ESD8472 Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
November, 2017 Rev. 10
1Publication Order Number:
ESD8472/D
ESD8472
ESD Protection Diode
UltraLow Capacitance
MicroPackaged Diodes for ESD Protection
The ESD8472 is designed to protect voltage sensitive components
that require ultra-low capacitance from ESD and transient voltage
events. Excellent clamping capability, low capacitance, high
breakdown voltage, high linearity, low leakage, and fast response time
make these parts ideal for ESD protection on designs where board
space is at a premium. It has industry leading capacitance linearity
over voltage making it ideal for RF applications. This capacitance
linearity combined with the extremely small package and low
insertion loss makes this part well suited for use in antenna line
applications for wireless handsets and terminals.
Features
Industry Leading Capacitance Linearity Over Voltage
UltraLow Capacitance: 0.2 pF
Insertion Loss: 0.030 dBm
0201DNS Package: 0.60 mm x 0.30 mm
Standoff Voltage: 5.3 V
Low Leakage: < 1 nA
Low Dynamic Resistance: < 1 W
1000 ESD IEC6100042 Strikes ±8 kV Contact / Air Discharged
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free and are RoHS Compliant
Typical Applications
RF Signal ESD Protection
RF Switching, PA, and Antenna ESD Protection
Near Field Communications
USB 2.0, USB 3.0
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
IEC 6100042 Level 4 (Contact) (Note 1)
IEC 6100042 Level 4 (Air) (Note 1)
ESD ±20
±20
kV
Maximum Peak Pulse Current
IEC 6100045 8/20 ms (Lightning) (Note 2)
IPP 3.0 A
Total Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, JunctiontoAmbient
°PD°
RqJA
300
400
mW
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to
+150
°C
Lead Solder Temperature Maximum
(10 Second Duration)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse at TA = 25°C, per IEC6100042 waveform.
2. Nonrepetitive current pulse at TA = 25°C, per IEC6100045 waveform.
3. Mounted with recommended minimum pad size, DC board FR4
Device Package Shipping
ORDERING INFORMATION
www.onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ESD8472MUT5G X3DFN2
(PbFree)
10000 / Tape &
Reel
MARKING
DIAGRAM
X3DFN2
CASE 152AF
PIN 1
4 = Specific Device Code
M = Date Code
4 M
SZESD8472MUT5G X3DFN2
(PbFree)
15000 / Tape &
Reel
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ESD8472
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2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
BiDirectional
IPP
IPP
V
I
IR
IT
IT
IR
VRWM
VCVBR
VRWM VC
VBR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Reverse Working Voltage VRWM 5.3 V
Breakdown Voltage VBR IT = 1 mA (Note 4) 7.0 12 V
Reverse Leakage Current IRVRWM = 5.3 V < 1 50 nA
Clamping Voltage VCIPP = 1 A (Note 5) 11 15 V
Clamping Voltage VCIPP = 3 A (Note 5) 14 20 V
ESD Clamping Voltage VCPer IEC6100042See Figures 1 and 2
Junction Capacitance CJVR = 0 V, f = 1 MHz
VR = 0 V, f = 1 GHz
0.20
0.15
0.30
0.30
pF
Dynamic Resistance RDYN TLP Pulse 1W
Insertion Loss f = 1 MHz
f = 8.5 GHz
0.050
0.250
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
5. Nonrepetitive current pulse at 25°C, per IEC6100045 waveform (Figure 9).
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC6100042
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC6100042
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ESD8472
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. IV Characteristics Figure 4. CV Characteristics
Figure 5. RF Insertion Loss Figure 6. Capacitance over Frequency
Figure 7. Positive TLP IV Curve Figure 8. Negative TLP IV Curve
VOLTAGE (V) VOLTAGE (V)
0 5 10 15 20 25 30
0
2
4
6
8
10
12
14
16
18
20
CURRENT (A)
30 25 20 15 10 50
20
18
16
14
12
10
8
6
4
2
0
CURRENT (A)
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ESD8472
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4
Figure 9. IEC 6100045 8/20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
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ESD8472
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5
PACKAGE DIMENSIONS
X3DFN2, 0.62x0.32, 0.355P, (0201)
CASE 152AF
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A B
E
D
BOTTOM VIEW
b
e
2X
L22X
TOP VIEW
2X
A
A1
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
DIM MIN MAX
MILLIMETERS
A0.25 0.33
A1 −−− 0.05
b0.22 0.28
e0.355 BSC
L2 0.17 0.23
MOUNTING FOOTPRINT*
DIMENSIONS: MILLIMETERS
0.74
1
0.30
0.31
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
2
1
See Application Note AND8398/D for more mounting details
A
M
0.05 BC
A
M
0.05 BC
2X
2X
RECOMMENDED
PIN 1
INDICATOR
(OPTIONAL)
D0.58 0.66
E0.28 0.36
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
ESD8472/D
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