SQD40P10-40L Datasheet by Vishay Siliconix

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SQD40P10-40L
www.vishay.com Vishay Siliconix
S11-1559-Rev. B 22-Aug-11 1Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
® Power MOSFET
Package with Low Thermal Resistance
AEC-Q101 Qualifiedd
•100 % R
g and UIS Tested
Compliant to RoHS Directive 2002/95/EC
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
VDS (V) - 100
RDS(on) () at VGS = - 10 V 0.040
RDS(on) () at VGS = - 4.5 V 0.048
ID (A) - 38
Configuration Single
S
G
D
P-Channel MOSFET
TO-252
SGD
Top View
Drain Connected to Tab
ORDERING INFORMATION
Package TO-252
Lead (Pb)-free and Halogen-free SQD40P10-40L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
- 38
A
TC = 125 °C - 22
Continuous Source Current (Diode Conduction)aIS- 50
Pulsed Drain CurrentbIDM - 150
Single Pulse Avalanche Current L = 0.1 mH IAS - 44
Single Pulse Avalanche Energy EAS 96 mJ
Maximum Power DissipationbTC = 25 °C PD
136 W
TC = 125 °C 45
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB MountcRthJA 50 °C/W
Junction-to-Case (Drain) RthJC 1.1
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SQD40P10-40L
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S11-1559-Rev. B 22-Aug-11 2Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 100 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 1.0 - 2.0 - 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = - 100 V --- 1
μA
VGS = 0 V VDS = - 100 V, TJ = 125 °C --- 50
VGS = 0 V VDS = - 100 V, TJ = 175 °C - - - 250
On-State Drain Currenta ID(on) V
GS = - 10 V VDS- 5 V - 30 - - A
Drain-Source On-State Resistancea RDS(on)
VGS = - 10 V ID = - 9.2 A - 0.033 0.040
VGS = - 10 V ID = - 9.2 A, TJ = 125 °C - - 0.074
VGS = - 10 V ID = - 9.2 A, TJ = 175 °C - - 0.093
VGS = - 4.5 V ID = - 7.7 A - 0.037 0.048
Forward Transconductancebgfs VDS = - 15 V, ID = - 9.2 A -35-S
Dynamicb
Input Capacitance Ciss
VGS = 0 V VDS = - 25 V, f = 1 MHz
- 4433 5545
pF Output Capacitance Coss - 301 380
Reverse Transfer Capacitance Crss - 208 260
Total Gate ChargecQg
VGS = - 10 V VDS = - 50V, ID = - 9.2 A
- 96 144
nC
Gate-Source ChargecQgs -8.4-
Gate-Drain ChargecQgd - 23.5 -
Gate Resistance Rgf = 1 MHz 1.5 3.13 4.7
Turn-On Delay Timectd(on)
VDD = - 50 V, RL = 6.49
ID - 7.7 A, VGEN = - 10 V, Rg = 1.0
-1117
ns
Rise Timectr -1117
Turn-Off Delay Timectd(off) - 78 117
Fall Timectf -1523
Source-Drain Diode Ratings and Characteristicsb
Pulsed CurrentaISM - - - 150 A
Forward Voltage VSD IF = - 7.7 A, VGS = 0 V -- 0.8- 1.5V
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SQD40P10-40L
www.vishay.com Vishay Siliconix
S11-1559-Rev. B 22-Aug-11 3Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
8
16
24
32
40
0 2 4 6 8 10
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
VGS = 3 V
0
2
4
6
8
10
0 1 2 3 4 5
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
TC= 125 °CTC= - 55 °C
TC= 25 °C
0.00
0.02
0.04
0.06
0.08
0.10
0 8 16 24 32 40
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
8
16
24
32
40
0 1 2 3 4 5
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
C
0
1000
2000
3000
4000
5000
6000
7000
0 20 40 60 80 100
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
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SQD40P10-40L
www.vishay.com Vishay Siliconix
S11-1559-Rev. B 22-Aug-11 4Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
0
2
4
6
8
10
0 10 20 30 40 50 60 70 80 90 100
VGS -Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
ID= 9.2 A
V
DS
= 50 V
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS-Source Current (A)
VSD-Source-to-Drain Voltage (V)
TJ= 25 °C
TJ= 150 °C
-0.4
-0.1
0.2
0.5
0.8
1.1
- 50 - 25 0 25 50 75 100 125 150 175
VGS(th) Variance (V)
TJ-Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.5
1.0
1.5
2.0
2.5
- 50 - 25 0 25 50 75 100 125 150 175
R
DS(on)
-On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 9.2 A
V
GS
= 4.5 V
V
GS
= 10 V
0.00
0.05
0.10
0.15
0.20
0.25
0246810
R
DS(on)
-On-Resistance (Ω)
V
GS
-Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
-135
-130
-125
-120
-115
-110
-105
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
-Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 10 mA
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SQD40P10-40L
www.vishay.com Vishay Siliconix
S11-1559-Rev. B 22-Aug-11 5Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Case
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100 ms
Limited by R
DS(on)
*
1 ms
IDM Limited
TC= 25 °C
Single PulseBVDSS Limited
10 ms
100 μs
1 s,10 s, DC
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 10-1
Normalized Effective Transient
Thermal Impedance
1
0.2
0.1
0.05
Duty Cycle = 0.5
Single Pulse
0.02
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SQD40P10-40L
www.vishay.com Vishay Siliconix
S11-1559-Rev. B 22-Aug-11 6Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67022.
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA =50 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
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Package Information
www.vishay.com Vishay Siliconix
Revision: 02-Sep-13 1Document Number: 64424
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-252AA Case Outline
Note
Dimension L3 is for reference only.
L3
D
L4
L5
bb2
e1
E1
D1
C
A1
gage plane height (0.5 mm)
e
b3
E
C2
A
L
H
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
D 5.97 6.22 0.235 0.245
D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
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Application Note 826
Vishay Siliconix
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.420
(10.668)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
0.243
(6.180)
0.087
(2.202)
0.090
(2.286)
Return to Index
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Revision: 08-Feb-17 1Document Number: 91000
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