SQ2389ES Datasheet by Vishay Siliconix

View All Related Products | Download PDF Datasheet
VISHAY. Isha .com/doc’19991 2 www ”mam; ® my... RoHS comm HALOGEN FREE automostecnsugpanalwshaymm www.v\shay,com/doc?91000
SQ2389ES
www.vishay.com Vishay Siliconix
S15-0166-Rev. A, 02-Feb-15 1Document Number: 63248
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
Marking Code: 9Axxx
FEATURES
• TrenchFET® power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
VDS (V) -40
RDS(on) (Ω) at VGS = -10 V 0.094
RDS(on) (Ω) at VGS = -4.5 V 0.188
ID (A) -4.1
Configuration Single
P-Channel MOSFET
S
D
G
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
ORDERING INFORMATION
Package SOT-23
Lead (Pb)-free and Halogen-free SQ2389ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
-4.1
A
TC = 125 °C -2.4
Continuous Source Current (Diode Conduction) IS-3.6
Pulsed Drain Current aIDM -16
Single Pulse Avalanche Current L = 0.1 mH IAS -12
Single Pulse Avalanche Energy EAS 7.2 mJ
Maximum Power Dissipation aTC = 25 °C PD
3W
TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount b RthJA 166 °C/W
Junction-to-Foot (Drain) RthJF 50
VISHAY. automostechsugpanalwshaymm www.v\shay,com/doc?91000
SQ2389ES
www.vishay.com Vishay Siliconix
S15-0166-Rev. A, 02-Feb-15 2Document Number: 63248
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -40 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = -40 V - - -1
μA VGS = 0 V VDS = -40 V, TJ = 125 °C - - -50
VGS = 0 V VDS = -40 V, TJ = 175 °C - - -150
On-State Drain Current a I
D(on) V
GS = -10 V VDS -5 V -10 - - A
Drain-Source On-State Resistance a R
DS(on)
VGS = -10 V ID = -3 A - 0.084 0.094
Ω
VGS = -10 V ID = -3 A, TJ = 125 °C - - 0.144
VGS = -10 V ID = -3 A, TJ = 175 °C - - 0.169
VGS = -4.5 V ID = -3 A - 0.140 0.188
Forward Transconductance b gfs VDS = -10 V, ID = -3 A - 5 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = -20 V, f = 1 MHz
- 360 420
pF Output Capacitance Coss -80100
Reverse Transfer Capacitance Crss -4254
Total Gate Charge c Qg
VGS = -10 V VDS = -20 V, ID = -3 A
-8.212
nC Gate-Source Charge c Qgs -1.1-
Gate-Drain Charge c Qgd -3-
Gate Resistance Rg f = 1 MHz 3.1 4.1 7 Ω
Turn-On Delay Time ctd(on)
VDD = -20 V, RL = 6.7 Ω
ID -3 A, VGEN = -10 V, Rg = 1 Ω
-710
ns
Rise Time c tr -1216
Turn-Off Delay Time c td(off) -1620
Fall Time c tf -48
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM ---10A
Forward Voltage VSD IF = -1.5 A, VGS = 0 V - -0.8 -1.2 V
VISHAY. automostecnsugpanalwshaymm www.v\shay,com/doc?91000
SQ2389ES
www.vishay.com Vishay Siliconix
S15-0166-Rev. A, 02-Feb-15 3Document Number: 63248
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
Transconductance
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
- Gate Current (A)IGSS
0
0.001
0.002
0.003
0.004
0.005
0 5 10 15 20 25
TJ=25 °C
0
4
8
12
16
20
012345
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 4 V
0
2
4
6
8
10
012345
gfs - Transconductance (S)
ID - Drain Current (A)
TC = 25 °C
TC = 125 °C
TC = -55 °C
VGS - Gate-to-Source Voltage (V)
- Gate Current (A)IGSS
10-10
10-8
10-6
10-4
10-2
10-0
0 7 14 21 28 35
TJ= 150 °C
TJ=25 °C
10-9
10-7
10-5
10-3
10-1
0
4
8
12
16
0246810
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
TC = 125 °C
TC = -55 °C
0
0.1
0.2
0.3
0.4
0.5
0481216
RDS(on) - Resistance (Ω)
ID - Drain Current (A)
VGS = 10 V
VGS = 4.5 V
VISHAY. automostecnsugpanalwshaymm www.v\shay,com/doc?91000
SQ2389ES
www.vishay.com Vishay Siliconix
S15-0166-Rev. A, 02-Feb-15 4Document Number: 63248
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0
100
200
300
400
500
600
700
0 10203040
C - Capacitance (pF)
VDS-Drain-to-Source Voltage (V)
Ciss
Coss
Crss
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25 0 25 50 75 100 125 150 175
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
ID = 3 A
VGS = 10 V
VGS = 4.5 V
0
0.1
0.2
0.3
0.4
0.5
0246810
RDS(on) - Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ = 150 °C
TJ = 25 °C
0
2
4
6
8
10
0246810
VGS -Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
ID = -3 A
VDS = -20 V
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 150 °C
TJ = 25 °C
VGS(th) Variance (V)
TJ - Temperature (°C)
-0.5
-0.2
0.1
0.4
0.7
1.0
-50 -25 0 25 50 75 100 125 150 175
ID = 250 μA
ID = 5 mA
i mu. automostechsugpanalwshaymm www.v\shay,com/doc?91000
SQ2389ES
www.vishay.com Vishay Siliconix
S15-0166-Rev. A, 02-Feb-15 5Document Number: 63248
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Drain Source Breakdown vs. Junction Temperature Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
TJ - Junction Temperature (°C)
VDS - Drain-to-Source Voltage (V)
-55
-52
-49
-46
-43
-40
- 50 - 25 0 25 50 75 100 125 150 175
ID = 1 mA
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100 ms
Limited by RDS(on)*
1 ms
IDM Limited
TC= 25 °C
Single PulseBVDSS Limited
10 ms
100 μs
1 s, 10 s,
DC
10-3 10-2 110 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 175 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
VISHAY. ww Vishaz Cum/ggg’ESZAB automostecnsugpanalwshaymm www.v\shay,com/doc?91000
SQ2389ES
www.vishay.com Vishay Siliconix
S15-0166-Rev. A, 02-Feb-15 6Document Number: 63248
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63248.
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE dezilam
r
oN
ecnade
p
mI
la
m
r
e
hT
— VISHAYm V
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
— VISHAY.. mos (2 692) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} D, Rex men Number 72609 on 2er ca
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
Return to Index
Return to Index
— VISHAY. V
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Products related to this Datasheet

MOSFET P-CH 40V 4.1A SOT23-3
MOSFET P-CH 40V 4.1A SOT23-3
MOSFET P-CH 40V 4.1A SOT23-3