BDX5xx Datasheet by STMicroelectronics

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October 2007 Rev 4 1/7
7
Features
Good hFE linearity
High fT frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
Audio amplifiers
Linear and switching industrial equipment
Description
The devices are manufactured in planar base
island technology with monolithic Darlington
configuration. Figure 1. Internal schematic diagram
TO-220
123
R1 typ.= 10 kR2 typ.= 150
Table 1. Device summary
Order code Marking Package Packaging
BDX53B BDX53B
TO-220 Tube
BDX53C BDX53C
BDX54B BDX54B
BDX54C BDX54C
BDX53B - BDX53C
BDX54B - BDX54C
Complementary power Darlington transistors
www.st.com
2/7
Electrical ratings BDX53B - BDX53C - BDX54B - BDX54C
1 Electrical ratings
Note: For PNP types voltage and current values are negative.
Table 2. Absolute maximum ratings
Symbol Parameter
Value
UnitNPN BDX53B BDX53C
PNP BDX54B BDX54C
VCBO Collector-base voltage (IE = 0) 80 100 V
VCEO Collector-emitter voltage (IB = 0) 80 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
ICCollector current 8 A
ICM Collector peak current (repetitive) 12 A
IBBase current 0.2 mA
PTOT Total dissipation at Tc = 25°C 60 W
Tstg Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150 °C
BDX53B - BDX53C - BDX54B - BDX54C Electrical characteristics
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Note: For PNP types voltage and current values are negative.
Table 3. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
VCEO(sus)(1)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Collector-emitter
sustaining voltage (IB = 0)
IC = 100 mA
for BDX53B - BDX54B
for BDX53C - BDX54C
80
100
V
V
ICBO
Collector cut-off current
(IE = 0)
VCB = 80 V
for BDX53B - BDX54B 0.2 mA
VCB = 100 V
for BDX53C - BDX54C 0.2 mA
ICEO
Collector cut-off current
(IB = 0)
VCE = 40 V
for BDX53B - BDX54B 0.5 mA
VCE = 50 V
for BDX53C - BDX54C 0.5 mA
IEBO
Emitter cut-off current
(IC = 0) VEB = 5 V 2mA
VCE(sat)(1) Collector-emitter saturation
voltage IC = 3 A; IB = 12 mA 2V
VBE(sat)(1) Base-emitter saturation
voltage IC = 3 A; IB = 12 mA 2.5 V
hFE(1) DC current gain IC = 3 A; VCE = 3 V 750
VF(1) Diode forward voltage IF = 3 A;
IF = 8 A;
1.8
2.5
2.5 V
V
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Package mechanical data BDX53B - BDX53C - BDX54B - BDX54C
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
:F was) 4‘ L an FDA 4J1 001557551
BDX53B - BDX53C - BDX54B - BDX54C Package mechanical data
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TO-220 mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.490.70 0.0190.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.231.32 0.0480.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L1314 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
P3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
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Revision history BDX53B - BDX53C - BDX54B - BDX54C
4 Revision history
Table 4. Document revision history
Date Revision Changes
09-Sep-2004 3
23-Oct-2007 4 Technology change from epibase to planar (PCN APM-
PWR/07/2417 and APM-PWR/07/2615)
BDX53B - BDX53C - BDX54B - BDX54C Revision history
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