IRF8707PbF Datasheet by Infineon Technologies

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Internatioml ISER Rectifier max Conlinuous Dram Currenl, V 5 @ 10V Conlinuous Dram Currenl, V s @ 10V u ram urren Linear Deratin Faclor :u JunchonrtorDram Lead (5) JunchonrlorAmblent @(E)
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10/24/07
IRF8707PbF
HEXFET® Power MOSFET
Notes through are on page 9
Benefits
lVery Low Gate Charge
lVery Low RDS(on) at 4.5V VGS
lUltra-Low Gate Impedance
lFully Characterized Avalanche Voltage
and Current
l20V VGS Max. Gate Rating
l100% tested for Rg
lLead-Free
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated
DC-DC Converters in Networking
Systems
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
SO-8
VDSS RDS(on) max Qg
30V 11.9m @VGS = 10V 6.2nC
Description
The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratin
g
s
Parameter Units
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TA = 70°C Power Dissipation
Linear Derating Factor W/°C
TJ Operating Junction and
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20
RθJA Junction-to-Ambient ––– 50 °C/W
V
A
W
°C
Max.
11
9.1
88
± 20
30
-55 to + 150
2.5
0.02
1.6
PD - 96118A
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S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒVDSS
/
TJ Breakdown Voltage Temp. Coefficient –– 0.022 –– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 9.3 11.9
––– 14.2 17.5
VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V
VGS(th) Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
IGSS Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– –– -100
gfs Forward Transconductance 25 –– ––– S
QgTotal Gate Charge –– 6.2 9.3
Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.4 ––
Qgs2 Post-Vth Gate-to-Source Charge ––– 0.7 ––
Qgd Gate-to-Drain Charge ––– 2.2 ––
Qgodr Gate Charge Overdrive ––– 1.9 –– See Figs. 15 & 16
Qsw Switch Char
g
e (Qgs2 + Qgd)––– 2.9 ––
Qoss Output Charge ––– 3.7 –– nC
RgGate Resistance ––– 2.2 3.7
td(on) Turn-On Delay Time ––– 6.7 ––
trRise Time ––– 7.9 –––
td(off) Turn-Off Delay Time –– 7.3 ––
tfFall Time –– 4.4 –––
Ciss Input Capacitance ––– 760 –––
Coss Output Capacitance ––– 170 –––
Crss Reverse Transfer Capacitance ––– 82 ––
Avalanche Characteristics
Parameter Units
EAS
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
mJ
IAR
A
va
l
anc
h
e
C
urrent
A
Diode Characteristics
Parameter Min. T
y
p. Max. Units
ISContinuous Source Current ––– –––
(Body Diode)
ISM Pulsed Source Current ––– ––
Bod
Diode
VSD Diode Forward Voltage –– –– 1.0 V
trr Reverse Recovery Time ––– 12 18 ns
Qrr Reverse Recovery Charge ––– 13 20 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
See Fig. 18
Max.
53
8.8
ƒ = 1.0MHz
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 11A
MOSFET symbol
VDS = VGS, ID = 25µA
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ID = 8.8A
VDS = 15V
VGS = 20V
VGS = -20V
VDS = 24V, VGS = 0V
TJ = 25°C, IF = 8.8A, VDD = 15V
di/dt = 300A/
µ
s
TJ = 25°C, IS = 8.8A, VGS = 0V
showing the
integral reverse
p-n junction diode.
VGS = 4.5V, ID = 8.8A
VGS = 4.5V
Typ.
–––
VDS = VGS, ID = 25µA
RG = 1.8
VDS = 15V, ID = 8.8A
VDS = 24V, VGS = 0V, TJ = 125°C
µA
nA
ID = 8.8A
VGS = 0V
VDS = 15V
nC
ns
pF
m
A3.1
88 A
–––
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IRF8707PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 11A
VGS = 10V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.3V
60µs PULSE WIDTH
Tj = 25°C
2.3V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
2.3V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.3V
123456
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 15V
60µs PULSE WIDTH
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TA = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
012345678
QG, Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
ID= 8.8A
mcrmmfla‘ IEER Pecflhc' INGLE PULSE Tfjfij l J, l; l
IRF8707PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
25 50 75 100 125 150
TA , Ambient Temperature (°C)
0
2
4
6
8
10
12
ID, Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
Thermal Response ( Z thJA ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W) τi (sec)
2.2284 0.000169
7.0956 0.013738
25.4895 0.68725
15.1981 25.8
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci= τi/Ri
Ci= τi/Ri
τA
τA
τ4
τ4
R4
R4
Notes:
1. Duty factor D = t / t
2
. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.0
1.3
1.6
1.9
2.2
2.5
VGS(th), Gate Threshold Voltage (V)
ID = 25µA
ID = 250µA
movna'kmo‘ IEER Recflhe' / // H“ US i Fig 14. Unelamped Inducxive Test ercun and Waveform vas Vas Vgsl away 096 Dng On Fig 16. Gate Charge Wave
IRF8707PbF
6www.irf.com
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 15. Gate Charge Test Circuit
1K
VCC
DUT
0
L
S
20K
Fig 14. Unclamped Inductive Test Circuit
and Waveform
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 16. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
5
10
15
20
25
30
35
RDS(on), Drain-to -Source On Resistance (m)
ID = 11A
TJ = 25°C
TJ = 125°C
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 0.67A
0.82A
BOTTOM 8.80A
Internationcd I
IRF8707PbF
www.irf.com 7
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
td(on) trtd(off) tf
VDS
Pulse Width 1 µs
Duty Factor 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
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IRF8707PbF
8www.irf.com
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Internationoi I
IRF8707PbF
www.irf.com 9
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.38mH, RG = 25, IAS = 8.8A.
Pulse width 400µs; duty cycle 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2007
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package

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