SI4590DY Datasheet by Vishay Siliconix

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Si4590DY
www.vishay.com Vishay Siliconix
S14-0146-Rev. A, 27-Jan-14 1Document Number: 62937
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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N- and P-Channel 100 V (D-S) MOSFET
Ordering Information:
Si4590DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
100 % Rg and UIS tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
H bridge / DC-AC inverter
- Brushless DC motors
Notes
a. Based on TF = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W (n-channel) and 90 °C/W (p-channel).
PRODUCT SUMMARY
VDS (V) RDS(on) () MAX. ID (A) aQg (TYP.)
N-Channel 100 0.057 at VGS = 10 V 5.6 4
0.072 at VGS = 4.5 V 5
P-Channel -100 0.183 at VGS = -10 V -3.4 11.6
0.205 at VGS = -4.5 V -3.2
Top View
SO-8 Dual
1
S1
2
G1
3
S2
1
2
G
3
S
2
4
G2
D1
7
D2
6
D2
5
D1
8
N-Channel MOSFET
D1
G1
S1
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT
Drain-Source Voltage VDS 100 -100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TF = 25 °C
ID
5.6 -3.4
A
TF = 70 °C 4.5 -2.7
TA = 25 °C 4.5 b,c -2.5 b,c
TA = 70 °C 3.6 b,c -2 b,c
Pulsed Drain Current (100 μs Pulse Width) IDM 30 -20
Source-Drain Current Diode Current TF = 25 °C IS
3-3.5
TA = 25 °C 2 b,c -1.9 b,c
Pulsed Source-Drain Current (100 μs Pulse Width) ISM 30 -20
Single Pulse Avalanche Current L = 0.1 mH IAS 5-20
Single Pulse Avalanche Energy EAS 1.3 20 mJ
Maximum Power Dissipation
TF = 25 °C
PD
3.6 4.2
W
TF = 70 °C 2.3 2.7
TA = 25 °C 2.3 b,c 2.3 b,c
TA = 70 °C 1.5 b,c 1.5 b,c
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT
TYP. MAX. TYP. MAX.
Maximum Junction-to-Ambient b,d t 10 s RthJA 35 55 33 55 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 20 35 17 30
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Si4590DY
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S14-0146-Rev. A, 27-Jan-14 2Document Number: 62937
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS
VGS = 0 V, ID = 250 μA N-Ch 100 - - V
VGS = 0 V, ID = -250 μA P-Ch -100 - -
VDS Temperature Coefficient VDS/TJ
ID = 250 μA N-Ch - 70 -
mV/°C
ID = -250 μA P-Ch - -103 -
VGS(th) Temperature Coefficient VGS(th)/TJ
ID = 250 μA N-Ch - -5.7 -
ID = -250 μA P-Ch - 4.5 -
Gate Threshold Voltage VGS(th)
VDS = VGS, ID = 250 μA N-Ch 1.5 - 2.5 V
VDS = VGS, ID = -250 μA P-Ch -1.5 - -2.5
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch - - 100 nA
P-Ch - - -100
Zero Gate Voltage Drain Current IDSS
VDS = 100 V, VGS = 0 V N-Ch - - 1
μA
VDS = -100 V, VGS = 0 V P-Ch - - -1
VDS = 100 V, VGS = 0 V, TJ = 55 °C N-Ch - - 10
VDS = -100 V, VGS = 0 V, TJ = 55 °C P-Ch - - -10
On-State Drain Current bID(on) VDS = 5 V, VGS = 10 V N-Ch 10 - - A
VDS = -5 V, VGS = -10 V P-Ch -10 - -
Drain-Source On-State Resistance bRDS(on)
VGS = 10 V, ID = 2 A N-Ch - 0.047 0.057
VGS = -10 V, ID = -2 A P-Ch - 0.150 0.183
VGS = 4.5 V, ID = 1.5 A N-Ch - 0.059 0.072
VGS = -4.5 V, ID = -1 A P-Ch - 0.165 0.205
Forward Transconductance bgfs
VDS = 15 V, ID = 2 A N-Ch - 9 - S
VDS = -15 V, ID = -2 A P-Ch - 9.3 -
Dynamic a
Input Capacitance Ciss
N-Channel
VDS = 50 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = -50 V, VGS = 0 V, f = 1 MHz
N-Ch - 360 -
pF
P-Ch - 1150 -
Output Capacitance Coss
N-Ch - 130 -
P-Ch - 65 -
Reverse Transfer Capacitance Crss
N-Ch - 20 -
P-Ch - 40 -
Total Gate Charge Qg
VDS = 50 V, VGS = 10 V, ID = 4.5 A N-Ch - 7.5 11.5
nC
VDS = -50 V, VGS = -10 V, ID = -5 A P-Ch - 24 36
N-Channel
VDS = 50 V, VGS = 4.5 V, ID = 4.5 A
P-Channel
VDS = -50 V, VGS = -4.5 V, ID = -5 A
N-Ch - 4 6
P-Ch - 11.6 18
Gate-Source Charge Qgs
N-Ch - 1.2 -
P-Ch - 3.8 -
Gate-Drain Charge Qgd N-Ch - 2 -
P-Ch - 5 -
Gate Resistance Rgf = 1 MHz N-Ch 0.6 3.3 6.6
P-Ch 3 13 26
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Si4590DY
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S14-0146-Rev. A, 27-Jan-14 3Document Number: 62937
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Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic a
Turn-On Delay Time td(on)
N-Channel
VDD = 50 V, RL = 13.8
ID 3.6 A, VGEN = 10 V, Rg = 1
P-Channel
VDD = -50 V, RL = 12.5
ID -4 A, VGEN = -10 V, Rg = 1
N-Ch - 5 10
ns
P-Ch - 7 15
Rise Time tr
N-Ch - 11 20
P-Ch - 11 20
Turn-Off Delay Time td(off) N-Ch - 12 25
P-Ch - 65 130
Fall Time tf
N-Ch - 6 15
P-Ch - 20 40
Turn-On Delay Time td(on)
N-Channel
VDD = 50 V, RL = 13.8
ID 3.6 A, VGEN = 4.5 V, Rg = 1
P-Channel
VDD = -50 V, RL = 12.5
ID -4 A, VGEN = -4.5 V, Rg = 1
N-Ch - 32 65
P-Ch - 55 110
Rise Time tr
N-Ch - 73 150
P-Ch - 80 160
Turn-Off Delay Time td(off) N-Ch - 14 30
P-Ch - 42 85
Fall Time tf
N-Ch - 12 25
P-Ch - 25 50
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTF = 25 °C N-Ch - - 3
A
P-Ch - - -3.5
Pulse Diode Forward Current aISM
N-Ch - - 30
P-Ch - - -20
Body Diode Voltage VSD
IS = 3.6 A N-Ch - 0.83 1.2 V
IS = -4 A P-Ch - -0.8 -1.2
Body Diode Reverse Recovery Time trr
N-Channel
IF = 3.6 A, dI/dt = 100 A/μs, TJ = 25 °C
P-Channel
IF = -4 A, dI/dt = -100 A/μs, TJ = 25 °C
N-Ch - 30 60 ns
P-Ch - 42 85
Body Diode Reverse Recovery Charge Qrr
N-Ch - 27 55 nC
P-Ch - 93 190
Reverse Recovery Fall Time ta
N-Ch - 19 -
ns
P-Ch - 36 -
Reverse Recovery Rise Time tb
N-Ch - 11 -
P-Ch - 6 -
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
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S14-0146-Rev. A, 27-Jan-14 4Document Number: 62937
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS = 4 V
V
GS = 10 V thru 5 V
V
GS
= 3 V
0
0.03
0.06
0.09
0.12
0 4 8 12 16 20
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
VGS = 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS = 80 V
VDS = 25 V
VDS = 50 V
ID = 4.5 A
C
°
C
°
C
°
0
100
200
300
400
500
600
0 20 40 60 80 100
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
Ciss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
VGS = 4.5 V
I
D
= 2 A
VGS = 10V
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S14-0146-Rev. A, 27-Jan-14 5Document Number: 62937
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 150 °C
TJ = 25 °C
1.3
1.5
1.7
1.9
2.1
2.3
2.5
- 50 - 25 0 25 50 75 100 125 150
VGS(th) (V)
TJ - Temperature (°C)
I
D
= 250 μA
0
0.03
0.06
0.09
0.12
0.15
0 2 4 6 8 10
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ = 125 °C
TJ = 25 °C
ID = 2 A
0
5
10
15
20
25
30
0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
10 s
ID(on) Limited
IDM Limited
100 ms
Limited by RDS
(
on
)
*
1 ms
TA
= 25 °C
BVDSS Limited
10 ms
100 μs
1 s
DC
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Si4590DY
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S14-0146-Rev. A, 27-Jan-14 6Document Number: 62937
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating*
Power Derating, Junction-to-Foot
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0.0
2.0
4.0
6.0
8.0
0 25 50 75 100 125 150
ID - Drain Current (A)
TF - Foot Temperature (°C)
0
1
2
3
4
5
0 25 50 75 100 125 150
Power (W)
TF - Foot Temperature (°C)
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S14-0146-Rev. A, 27-Jan-14 7Document Number: 62937
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
t
1
P
DM
t
2
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
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S14-0146-Rev. A, 27-Jan-14 8Document Number: 62937
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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS = 4 V
V
GS
= 10 V thru 5 V
VGS = 3 V
0
0.05
0.10
0.15
0.20
0.25
0 4 8 12 16 20
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
VGS = 4.5 V
VGS = 10 V
0
2
4
6
8
10
0 5 10 15 20 25
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS = 80 V
VDS = 25 V
VDS = 50 V
ID = 5 A
0
2
4
6
8
10
0.0 1.0 2.0 3.0 4.0
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0
300
600
900
1200
1500
1800
0 20 40 60 80 100
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
Ciss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
VGS = 4.5 V
ID = 2 A
VGS = 10V
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S14-0146-Rev. A, 27-Jan-14 9Document Number: 62937
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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, (unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 150 °C
TJ = 25 °C
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
VGS(th) (V)
TJ - Temperature (°C)
I
D
= 250 μA
0
0.1
0.2
0.3
0.4
0.5
0 2 4 6 8 10
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ = 125 °C
TJ = 25 °C
ID = 2 A
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
10 s
ID(on) Limited
IDM Limited
100 ms
Limited by RDS
(
on
)
*
1 ms
TA
= 25 °C
BVDSS Limited
10 ms
100 μs
1 s
DC
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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating*
Power Derating, Junction-to-Foot
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0.0
1.0
2.0
3.0
4.0
0 25 50 75 100 125 150
ID - Drain Current (A)
TF - Foot Temperature (°C)
0
1
2
3
4
5
0 25 50 75 100 125 150
Power (W)
TF - Foot Temperature (°C)
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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambien
Normalized Thermal Transient Impedance, Junction-to-Foot
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0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90°C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
t
1
P
DM
t
2
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
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Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
VISHAY» (A 359} 0 24s (a 242) Recommended Mwmmum Pads Dwmensmns m Inches/(mm) mm ws we 22
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
Return to Index
Return to Index
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