document Number:
DS_P0000129 5
Version: D15
TSSOP-8 Mechanical Drawing
Marking Diagram
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code
TSSOP-8 DIMENSION
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 6.20 6.60 0.244 0.260
a 4.30 4.50 0.170 0.177
B 2.90 3.10 0.114 0.122
C 0.65 (typ) 0.025 (typ)
D 0.25 0.30 0.010 0.019
E 1.05 1.20 0.041 0.049
e 0.05 0.15 0.002 0.009
F 0.127 0.005
L 0.50 0.70 0.020 0.028
TAI ‘ N SEM ONDUCTOR ® RoHS COMPLIANCE
TSM6963SD
20V Dual P-Channel MOSFET
Document Number:
DS_P0000129 6
Version: D15
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.

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