STF(W)42N60M2-EP Datasheet by STMicroelectronics

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January 2015 DocID027376 Rev 1 1/16
STF42N60M2-EP,
STFW42N60M2-EP
N-channel 600 V, 0.076 typ., 34 A MDmesh™ M2 EP
Power MOSFETs in TO-220FP and TO-3PF packages
Datasheet
production data
Figure 1. Internal schematic diagram
Features
Extremely low gate charge
Excellent output capacitance (C
OSS
) profile
Very low turn-off switching losses
100% avalanche tested
Zener-protected
Applications
Switching applications
Tailored for very high frequency converters
(f > 150 kHz)
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and improved vertical structure, the
devices exhibit low on-resistance and optimized
switching characteristics with very low turn-off
switching losses, rendering them suitable for the
most demanding very high frequency converters.
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AM01476v1
TO-220FP TO-3PF
123
Order codes V
DS
@
T
Jmax
R
DS(on)
max I
D
STF42N60M2-EP 650 V 0.087 34 A
STFW42N60M2-EP
Table 1. Device summary
Order codes Marking Package Packaging
STF42N60M2-EP 42N60M2EP TO-220FP Tube
STFW42N60M2-EP TO-3PF
www.st.com
Contents STF42N60M2-EP, STFW42N60M2-EP
2/16 DocID027376 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 TO-220FP, STF42N60M2-EP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 TO-3PF, STFW42N60M2-EP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID027376 Rev 1 3/16
STF42N60M2-EP, STFW42N60M2-EP Electrical ratings
16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
TO-220FP TO-3PF
V
GS
Gate-source voltage ± 25 V
I
D(1)
1. Limited by maximum junction temperature
Drain current (continuous) at T
C
= 25 °C 34 A
I
D (1)
Drain current (continuous) at T
C
= 100 °C 22 A
I
DM (1),(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 136 A
P
TOT
Total dissipation at T
C
= 25 °C 40 63 W
dv/dt
(3)
3. I
SD
34 A, di/dt 400 A/µs; V
DS
peak
< V
(BR)DSS
, V
DD
=400 V.
Peak diode recovery voltage slope 15 V/ns
dv/dt
(4)
4. V
DS
480 V
MOSFET dv/dt ruggedness 50 V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; T
C
=25 °C) 2500 3500 V
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
TO-220FP TO-3PF
R
thj-case
Thermal resistance junction-case max 3.13 2.00 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 50 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T
jmax
)6A
E
AS
Single pulse avalanche energy (starting
T
j
=2C,I
D
=I
AR
;V
DD
=50V) 800 mJ
Electrical characteristics STF42N60M2-EP, STFW42N60M2-EP
4/16 DocID027376 Rev 1
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage V
GS
=0V, I
D
=1mA 600 V
I
DSS
Zero gate voltage
drain current
V
GS
=0V, V
DS
=600V 1 µA
V
GS
=0V, V
DS
=600V,
T
C
=12C 100 µA
I
GSS
Gate-body leakage
current V
DS
=0V, V
GS
= ± 25 V ±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source
on-resistance V
GS
= 10 V, I
D
= 17 A 0.076 0.087
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
GS
= 0, V
DS
= 100 V,
f = 1 MHz
- 2370 - pF
C
oss
Output capacitance - 112 - pF
C
rss
Reverse transfer
capacitance -2.5-pF
C
oss eq.(1)
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance V
GS
= 0, V
DS
= 0 to 480 V - 454 - pF
R
G
Intrinsic gate
resistance f = 1 MHz, I
D
= 0 - 4.5 - Ω
Q
g
Total gate charge V
DD
= 480 V, I
D
= 34 A,
V
GS
= 10 V
(see Figure 18)
-55-nC
Q
gs
Gate-source charge - 8.5 - nC
Q
gd
Gate-drain charge - 25 - nC
Table 7. Switching Energy
Symbol Parameter Test conditions Min. Typ. Max. Unit
R
(off)
Turn-off energy
(from 90% V
GS
to 0% I
D
)
V
DD
=400V, I
D
= 2.5 A,
R
G
=4.7Ω, V
GS
=10V -13-µJ
V
DD
=400V, I
D
= 5 A,
R
G
=4.7Ω, V
GS
=10V -14.5J
DocID027376 Rev 1 5/16
STF42N60M2-EP, STFW42N60M2-EP Electrical characteristics
16
Table 8. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
=300V, I
D
=17A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 17 and
Figure 22)
- 16.5 - ns
t
r
Rise time - 9.5 - ns
t
d(off)
Turn-off-delay time - 96.5 - ns
t
f
Fall time - 8 - ns
Table 9. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 34 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 136 A
V
SD
(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 34 A, V
GS
= 0 - 1.6 V
t
rr
Reverse recovery time I
SD
= 34 A, di/dt = 100 A/µs
V
DD
= 60 V (see Figure 22)
- 438 ns
Q
rr
Reverse recovery charge - 9 µC
I
RRM
Reverse recovery current - 41.5 A
t
rr
Reverse recovery time I
SD
= 34 A, di/dt = 100 A/µs
V
DD
= 60 V, T
j
= 150 °C
(see Figure 22)
- 538 ns
Q
rr
Reverse recovery charge - 12 µC
I
RRM
Reverse recovery current - 44.5 A
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Electrical characteristics STF42N60M2-EP, STFW42N60M2-EP
6/16 DocID027376 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP
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DocID027376 Rev 1 7/16
STF42N60M2-EP, STFW42N60M2-EP Electrical characteristics
16
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
Figure 10. Turn-off switching loss vs drain
current Figure 11. Capacitance variations
Figure 12. Output capacitance stored energy Figure 13. Normalized gate threshold voltage vs
temperature
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Electrical characteristics STF42N60M2-EP, STFW42N60M2-EP
8/16 DocID027376 Rev 1
Figure 14. Normalized on-resistance vs
temperature Figure 15. Normalized V
(BR)DSS
vs temperature
Figure 16. Source-drain diode forward vs
temperature
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DocID027376 Rev 1 9/16
STF42N60M2-EP, STFW42N60M2-EP Test circuits
16
3 Test circuits
Figure 17. Switching times test circuit for
resistive load Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times Figure 20. Unclamped inductive load test circuit
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
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Package mechanical data STF42N60M2-EP, STFW42N60M2-EP
10/16 DocID027376 Rev 1
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
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DocID027376 Rev 1 11/16
STF42N60M2-EP, STFW42N60M2-EP Package mechanical data
16
4.1 TO-220FP, STF42N60M2-EP
Figure 23. TO-220FP drawing
Package mechanical data STF42N60M2-EP, STFW42N60M2-EP
12/16 DocID027376 Rev 1
Table 10. TO-220FP mechanical data
Dim. mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D2.5 2.75
E 0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
L3
DocID027376 Rev 1 13/16
STF42N60M2-EP, STFW42N60M2-EP Package mechanical data
16
4.2 TO-3PF, STFW42N60M2-EP
Figure 24. TO-3PF drawing
Package mechanical data STF42N60M2-EP, STFW42N60M2-EP
14/16 DocID027376 Rev 1
Table 11. TO-3PF mechanical data
Dim. mm
Min. Typ. Max.
A5.30 5.70
C2.80 3.20
D3.10 3.50
D1 1.80 2.20
E0.80 1.10
F0.65 0.95
F2 1.80 2.20
G10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15
N1.80 2.20
R3.80 4.20
Dia 3.40 3.80
DocID027376 Rev 1 15/16
STF42N60M2-EP, STFW42N60M2-EP Revision history
16
5 Revision history
Table 12. Document revision history
Date Revision Changes
21-Jan-2015 1 First release.
STF42N60M2-EP, STFW42N60M2-EP
16/16 DocID027376 Rev 1
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