SMF3.3 Datasheet by Littelfuse Inc.

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TVS Diodes
Surface Mount – 200W > SMF3.3 Series
©2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 07/28/16
RoHS
Pb
e3
Description
Features
Maximum Ratings and Thermal Characteristics
(TA=25OC unless otherwise noted)
Parameter Symbol Value Unit
Peak Pulse Power
Dissipation at
TA=25ºC (Note 1)
8/20µs
PPPM
1200 W
10/1000µs
200 W
Thermal Resistance Junction- to-
Ambient RθJA 220 °C/W
Thermal Resistance Junction- to- Lead RθJL 100 °C/W
Operating Temperature Range TJ-55 to 150 °C
Storage Temperature Range TSTG -55 to 150 °C
Notes:
1. Non-repetitive current pulse, per Fig. 4 & 6 and derated above TJ (initial) =25ºC per Fig. 3.
SMF3.3 is designed specifically to protect sensitive
electronic equipment from voltage transients induced by
lightning and other transient voltage events.
Applications
SMF3.3 devices are ideal for the protection of portable
devices/hard drives, notebooks, VCC busses, POS terminal,
SSDs, power supplies, monitors, and vulnerable circuit
used in other consumer applications.
200W peak pulse power
capability at 10/1000µs
waveform, repetition rate
(duty cycle): 0.01%
1200W peak pulse power
capability at 8/20us
waveform
• Excellent clamping
capability
Compatible with industrial
standard package SOD-
123FL
Low profile: maximum
height of 1.08mm.
For surface mounted
applications to optimize
board space
Typical failure mode is
short from over-specified
voltage or current
Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
ESD protection of data
lines in accordance with
IEC 61000-4-2
EFT protection of data
lines in accordance with
IEC 61000-4-4
Fast response time:
typically less than 1.0ns
from 0 Volts to VBR min
High temperature
soldering: 260°C/40
seconds at terminals
• Built-in strain relief
Meet MSL level1, per
J-STD-020C, LF maximun
peak of 260°C
Matte tin lead–free plated
• Halogen-free and RoHS
compliant
• Pb-free E3 means 2nd level
interconnect is Pb-free
and the terminal finish
material is tin(Sn) (IPC/
JEDEC J-STD-609A.01)
SMF3.3
Functional Diagram
Bi-directional
Uni-directional
Cathode Anode
Electrical Characteristics (TA=25°C unless otherwise noted)
Part
Number
Marking
Code
Breakdown
Voltage VBR
(Volts) @ IT
Test
Current
IT
(mA)
Reverse
Stand off
Voltage VR
(V)
Maximum
Reverse
Leakage @ VR
IR (µA)
Maximum
Peak Pulse
Current
(10/1000μS)
Ipp (A)
Maximum
Clamping
Voltage @Ipp
(10/1000μS)
VC (V)
Maximum
Peak Pulse
Current
(8/20μS)
Ipp (A)
Maximum
Clamping
Voltage @Ipp
(8/20μS)
VC (V)
MIN MAX
SMF3.3 33 3.4 4.3 10 3.3 0.5 30.0 6.8 120.0 10.0
Notes:
1. VBR measured after IT applied for 300µs, IT = sequare wave pulse or equivalent.
2. Surge current waveform per 10/1000µs exponential wave and derated per Fig.2.
3. All terms and symbols are consistent with ANSI/IEEE C62.35.
4. Surge current waveform per 8/20µs exponential wave and derated per Fig.6.
AGENCY AGENCY FILE NUMBER
E230531
Agency Approvals
Uni-directional
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TVS Diodes
Revised: 07/28/16
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diodes
Surface Mount – 200W > SMF3.3 Series
Figure 3 - Peak Pulse Power Derating Curve
IPPM- Peak Pulse Current, % IRSM
0
0
50
100
150
1.0 2.0 3.0 4.0
tr=10µsec
Peak Value
IPPM
IPPM
2
TJ=25°C
Pulse Width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10/1000µsec. Waveform
as defined by R.E.A
td
t-Time (ms)
Half Value
IPPM ( )
Figure 4 - 10/1000µS Pulse Waveform
0
20
40
60
80
100
0255075100 125 175
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage %
150
TJ - Initial Junction Temperature (ºC)
Ratings and Characteristic Curves (TA=25°C unless otherwise noted)
Voltage Transients
Time
Voltage Across TVS
Current Through TVS
Voltage or Current
Figure 1 - TVS Transients Clamping Waveform
0.1
1
10
0.001 0.01 0.
11
td-Pulse Width (ms)
PPPM-Peak Pulse Power (kW)
TJ initial = Tamb
Figure 2 - Peak Pulse Power Rating Curve
I-V Curve Characteristics
PPPM Peak Pulse Power Dissipation -- Max power dissipation
VR Stand-off Voltage -- Maximum voltage that can be applied to the
TVS without operation
VBR Breakdown Voltage -- Maximum voltage that flows though the
TVS at a specified test current (IT)
VC Clamping Voltage -- Peak voltage measured across the TVS at a
specified Ippm (peak impulse current)
IR Reverse Leakage Current -- Current measured at VR
VF Forward Voltage Drop for Uni-directional
note: VF distribution range from 10V to 15V
Vc V
BR
V
R
I
R
I
T
I
pp
V
Uni-directional
V
F
% Litteltuse” mmmmm ”my; behaved
TVS Diodes
Surface Mount – 200W > SMF3.3 Series
©2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 07/28/16
Physical Specifications
Case SOD-123FL plastic over passivated
junction
Polarity Color band denotes cathode except bipolar
Terminal Matte tin-plated leads, solderable per
JESD22-B102
Soldering Parameters
Temperature (T)
Time (t)
Ts(min)
Ts(max)
TL
TP
ts
Preheat
tL
tp
Ramp-up Critical Zone
TL to TP
Ramp-down
t 25˚C to Peak
25˚C
Reflow Condition Lead–free assembly
Pre Heat
- Temperature Min (Ts(min)) 150°C
- Temperature Max (Ts(max)) 200°C
- Time (min to max) (ts) 60 – 180 secs
Average ramp up rate (Liquidus Temp (TA)
to peak 3°C/second max
TS(max) to TA - Ramp-up Rate 3°C/second max
Reflow - Temperature (TA) (Liquidus) 217°C
- Time (min to max) (ts) 60 – 150 seconds
Peak Temperature (TP) 260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)20 – 40 seconds
Ramp-down Rate 6°C/second max
Time 25°C to peak Temperature (TP) 8 minutes Max.
Do not exceed 260°C
High Reliability Test Specification
Pre-condition
(HTRB/ TC/ PCT/
H3TRB)
(1) Bake 24hrs @150°C
(2)168hrs @85% RH and 85°C
(3) IR reflow,3 reflows, peak temperature of
260°C
HTRB JESD 22-108C
VCC bias= 80%VDRM & TA=150°C, 1008hrs
Temperature Cycling MIL-STD-883F, Method 1010.8 Condition C
-65°C to150°C, 1000 cycles
Pressure Cooker JEDEC 22-A102C
100%RH @121°C @15psi, 96hrs
Bias Humidity
(H3TRB)
JESD 22-A101B
Vcc bias (pin1to pin3)=VDRM ,85%RH, 85°C ,
1008 hours
RSH JESD 22-A111
260°C ,10 secs.
0
20
40
60
80
100
120
00.3 0.60.9 1.21.5 1.82.1 2.42.7 33.3
Capacitance (pF)
Bias Voltage (V)
Figure 5 - Capacitance vs. Reverse Bias
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.05.0 10.015.020.025.030.0
Time (μs)
Percent of I
PP
Figure 6 - 8/20μS Pulse Waveform
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TVS Diodes
Revised: 07/28/16
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diodes
Surface Mount – 200W > SMF3.3 Series
Part Numbering System
VR
VOLTAGE
SMF 3.3
SERIES
Part Marking System
Dimensions - SOD-123FL Package
A
B
C
D
E
E
F
H
G
1.6 (0.062) 1.3 (0.051)
1.4 (0.055)
Mounting Pad Layout
Cathode
Tape and Reel Specification
0.31
(8.0)
0.157
(4.0)
0.157
(4.0)
0.33
(8.5)
0.80 (20.2)
Arbor Hole Dia.
Optional
7” 7.0 (178)
Dimensions are in inches
(and millimeters).
Direction of Feed
0.059 DIA
(1.5) Cover tape
Packaging Options
Part number Component
Package Quantity Packaging Option Packaging
Specification
SMF3.3 SOD-123FL 3000 Tape & Reel – 8mm tape/7” reel EIA RS-481
Dimensions
Millimeters Inches
Min Max Min Max
A 2.90 3.10 0.114 0.122
B 3.50 3.90 0.138 0.154
C 0.85 1.05 0.033 0.041
D 1.70 2.00 0.067 0.079
E 0.43 0.83 0.017 0.033
F 0.10 0.25 0.004 0.010
G 0.00 0.10 0.000 0.004
H 0.90 1.08 0.035 0.043

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