DMP26M7UFG Datasheet by Diodes Incorporated

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new". Gmn DMP26M7UFG "9 TIT VVWW 542 VVWW S47
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
1 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DMP26M7UFG
ADVANCE INFO R MA T I O N
ADVANCE INFO R MA T I O N
NEW PRODUCT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
V(BR)DSS
RDS(ON) Max
-20V
6.7m@ VGS = -4.5V
9.0mΩ @ VGS = -2.5V
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Features
Low RDS(ON) ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
ESD HBM Protected up to 1KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP26M7UFG-7
POWERDI3333-8
2000/Tape & Reel
DMP26M7UFG-13
POWERDI3333-8
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Bottom View
Equivalent Circuit
SSSG
DDDD
Pin 1
Top View
S42 or S47= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
POWERDI3333-8
S42
YYWW
D
S
G
S47
YYWW
moms DMP26M7UFG
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
2 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DMP26M7UFG
ADVANC E INF O R M A TIO N
ADVANC E INF O R MA TI O N
NE W PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±10
V
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
TC = +25°C
ID
-18.0
-14.5
-40
A
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
IDM
-80
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
-2.2
A
Avalanche Current (Note 7) L=0.1mH
IAS
-23
A
Avalanche Energy (Note 7) L=0.1mH
EAS
28
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
TA = +25°C
PD
2.3
W
TC = +25°C
41
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
56
°C/W
(Note 6)
124
Thermal Resistance, Junction to Case
RθJC
6.8
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -16V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = 8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
-0.4
-1.0
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
4.2
6.7
m
VGS = -4.5V, ID = -15A
5.4
9.0
VGS = -2.5V, ID = -10A
7
VGS = -1.8V, ID = -1A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -10A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
5940
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
835
Reverse Transfer Capacitance
Crss
728
Gate Resistance
RG
3.0
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Qg
75
nC
VDD = -10V, ID = -20A
Total Gate Charge (VGS = -10V)
Qg
156
Gate-Source Charge
Qgs
8.8
Gate-Drain Charge
Qgd
22
Turn-On Delay Time
tD(ON)
10.7
ns
VGS = -4.5V, VDD = -10V,
RG = 1, ID = -10A
Turn-On Rise Time
tR
23
Turn-Off Delay Time
tD(OFF)
121
Turn-Off Fall Time
tF
109
Reverse Recovery Time
tRR
60
ns
IF = -10A, di/dt = 100As
Reverse Recovery Charge
QRR
47
nC
IF = -10A, di/dt = 100As
Notes: 5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RθJC is guaranteed by design
while RθJA is determined by the user’s board design.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7 .UIS in production with L =0.1mH, TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP26M7UFG T
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
3 of 6
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April 2015
© Diodes Incorporated
DMP26M7UFG
ADVANC E INF O R MA TI O N
ADVANC E INF O R MA TI O N
NE W PRODUCT
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS=-1.2V
VGS=-1.5V
VGS=-1.8V
VGS=-2.0V
VGS=-2.5V
VGS=-10V
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS=-5.0V
TA=-55
TA=25
TA=85
TA=150
TA=125
0
0.005
0.01
0.015
0.02
0.025
0.03
12345678910
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
()
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID=-15A
ID=-10A
0
0.002
0.004
0.006
0.008
0.01
0.012
1 6 11 16 21 26 31
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
()
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
VGS=-1.8V
VGS=-2.5V
VGS=-4.5V
0
0.5
1
1.5
2
-50 -25 025 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
VGS=-4.5V, ID=-15.0A
VGS=-2.5V, ID=-10.0A
0
0.002
0.004
0.006
0.008
0.01
0 5 10 15 20 25 30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
VGS=-4.5V
TA=-55
TA=25
TA=85
TA=150
TA=125
DMP26M7UFG \\ \\ II II I ///V //)T
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
4 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DMP26M7UFG
ADVANC E INF O R MA TI O N
ADVANC E INF O R MA TI O N
NE W PRODUCT
0
0.003
0.006
0.009
0.012
0.015
-50 -25 025 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
()
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Temperature
VGS=-4.5V, ID=-15.0A
VGS=-2.5V, ID=-10.0A
0
0.2
0.4
0.6
0.8
1
1.2
-50 -25 025 50 75 100 125 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs. Junction
Temperature
ID=-1mA
ID=-250μA
0
5
10
15
20
25
30
0 0.3 0.6 0.9 1.2 1.5
IS, SOURCE CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VGS=0V, TA=-55
VGS=0V, TA=25
VGS=0V, TA=85
VGS=0V, TA=125
VGS=0V, TA=150
10
100
1000
10000
100000
0 4 8 12 16 20
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
TJ(MAX)=150
TA=25
Single Pulse
DUT on 1*MRP board
VGS=-4.5V
RDS(ON) Limited
DC
PW=10s
PW=1s
PW=100ms
PW=10ms
PW=1ms PW=100μs
0
1
2
3
4
5
6
7
8
9
10
020 40 60 80 100 120 140 160
VGS (V)
Qg (nC)
Figure 11. Gate Charge
VDS=-10V, ID=-20A
DMP26M7UFG
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
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April 2015
© Diodes Incorporated
DMP26M7UFG
ADVANC E INF O R MA TI O N
ADVANC E INF O R MA TI O N
NE W PRODUCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
RθJA(t)=r(t) * RθJA
RθJA=122/W
Duty Cycle, D=t1 / t2
D=Single Pulse
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
D=0.3
D=0.5
D=0.7
D=0.9
POWERDI3333-8
Dim
Min
Max
Typ
D
3.25
3.35
3.30
E
3.25
3.35
3.30
D2
2.22
2.32
2.27
E2
1.56
1.66
1.61
A
0.75
0.85
0.80
A1
0
0.05
0.02
A3
0.203
b
0.27
0.37
0.32
b2
0.20
L
0.35
0.45
0.40
L1
0.39
e
0.65
Z
0.515
All Dimensions in mm
A
A1
A3
D
D2
E
E2
b2
(4x)
L
(4x)
L1
(3x)
b (8x)eZ (4x)
Pin 1 ID 1 4
8 5
DMP26M7UFG
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
6 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DMP26M7UFG
ADVANC E INF O R MA TI O N
ADVANC E INF O R MA TI O N
NE W PRODUCT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
Dimensions
Value (in mm)
C
0.650
G
0.230
G1
0.420
Y
3.700
Y1
2.250
Y2
1.850
Y3
0.700
X
2.370
X2
0.420
X
Y
Y1
Y3
Y2
X2 C
1 4
8 5
G
G1

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