SQ2319ADS Datasheet by Vishay Siliconix

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VISHAY. ”mam; ® p. m. RoHS comm 7 HALOGEN www Isha .com/doc.99912 FREE o—l aulamoslecnsugpanalwshaymm www.v\shay.com/doc?91000
SQ2319ADS
www.vishay.com Vishay Siliconix
S15-2366-Rev. A, 12-Oct-15 1Document Number: 76397
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 40 V (D-S) MOSFET
Marking Code: 9F
FEATURES
• TrenchFET® power MOSFET
AEC-Q101 qualified c
100 % Rg and UIS tested
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
VDS (V) -40
RDS(on) (Ω) at VGS = -10 V 0.075
RDS(on) (Ω) at VGS = -4.5 V 0.145
ID (A) -4.6
Configuration Single
Package SOT-23
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
-4.6
A
TC = 125 °C -2
Continuous Source Current (Diode Conduction) IS-2.2
Pulsed Drain Current aIDM -18
Single Pulse Avalanche Current L = 0.1 mH IAS -13
Single Pulse Avalanche Energy EAS 8.4 mJ
Maximum Power Dissipation aTC = 25 °C PD
2.5 W
TC = 125 °C 0.5
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount b RthJA 166 °C/W
Junction-to-Foot (Drain) RthJF 50
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SQ2319ADS
www.vishay.com Vishay Siliconix
S15-2366-Rev. A, 12-Oct-15 2Document Number: 76397
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = -250 μA -40 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = -40 V - - -1
μA VGS = 0 V VDS = -40 V, TJ = 125 °C - - -50
VGS = 0 V VDS = -40 V, TJ = 150 °C - - -150
On-State Drain Current a ID(on) V
GS = -10 V VDS -5 V -10 - - A
Drain-Source On-State Resistance a RDS(on)
VGS = -10 V ID = -3 A - 0.068 0.075
Ω
VGS = -10 V ID = -3 A, TJ = 125 °C - 0.105 -
VGS = -10 V ID = -3 A, TJ = 150 °C - 0.115 -
VGS = -4.5 V ID = -2.4 A - 0.105 0.145
Forward Transconductance b gfs VDS = -5 V, ID = -3 A - 8 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = -20 V, f = 1 MHz
- 464 620
pF Output Capacitance Coss -90120
Reverse Transfer Capacitance Crss -5370
Total Gate Charge c Qg
VGS = -10 V VDS = -20 V, ID = -3 A
-10.516
nC Gate-Source Charge c Qgs -1.4-
Gate-Drain Charge c Qgd -2.7-
Gate Resistance Rg f = 1 MHz 2.1 4.3 6.4 Ω
Turn-On Delay Time c td(on)
VDD = -20 V, RL = 6.7 Ω
ID -3 A, VGEN = -10 V, Rg = 1 Ω
-48
ns
Rise Time c tr -1828
Turn-Off Delay Time c td(off) -1727
Fall Time c tf -1727
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM ---18A
Forward Voltage VSD IF = -1.5 A, VGS = 0 - -0.8 -1.2 V
— VISHAY. V // // // / f/f
SQ2319ADS
www.vishay.com Vishay Siliconix
S15-2366-Rev. A, 12-Oct-15 3Document Number: 76397
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
4
8
12
16
20
0246810
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 5 V
VGS = 3 V
VGS = 2 V
VGS = 4 V
0
4
8
12
16
20
0246810
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
TC= -55 °C
TC= 125 °C
TC= 25 °C
0.00
0.05
0.10
0.15
0.20
0.25
0 4 8 12 16 20
RDS(on) -On-Resistance (Ω)
ID- Drain Current (A)
VGS =10 V
VGS = 4.5 V
0
1
2
3
4
5
012345
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
TC= -55 °C
TC= 125 °C
TC= 25 °C
0
2
4
6
8
10
012345
gfs-Transconductance (S)
ID- Drain Current (A)
TC= 125 °C
TC= -55 °C
TC= 25 °C
0
200
400
600
800
0 10203040
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
VISHAY. /\\ automostecnsugpanalwshaymm www.v\shay,com/doc?91000
SQ2319ADS
www.vishay.com Vishay Siliconix
S15-2366-Rev. A, 12-Oct-15 4Document Number: 76397
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
0
2
4
6
8
10
036912
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 3 A
V
DS
= 20 V
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS-Source Current (A)
VSD-Source-to-Drain Voltage (V)
TJ= 25 °C
TJ= 150 °C
-0.5
-0.2
0.1
0.4
0.7
1.0
-50 -25 0 25 50 75 100 125 150
VGS(th) Variance (V)
TJ- Temperature (°C)
ID= 250 μA
ID= 5 mA
0.5
0.8
1.1
1.4
1.7
2.0
-50-250 255075100125150
RDS(on) -On-Resistance
(Normalized)
TJ- Junction Temperature (°C)
ID= 3 A
VGS = 4.5 V
VGS = 10 V
-55
-52
-49
-46
-43
-40
-50-250 255075100125150
VDS-Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
ID= 1 mA
VISHAY. automostechsugpanalwshaymm www.v\shay,com/doc?91000
SQ2319ADS
www.vishay.com Vishay Siliconix
S15-2366-Rev. A, 12-Oct-15 5Document Number: 76397
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID- Drain Current (A)
VDS- Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on)(1)
TC= 25 °C
Single pulse
BVDSS limited
100 ms, 1 s, 10 s
10 ms
1 ms
DC
t
neisnarT evitceffE dezilamroN
ecnadepmI lamrehT
2
1
0.1
0.01
Square Wave Pulse Duration (s)
10
-4
10
-3
10
-2
10
-1
110 600
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - T A = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
100
VISHAY. www.mshaz cum/Egg’76397 automostecnsugpanalwshaymm www.v\shay,com/doc?91000
SQ2319ADS
www.vishay.com Vishay Siliconix
S15-2366-Rev. A, 12-Oct-15 6Document Number: 76397
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76397.
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE dezilamroN
ecnadepm
I
lam
r
ehT
— VISHAYm V
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
VISHAY ‘5 H u 0394 o 037 ‘ u ass
AN807
Vishay Siliconix
Document Number: 70739
26-Nov-03
www.vishay.com
1
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
ambient air. This pattern uses all the available area underneath the
body for this purpose.
FIGURE 1. Footprint With Copper Spreading
0.114
2.9
0.059
1.5
0.0394
1.0
0.037
0.95
0.150
3.8
0.081
2.05
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
— VISHAY.. mos (2 692) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} D, Rex men Number 72609 on 2er ca
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
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— VISHAY. V
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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