SQ2362ES Datasheet by Vishay Siliconix

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SQ2362ES
www.vishay.com Vishay Siliconix
S15-1820-Rev. A, 10-Aug-15 1Document Number: 62913
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
Marking Code: 8Z
FEATURES
• TrenchFET® power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
VDS (V) 60
RDS(on) (Ω) at VGS = 10 V 0.068
RDS(on) (Ω) at VGS = 4.5 V 0.075
ID (A) 4.3
Configuration Single
Package SOT-23
D
G
S
N-Channel MOSFET
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
4.3
A
TC = 125 °C 2.5
Continuous Source Current (Diode Conduction) IS3.8
Pulsed Drain Current aIDM 17
Single Pulse Avalanche Current L = 0.1 mH IAS 12
Single Pulse Avalanche Energy EAS 7mJ
Maximum Power Dissipation aTC = 25 °C PD
3W
TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount b RthJA 166 °C/W
Junction-to-Foot (Drain) RthJF 50
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SQ2362ES
www.vishay.com Vishay Siliconix
S15-1820-Rev. A, 10-Aug-15 2Document Number: 62913
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 60 V - - 1
μA VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150
On-State Drain Current a I
D(on) V
GS = 10 V VDS 5 V 10 - - A
Drain-Source On-State Resistance a R
DS(on)
VGS = 10 V ID = 2.4 A - 0.057 0.068
Ω
VGS = 10 V ID = 2.4 A, TJ = 125 °C - - 0.114
VGS = 10 V ID = 2.4 A, TJ = 175 °C - - 0.147
VGS = 4.5 V ID = 2.3 A - 0.062 0.075
Forward Transconductance b gfs VDS = 15 V, ID = 2.4 A - 10 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = 30 V, f = 1 MHz
- 440 550
pF Output Capacitance Coss -5063
Reverse Transfer Capacitance Crss -2226
Total Gate Charge c Qg
VGS = 10 V VDS = 30 V, ID = 2.4 A
-7.612
nC Gate-Source Charge c Qgs -1.1-
Gate-Drain Charge c Qgd -2.7-
Gate Resistance Rg f = 1 MHz 1.3 2.7 4.1 Ω
Turn-On Delay Time ctd(on)
VDD = 30 V, RL = 12.5 Ω
ID 2.4 A, VGEN = 10 V, Rg = 1 Ω
-610
ns
Rise Time c tr -2030
Turn-Off Delay Time c td(off) -1421
Fall Time c tf -1830
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM --17A
Forward Voltage VSD IF = 1.7 A, VGS = 0 V - 0.8 1.2 V
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SQ2362ES
www.vishay.com Vishay Siliconix
S15-1820-Rev. A, 10-Aug-15 3Document Number: 62913
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
4
8
12
16
20
0 1 2 3 4 5
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS
= 10 V thru 4 V
VGS = 3 V
VGS = 2 V
0
1
2
3
4
5
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25
°
C
T
C
= - 55 °C
T
C
= 125
°
C
0.00
0.03
0.06
0.09
0.12
0.15
0 4 8 12 16 20
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
4
8
12
16
20
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55
°
C
T
C
= 125 °C
T
C
= 25
°
C
0
8
16
24
32
40
0.0 1.2 2.4 3.6 4.8 6.0
gfs - Transconductance (S)
ID - Drain Current (A)
T
C
= 125
°
C
TC = - 55 °C
T
C
= 25
°
C
0
100
200
300
400
500
600
0 15304560
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
VISHAY. automostecnsugpanalwshaymm www.v\shay,com/doc?91000
SQ2362ES
www.vishay.com Vishay Siliconix
S15-1820-Rev. A, 10-Aug-15 4Document Number: 62913
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 25 °C
TJ = 150 °C
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150 175
VGS(th) Variance (V)
TJ - Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.5
1.0
1.5
2.0
2.5
- 50 - 25 0 25 50 75 100 125 150 175
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 3.9 A
V
GS
= 4.5 V
V
GS
= 10 V
0.00
0.05
0.10
0.15
0.20
0.25
0 2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
65
69
73
77
81
85
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA
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SQ2362ES
www.vishay.com Vishay Siliconix
S15-1820-Rev. A, 10-Aug-15 5Document Number: 62913
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100 ms
Limited by R
DS
(
on
)
*
1 ms
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
1s, 10 s, DC
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
2
1
0.1
0.01
Square Wave Pulse Duration (s)
10-4 10-3 10-2 10-1 1 10 600
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - T A = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
100
VISHAY. www.mshay Cum/ggg’b‘2913 automostecnsugpanalwshaymm www.v\shay,com/doc?91000
SQ2362ES
www.vishay.com Vishay Siliconix
S15-1820-Rev. A, 10-Aug-15 6Document Number: 62913
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62913.
10
-3 10
-2 110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT ev
i
tceffE de
z
ilamroN
ecnadepmI
la
mre
hT
— VISHAYm V
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
— VISHAY.. mos (2 692) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} D, Rex men Number 72609 on 2er ca
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
Return to Index
Return to Index
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Revision: 09-Jul-2021 1Document Number: 91000
Disclaimer
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