BSZ013NE2LS5I Datasheet by Infineon Technologies

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(in/frineon
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
(iflreon Table 1 Key Performance Parameters
2
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
Rev.2.0,2015-08-17Final Data Sheet
(enlarged source interconnection)
TSDSON-8FL
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
1Description
Features
•Optimizedforhighperformancebuckconverters
•MonolithicintegratedSchottky-likediode
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 25 V
RDS(on),max 1.3 m
ID40 A
QOSS 29 nC
QG(0V..4.5V) 17 nC
Type/OrderingCode Package Marking RelatedLinks
BSZ013NE2LS5I PG-TSDSON-8 FL 13NE25I -
1) J-STD20 and JESD22
(ifileon
3
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
Rev.2.0,2015-08-17Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
(ifileon Table 2 Maximum ratings Table 3 Thermal characteristics
4
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
Rev.2.0,2015-08-17Final Data Sheet
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID
-
-
-
-
-
-
-
-
-
-
40
40
40
40
32
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=60K/W1)
Pulsed drain current2) ID,pulse - - 160 A TC=25°C
Avalanche current, single pulse3) IAS - - 20 A TC=25°C
Avalanche energy, single pulse EAS - - 90 mJ ID=20A,RGS=25
Gate source voltage VGS -16 - 16 V -
Power dissipation Ptot -
-
-
-
69
2.1 WTC=25°C
TA=25°C,RthJA=60K/W1)
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;
DIN IEC 68-1: 55/150/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 1.8 K/W -
Device on PCB,
6 cm2 cooling area1) RthJA - - 60 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
infineon Table 4 Static characteristics Table 5 Dynamic characteristics
5
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
Rev.2.0,2015-08-17Final Data Sheet
4Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 25 - - V VGS=0V,ID=10mA
Breakdown voltage temperature
coefficient dV(BR)DSS/dTj- 15 - mV/K ID=10mA,referencedto25°C
Gate threshold voltage VGS(th) 1.2 - 2.0 V VDS=VGS,ID=250µA
Zero gate voltage drain current IDSS -
-
-
0.9
0.5
-mA VDS=20V,VGS=0V,Tj=25°C
VDS=20V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
1.3
1.1
1.7
1.3 mVGS=4.5V,ID=20A
VGS=10V,ID=20A
Gate resistance RG- 0.7 1.2 -
Transconductance gfs 75 150 - S |VDS|>2|ID|RDS(on)max,ID=20A
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance1) Ciss - 2500 3400 pF VGS=0V,VDS=12V,f=1MHz
Output capacitance1) Coss - 1200 1600 pF VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance Crss - 92 - pF VGS=0V,VDS=12V,f=1MHz
Turn-on delay time td(on) - 5 - ns VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6
Rise time tr- 4 - ns VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6
Turn-off delay time td(off) - 26 - ns VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6
Fall time tf- 3 - ns VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6
1) Defined by design. Not subject to production test
(imeon Table 6 Gate char e characteristics ’ Table 7 Reverse diode
6
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
Rev.2.0,2015-08-17Final Data Sheet
Table6Gatechargecharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 5.8 - nC VDD=12V,ID=30A,VGS=0to4.5V
Gate charge at threshold Qg(th) - 4.0 - nC VDD=12V,ID=30A,VGS=0to4.5V
Gate to drain charge Qgd - 3.6 - nC VDD=12V,ID=30A,VGS=0to4.5V
Switching charge Qsw - 5.5 - nC VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total Qg- 17 23 nC VDD=12V,ID=30A,VGS=0to4.5V
Gate plateau voltage Vplateau - 2.3 - V VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total2) Qg- 37 50 nC VDD=12V,ID=30A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 16 - nC VDS=0.1V,VGS=0to4.5V
Output charge2) Qoss - 29 39 nC VDD=12V,VGS=0V
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - 40 A TC=25°C
Diode pulse current IS,pulse - - 160 A TC=25°C
Diode forward voltage VSD - 0.5 0.65 V VGS=0V,IF=11A,Tj=25°C
Reverse recovery charge Qrr - 20 - nC VR=15V,IF=11A,diF/dt=400A/µs
1) See Gate charge waveforms for parameter definition
2) Defined by design. Not subject to production test
(imeon
7
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
Rev.2.0,2015-08-17Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 40 80 120 160
0
10
20
30
40
50
60
70
80
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 40 80 120 160
0
10
20
30
40
50
ID=f(TC);VGS10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
(ifleon
8
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
Rev.2.0,2015-08-17Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0123
0
100
200
300
400 3.5 V
4 V
4.5 V
5 V
10 V
3.2 V
3 V
2.8 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[m]
0 10 20 30 40 50
0.0
0.5
1.0
1.5
2.0
3.2 V
3.5 V
4 V
4.5 V
5 V
7 V 8 V 10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
012345
0
50
100
150
200
250
300
150 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 40 80 120 160
0
80
160
240
320
400
gfs=f(ID);Tj=25°C
(imeon
9
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
Rev.2.0,2015-08-17Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[m]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
typ
RDS(on)=f(Tj);ID=20A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
10 mA
VGS(th)=f(Tj);VGS=VDS;ID=10mA
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 5 10 15 20 25
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.4 0.8 1.2
10-1
100
101
102
103
-55 °C
25 °C
125 °C
150 °C
IF=f(VSD);parameter:Tj
infineon V9 srm Gum a“...
10
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
Rev.2.0,2015-08-17Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
100101102103
100
101
102
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 10 20 30 40
0
2
4
6
8
10
12
20 V
12 V
5 V
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Typ.drain-sourceleakagecurrent
Vsd[V]
IDSS[A]
0 5 10 15 20
10-6
10-5
10-4
10-3
125 °C
100 °C
75 °C
25 °C
IDSS=f(VDS);VGS=0V;parameter:Tj
Gate charge waveforms
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11
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
Rev.2.0,2015-08-17Final Data Sheet
6PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
(ifileon
12
OptiMOSTM5Power-MOSFET,25V
BSZ013NE2LS5I
Rev.2.0,2015-08-17Final Data Sheet
RevisionHistory
BSZ013NE2LS5I
Revision:2015-08-17,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2015-08-17 Release of final version
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