T2N7002BK Datasheet by Toshiba Semiconductor and Storage

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TOSHIBA T2N7002BK MOSFETs Silicon N-Channel MOS T2N7OOZBK 1. Applications High'Specd Switching 2. Features (1) ESD(HBM) level 2 k\' (2) Low dram'source on-remiame 3 Rummy) : 1.05 a (131).) (@V RnsmN) : 1 1512(typ.) (@v Rl>s(tm):1.2 Q ((pr (@ 3. Packaging and Internal Circuit 3 3 Ti 1 s i A? 4%} 2 5:"; 2 3 Drain —i U U 1 2 1 SOT23 Stan of commercial production 2015-05 @2015 Toshiba Corporation 1 2015-08-25 Rev.1.0
TOSHIBA T2N7OOZBK 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 “0) characteristics Symboi Rating Unit Drain-source voltage V055 60 V Gate-source uoltage VSSS 720 Brain current (DC) (Note t) In 400 mA Drain current (pulsed) (Note i). (Nate 2) lop 120a Powerdissipation (Note 3) PD 320 mW Fowerdissipation (Note A) 1000 Channel temperature To. iso “0 Storage temperature Tog 755 to 150 Note Using continuously under heavy loads (eg the application or high temperature/current/voltage and the significant change in temperature etc.) may cause this product to decrease in the reliability signiiicantiy even lithe operating conditions (Le. operating temperature/currenUvoitage. etc.) are Within the absoiute maximum ratings Please design the appropriate reliability upon reviewmg the Toshiba Semiconductor Reliability Handbook (“Handling Frecautlons"/“Deratirig Concept and Methods") and Individual reiiabliity data (i e reliability test report and estimated failure rate. etc) Note 1 Ensure that the channei temperature does not exceed 150 “C. Note 2 Repetitive rating. pulse Width limited by maximum channel temperature pulse width < it)="" us,="" duly=""><1 %="" note="" 3="" device="" mounted="" on="" a="" 25="" 4="" mm="" x="" 25="" 4="" mm="" x16="" mm="" fr—4="" glass="" epoxy="" board="" (cu="" pad="" 0="" 42="" mm2="" x="" 3)="" note="" 4="" device="" mounted="" on="" a="" 25.4="" mm="">< 25.4="" mm="" x="" 1.6="" mm="" fra="" glass="" epoxy="" board="" (cu="" pad="" 645="" mm)="" note="" this="" transistor="" is="" sensitive="" to="" electrostatic="" discharge="" and="" should="" he="" handled="" wrth="" care.="" note="" the="" mosfets="" in="" this="" device="" are="" sensitive="" to="" electrostatic="" discharge.="" when="" handling="" this="" device.="" theworktabies.="" operators.="" soldering="" irons="" and="" other="" ooiects="" should="" be="" protected="" against="" anti—static="" discharge="" note="" the="" channel-to-arribient="" thermal="" resistance.="" rrh(eh.at.="" and="" the="" drain="" power="" dissipation="" pd.="" vary="" according="" to="" the="" board="" material,="" board="" area.="" board="" thickness="" and="" pad="" area="" when="" using="" this="" device,="" he="" sure="" to="" lake="" heat="" dissipatiun="" iully="" into="" account="" @2015="" toshiba="" corporation="" 2="" 2015-08-25="" rev.="" 1="" .0="">
TOSHIBA T2N7002BK 5. Electrical Characteristics 5.1. Static Characteristics (Unless othenuise specified. Ta = 25 °C) Charactenstlcs Symbol Test Condltlon Mm Typ Max Unlt Gale leakage current less vGS : ~11; v. VDs : n v 7 7 +11) M Drain 5141-011 current loss v05 = so v. v65 = o v 7 7 1 Drain-source breakdown voltage VIamass lD = 250 VA, VGS = o v so 7 v Gale threshold voltage Vm lD : 250 “A. VDs : v65 1 1 7 2.1 Dralnrsauroe omresrs1ance (Note 1) RDS‘OM lD =1oo "1&sz =10 v 7 1.05 1.5 n lD:tOUmA,VGs:50V 7 115 155 lu:1oo mA.sz:4.5v 7 1.2 175 Forward transteradmlltance (Note 1) ‘Yls‘ Vus =10 v.1U = 20o mA 7 1.0 5 Note 1 Pulse measurement 5.2. Dynamic Characteristics (Unless otherwise specified, T2. = 25 °C) Characterislics Symbol Test Conditlon Min Typ Max Unit Input capacllahce c.n VDS =10 v, V“ = o v. 7 26 40 pF Reverse 1rzhslel capacltance C,“ ': 1 MH‘ 7 1 3 Output capacltance Ca“ 7 5.5 slmlchlhg time (rlse tlme) 1, VDD = 3n V. ID = 200 mA 7 3.6 hs Swl|chlhg tlme (tum-oh delay time) 1W. gify:<"1:2“‘z:’l|ffi:fl:1 7="" 5.5="" 11="" swllchlhg="" tlme="" hall="" ma)="" (1="" common="" sauree.="" see="" chapter="" 5="" 3="" 7="" ‘7="" swuchlhg="" time="" (turn-oft="" delay="" tlme)="" two="" 7="" as="" 90="" 5.3.="" switching="" time="" test="" circuit="" .="" .="" 90="" n/="" 10="" v="" our="" °="" in="" .="" .10="" %="" o="" a?="" 0="" v="" .._l="" _="" 10="" as="" v="" ..__="" no="" 90%.="" .="" t.—="" vdd="" .="" ..="" 10="" 0/:="" .="" .="" .="" vdslonl="" tr="" |1="" lawn)="" lute")="" fig.="" 5.3.1="" switching="" time="" test="" circuit="" fig.="" 5.3.2="" input="" wavefomi/output="" waveform="" 5.4.="" gate="" charge="" characteristics="" (unless="" othemise="" specified,="" ta="25" “0)="" characterlsllcs="" symbol="" test="" condltlon="" mm="" typ="" max="" unlt="" total="" gate="" charge="" (gatersource="" plus="" gateeuraln)="" 09="" v55="" :="" :10="" v.="" v55="" :="" a="" 5="" v.="" 7="" u="" 39="" l)="" 6="" he="" gatersource="" charge="" 119.="" ‘d="2““" "‘a="" 7="" 0.2="" gate-drain="" charge="" 0w="" 7="" 011="" @2015="" toshiba="" corporation="" 3="" 2015-08-25="" rev.1.0="">
TOSHIBA T2N7OOZBK 5.5. Source-Drain Characteristics (Unless othemise specified, Ta = 25 °C) Characteristics Symboi Test Condition Min Typ Max Unit Diode Varward voiizge (Nole1) Vusr i0 = 415 mA, vcs = o v 7 -o.79 -1 1 v Note 1 Pulse measurement 6. Marking 3 2 @2015 Toshiba Corporation 4 2015-08-25 Rev.1.0
TOSHIBA 7. Characteristics Curves (Note) ‘ 2 ‘ n 0mm mum m V 1.:25‘6 3 na 9 E u 2 M E a M n u m 20 30 m Drain-souroevoxmge VDS (v; Fig. 7.1 In-VDs cummm r..2s~c § mm. a fig a 2 g g = 2 fix a: E n o 02 a. as on m n Draincurvenl ID (A! Fig.7.: RDS(ON)-ID 25 commune N‘s“... g 20 § // $9 ‘5 E g worm/15v 8 g .D.muwvcs.mv - m ‘ 3 a w e Ex g mam/5w fi .5 as n ,9, n in m 150 Amblenuemperahue Ta VG) Flg. 7.5 R950“) - T. ("W Drain curvem Dram-mums an-rasuslama RDStON) (m {V} Gale thresho‘d voltage vm rsn T2N7OOZBK Ccmman mums vns = 5 V was ml m 2n an An Gate-saurcevollage v65 (V) Fig. 7.2 In - Ves u: = mo mA Gammon 5:7qu m. as! 2 o 5 a 10 Gaxe-souvoevonage Ves (V) Fig. 7.4 RDS(oN)-VGS Con-mun 50mm vDs . ves m = n 25 m a fin mo ‘50 Ammenuempemure Ta (”0) Fig. 7.5 vm — 'r. @2015 Toshiba Corporation 2015-08-25 Rev. 1 .0
TOSHIBA T2N7OOZBK mo if e m o a) 2 E 3 t m o Emnmonsoume rum tz’iMHz v =ov m (35 at 1 m m Drainrsouroevoitage Vns w) Fig.7.7 C-Vns m Commonwurze A Iron a 5725 c m w > .1, s 3.3 S 4 g VDD=3ov a E 2 1n 0 0 oz m as on Tolalgalecharge cg (n0) Fig. 7.9 Dynamic Input Characteristics mun gedance mo E (. m. m E «1 E a: 5 E E s ,_ stugmm Mounted on rm board a Isnmmxzsnmmx ‘ www.cuvm “mum n zsnmmqsnmm i smcwm 645/”! 0M1 am at i «0 mo mun Pulsewldlh 'w (s) Fig. 7.11 rm-tw (mA) ‘nR Dram reverse currenl (n5) Switching lime t (A) In Dram current 4““ Common some: sz = a v Puke teal a r2. = 15D ”a mu fl 1m»: 2m mo 725‘: n2 m 706 as m 42 Drainrsourcevoitage Vns (V) Fig. 7-5 InR - Vns 0mm more. R5 = 5m: 1 w mu moo Dramcurreni ID (mA) Fig. 7.10 l-ID "us area muss by Roman; o 1 no upemmn I=mn§' 'quie pulse Ya :25 '0 curves mun he denied warm". Wrasse m wmwramm mm on rm mm i15Ammx15‘mmvi5mm Cu m Nimm’v not a mu VDss "lax m t m ma Drain-sourcevoitsge Vns M Fig. 7.12 Safe Operating Area Mole The above characteristics curves are presenied ior reference oniy and not guaranteed by production lest. uniess otherwlse Hated. @2015 Toshiba Corporation 2015-08-25 Rev. 1 .0
TOSHIBA T2N7002BK Package Dimensions um mm KL! E1 0.11035 H q N 9 e , , n a w \ N M ‘ 1 ‘ 2+ ' +0.! 0.4 “"5 <9 ,1o®fl="" e="" a="" e="" 9="" m.="" 3="" a="" o="" wewgm="" 01312590341)="" package="" name(s)="" toshiba="" 2-3ab1a="" chkname="" sotzs="" @2015="" toshiba="" corporation="" 7="" 2015-08-25="" rev.1.0="">
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