ST12100S Datasheet by SMC Diode Solutions

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DlDDE SDLUTlDNS ST121OOS TO-277B K 'C Anode 1 Cathcde l—( Anode: RDHS ® 150”C T4 operation Low forward voltage drop High purity, high temperature epoxy encapsulation for High frequency operation Guard ring for enhanced ruggedness and long term Trench MOS Schottky technology ”-A" is an AEC-Q101 qualified device Thi is a Pb - Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Switching power supply Converters Free-Wheeling diodes Reverse battery protection Characteristics Symbol Condition Max. Units Peak Repetitive Reverse Voltage V » Working Peak Rever VRw DC Blocking Voltage VR 50% duty cycle @Tt:125°ci rectangular waveform Peak One Cycle Non»Repetitive Surge Characteristics Symbol Condition Typ. Max. Units Fonward Voltage Drop" @ 5A, Pulse. TJ : 25 “C 0 50 » @ 12A. Pulse, Tl : 25 “C 0 70 0 47 Reverse Current~ @VR : rated V TJ : 25 C Reverse Current~ @V : rated V TJ : 25 C Junction Capacitance @VR : 5V, T ” fsic : TMHZ .China — Germany - Korea — Singapore — United States.
Technical Data
Data Sheet N1041, Rev. E
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
ST12100S
ST12100S SCHOTTKY RECTIFIER
Characteristics
Symbol
Condition
Typ.
Max.
Units
Forward Voltage Drop*
VF1
@ 5A, Pulse, TJ= 25 C
@ 12A, Pulse, TJ= 25 C
0.50
0.68
-
0.70
V
VF2
@ 5A, Pulse, TJ= 125 C
@ 12A, Pulse, TJ= 125 C
0.47
0.61
-
0.64
V
Reverse Current*
IR1
@VR= rated VR
TJ= 25 C
0.02
0.3
mA
Reverse Current*
IR2
@VR= rated VR
TJ= 125 C
28
50
mA
Junction Capacitance
CT
@VR= 5V, TC= 25 C
fSIG = 1MHz
600
-
pF
* Pulse width < 300 µs, duty cycle < 2%
Features
Applications
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
-
100
V
Average Rectified Forward Current
IF (AV)
50% duty cycle @TL=125°C,
rectangular wave form
12
A
Peak One Cycle Non-Repetitive Surge
Current
IFSM
8.3ms, Half Sine pulse, TJ= 25 C
200
A
Electrical Characteristics:
150
C TJoperation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Trench MOS Schottky technology
-A is an AEC-Q101 qualified device
This is a Pb Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
TO-277B
Dunn: snLuwuNs ST121OOS RoHS @ Junction Temperature » -55 to +150 DC Storage Temperature » -55 to +150 DC Ambient (NOTE1) Typrca‘ Therma‘ Resistance Junclron Io Lead (NOTE1) Typrca‘ Therma‘ Resistance Junclron Io Approxrmale Wergnl WI Figure 2 Figure1 Typical Forward Characteristics 10 Instabta beous Forward Cu rrent -l,(A) o ‘OOJ 0.3 ' 0.5 ' 0:7 0:5 ' 1:1 Forward Voltage -VF(V) 1.3 . Typical Reverse Characteristics ,x 1020 7 An 7 so so 100 Reverse Voltage -VI(V) FigureJ Typical Junc|ion Capacitance 10000 ,,:,::r:‘ IOOD é 6 Juncllon Capacitance -(:Y (PF) Instabtabeous Reverse Current JAN) ‘0 IS 20 25 30 35 40 Reverse Voltage -VR(V) cChina - Germany - Korea - Singapore - United States-
Technical Data
Data Sheet N1041, Rev. E
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
ST12100S
Characteristics
Symbol
Condition
Specification
Units
Junction Temperature
TJ
-
-55 to +150
C
Storage Temperature
Tstg
-
-55 to +150
C
Typical Thermal Resistance Junction to
Ambient (NOTE1)
RJA
DC operation
75
C/W
Typical Thermal Resistance Junction to
Lead (NOTE1)
RJL
DC operation
4
C/W
Approximate Weight
wt
-
0.08
g
NOTE: 1. Units mounted on P.C.B., 0.5 x 0.5” (30 x 30mm) copper pads.
Thermal-Mechanical Specifications:
Ratings and Characteristics Curves
A *S'Mfii man: SDLUTWUNS ST121OOS RoHS @ Mechanical Dimensions TO-277B Devlce Package Shlpplng Millimeters Inches Min. Max. Min. Max. Millimeters Min. Max. A 4.28 4.48 B 6.80 7.10 C 1.30 1.50 E 1.65 1.85 F 5.40 5.60 P 7.90 8.10 PO 3.90 4.10 T121005 T1210057A Where xxxxx ‘5 VVWWL .China — Germany - Korea — Singapore — United States.
Technical Data
Data Sheet N1041, Rev. E
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
ST12100S
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
SYMBOL
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.95
1.25
0.037
0.049
A1
0.20
0.30
0.008
0.012
b
0.85
0.95
0.033
0.037
b1
1.70
1.90
0.067
0.075
D
3.88
4.08
0.153
0.161
D1
2.90
3.20
0.114
0.126
e
1.74
1.94
0.069
0.076
E
6.30
6.70
0.248
0.264
E1
5.28
5.48
0.208
0.216
E2
3.40
3.70
0.134
0.146
L
0.70
1.00
0.028
0.039
L1
0.41
0.71
0.016
0.028
W
1.10
1.40
0.043
0.055
Mechanical Dimensions TO-277B
Carrier Tape Specification TO-277B
SYMBOL
Millimeters
Min.
Max.
A
4.28
4.48
B
6.80
7.10
C
1.30
1.50
d
1.40
1.60
d1
-
1.50
E
1.65
1.85
F
5.40
5.60
P
7.90
8.10
P0
3.90
4.10
T
0.24
0.44
W
11.70
12.30
Marking Diagram
Device
Package
Shipping
ST12100S
TO-277B(Pb-Free)
5000pcs/ reel
Where XXXXX is YYWWL
T = Device Type
12 = Forward Current (12A)
100 = Reverse Voltage (100V)
S = Package type
-A = AEC-Q101
YY = Year
WW = Week
L = Lot Number
CautionsMolding resin
Epoxy resin UL:94V-0
A SM‘Hi ST121OOS RoHS ® DISCLAIMER: .China — Germany - Korea — Singapore — United States.
Technical Data
Data Sheet N1041, Rev. E
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
ST12100S
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property
claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
Diode Solutions.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..

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