ESD5B5.0ST1G Datasheet by ON Semiconductor

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0N Semiconductor® www.0nsemi.com O—fl—Id—O 9
© Semiconductor Components Industries, LLC, 2015
August, 2018 − Rev. 7 1Publication Order Number:
ESD5B5.0ST1/D
ESD5B5.0S, SZESD5B5.0S
ESD Protection Diode
Micro−Packaged Diodes for ESD Protection
The ESD5B Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size and bi−directional
design, it is ideal for use in cellular phones, MP3 players, and portable
applications that require audio line protection.
Specification Features
Low Capacitance 32 pF
Low Clamping Voltage
Small Body Outline Dimensions: nom 0.063 x 0.032(1.6x0.8 mm)
Low Body Height: nom 0.024 (0.6 mm)
Reverse Working (Stand−off) Voltage: 5.0 V
Peak Power up to 50 W @ 8 x 20 ms Pulse
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC61000−4−2 Level 4 ESD Protection
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
This is a Pb−Free Device
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD) Contact
Air
±30
±30 kV
ESD Voltage Per Human Body Model
Per Machine Model 16
400 kV
V
Peak Power (Figure 1) Per 8 x 20 ms Waveform
Peak Power (Figure 2)Per 10 x 1000 ms Waveform PPK 50
10 W
Total Power Dissipation on FR−5 Board (Note 1)
@ TA = 25°C
°PD°200 mW
Junction and Storage Temperature Range TJ, Tstg −55 to
+150
°C
Lead Solder Temperature − Maximum
(10 Second Duration) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
Device Package Shipping
ORDERING INFORMATION
SOD−523
CASE 502
MARKING DIAGRAM
www.onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
B5 = Specific Device Code
M Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
ESD5B5.0ST1G SOD−523
(Pb−Free) 3000 / Tape &
Reel
1
2
B5
G
12
M
G
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ESD5B5.0ST5G SOD−523
(Pb−Free) 8000 / Tape &
Reel
SZESD5B5.0ST1G SOD−523
(Pb−Free) 3000 / Tape &
Reel
SZESD5B5.0ST5G SOD−523
(Pb−Free) 8000 / Tape &
Reel
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IPP
IPP
V
I
IR
IT
IT
IR
VRWM
VCVBR VRWM VC
VBR
Bi−Directional
ESD5B5.0S, SZESD5B5.0S
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRReverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)
Device*
VRWM
(V) IR (mA)
@ VRWM
VBR (V) @ IT
(Note 2) IT
C (pF) @ VR = 0 V,
f = 1 MHz VC
Max Max Min Max mA Typ Per IEC61000−4−2 (Note 3)
ESD5B5.0ST1G/T5G,
SZESD5B5.0ST1G 5.0 1.0 5.8 7.8 1.0 32 Figures 1 and 2
See Below
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC 61000−4−2 Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC 61000−4−2
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ESD5B5.0S, SZESD5B5.0S
www.onsemi.com
3
IEC 61000−4−2 Spec.
Level Test Volt-
age (kV)
First Peak
Current
(A) Current at
30 ns (A) Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
Ipeak
90%
10%
IEC61000−4−2 Waveform
100%
I @ 30 ns
I @ 60 ns
tP = 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
Figure 4. Diagram of ESD Test Setup
50 W
50 W
Cable
Oscilloscope
ESD Gun
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
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SOD523
CASE 50201
ISSUE E
DATE 28 SEP 2010
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
XX = Specific Device Code
M Date Code
E
D
X
Y
b2X
M
0.08 X Y
A
H
c
DIM MIN NOM MAX
MILLIMETERS
D1.10 1.20 1.30
E0.70 0.80 0.90
A0.50 0.60 0.70
b0.25 0.30 0.35
c0.07 0.14 0.20
L0.30 REF
H1.50 1.60 1.70
12
XX
12
1
2
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
SCALE 4:1
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
M
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
STYLE 1 STYLE 2
STYLE 1 STYLE 2
XX
12
M
1
2
E
E
RECOMMENDED
TOP VIEW
SIDE VIEW
2X
BOTTOM VIEW
L2
L
2X
2X
0.48
0.40
2X
1.80
DIMENSION: MILLIMETERS
PACKAGE
OUTLINE
L2 0.15 0.20 0.25
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOD523
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