TSM2307CX Datasheet by Taiwan Semiconductor Corporation

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5 ® R6Hs Puma COMFLIANT 23 3% 1 Features Block Diagram 8 Agglicalion ”7 Ordering Information : 25“C
TSM2307CX
30V P-Channel MOSFET
Document Number:
DS_P0000048 1
Version: D15
SOT
-
23
Key Parameter Performance
Parameter Value
Unit
V
DS
-30 V
R
DS(on)
(max)
V
GS
= -10V 95 m
V
GS
= -4.5V
140
Q
g
10 nC
Features
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
Load Switch
PA Switch
Block Diagram
P-Channel MOSFET
Ordering Information
Part No. Package Packing
TSM2307CX RFG SOT-23 3kpcs / 7” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Absolute Maximum Ratings
(T
C
= 25 unless otherwise noted)
Parameter Symbol
Limit Unit
Drain-Source Voltage V
DS
-30 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current
(Note 1)
I
D
-3 A
Pulsed Drain Current
(Note 2)
I
DM
-20 A
Continuous Source Current (Diode Conduction) I
S
-1.7 A
Power Dissipation T
a
= 25 P
D
1.25 W
T
a
= 75 0.8
Operating Junction Temperature T
J
+150
Storage Temperature Range T
STG
-50 to +150
Pin
Definition
:
1. Gate
2. Source
3. Drain
5 TAIWAN SEMICONDUCTOR ® R6Hs ammo COMPLIANT c3 : 25”C
TSM2307CX
30V P-Channel MOSFET
Document Number:
DS_P0000048 2
Version: D15
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case R
ӨJC
75 /W
Thermal Resistance - Junction to Ambient R
ӨJA
130 /W
Electrical Specifications
(T
C
= 25 unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max
Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= -250µA BV
DSS
-30 -- -- V
Drain-Source On-State Resistance V
GS
= -10V, I
D
= -3A R
DS(ON)
-- 76 95 m
V
GS
= -4.5V, I
D
= -2A -- 103 140 m
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250µA V
GS(TH)
-1 -- -3 V
Zero Gate Voltage Drain Current V
DS
= -30V, V
GS
= 0V I
DSS
-- -- -1.0 µA
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ±100
nA
Forward Transconductance
(Note 4)
V
DS
= -10V, I
D
= -6A g
fs
-- 5 -- S
Diode Forward Voltage I
S
= -1.7V, V
GS
= 0V V
SD
-1.2 V
Dynamic
Total Gate Charge
(Note 3,4)
V
DS
= -15V, I
D
= -3A,
V
GS
= -10V
Q
g
-- 10 15
nC
Gate-Source Charge
(Note 3,4)
Q
gs
-- 1.9 --
Gate-Drain Charge
(Note 3,4)
Q
gd
-- 2 --
Input Capacitance V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 565 --
pF
Output Capacitance C
oss
-- 126 --
Reverse Transfer Capacitance C
rss
-- 75 --
Switching
Turn-On Delay Time
(Note 3,4))
V
DD
= -15V, R
L
= 15,
I
D
= -1A, V
GEN
= -10V,
R
G
=6
t
d(on)
-- 10 20
ns
Turn-On Rise Time
(Note 3,4)
t
r
-- 9 20
Turn-Off Delay Time
(Note 3,4)
t
d(off)
-- 27 50
Turn-Off Fall Time
(Note 3,4)
t
f
-- 7 16
Note:
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. Pulse test: pulse width 300µs, duty cycle 2%
4. Switching time is essentially independent of operating temperature.
5 ® R6Hs Da$ru COMPLIANT 15 A 12 S, I Veg : 10v thru N E / 45v “t’ 9 :1 O E 3v E e d o .3 / - 3 0 2v 0 2 4 6 8 1o VDS - Drain-to-Source Voltage (V) 0.5 Q a, 0.4 o c m jg 0.3 w G) “F 6 0.2 v :4 5v 'g as I / z 0.1 0‘2 Vs‘s : 10v 0 0 3 6 9 12 15 In - Drain Current (A) 1.8 I I A Vss : 10v 9 1.6— In:735A CD u g A Ea 1.4 8 'z-‘u / n‘: E 1.2 /7 c _ o E / L" 1.0 E / 8 0.8/ n: 0 6 150 -25 0 25 5o 75 100125150 Tj - Junction Temperatule (0C) Ves - Gate-to-Source Voltage (V) ID - Drain Current (A) Is — Source Current (A) 12 // 10 // 8 5 / Tc=|50°C 4 Tc:25'C 2 / 0 0 1 2 3 4 5 Ves - Gate-to-Source Voltage (V) 10 8 VDS : 15V ID :73A 5 r 4 / 2 0 o 2 4 a 8 10 Q9 - Total Gate Charge (nC) 10 0 Tl : 25"0 .1 0 0.2 0.4 0.6 08 1.0 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V)
TSM2307CX
30V P-Channel MOSFET
Document Number:
DS_P0000048 3
Version: D15
Electrical Characteristics Curve
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
5 ® R6Hs Fa$nl COMPLIANT 0.5 0.3 9/ 0.4 A 0-2 8 a E 0 3 8 0.1 .2 ' F“ 3 ID :raA ': -0 0 DC 9 1': 0-2 . 0 g -0.1 L g / § 0.1 > 3 \ -0 2 p on o -o.3 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 V55 - Gate-to-Source Vo‘tage (V) T] - Junction Temperature (“(2) 12 10 E 8 g s n. 4 ‘ TA : 25“C 2 .- D 10 2 1o" 1 10 100 600 TIime (sec) 2 1 g Duly Cyc‘e : u 5 ‘E 2 S 0 Note .E [1.1 pm. D “'1 . [:_Q_. —° 1 Duiy Cycle, D: L 2 Fe! Umthser WA : 131mm 3 74mm: Pnuzm o M SW9 PM“ 4 SurIane Mounted 10‘ 103 10'2 1D" 1 10 100 500 Square Wave Pulse Duration (sec)
TSM2307CX
30V P-Channel MOSFET
Document Number:
DS_P0000048 4
Version: D15
Electrical Characteristics Curve
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
5 ® R6Hs pan.- COMPUANT SOT-23 Mechanical Drawing 02‘s: 9‘: 0.95 (REF)— Tbfl |+0.4 10.10 “4—.- g H H ° 2.9 11.120 __\ J0~0.15 1.1 :020 f 1.9 (REF) 3 = H i 0 7YM L : y H H 1 2 0.15 (REF! .A—L— 0.45 :0.10
TSM2307CX
30V P-Channel MOSFET
Document Number:
DS_P0000048 5
Version: D15
SOT-23 Mechanical Drawing
Unit: Millimeters
Marking Diagram
07
=
Device Code
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code
TAI 'N SEM ONDUCTOR ® Ro’Hs puma COMPLIANT
TSM2307CX
30V P-Channel MOSFET
Document Number:
DS_P0000048 6
Version: D15
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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