1, SZ1_SMB10CAT3G-LF Series Datasheet by Littelfuse Inc.

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© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/17/17
TVS Diodes
Surface Mount > 600W > 1SMB10CAT3G Series
Working Peak Reverse Voltage Range − 10 V to 75 V
Standard Zener Breakdown Voltage Range −
11.7 V to 91.7 V
Peak Power − 600 Watts @ 1 ms
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 µA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb−Free Packages are Available
Features
The 1SMB10CAT3Gv series is designed to protect voltage
sensitive components from high voltage, high energy
transients. They have excellent clamping capability, high
surge capability, low zener impedance and fast response
time. The 1SMB10CAT3G series is supplied in the
Littelfuse exclusive, cost-effective, highly reliable package
and is ideally suited for use in communication systems,
automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and
many other industrial/consumer applications.
Description
Parameter Symbol Value Unit
Peak Power Dissipation (Note 1) @ TL =
25°C, Pulse Width = 1 ms PPK 600 W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−
to−Lead
PD
R JL
3.0
40
25
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ TA =
25°C Derate Above 25°C
Thermal Resistance from Junction–to–
Ambient
PD
RθJA
0.55
4.4
226
W
mW/°C
°C/W
Operating and Storage
Temperature Range TJ, Tstg
-65 to
+150 °C
Maximum Ratings and Thermal Characteristics
1SMB10CAT3G Series
Functional Diagram
Bi-directional
Uni-directional
Cathode Anode
Pb
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are
stress ratings only. Functional operation above the Recommended Operating Conditions is
not implied. Extended exposure to stresses above the Recommended Operating Conditions
may affect device reliability.
1. 10 X 1000 µs, non−repetitive
2. 1” square copper pad, FR−4 board
3. FR−4 board, using Littelfuse minimum recommended footprint, as shown in 403A-03
case outline dimensions spec
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices
Additional Information
Samples
Resources
Datasheet
OBSOLETE/EOL
DATE June/30/2018 PCN/ECN# LFPCN41246
REPLACED BY SMBJ Series
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© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/17/17
TVS Diodes
Surface Mount > 600W > 1SMB10CAT3G Series
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
I-V Curve Characteristics (TA = 25°C unless otherwise noted)
I
PP
I
PP
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR
V
RWM
V
C
V
BR
II!—
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/17/17
TVS Diodes
Surface Mount > 600W > 1SMB10CAT3G Series
Electrical Characteristics
Device* Device
Marking
V
RWM
(Note 6)
IR @
VRWM
Breakdown Voltage VC @ IPP
(Note 8) C Typ.
(Note 9)
VBR @ IT (V) (Note 7) @ ITVCIPP
Volts µA MIN NOM MAX mA Volts Amps pF
1SMB10CAT3G KXC 10 5.0 11.1 11.69 12.27 1.0 17.0 35.3 805
1SMB11CAT3G KZC 11 5.0 12.2 12.84 13.5 1.0 18.2 33.0 740
1SMB12CAT3G LEC 12 5.0 13.3 14.00 14.7 1.0 19.9 30.2 680
1SMB13CAT3G LGC 13 5.0 14.4 15.16 15.9 1.0 21.5 27.9 630
1SMB14CAT3G LKC 14 5.0 15.6 16.42 17.2 1.0 23.2 25.8 590
1SMB15CAT3G LMC 15 5.0 16.7 17.58 18.5 1.0 24.4 24.0 555
1SMB16CAT3G LPC 16 5.0 17.8 18.74 19.7 1.0 26.0 23.1 520
1SMB17CAT3G LRC 17 5.0 18.9 19.90 20.9 1.0 27.6 21.7 490
1SMB18CAT3G LTC 18 5.0 20.0 21.06 22.1 1.0 29.2 20.5 465
1SMB20CAT3G LVC 20 5.0 22.2 23.37 24.5 1.0 32.4 18.5 425
1SMB22CAT3G LXC 22 5.0 24.4 25.69 27.0 1.0 35.5 16.9 390
1SMB24CAT3G LZC 24 5.0 26.7 28.11 29.5 1.0 38.9 15.4 366
1SMB26CAT3G MEC 26 5.0 28.9 30.42 31.9 1.0 42.1 14.2 330
1SMB28CAT3G MGC 28 5.0 31.1 32.74 34.4 1.0 45.4 13.2 310
1SMB30CAT3G MKC 30 5.0 33.3 35.06 36.8 1.0 48.4 12.4 290
1SMB33CAT3G MMC 33 5.0 36.7 38.63 40.6 1.0 53.3 11.3 265
1SMB36CAT3G MPC 36 5.0 40.0 42.11 44.2 1.0 58.1 10.3 245
1SMB40CAT3G MRC 40 5.0 44.4 46.74 49.1 1.0 64.5 9.3 220
1SMB43CAT3G MTC 43 5.0 47.8 50.32 52.8 1.0 69.4 8.6 210
1SMB45CAT3G MVC 45 5.0 50.0 52.63 55.3 1.0 72.2 8.3 200
1SMB48CAT3G MXC 48 5.0 53.3 56.11 58.9 1.0 77.4 7.7 190
1SMB51CAT3G MZC 51 5.0 56.7 59.69 62.7 1.0 82.4 7.3 175
1SMB54CAT3G NEC 54 5.0 60.0 63.16 66.32 1.0 87.1 6.9 170
1SMB58CAT3G NGC 58 5.0 64.4 67.79 71.18 1.0 93.6 6.4 155
1SMB60CAT3G NKC 60 5.0 66.7 70.21 73.72 1.0 96.8 6.2 150
1SMB64CAT3G NMC 64 5.0 71.1 74.84 78.58 1.0 103 5.8 145
1SMB75CAT3G NRC 75 5.0 83.3 91.65 92.07 1.0 121 4.9 125
4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the
DC or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25°C.
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C
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© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/17/17
TVS Diodes
Surface Mount > 600W > 1SMB10CAT3G Series
Figure 1. Pulse Rating Curve
Ratings and Characteristic Curves
Figure 2. Pulse Waveform
Figure 3. Pulse Derating Curve Figure 4. Typical Junction Capacitance vs. Bias Voltage
Typical Protection Circuit
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
t
1
10
100
0.1 s1 s1 0 s 100 s1 ms 10 ms
0.1
in
in
V / vm (TRANS‘ENT) V1 Vm {me ln = TW‘E DELAV DUE TO CAPAC‘T‘VE EFFECT vm (TRANS‘ENT) UVERSHOOT DUE T!) V \NDUCTNE EFFECTS F VL 07 as 03 u z PULSE W‘DTH 0‘ mm um ans an: um «W u: my: nvuz 05 I z 5 IU 20 511 mu DDUTVCVCLEM) Hm DERATWG FACTOR am
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/17/17
TVS Diodes
Surface Mount > 600W > 1SMB10CAT3G Series
Application Notes
Response Time
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage
as shown in Figure 5.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current
to full current) and lead inductance. This inductive effect
produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series
have a very good response time, typically < 1 ns and
negligible inductance. However, external inductive effects
could produce unacceptable overshoot. Proper circuit
layout minimum lead lengths and placing the suppressor
device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential
to prevent overstress of the protection device. This
impedance should be as high as possible, without
restricting the circuit operation.
Duty Cycle Derating
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25ºC. If the duty cycle
increases, the peak power must be reduced as indicated
by the curves of Figure 7. Average power must be derated
as the lead or ambient temperature rises above 25ºC. The
average power derating curve normally given on data
sheets may be normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor
than the 10 s pulse. However, when the derating factor for
a given pulse of Figure 7 is multiplied by the peak power
value of Figure 1 for the same pulse, the results follow the
expected trend.
Figure 6.
Figure 7. Typical Derating Factor for Duty Cycle
Figure 5.
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© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/17/17
TVS Diodes
Surface Mount > 600W > 1SMB10CAT3G Series
Dimensions
Part Marking System
Soldering Footrpint
Physical Specifications
Case Void-free, transfer-molded, thermosetting
plastic
Polarity Cathode indicated by polarity band
Mounting Position Any
Finish All external surfaces are corrosion
resistant and leads are readily solderable
Leads Modified L−Bend providing more contact
area to bond pads
ORDERING INFORMATION
Device Package Shipping
1SMBxxCAT3G SMB
(Pb−Free)
2,500 /
Tape & Reel
Flow/Wave Soldering (Solder Dipping)
Peak Temperature : 260 ºC
Dipping Time : 10 seconds
mm
inches
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
Dim
Inches Millimeters
Min Nom Max Min Nom Max
A0.075 0.087 0.090 1.90 2.20 2.28
A1 0.002 0.004 0.007 0.05 0.10 0.19
b0.077 0.080 0.087 1.96 2.03 2.20
c0.006 0.009 0.012 0.15 0.23 0.31
D0.130 0.140 0.156 3.30 3.56 3.95
E0.160 0.170 0.181 4.06 4.32 4.60
HE0.205 0.214 0.220 5.21 5.44 5.60
L0.030 0.040 0.063 0.76 1.02 1.60
L1 0.020 REF 0.51 REF
E
bD
Lc
A
A1
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
HE
D
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test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
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